AMPLIFIERS - LOW NOISE - CHIP
2
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC263 chip is a GaAs MMIC Low Noise
Amplier (LNA) which covers the frequency range of
24 to 36 GHz. The chip can easily be integrated into
Multi-Chip Modules (MCMs) due to its small (3.29
mm2) size. The chip utilizes a GaAs PHEMT process
offering 22 dB gain from a single bias supply of + 3V
@ 58 mA with a noise gure of 2.0 dB. All data is with
the chip in a 50 ohm test xture connected via 0.076
mm (3 mil) diameter ribbon bonds of minimal length
0.31 mm (<12 mils). The HMC263 may be used in
conjunction with HMC264 or HMC265 mixers to real-
ize a millimeterwave system receiver.
Excellent Noise Figure: 2 dB
Gain: 22 dB
Single Supply: +3V @ 58 mA
Small Size: 2.48 x 1.33 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd = +3V
Typical Applications
The HMC263 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT
• SATCOM
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 24 - 27 27 - 32 32 - 36 GHz
Gain 20 23 26 18 22 26 17 20 23 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/°C
Noise Figure 2.5 3.3 2.0 2.5 2.1 2.6 dB
Input Return Loss 710 710 710 dB
Output Return Loss 710 912 811 dB
Output Power for 1 dB Compression (P1dB) -1 3 1 5 4 8 dBm
Saturated Output Power (Psat) 1 5 3 7 6 10 dBm
Output Third Order Intercept (IP3) 5 10 713 11 17 dBm
Supply Current (Idd) (@ Vdd = +3.0V) 58 77 58 77 58 77 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
3
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Noise Figure
vs. Temperature @ Vdd = +3V
Return Loss @ Vdd = +3V Return Loss @ Vdd = +5V
Gain vs. Temperature @ Vdd = +3V Gain vs. Temperature @ Vdd = +5V
Noise Figure
vs. Temperature @ Vdd = +5V
10
15
20
25
30
20 25 30 35 40
+25C
-55C
+85C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
20 25 30 35 40
+25C
-55C
+85C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
20 25 30 35 40
+25C
-55C
+85C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
10
15
20
25
30
20 25 30 35 40
+25C
-55C
+85C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
4
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Output IP3 @ Vdd = +3V Output IP3 @ Vdd = +5V
Isolation
Gain & Noise Figure
vs. Supply Voltage @ 30 GHz
Output P1dB @ Vdd = +3V Output P1dB @ Vdd = +5V
-6
-4
-2
0
2
4
6
8
10
12
14
20 25 30 35 40
+25C
-55C
+85C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
20 25 30 35 40
+25C
-55C
+85C
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
20 25 30 35 40
+25C
-55C
+85C
IP3 (dBm)
FREQUENCY (GHz)
-4
-2
0
2
4
6
8
10
12
14
20 25 30 35 40
+25C
-55C
+85C
P1dB (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
20 25 30 35 40
3V
5V
ISOLATION (dB)
FREQUENCY (GHz)
19
19.5
20
20.5
21
21.5
22
1.75
2
2.25
2.5
2.75
3
3.25
2.5 3 3.5 4 4.5 5 5.5
GAIN (dB)
NF (dB)
Vdd SUPPLY VOLTAGE (Vdc)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
5
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
100 1K 10K 100K 1M
PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 30 GHz,
RF Input Power = -12 dBm (P1dB)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
AMPLIFIERS - LOW NOISE - CHIP
5 6
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +3 Vdc) -5 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 7.69 mW/°C above 85 °C) 0.692 W
Thermal Resistance
(channel to die bottom) 130 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Analog
Devices Inc.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
7
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled and matched to 50 Ohm.
2, 3 Vdd1, Vdd2
Power supply for the 4-stage amplier. An external RF bypass
capacitor of 100 - 300 pF is required. The bond length to the
capacitor should be as short as possible. The ground side of the
capacitor should be connected to the housing ground.
4RFOUT This pad is AC coupled and matched to 50 Ohm.
Pad Description
Assembly Diagrams
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
8
HMC263
v05.1017
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100pF single
layer capacitor (mounted eutectically or by conductive epoxy) placed no
further than 0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a
tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports) 0.076mm
x 0.013mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and
terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
