Device Name : IGBT-Module
Type Name
: 1MBI800UG-330
Spec. No. : MS5F07548
H04-004-007
express written consent of Fuji Electric Systems Co.,Ltd.
This
material
and
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herein
is
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of
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Co.,Ltd.
They
shall
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lent,
or
disclosed
in
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whatsoever
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purposes
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the
Specification
(800A/3300V-1in1 IGBT-Module)
APPROVALNAME
141
MS5F07548
DRAWN
CHECKED H.Kakiki
Fuji Electric Systems Co.,Ltd.
DWG.No.
O.Ikawa
T.Koga
K.Ohshika
CHECKED 04-Jun-'10
02-Jun-'10
DATE
31-May-'10
H04-004-006
Revised Records
Issued
data
Applied
date
Ind. Content
--
Fuji Electric Systems Co.,Ltd.
DWG.No.
142
MS5F07548
Drawn Checked
-H.Kakiki
Checked Approved
K.Ohshika O.Ikawa
- -
- -
- -
- -
- -
- -
- -
- -
- - - -
- - - -
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
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lent,
or
disclosed
in
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way
whatsoever
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express written consent of Fuji Electric Systems Co.,Ltd.
Date Classifi -
cation
02-Jun-'10 enactment
- -
- -
- -
- -
- -
- -
- -
- -
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
H04-004-003
Type Name : 1MBI800UG-330 ／ PKG.No. M151
143
MS5F07548
DWG.No.
Fuji Electric Systems Co.,Ltd.
This
material
and
the
information
herein
is
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property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
reproduced,
copied,
lent,
or
disclosed
in
any
way
whatsoever
for
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use
of
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used
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purposes
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main emitter
main collector
gate
sense collector
sense emitter
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ）
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
AC, Q≦10pC
(acc. To IEC 1287)
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Main Terminals 8~10 Nm (M8)
Sense Terminals 1.7~2.5 Nm (M4)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
H04-004-003
Input capacitance
Forward on voltage
μs
Sense Terminals
2.5
VCE=10V,VGE=0V,f=1MHz
- 3.40 -
Mounting
Main Terminals
Gate-Emitter
threshold voltage
VGE = 0V
VCE = 3300V
IGES
ICES
Screw Torque *2
- mΩR lead -
Reverse recovery
Turn-on
0.188
Rg = 2.4 Ω
Lead resistance, terminal-chip
Turn-off
ton
toff
0.40
Collector-Emitter
saturation voltage
Zero gate voltage
Collector current
Gate-Emitter
leakage current
3.10
VGE=0V 3.25
2.58 2.81
Tj= 25°C -
VCE(sat)
(main terminal)
-
-
Vcc = 1800V
Ic = 800A
VGE=±15V, Tj=125℃
-
Cies
Tj=125°C
VF
(main terminal)
-
-
tf
trr -
VF
(chip)
Tj= 25°C -
Tj=125°C
IF = 800A
3300
Ic
Icp
1330
800
2660
1600
Continuous
V
±20 V
Items Symbols Conditions
VCESCollector-Emitter voltage
VGES
1ms
6.0 kVAC
N m
AC : 1min.
-Ic pulse
Pc
Tj
A
°C
kW1 device
150
-Ic 800
Gate-Emitter voltage
Collector current
Junction temperature
Collector Power Dissipation
1600
9.6
1ms
Units
max.typ.min. Characteristics
5.75
10
Tstg
Conditions
Storage temperature
Isolation
voltage Viso
Items Symbols
between terminal and copper base *1
-40 ~ +125
Ic = 800mA
3200
VCE = 20V
VGE=±20V
VCE = 0V - -
-
6.0
1.0 mA
V
3.45
7.5 V
nA
6.75
Units
- 2.28 2.51
Maximum
Ratings
- 2.43 2.66
- 3.15
3.00 3.30
Fuji Electric Systems Co.,Ltd.
DWG.No.
- 2.40
2.73
2.95
144
MS5F07548
2.96
V
2.80
μsIF = 800A 0.85 -
- 160 - nF
-
-
VCE(sat)
(chip)
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
VGE(th)
VGE=15V
Ic = 800A
tr - 2.30 -
express written consent of Fuji Electric Systems Co.,Ltd.
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
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copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
Partial discharge extinction voltage Ve 2.6 kVAC
5. Thermal resistance characteristics
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
7.Applicable category
This specification is applied to IGBT Module named 1MBI800UG-330 .
8.Storage and transportation notes
・The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・Avoid exposure to corrosive gases and dust.
・Avoid excessive external force on the module.
・Store modules with unprocessed terminals.
・Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
H04-004-003
lent,
or
disclosed
in
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for
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used
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manufacturing
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express written consent of Fuji Electric Systems Co.,Ltd.
Fuji Electric Systems Co.,Ltd.
DWG.No.
145
MS5F07548
Items Symbols Conditions Characteristics Units
min. typ. max.
-
- 6.0
IGBT
FWD
Contact Thermal resistance(1device)
Rth(j-c)
Rth(c-f) with Thermal Compound (*)
This
material
and
the
information
herein
is
the
property
of
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Electric
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They
shall
be
neither
reproduced,
copied,
°C/kW
- 13.0
- - 25.0
-
Thermal resistance(1device)
L
Vcc
Ic
VCE
RG
VGE
VGE
VCE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
VCE
〜〜
〜〜
〜〜
o n
tr
t
r(i )
t
of f
t
f
t
r r
I
r r
t
Typ.Name
１ＭＢＩ８００ＵＧ−３３０
LotNo.forFuji
Placeofmanufucturing Display(16DIGITS)
８００Ａ ３３００Ｖ
Rating
H04-004-003
146
MS5F07548Fuji Electric Systems Co.,Ltd.
third
party
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manufacturing
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without
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DWG.No.
11.Reliability test results
This
material
and
the
information
herein
is
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property
of
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Systems
Co.,Ltd.
They
shall
be
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copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
Reliability Test Items
Test
cate-
gories Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of sample
Accept-
ance
number
1 Terminal Strength Pull force : 40N Test Method 401 5 ( 0 : 1 )
(Pull test) Test time :
10±1 sec.
Method
Ⅰ
2 Mounting Strength Screw torque :
1.8 ~ 2.1 N·m (M4)
Test Method 402 5 ( 0 : 1 )
4.25 ~ 5.75 N·m (M6)
Method
Ⅱ
8.0~ 10.0 N·m (M8)
Test time :
10±1 sec.
3 Vibration Range of frequency : 10 ~ 500Hz Test Method 403 5 ( 0 : 1 )
Sweeping time : 15 min. Reference 1
Acceleration :
100m/s
2Condition code B
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration :
1000m/s
2Test Method 404 5 ( 0 : 1 )
Pulse width : 6.0msec. Condition code A
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. :
125±5 ℃
Test Method 201 5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. :
-40±5 ℃
Test Method 202 5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. :
85±2 ℃
Test Method 103 5 ( 0 : 1 )
Humidity Relative humidity :
85±5%
Test code C
Storage Test duration : 1000hr.
4 Unsaturated Test temp. : 120
±
2
℃
Test Method 103 5 ( 0 : 1 )
Pressurized Vapor Test humidity :
85±5%
Test code E
Test duration : 96hr.
5 Temperature Test Method 105 5 ( 0 : 1 )
Cycle Test temp. : Low temp. -40
±
5
℃
High temp. 125
±
5
℃
RT 5 ~ 35
℃
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles : 100 cycles
6 Thermal Shock +0 Test Method 307 5 ( 0 : 1 )
Test temp. : High temp. 100
-5
℃
Method
Ⅰ
+5 Condition code A
Low temp. 0
-0
℃
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles
Mechanical Tests
Environment Tests
1.7〜2.5
H04-004-003
Fuji Electric Systems Co.,Ltd.
DWG.No.
express written consent of Fuji Electric Systems Co.,Ltd.
147
MS5F07548
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
reproduced,
copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
Reliability Test Items
Test
cate-
gories Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of sample
Accept-
ance
number
1 High temperature Test Method 101 5 ( 0 : 1 )
Reverse Bias Test temp. : Ta = 125
±
5
℃
(Tj
≦
150
℃
)
Bias Voltage :
VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
2 High temperature Test Method 101 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125
±
5
℃
(Tj
≦
150
℃
)
Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E
VCE = 0V
Test duration : 1000hr.
3 Temperature Test Method 102 5 ( 0 : 1 )
Humidity Bias Test temp. : 85
±
2 oCCondition code C
Relative humidity : 85
±
5%
Bias Voltage :
VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
4 Intermitted ON time : 2 sec. Test Method 106 5 ( 0 : 1 )
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. :
Tj=100±5 deg
( for IGBT ) Tj
≦
150
℃, Ta=25±5 ℃
Number of cycles : 15000 cycles
Endurance TestsEndurance Tests
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES -
USL×2
mA
characteristic
±IGES
-
USL×2
A
Gate threshold voltage VGE(th)
LSL×0.8 USL×1.2
mA
Saturation voltage VCE(sat) -
USL×1.2
V
Forward voltage VF -
USL×1.2
V
Thermal IGBT VGE -
USL×1.2
mV
resistance or VCE
FWD VF -
USL×1.2
mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
10
H04-004-003
Fuji Electric Systems Co.,Ltd.
DWG.No.
express written consent of Fuji Electric Systems Co.,Ltd.
Low Temperature Storage Test Method 202
4Unsaturated Test Method 103
3
148
MS5F07548
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
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copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
Reliability Test Items
Test
cate-
gories Test items Reference norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of test
sample
Number
of
failure
sample
Mechanical Tests
1Terminal Strength Test Method 401
2 Mounting Strength Test Method 402
4 Shock Test Method 404
5 0
(Pull test) Method Ⅰ
5 0
Method Ⅱ
3 Vibration Test Method 403 5 0
Condition code B
5 0
Condition code B
Environment Tests
1 High Temperature Storage Test Method 201 5 0
2
Pressurized Vapor Test code E
5 0
0
Temperature Humidity Test Method 103 5
Storage Test code C
5
5 0
0
0method Ⅰ
Condition code A
5 Temperature Cycle
6 Thermal Shock Test Method 307 5
Test Method 105
Endurance Tests
1High temperature Test Method 101
3 Temperature Humidity Bias Test Method 102
5 0
Reverse Bias
2High temperature Bias Test Method 101 5 0
( for gate )
5 0
Condition code C
4Intermitted Operating Life Test Method 106 5 0
( Power cycling )
( for IGBT )
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
H04-004-003
express written consent of Fuji Electric Systems Co.,Ltd.
Vcc=1800V, Tj= 25oC
MS5F07548 9
VGE=0V, f= 1MHz, Tj= 25oC
14
VGE=15V / chip Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip Tj= 125oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
This
material
and
the
information
herein
is
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property
of
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They
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lent,
or
disclosed
in
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use
of
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used
for
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Fuji Electric Systems Co.,Ltd.
DWG.No.
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
0
200
400
600
800
1000
1200
1400
1600
0 1 2 3 4 5
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
Tj=125
o
C
Tj=25
o
C
0
200
400
600
800
1000
1200
1400
1600
0 1 2 3 4 5
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
1.0
10.0
100.0
1000.0
0 5 10 15 20 25 30
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
C
oes
Cres
0
500
1000
1500
2000
0 2 4 6 8 10
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ μC ]
0
VGE
V
CE
Gate-Emitter voltage : VGE [V]
0
200
400
600
800
1000
1200
1400
1600
0 1 2 3 4 5
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
2
4
6
8
10
5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=1600A
Ic=800A
Ic= 400A
H04-004-003
express written consent of Fuji Electric Systems Co.,Ltd.
10 14
Fuji Electric Systems Co.,Ltd.
DWG.No.
MS5F07548
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
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copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
Vcc=1800V, Ic=800A, VGE=±15V, Tj=125oC±VGE=15V, Tj=125oC / chip
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=1800V, Ic=800A, VGE=±15V, Tj= 125oCVcc=1800V, VGE=±15V, Rg=2.4Ω
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=1800V, VGE=±15V, Rg=2.4Ω, Tj= 25oC Vcc=1800V, VGE=±15V, Rg=2.4Ω, Tj=125oC
100
1000
10000
0 200 400 600 800 1000 1200 1400
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
toff
ton
tf
tr
100
1000
10000
0 200 400 600 800 1000 1200 1400
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
tr
toff
ton
tf
100
1000
10000
0 2 4 6 8 10 12 14 16
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400
Switching loss : Eon, Eoff [ mJ/pulse ]
Collector current : Ic [ A ]
Eon
Tj=125℃
Tj=25℃
Eoｆｆ
Eoｆｆ
Eon
0
1000
2000
3000
4000
5000
6000
0 2 4 6 8 10 12 14 16
Switching loss : Eon, Eoff [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eon
Eoff
0
500
1000
1500
2000
0 500 1000 1500 2000 2500 3000 3500
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
H04-004-003
express written consent of Fuji Electric Systems Co.,Ltd.
Fuji Electric Systems Co.,Ltd.
DWG.No.
MS5F07548
Transient thermal resistance (max.)
FWD safe operating area (max.)
Tj=125oC
11 14
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
reproduced,
copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
Reverse recovery characteristics (typ.)
Switching loss vs. Collector current (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=1800V, IF=800A, VGE=±15V, Tj=125oCVcc=1800V, VGE=±15V, Rg=2.4Ω
Forward current vs. Forward on voltage (typ.)
chip Vcc=1800V, VGE=±15V, Rg=2.4Ω
0
200
400
600
800
1000
1200
1400
1600
0 1 2 3 4
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=125
o
C
Tj=25
o
C
100
1000
10000
0 200 400 600 800 1000 1200 1400
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Irr
trr
0.1
1.0
10.0
100.0
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [ °C/kW ]
Pulse width : Pw [ sec ]
FWD
IGBT
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000 1200 1400
Switching loss : Err [ mJ/pulse ]
Forward current : IF [ A ]
Tj=125
o
C
Tj=25
o
C
0
200
400
600
800
1000
1200
1400
0 2 4 6 8 10 12 14 16
Switching loss : Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
0
500
1000
1500
2000
0 1000 2000 3000 4000
IR [ A ]
Collector - Emitter voltage : VCE [ V ]
•
and sense collector .
最大定格を超えて使用すると、素子が破壊する場合があります。
•
•
•If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen
sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証は
できません。
•Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is
classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and
down of case temperature (Tc), and depends on cooling design of equipment which use this product. In
application which has such frequent rise and down of Tc, well consideration of product life time is necessary.
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量には
このΔTj による場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、
本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分
留意してご使用下さい。
•Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause
poor contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合
•
H04-004-003
やゆがみ等があると、本製品と冷却フィンの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の
信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
冷却フィンはネジ取り付け位置間で平坦度を100mmで50um以下、表面の粗さは10um以下にして下さい。過大
な凸反りがあったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反り
を必ず付けて火災，爆発，延焼等の２次破壊を防いでください。
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability
life.
Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the
equipment from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカー
Warnings
This product shall be used within its maximum rating (voltage, current, and temperature). This product
may be broken in case of using beyond the maximum ratings at measuring between sense emitter
製品の最大定格（電圧，電流，温度等）の範囲内で御使用下さい。補助エミッタ端子と補助コレクタ端子間の測定で、
Fuji Electric Systems Co.,Ltd.
DWG.No.
express written consent of Fuji Electric Systems Co.,Ltd.
があります。
Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and
the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large
convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other
hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal
conductivity will be worse and over heat destruction may occur.
1412
MS5F07548
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
reproduced,
copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
•
•
•
•
•
•
•
H04-004-003
の範囲内でご使用下さい。
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず最大定格
Warnings
( 実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
と素子が破壊する可能性があります。
して下さい。
あります。
十分な値で設定して下さい。 （ 推奨値 : -VGE = -15V )
ドライブ条件(+VGE, -VGE, RG, CGE）でご使用下さい。
ターンオン dv/dt が高いと対向アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適な
C-E terminals. Use this product within its maximum voltage.
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは
In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product
in the most suitable drive conditions, such as +VGE, -VGE, RG, CGE to prevent the malfunction.
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用する
This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足
In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
Fuji Electric Systems Co.,Ltd.
DWG.No.
1413
MS5F07548
したり、塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる
express written consent of Fuji Electric Systems Co.,Ltd.
If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施
Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性が
In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
reproduced,
copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
•
•
•
H04-004-003
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Systems Co., Ltd.
rights, nor license the enforcement rights.
本仕様書に記載してある応用例は、富士電機システムズ製品を使用した代表的な応用例を説明するもの
であり、本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありま
せん。
結果として人身事故・火災等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・
誤動作防止設計など安全確保のための手段を講じて下さい。
The application examples described in this specification only explain typical ones that used the Fuji Electric
Systems products. This specification never ensure to enforce the industrial property and other
malfunction of the Fuji Electric Systems semiconductor products, take some measures to keep
safety such as redundant design, spread-fire-preventive design, and malfunction-protective design.
富士電機システムズは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障
が発生したり、誤動作する場合があります。富士電機システムズ製半導体製品の故障または誤動作が、
Cautions
Fuji Electric Systems is constantly making every endeavor to improve the product quality and
reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents
causing injury or death, damage to property like by fire, and other social damage resulted from a failure or
Fuji Electric Systems Co.,Ltd.
DWG.No.
express written consent of Fuji Electric Systems Co.,Ltd.
The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical
devices, atomic control systems and submarine relaying equipment or systems, please apply after
confirmation of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
1414
MS5F07548
This
material
and
the
information
herein
is
the
property
of
Fuji
Electric
Systems
Co.,Ltd.
They
shall
be
neither
reproduced,
copied,
lent,
or
disclosed
in
any
way
whatsoever
for
the
use
of
any
third
party
nor
used
for
the
manufacturing
purposes
without
the
