Features
The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
Intended for use in thyrisitors phase control ,
circuits for lamp dimming, universal motor speed control ,and
heat control.
Electrical Characteristics @ 25oC Unless Otherwise Specified
DB3TG
SILICON
BIDIRECTIONAL
DIAC
Power dissipation
on Printed
Circuit(l=10mm)
PC150mW
TA=65oC
Repetitive Peak
on-state Current ITRM 2.0A
tp=10us,f=120Hz
Breakover Voltage
VBO
Min Typ Max
30 32 34V C=22nF(Note 3)
Breakover
Current(Note 2) IBO(max) 15uA C=22nF
Rise Time(Note 2) Tr2us(max)
Leaka
e
Current(Note 2) IB(max) 10uA VB=0.5VBO(max)
DO-35G
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .150 --- 3.8
B --- .079 --- 2.00
C --- .020 --- .52
D 1.083 --- 27.50 ---
B
D
DIMENSIONS
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: C 2012/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
• Moisture Sensitivity: Level 1 per J-STD-020C
2. Electrical characteristics applicable in both forward and
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
reverse directions.
3. Connected in parallel with the devices.
Dynamic breakover
voltage (Note2) VBO and VFat
10mA
∆V9V(Min)
Breakover Voltage
Symmetry |+VBO |
-|-VBO|±2V C=22nF(Note 3)
Volta
e
Note 2
Out
ut Vo(min) 5V
Storage Temperature: -40oC to +125oC
Thermal Resistance Junction to Lead:167 C/W
Thermal Resistance Junction to Ambient: 400 C/W
Maximum Ratings
o
o
Operating Temperature: -40oC to +125oC