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DATA SH EET

Product data sheet

Supersedes data of 1997 Jun 20

1999 Apr 12

DISCRETE SEMICONDUCTORS

BC849W; BC850W

NPN general purpose transistors

ook, halfpage

M3D102

1999 Apr 12 2

NXP Semiconductors Product data sheet

NPN general purpose transistors BC849W; BC850W

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 45 V).

APPLICATIONS

•Low noise stages in tape recorders, hi-fi amplifiers and

other audio- frequency equip men t.

DESCRIPTION

NPN transistor in a SOT323 plastic package.

PNP complements: BC859W and BC860W.

MARKING

Note

1. ∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

PINNING

TYPE

NUMBER MARKING

CODE(1) TYPE

NUMBER MARKING

CODE(1)

BC849BW 2B∗BC850BW 2F∗

BC849CW 2C∗BC850CW 2G∗

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT323) and sym bol.

handbook, halfpage

MAM062

Top view

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BC849W −30 V

BC850W −50 V

VCEO collector-emitter voltage open base

BC849W −30 V

BC850W −45 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 12 3

NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BC849W; BC850W

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 30 V −−15 nA

IE = 0; VCB = 30 V; Tj = 150 °C−−5μA

IEBO emitter cut-off current IC = 0; VEB = 5 V −−100 nA

hFE DC current gain IC = 2 mA; VCE = 5 V; see Figs 2 and 3

BC849BW; BC850BW 200 −450

BC849CW; BC850CW 420 −800

VCEsat collector-emitter saturation

voltage IC = 10 mA; IB = 0.5 mA −−250 mV

IC = 100 mA; IB = 5 mA; note 1 −−600 mV

VBE base-emitter vo ltage IC = 2 mA; VCE = 5 V 580 −700 mV

IC = 10 mA; VCE = 5 V −−770 mV

Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −−3pF

Ceemitter cap a citance IC = ic = 0; VEB = 500 mV; f = 1 MHz −11 −pF

fTtransition freque ncy IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz

Fnoise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 10 Hz to 15.7 kHz −−4dB

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz −−4dB

1999 Apr 12 4

NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BC849W; BC850W

Fig.2 DC current gain; typical values.

handbook, full pagewidth

300

100

200

MBH724

−2

−1

hFE

1IC (mA)

10 10

VCE = 5 V

BC849BW; BC850BW.

Fig.3 DC current gain; typical values.

handbook, full pagewidth

600

200

400

MBH725

−2

−1

hFE

1IC (mA)

10 10

VCE = 5 V

BC849CW; BC850CW.

1999 Apr 12 5

NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BC849W; BC850W

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

1999 Apr 12 6

NXP Semiconductors Product data sheet

NPN general purpose transistors BC849W; BC850W

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

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The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 115002 /00/03/pp7 Date of releas e: 1999 Apr 12 Document orde r number: 9397 750 05587