51612GB TKIM TC-00002756 No. A0944-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
2SK596S
N-Channel JFET
20V, 140 to 350μA, 1.0mS, SPA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
•
Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve)
•
Especiallysuited for use in condenser microphone for audio equipments and telephones
•
Excellent transient characteristic
•
Adoption of FBET process
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage VGDO --20 V
Gate Current IG10 mA
Drain Current ID1mA
Allowable Power Dissipation PD100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7524-005
Ordering number : ENA0944
Product & Package Information
• Package : SPA
• JEITA, JEDEC : SC-72
• Minimum Packing Quantity : 500 pcs./bag
Marking Electrical Connection
123
4.0
3.8
3.0
2.2
0.7
0.7
0.6
0.4
0.4 0.4
0.5
3.0
1.8
15.0
1.3
1.3
1 : Source
2 : Gate
3 : Drain
SPA
596S
LOT No.
Rank
3
2
1
2SK596S-A
2SK596S-B
2SK596S
No. A0944-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Rank min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100μA --20 V
Cutoff Voltage VGS(off) VDS=5V, ID=1μA --0.4 --1.5 V
Drain Current IDSS*V
DS=5V, VGS=0V
A
100 170 μA
B
150 240
Forward Transfer Admittance | yfs |VDS=5V, VGS=0V, f=1kHz 0.4 0.8 mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 4.1 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 0.88 pF
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specifi ed Test Circuit.]
Voltage Gain GVVIN=10mV, f=1kHz A --5.0 dB
B --3.8
Reduced Voltage Characteristic ΔGVV
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V
A --0.84 --1.8 dB
B --0.90 --2.0
Frequency Characteristic ΔGvf f=1kHz
→
110Hz --1.0 dB
Total Harmonic Distortion THD VIN=30mV, f=1kHz A 2.0 %
B 1.6
Output Noise Voltage VNO VIN=0V, A curve --110 dB
* : The 2SK596S is classifi ed by IDSS as follows : (unit : μA)
Rank A B
IDSS 100 to 170 150 to 240
Test Circuit
Ordering Information
Device Package Shipping memo
2SK596S-A SPA 500pcs./bag Pb Free
2SK596S-B SPA 500pcs./bag
OSC
15pF +
33μF
1kΩVCC=4.5V
VCC=1.5V
V
VTVM
THD
Voltage Gain
Frequency Characteristic
Harmonic Distortion
Reduced Voltage Characteristic
2SK596S
No. A0944-3/7
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- μA
IT16806 IT16807
80 100 120 140 160 180 200 220 240 260
0.6
1.0
0.95
0.75
0.8
0.9
0.85
0.7
0.65
Drain Current, IDSS -- μAIT16808
Cutoff Voltage, VGS(off) -- V
VGS(off) -- IDSS
80 100 120 140 160 180 200 220 240 260
0.45
0.25
0.3
0.35
0.4
0.5
0.55
0.6
0.2
--0.6
0
300
250
200
150
0
--0.1--0.5 --0.2--0.3--0.4
100
50
80
--5.5
--7.0
--3.5
--4.0
--2.0
--4.5
--5.0
--6.0
--6.5
--2.5
--3.0
260180120 140 160 200 220 240100 Drain Current, IDSS -- μA
GV -- IDSS
IT16809
Drain Current, IDSS -- μA
Forward T ransfer Admittance, | yfs | -- mS
| yfs | -- IDSS
VDS=5V
VGS=0V
f=1kHz
VDS=5V
Ta=75°
C
25
°
C
--25
°C
VDS=5V
ID=1μA
GV : VCC=4.5V
V
IN=10mV
Cin=15pF
R
L=1kΩ
f=1kHz
IDSS : VDS=5.0V
Voltage Gain, GV -- dB
Ciss -- VDS
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
ITR01788
1.0 10 3322757
1.0
2
7
10
5
3
2
VGS=0V
f=1MHz
Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
ITR01789
723572
10
1.0 3
0.1
1.0
5
3
2
7
5
3
2
VGS=0V
f=1MHz
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- μA
IT16804 Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- μA
IT16805
0
0
200
180
160
140
120
100
80
108264
60
40
20
--0.5
0
300
250
200
150
0
--0.1--0.4 --0.2--0.3
100
50
VDS=5V
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
IDSS=240
μ
A
170μA
100μA
2SK596S
No. A0944-4/7
Input Voltage, VIN -- mV
THD -- VIN
Total Harmonic Distortion, THD -- %
IT16812 IT16813
0 20 40 60 80 100 120 140 160
0
120
100
40
80
60
20
0 24020040 12080 160 Ambient Temperature, T a -- °C
Allowable Power Dissipation, PD -- mW
PD -- Ta
THD : VCC=4.5V
Cin=15pF
RL=1kΩ
f=1kHz
IDSS : VDS=5.0V
2
7
1.0
0.1
5
3
2
7
10
5
3
2
7
100
5
3
IDSS=100μA
170
μ
A
240
μ
A
Drain Current, IDSS -- μA
ΔGVV -- IDSS
Reduced Voltage Characteristic, ΔGVV -- dB
IT16810 Drain Current, IDSS -- μA
THD -- IDSS
Total Harmonic Distortion, THD -- %
IT16811
80
--1.1
--0.7
--0.75
--0.8
--0.85
--0.9
--0.95
260240120 200100 180140 160 220
--1.0
--1.05
80
1.0
3.0
2.6
2.8
2.4
2.2
2.0
260240220120 180100 160140 200
1.8
1.6
1.4
1.2
ΔGVV :VCC=4.5V→1.5V
V
IN=10mV
Cin=15pF
R
L=1kΩ
f=1kHz
IDSS : VDS=5.0V
THD : VCC=4.5V
V
IN=30mV
Cin=15pF
RL=1kΩ
f=1kHz
IDSS : VDS=5.0V
2SK596S
No. A0944-5/7
Bag Packing Specifi cation
2SK596S-A, 2SK596S-B
2SK596S
No. A0944-6/7
Outline Drawing
2SK596S-A, 2SK596S-B
Mass (g) Unit
0.13
* For reference
mm
2SK596S
PS No. A0944-7/7
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