GF1A-GF1M
GF1A-GF1M, Rev. G2001 Fairchild Semiconductor Corporation
GF1A - GF1M
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
Symbol
Parameter
Device
Units
1A 1B 1D 1G 1J 1K 1M
VF Forward Voltage @ 1.0 A 1.0 1.2 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, Irr = 0.25 A 2.0 µs
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C 5.0
50 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 15 pF
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
Symbol
Parameter
Value
Units
1A 1B 1D 1G 1J 1K 1M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward Current,
@ TL = 125°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature -65 to +175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 1.8 W
RθJA Th ermal Resistance, Junction to Ambient* 80 °C/W
RθJL Thermal Resistance, Junction to Lead* 26 °C/W
Thermal Characteristics
*Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
GF1A-GF1M
GF1A-GF1M, Rev. G2001 Fairchild Semiconductor Corporation
General Purpose Rectifiers (Glass Passivated)
(continued)
Typical Characteristics
0 20406080100120140
0.001
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 125 C
º
A
T = 25 C
º
A
T = 75 C
º
A
0.01 0.1 1 10 100
1
2
5
10
20
50
100
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.01
0.1
1
10
100
Forward Voltage, VF [V]
Forward Current, IF [A]
T = 25 C
º
A
Pulse Widt h = 300µ
µµ
µS
2% Duty Cycle
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Lead Temperature [ºC]
Average Rectified Forward Current, IF [A]
RESISTIVE OR
INDUCTIVE LOAD
P. C.B. MO UNTE D
O N 0.2 x 0 .2 "
(5.0 x 5.0 m m)
CO PP ER PAD AREAS
1 2 5 10 20 50 100
1
2
5
10
20
50
100
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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