Single Phase Rectifier Bridge PSB 35 IdAVM= 35 A VRRM= 800-1800 V Preliminary Data Sheet VRSM (V) 800 1200 1400 1600 1800 VRRM (V) 800 1200 1400 1600 1800 Type + PSB 35/08 PSB 35/12 PSB 35/14 PSB 35/16 PSB 35/18 ~ ~ - Symbol Test Conditions IdAVM IFSM TC = 85 C, (per module) TVJ = 45 C i dt 2 TVJ TVJM Tstg VISOL Maximum Ratings Features * * * * * * 35 A t = 10 ms (50 Hz), sine 400 A VR = 0 t = 8.3 ms (60 Hz), sine 440 A TVJ = TVJM t = 10 ms (50 Hz), sine 360 A VR = 0 t = 8.3 ms (60 Hz), sine 400 A TVJ = 45 C t = 10 ms (50 Hz), sine 800 As Applications VR = 0 t = 8.3 ms (60 Hz), sine 810 As TVJ = TVJM t = 10 ms (50 Hz), sine 650 As VR = 0 t = 8.3 ms (60 Hz), sine 670 As -40... + 150 150 -40... + 150 C C C * * * * 50/60 Hz, RMS t = 1 min 2500 V IISOL 1 mA 3000 Package with screw terminals Isolation voltage 3000 V Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Md Mounting torque (M4) 1.5 Nm * * * Weight Terminal connection torque (M4) typ. 1.5 135 Nm g Package style and outline t=1s V Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM, TVJ = 25C 0.3 mA VR = VRRM, TVJ = TVJM 5 mA IF = 150 A, VF VTO rT RthJC RthJK ds dA a TVJ = 25 C Characteristic Value 2.2 V 0.85 V 12 m per Diode; DC per module per Diode; DC per module 2.8 0.7 3.4 0.85 K/W K/W K/W K/W Creeping distance on surface Creeping distance in air Max. allowable acceleration 18.6 18.6 50 mm mm m/s For power-loss calculations only Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach, Germany Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net I F(OV) -----I FSM 60 10 A TVJ=45C 50 1.6 40 1.4 3 IFSM (A) 2 As TVJ=150C 400 360 TVJ=45C TVJ=150C 1.2 30 T=150C 1 20 0 V RRM 0.8 1/2 V RRM 10 0.6 IF 1 V RRM T=25C 0 10 VF 1 0.4 1.5 V 1 10 t[ms] 2 10 2 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration voltage drop per diode [W] 80 1 0 10 Fig. 1 Forward current versus 2 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 50 TC 55 PSB 35 0.29 0.01 0.57 60 = RTHCA [K/W] 60 1.12 [A] DC sin.1 80 80 85 30 rec.1 20 rec.60 rec.30 90 95 100 105 40 2.23 DC sin.180 rec.120 rec.60 rec.30 20 PVTOT 0 10 IFAVM 30 110 115 120 [A] 20 10 125 130 5.57 0 40 65 70 75 50 100 Tamb 135 I dAV 140 145 C 150 0 150 50 100 150 200 TC (C) [K] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 5 Z thJC K/W 4 Z thJK 3 2 1 Z th 0.01 0.1 1 10 t[s] Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach, Germany Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net