Single Phase PSB 35 IdAVM= 35 A
Rectifier Bridge VRRM= 800-1800 V
Features
•Package with screw terminals
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•UL registered E 148688
Applications
•Supplies for DC power equipment
•Input rectifier for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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Preliminary Data Sheet
POWERSEM GmbH, W alpersdorfer Str . 53
D - 91126 Schwabach, Germany
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net
Symbol Test Conditions Maximum Ratings
IdAVM TC = 85 °C, (per module) 35 A
IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 400 A
VR = 0 t = 8.3 ms (60 Hz), sine 440 A
TVJ = TVJM t = 10 ms (50 Hz), sine 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 400 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 800 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 810 A²s
TVJ = TVJM t = 10 ms (50 Hz), sine 650 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 670 A²s
TVJ -40... + 150 °C
TVJM 150 °C
Tstg -40... + 150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V∼
IISOL ≤ 1 mA t = 1 s 3000 V∼
MdMounting torque (M4) 1.5 Nm
Terminal connection torque (M4) 1.5 Nm
Weight typ. 135 g
Symbol Test Conditions Characteristic Value
IRVR = VRRM, TVJ = 25°C ≤ 0.3 mA
VR = VRRM, TVJ = TVJM ≤ 5 mA
VFIF = 150 A, TVJ = 25 °C ≤ 2.2 V
VTO For power-loss calculations only 0.85 V
rT 12 mΩ
RthJC per Diode; DC 2.8 K/W
per module 0.7 K/W
RthJK per Diode; DC 3.4 K/W
per module 0.85 K/W
dsCreeping distance on surface 18.6 mm
dACreeping distance in air 18.6 mm
aMax. allowable acceleration 50 m/s²
VRSM VRRM Type
(V) (V)
800 800 PSB 35/08
1200 1200 PSB 35/12
1400 1400 PSB 35/14
1600 1600 PSB 35/16
1800 1800 PSB 35/18
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str . 53
D - 91126 Schwabach, Germany
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net
Fig. 1 Forward current versus
voltage drop per diode Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated
11.5
0
10
20
30
40
50
60
IF
VF
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
400 360
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=1 50°C
t [ms]
1
10
10
2
3
As
2
3010
0
20
40
60
80
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
5.57
2.23
1.12
0.57
0.29 0.01 = RTHCA [K/W]
IFAVM [A] Tamb [K]
050100150
[W]
PVTOT
PSB 35
50 100 150 200
0
10
20
30
40 DC
sin.1 80°
rec.1 20°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 110
1
2
3
4
5
K/W
Zth
t[s]
ZthJK
ZthJC
