CD4001BMJ/883 - NATIONAL SEMICONDUCTOR

CD4001BC,CD4001BM,CD4011BC,CD4011BM

CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate

CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate

Literature Number: SNOS352A

TL/F/5939

CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate

CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate

March 1988

CD4001BM/CD4001BC Quad 2-Input

NOR Buffered B Series Gate

CD4011BM/CD4011BC Quad 2-Input

NAND Buffered B Series Gate

General Description

These quad gates are monolithic complementary MOS

(CMOS) integrated circuits constructed with N- and P-chan-

nel enhancement mode transistors. They have equal source

and sink current capabilities and conform to standard B se-

ries output drive. The devices also have buffered outputs

which improve transfer characteristics by providing very

high gain.

All inputs are protected against static discharge with diodes

to VDD and VSS.

Features

YLow power TTL Fan out of 2 driving 74L

compatibility or 1 driving 74LS

Y5V–10V–15V parametric ratings

YSymmetrical output characteristics

YMaximum input leakage 1 mA at 15V over full tempera-

ture range

Schematic Diagrams

TL/F/5939–1

CD4001BC/BM

TL/F/5939– 2

(/4 of device shown

JeAaB

Logical ‘‘1’’ eHigh

Logical ‘‘0’’ eLow

*All inputs protected by standard

CMOS protection circuit.

TL/F/5939– 5

CD4011BC/BM

TL/F/5939– 6

(/4 of device shown

JeA#B

Logical ‘‘1’’ eHigh

Logical ‘‘0’’ eLow

*All inputs protected by standard

CMOS protection circuit.

C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Obsolete

Absolute Maximum Ratings (Notes 1 and 2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

Voltage at any Pin b0.5V to VDD a0.5V

Power Dissipation (PD)

Dual-In-Line 700 mW

Small Outline 500 mW

VDD Range b0.5 VDC to a18 VDC

Storage Temperature (TS)b65§Ctoa

150§C

Lead Temperature (TL)

(Soldering, 10 seconds) 260§C

Operating Conditions

Operating Range (VDD)3V

DC to 15 VDC

Operating Temperature Range

CD4001BM, CD4011BM b55§Ctoa

125§C

CD4001BC, CD4011BC b40§Ctoa

85§C

DC Electrical Characteristics CD4001BM, CD4011BM (Note 2)

Symbol Parameter Conditions b55§Ca25§Ca125§CUnits

Min Max Min Typ Max Min Max

IDD Quiescent Device VDD e5V, VIN eVDD or VSS 0.25 0.004 0.25 7.5 mA

Current VDD e10V, VIN eVDD or VSS 0.50 0.005 0.50 15 mA

VDD e15V, VIN eVDD or VSS 1.0 0.006 1.0 30 mA

VOL Low Level VDD e5V 0.05 0 0.05 0.05 V

Output Voltage VDD e10V

k1mA 0.05 0 0.05 0.05 V

VDD e15V (0.05 0 0.05 0.05 V

VOH High Level VDD e5V 4.95 4.95 5 4.95 V

Output Voltage VDD e10V

k1mA 9.95 9.95 10 9.95 V

VDD e15V (14.95 14.95 15 14.95 V

VIL Low Level VDD e5V, VOe4.5V 1.5 2 1.5 1.5 V

Input Voltage VDD e10V, VOe9.0V 3.0 4 3.0 3.0 V

VDD e15V, VOe13.5V 4.0 6 4.0 4.0 V

VIH High Level VDD e5V, VOe0.5V 3.5 3.5 3 3.5 V

Input Voltage VDD e10V, VOe1.0V 7.0 7.0 6 7.0 V

VDD e15V, VOe1.5V 11.0 11.0 9 11.0 V

IOL Low Level Output VDD e5V, VOe0.4V 0.64 0.51 0.88 0.36 mA

Current VDD e10V, VOe0.5V 1.6 1.3 2.25 0.9 mA

(Note 3) VDD e15V, VOe1.5V 4.2 3.4 8.8 2.4 mA

IOH High Level Output VDD e5V, VOe4.6V b0.64 b0.51 b0.88 b0.36 mA

Current VDD e10V, VOe9.5V b1.6 b1.3 b2.25 b0.9 mA

(Note 3) VDD e15V, VOe13.5V b4.2 b3.4 b8.8 b2.4 mA

IIN Input Current VDD e15V, VIN e0V b0.10 b10b5b0.10 b1.0 mA

VDD e15V, VIN e15V 0.10 10b50.10 1.0 mA

Connection Diagrams

CD4001BC/CD4001BM

Dual-In-Line Package

TL/F/5939– 3

Top View

CD4011BC/CD4011BM

Dual-In-Line Package

TL/F/5939– 4

Top View

Order Number CD4001B or CD4011B

Obsolete

DC Electrical Characteristics CD4001BC, CD4011BC (Note 2)

Symbol Parameter Conditions b40§Ca25§Ca85§CUnits

Min Max Min Typ Max Min Max

IDD Quiescent Device VDD e5V, VIN eVDD or VSS 1 0.004 1 7.5 mA

Current VDD e10V, VIN eVDD or VSS 2 0.005 2 15 mA

VDD e15V, VIN eVDD or VSS 4 0.006 4 30 mA

VOL Low Level VDD e5V 0.05 0 0.05 0.05 V

Output Voltage VDD e10V

k1mA 0.05 0 0.05 0.05 V

VDD e15V (0.05 0 0.05 0.05 V

VOH High Level VDD e5V 4.95 4.95 5 4.95 V

Output Voltage VDD e10V

k1mA 9.95 9.95 10 9.95 V

VDD e15V (14.95 14.95 15 14.95 V

VIL Low Level VDD e5V, VOe4.5V 1.5 2 1.5 1.5 V

Input Voltage VDD e10V, VOe9.0V 3.0 4 3.0 3.0 V

VDD e15V, VOe13.5V 4.0 6 4.0 4.0 V

VIH High Level VDD e5V, VOe0.5V 3.5 3.5 3 3.5 V

Input Voltage VDD e10V, VOe1.0V 7.0 7.0 6 7.0 V

VDD e15V, VOe1.5V 11.0 11.0 9 11.0 V

IOL Low Level Output VDD e5V, VOe0.4V 0.52 0.44 0.88 0.36 mA

Current VDD e10V, VOe0.5V 1.3 1.1 2.25 0.9 mA

(Note 3) VDD e15V, VOe1.5V 3.6 3.0 8.8 2.4 mA

IOH High Level Output VDD e5V, VOe4.6V b0.52 b0.44 b0.88 b0.36 mA

Current VDD e10V, VOe9.5V b1.3 b1.1 b2.25 b0.9 mA

(Note 3) VDD e15V, VOe13.5V b3.6 b3.0 b8.8 b2.4 mA

IIN Input Current VDD e15V, VIN e0V b0.30 b10b5b0.30 b1.0 mA

VDD e15V, VIN e15V 0.30 10b50.30 1.0 mA

AC Electrical Characteristics*CD4001BC, CD4001BM

TAe25§C, Input tr;t

fe20 ns. CLe50 pF, RLe200k. Typical temperature coefficient is 0.3%/§C.

Symbol Parameter Conditions Typ Max Units

tPHL Propagation Delay Time, VDD e5V 120 250 ns

High-to-Low Level VDD e10V 50 100 ns

VDD e15V 35 70 ns

tPLH Propagation Delay Time, VDD e5V 110 250 ns

Low-to-High Level VDD e10V 50 100 ns

VDD e15V 35 70 ns

tTHL,t

TLH Transition Time VDD e5V 90 200 ns

VDD e10V 50 100 ns

VDD e15V 40 80 ns

CIN Average Input Capacitance Any Input 5 7.5 pF

CPD Power Dissipation Capacity Any Gate 14 pF

*AC Parameters are guaranteed by DC correlated testing.

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’

they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device

operation.

Note 2: All voltages measured with respect to VSS unless otherwise specified.

Note 3: IOL and IOH are tested one output at a time.

Obsolete

AC Electrical Characteristics*CD4011BC, CD4011BM

TAe25§C, Input tr;t

fe20 ns. CLe50 pF, RLe200k. Typical Temperature Coefficient is 0.3%/§C.

Symbol Parameter Conditions Typ Max Units

tPHL Propagation Delay, VDD e5V 120 250 ns

High-to-Low Level VDD e10V 50 100 ns

VDD e15V 35 70 ns

tPLH Propagation Delay, VDD e5V 85 250 ns

Low-to-High Level VDD e10V 40 100 ns

VDD e15V 30 70 ns

tTHL,t

TLH Transition Time VDD e5V 90 200 ns

VDD e10V 50 100 ns

VDD e15V 40 80 ns

CIN Average Input Capacitance Any Input 5 7.5 pF

CPD Power Dissipation Capacity Any Gate 14 pF

*AC Parameters are guaranteed by DC correlated testing.

Typical Performance Characteristics

Typical

Transfer Characteristics

TL/F/5939– 7

Typical

Transfer Characteristics

TL/F/5939– 8

Typical

Transfer Characteristics

TL/F/5939– 9

Typical

Transfer Characteristics

TL/F/5939– 10

TL/F/5939– 11

FIGURE 5

TL/F/5939– 12

FIGURE 6

Obsolete

Typical Performance Characteristics (Continued)

TL/F/5939– 13

FIGURE 7

TL/F/5939– 14

FIGURE 8

TL/F/5939– 15

FIGURE 9

TL/F/5939– 16

FIGURE 10 TL/F/5939– 17

FIGURE 11

TL/F/5939– 18

FIGURE 12

TL/F/5939– 19

FIGURE 13

TL/F/5939– 20

FIGURE 14

Obsolete

CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate

CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate

Physical Dimensions inches (millimeters)

Ceramic Dual-In-Line Package (J)

Order Number CD4001BMJ, CD4001BCJ, CD40011BMJ or CD4011BCJ

NS Package Number J14A

Molded Dual-In-Line Package (N)

Order Number CD4001BMN, CD4001BCN, CD4011BMN or CD4011BCN

NS Package Number N14A

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Obsolete

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