Three Phase Rectifier Bridges PSD 41 IdAVM = 70 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 41/08 PSD 41/12 PSD 41/14 PSD 41/16 PSD 41/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 70 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 515 % 110 Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque typ. (M5) Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM 0.5 10 mA mA VF VTO rT RthJC IF = 150 A T VJ = 25C 1.7 V 0.8 8 V m per Diode; DC current per module 1.45 0.242 K/W K/W RthJK per Diode; DC current per module 1.90 0.317 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 16.1 7.5 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walperdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Characteristic Value POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 41 IF(OV) -----IFSM 30 IFSM (A) TVJ=45C TVJ=150C A 25 T=150C 550 1.6 20 1.4 15 1.2 10 1 4 10 2 As 500 10 TVJ=45C 3 TVJ=150C 0 VRRM 0.8 5 1/2 VRRM IF T=25C 0 VF 1 1 VRRM 0.6 V 1.5 10 100 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 101 t[ms] 102 2 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 100 TC PSD 41 0.38 0.26 = RTHCA [K/W] 0.51 105 110 150 115 125 0.76 125 1.26 75 DC sin.180 rec.120 rec.60 rec.30 50 40 60 0 [A] 135 2.76 C 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 3 K/W Z thJK 2 Z thJC 1 Zth 0.01 0.1 t[s] 1 60 rec.30 40 20 140 145 Tamb DC sin.180 rec.120 rec.60 [A] 130 150 20 IFAVM 80 120 100 25 PVTOT 0 2 1 0.4 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated IdAV 0 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature