Sep. 2001
CM200DU-34KA
3-M6 NUTS
Tc measured point
4-φ6.5 MOUNTING HOLES
L A B E L
G1 G2
E2
E1
CM
C1
E2
C2E1
(8.25)
18.25
(18.5)
62
±0.25
80
110
93
±0.25
2.5
21.5
6156
1414
29
+1.0
–0.5
18718718
14
21 8.5
7.5
2.8
4
0.5
0.5
0.5
0.5
4
25 25
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
● IC ...................................................................200A
● VCES.......................................................... 1700V
● Insulated Type
● 2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Sep. 2001
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 1000V, IC = 200A, VGE = 15V
VCC = 1000V, IC = 200A
VGE1 = VGE2 = 15V
RG = 1.6Ω, Inductive load switching operation
IE = 200A
IE = 200A, VGE = 0V, Tj = 25°C
IE = 200A, VGE = 0V, Tj = 125°C
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied*2 (1/2 module)
Tc measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
1700
±20
200
400
200
400
1100
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
580
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
V
V
W
°C
°C
V
N • m
N • m
g
A
A
1
0.5
4.0
—
29
4.8
1.5
—
600
200
700
800
600
—
4.6
—
0.11
0.18
—
0.05✽3
mA
µA
nF
nC
µC
V
V
°C/W
—
—
3.2
3.8
—
—
—
900
—
—
—
—
—
9.6
—
2.2
—
—
0.02
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.5 V
V
ns
47
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
MAXIMUM RATINGS
(Tj = 25°C)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Test conditions
Sep. 2001
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0
400
200
300
100
0246810
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
T
j
= 25°C11
12
10
9
8
V
GE
= 20V
15
14
048121620
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
GATE-EMITTER VOLTAGE V
GE
(V)
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
300
400
200
100
0
6
5
4
3
1
2
00 300200100 400
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
0206 8 12 1610 14 18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
T
j
= 25°C
I
C
= 400A
I
C
= 200A
I
C
= 80A
10
0
2
3
5
7
10
1
2
3
5
7
10
2
10
3
2
3
5
7
12345
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
T
j
= 25°C
10
–1
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V
Sep. 2001
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
10
1
10
2
57
10
3
23 57
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
1
23
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
td(off)
td(on)
tf
tr
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
trr
Irr
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6Ω
Tj = 25°C
Inductive load
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
TMIE (s)
IGBT part:
Per unit base = Rth(j–c) = 0.11°C/W
FWDi part:
Per unit base = Rth(j–c) = 0.18°C/W
0
4
8
16
12
20
0 200 600 1200400 1000800
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
VCC = 800V
VCC = 1000V
IC = 200A
