MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA IC ................................................................... 200A VCES .......................................................... 1700V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 25 25 21.5 G1 E1 2.5 93 0.25 18 14 0.5 0.5 4 2.8 LABEL 0.5 0.5 4 7 7.5 18 14 8.5 7 21 18 14 29 +1.0 -0.5 E2 G2 6 C1 4-6.5 MOUNTING HOLES 3-M6 NUTS 80 15 E2 CIRCUIT DIAGRAM 18.25 C2E1 C1 E2 C2E1 6 G1 E1 CM (18.5) (8.25) 62 0.25 E2 G2 110 Sep. 2001 MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Torque strength -- Weight Conditions G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Ratings 1700 20 200 400 200 400 1100 -40 ~ +150 -40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 580 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A W C C V N*m N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Test conditions Parameter Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 4 5.5 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.2 3.8 -- -- -- 900 -- -- -- -- -- 9.6 -- 2.2 -- -- 0.02 -- 0.5 4.0 -- 29 4.8 1.5 -- 600 200 700 800 600 -- 4.6 -- 0.11 0.18 -- 0.053 A VCE(sat) VGE = VGES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Thermal resistance*1 Contact thermal resistance Thermal resistance VCE = 10V VGE = 0V VCC = 1000V, IC = 200A, VGE = 15V VCC = 1000V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V, Tj = 25C IE = 200A, VGE = 0V, Tj = 125C IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips mA V nF nC ns ns C V V C/W Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2001 MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 12 VGE = 20V 15 14 300 10 200 9 100 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 11 0 2 4 6 8 200 100 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 VGE = 15V Tj = 25C 5 Tj = 125C 4 3 2 1 0 0 100 200 300 400 Tj = 25C 8 6 IC = 400A 4 IC = 200A 2 0 IC = 80A 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25C 102 7 5 3 2 101 7 5 3 2 100 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) VCE = 10V Tj = 25C Tj = 125C 300 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25C COLLECTOR CURRENT (A) 400 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 Cies 101 7 5 3 2 100 7 5 Coes Cres 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Sep. 2001 MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE SWITCHING TIMES (ns) 104 7 5 3 2 103 tf td(off) 7 td(on) 5 3 2 Conditions: VCC = 1000V VGE = 15V RG = 1.6 Tj = 125C Inductive load 102 7 5 3 2 tr 101 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 trr 102 Irr 7 5 Conditions: VCC = 1000V VGE = 15V RG = 1.6 Tj = 25C Inductive load 3 2 101 1 10 COLLECTOR CURRENT IC (A) 2 3 3 2 10-1 7 5 3 2 7 5 3 2 10-2 10-2 7 5 3 2 10-3 7 5 3 2 Single Pulse TC = 25C 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) 5 7 103 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.11C/ W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.18C/ W 100 10-1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 5 7 102 IC = 200A 16 VCC = 800V 12 VCC = 1000V 8 4 0 0 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Sep. 2001