DATA SH EET
Product data sheet
Supersedes data of 1999 May 26 2003 Dec 12
DISCRETE SEMICONDUCTORS
BAL99
High-speed diode
db
ook, halfpage
M3D088
2003 Dec 12 2
NXP Semiconductors Product data sheet
High-speed diode BAL99
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage: max. 70 V
•Repetitive peak reverse voltage: max. 70 V
•Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAL99 is a high-speed switching diode fabricated in
planar techno logy, and encapsulated in the small SOT23
plastic SMD package.
PINNING
PIN DESCRIPTION
1not connected
2cathode
3anode
handbook, halfpage
21
3MAM231
1
n.c.
2
3
Fig.1 Simplified outline (SOT23) and sy mbol.
Marking code:
JFp = made in Hong Kong; JFt = made in Malaysia;
JFW = made in China.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board .
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BAL99 −plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −70 V
VRcontinuous reverse voltage −70 V
IFcontinuous forward current see Fig.2; note 1 −215 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repetitive peak forw ard current square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs−4 A
tp = 1 ms −1 A
tp = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2003 Dec 12 3
NXP Semiconductors Pr oduct dat a shee t
High-speed diode BAL99
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 50 mA 1 V
IF = 150 mA 1.25 V
IRreverse current see Fig.5
VR = 25 V 30 nA
VR = 70 V 1 µA
VR = 25 V; Tj = 150 °C30 µA
VR = 70 V; Tj = 150 °C; 50 µA
Cddiode capacit ance f = 1 MHz; VR = 0; see Fig.6 1.5 pF
trr reverse recove ry time when switc hed from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4ns
Vfr forward recove ry voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point 360 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2003 Dec 12 4
NXP Semiconductors Pr oduct dat a shee t
High-speed diode BAL99
GRAPHICAL DATA
handbook, halfpage
0 200
300
0
100
200
MLB755
100 T ( C)
amb o
IF
(mA)
Device mounted on an FR 4 printed-c i rcuit boar d.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents; Tj = 25 °C prior to surge.
2003 Dec 12 5
NXP Semiconductors Pr oduct dat a shee t
High-speed diode BAL99
10 200
0
mbh182
100
IR
(nA)
102
103
104
105
Tj (°C)
(1) (2) (3)
Fig.5 Reverse current as a fun ction of junc tion
temperature.
(1) VR = 70 V; maximum values.
(2) VR = 70 V; typical values.
(3) VR = 25 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
2003 Dec 12 6
NXP Semiconductors Pr oduct dat a shee t
High-speed diode BAL99
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very time test circuit and wave forms.
(1) IR = 1 mA.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
Fig.8 Forward recovery voltage test circuit and waveforms.
2003 Dec 12 7
NXP Semiconductors Pr oduct dat a shee t
High-speed diode BAL99
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2003 Dec 12 8
NXP Semiconductors Pr oduct dat a shee t
High-speed diode BAL99
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or co ntract, is believed to b e a ccur ate a nd reliable and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/04/pp Date of release: 2003 Dec 12 Document orde r number: 9397 750 12389
