HY5DS283222BF(P)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0 / Feb. 2005 1
128M(4Mx32) GDDR SDRAM
HY5DS283222BF(P)
Rev. 1.0 / Feb. 2005 2
1HY5DS283222BF(P)
Revision History
No. History Draft Date Remark
0.1 Defined Target Spec. Jun. 2004
0.2 1) Changed IDD & VDD_max
2) Changed tRCDWR, tWR, CL, tCK_max at 350Mhz speed bin Oct. 2004
1.0 Changed IDD Spec. Feb. 2005
Rev. 1.0 / Feb. 2005 3
1HY5DS283222BF(P)
DESCRIPTION
The Hynix HY5DS283222 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the
point-to-point applications which requires high bandwidth.
The Hynix 4Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
•The Hynix HY5DS283222BF(P) guarantee until
166MHz speed at DLL_off condition
•1.8V V
DD and VDDQ wide range max power supply
supports
• All inputs and outputs are compatible with SSTL_2
interface
• 12mm x 12mm, 144ball FBGA with 0.8mm pin pitch
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous - data transaction aligned to
bidirectional data strobe (DQS0 ~ DQS3)
• Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
• Data(DQ) and Write masks(DM) latched on the both
rising and falling edges of the data strobe
• All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
• Write mask byte controls by DM (DM0 ~ DM3)
• Programmable /CAS Latency 5 / 4 supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• Internal 4 bank operations with single pulsed /RAS
• tRAS Lock-Out function supported
• Auto refresh and self refresh supported
• 4096 refresh cycles / 32ms
• Half strength and Matched Impedance driver option
controlled by EMRS
ORDERING INFORMATION
Note) Hynix supports Lead free parts for each speed grade with same specification, except Lead free materials.
We'll add "P" character after "F" for lead free product.
For example, the part number of 300Mhz Lead free product is HY5DS283222BFP-33.
Part No. Power
Supply
Clock
Frequency Max Data Rate interface Package
HY5DS283222BF(P)-28
VDD/VDDQ
1.8V
350MHz 700Mbps/pin
SSTL_2 12mm x 12mm
144Ball FBGA
HY5DS283222BF(P)-33 300MHz 600Mbps/pin
HY5DS283222BF(P)-36 275MHz 550Mbps/pin
HY5DS283222BF(P)-4 250MHz 500Mbps/pin
Rev. 1.0 / Feb. 2005 4
1HY5DS283222BF(P)
PIN CONFIGURATION (Top View)
ROW and COLUMN ADDRESS TABLE
Items 4Mx32
Organization 1M x 32 x 4banks
Row Address A0 ~ A11
Column Address A0 ~ A7
Bank Address BA0, BA1
Auto Precharge Flag A8
Refresh 4K
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Rev. 1.0 / Feb. 2005 5
1HY5DS283222BF(P)
PIN DESCRIPTION
PIN TYPE DESCRIPTION
CK, /CK Input
Clock: CK and /CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of /CK. Output
(read) data is referenced to the crossings of CK and /CK (both directions of crossing).
CKE Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE
must be maintained high throughout READ and WRITE accesses. Input buffers, excluding
CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are
disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW
level after Vdd is applied.
/CS Input
Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-
mands are masked when CS is registered high. CS provides for external bank selection on
systems with multiple banks. CS is considered part of the command code.
BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-
CHARGE command is being applied.
A0 ~ A11 Input
Address Inputs: Provide the row address for ACTIVE commands, and the column address
and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A8 is sampled during a precharge command to
determine whether the PRECHARGE applies to one bank (A8 LOW) or all banks (A8
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The
address inputs also provide the op code during a MODE REGISTER SET command. BA0
and BA1 define which mode register is loaded during the MODE REGISTER SET command
(MRS or EMRS).
/RAS, /CAS, /WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being
entered.
DM0 ~ DM3 Input
Input Data Mask: DM(0~3) is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with that input data during a WRITE access. DM is sam-
pled on both edges of DQS. Although DM pins are input only, the DM loading matches the
DQ and DQS loading. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the
data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the
data on DQ24-Q31.
D Q S 0 ~ D Q S 3 I / O
Data Strobe: Output with read data, input with write data. Edge aligned with read data,
centered in write data. Used to capture write data. DQS0 corresponds to the data on
DQ0-Q7; DQS1 corresponds to the data on DQ8-Q15; DQS2 corresponds to the data on
DQ16-Q23; DQS3 corresponds to the data on DQ24-Q31
DQ0 ~ DQ31 I/O Data input / output pin : Data Bus
VDD/VSS Supply Power supply for internal circuits and input buffers.
VDDQ/VSSQ Supply Power supply for output buffers for noise immunity.
VREF Supply Reference voltage for inputs for SSTL interface.
NC NC No connection.
Rev. 1.0 / Feb. 2005 6
1HY5DS283222BF(P)
FUNCTIONAL BLOCK DIAGRAM
4Banks x 1Mbit x 32 I/O Double Data Rate Synchronous DRAM
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
DM(0~3)
Address
Buffer
A0-11
Bank
Control 1Mx32/Bank0
Column Decoder
Column Address
Counter
Sense AMP
2-bit Prefetch Unit
1Mx32 /Bank1
1Mx32 /Bank2
1Mx32 /Bank3
Mode
Register
Row
Decoder
Input Buffer Output Buffer
Data Strobe
Transmitter
Data Strobe
Receiver
DQS(0~3)
DS
Write Data Register
2-bit Prefetch Unit DS
DQ[0:31]
64 32
32
64
BA0,BA1
DLL
Block
CLK_DLL
CLK,
/CLK
Mode
Register
Rev. 1.0 / Feb. 2005 7
1HY5DS283222BF(P)
SIMPLIFIED COMMAND TRUTH TABLE
Command CKEn-1 CKEn CS RAS CAS WE ADDR A8/
AP BA Note
Extended Mode Register SetH X LLLL OP code 1,2
Mode Register Set H X LLLL OP code 1,2
Device Deselect
HX
HXXX
X1
No Operation LHHH
Bank Active H X L L H H RA V 1
Read
H X LHLHCA
L
V
1
Read with Autoprecharge H1,3
Write
HXLHLLCA
L
V
1
Write with Autoprecharge H1,4
Precharge All Banks
HXLLHLX
HX1,5
Precharge selected Bank LV1
Read Burst Stop H X L H H L X 1
Auto Refresh H HLLLH X 1
Self Refresh
EntryH L LLLH
X
1
Exit L H
HXXX
1
LHHH
Precharge Power
Down Mode
Entry H L
HXXX
X
1
LHHH 1
Exit L H
HXXX 1
LHHH 1
Active Power
Down Mode
Entry H L
HXXX
X
1
LVVV 1
Exit L H X 1
Note :
1. DM(0~3) states are Don’t Care. Refer to below Write Mask Truth Table.
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS.
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP
period from Prechagre command.
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+tRP).
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time
(tWR) is needed to guarantee that the last data has been completely written.
5. If A8/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be
precharged.
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Rev. 1.0 / Feb. 2005 8
1HY5DS283222BF(P)
WRITE MASK TRUTH TABLE
Function CKEn-1 CKEn /CS, /RAS,
/CAS, /WE DM(0~3) ADDR A8/
AP BA Note
Data Write H X X L X 1,2
Data-In Mask H X X H X 1,2
Note :
1. Write Mask command masks burst write data with reference to DQS(0~3) and it is not related with read data.
2. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23;
DM3 corresponds to the data on DQ24-Q31.
Rev. 1.0 / Feb. 2005 9
1HY5DS283222BF(P)
OPERATION COMMAND TRUTH TABLE - I
Current
State /CS /RAS /CAS /WE Address Command Action
IDLE
HXXX X DSEL NOP or power down3
LHHH X NOP NOP or power down3
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4
L L H H BA, RA ACT Row Activation
LLHL BA, AP PRE/PALL NOP
LLLH X AREF/SREF Auto Refresh or Self Refresh5
L L L L OPCODE MRS Mode Register Set
ROW
ACTIVE
HXXX X DSEL NOP
LHHH X NOP NOP
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP Begin read : optional AP6
L H L L BA, CA, AP WRITE/WRITEAP Begin write : optional AP6
LLHHBA, RA ACT ILLEGAL4
LLHL BA, AP PRE/PALL Precharge7
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
READ
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
L H H L X BST Terminate burst
L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL
LLHHBA, RA ACT ILLEGAL4
L L H L BA, AP PRE/PALL Term burst, precharge
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8
L H L L BA, CA, AP WRITE/WRITEAP Term burst, new write:optional AP
Rev. 1.0 / Feb. 2005 10
1HY5DS283222BF(P)
OPERATION COMMAND TRUTH TABLE - II
Current
State /CS /RAS /CAS /WE Address Command Action
WRITE
LLHHBA, RA ACT ILLEGAL4
L L H L BA, AP PRE/PALL Term burst, precharge
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
READ
WITH
AUTOPRE-
CHARGE
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST ILLEGAL
L H L H BA, CA, AP READ/READAP ILLEGAL10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,10
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
AUTOPRE-
CHARGE
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST ILLEGAL
L H L H BA, CA, AP READ/READAP ILLEGAL10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,10
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
PRE-
CHARGE
H X X X X DSEL NOP-Enter IDLE after tRP
L H H H X NOP NOP-Enter IDLE after tRP
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4,10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
LLHHBA, RA ACT ILLEGAL4,10
L L H L BA, AP PRE/PALL NOP-Enter IDLE after tRP
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
Rev. 1.0 / Feb. 2005 11
1HY5DS283222BF(P)
OPERATION COMMAND TRUTH TABLE - III
Current
State /CS /RAS /CAS /WE Address Command Action
ROW
ACTIVATING
H X X X X DSEL NOP - Enter ROW ACT after tRCD
L H H H X NOP NOP - Enter ROW ACT after tRCD
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4,10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
LLHHBA, RA ACT ILLEGAL4,9,10
LLHL BA, AP PRE/PALL ILLEGAL4,10
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
RECOVERING
H X X X X DSEL NOP - Enter ROW ACT after tWR
L H H H X NOP NOP - Enter ROW ACT after tWR
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
H X X X X DSEL NOP - Enter precharge after tDPL
L H H H X NOP NOP - Enter precharge after tDPL
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4,8,10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
REFRESHING
H X X X X DSEL NOP - Enter IDLE after tRC
L H H H X NOP NOP - Enter IDLE after tRC
LHHL X BST ILLEGAL11
L H L H BA, CA, AP READ/READAP ILLEGAL11
Rev. 1.0 / Feb. 2005 12
1HY5DS283222BF(P)
OPERATION COMMAND TRUTH TABLE - IV
Note :
1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input,
BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation.
2. All entries assume that CKE was active(high level) during the preceding clock cycle.
3. If both banks are idle and CKE is inactive(low level), then in power down mode.
4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of
that bank.
5. If both banks are idle and CKE is inactive(low level), then self refresh mode.
6. Illegal if tRCD is not met.
7. Illegal if tRAS is not met.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Illegal if tRRD is not met.
10. Illegal for single bank, but legal for other banks in multi-bank devices.
11. Illegal for all banks.
Current
State /CS /RAS /CAS /WE Address Command Action
WRITE
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11
LLHHBA, RA ACT ILLEGAL11
LLHL BA, AP PRE/PALL ILLEGAL11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
MODE
REGISTER
ACCESSING
H X X X X DSEL NOP - Enter IDLE after tMRD
L H H H X NOP NOP - Enter IDLE after tMRD
LHHL X BST ILLEGAL11
L H L H BA, CA, AP READ/READAP ILLEGAL11
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11
LLHHBA, RA ACT ILLEGAL11
LLHL BA, AP PRE/PALL ILLEGAL11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
Rev. 1.0 / Feb. 2005 13
1HY5DS283222BF(P)
CKE FUNCTION TRUTH TABLE
Note :
When CKE=L, all DQ and DQS(0~3) must be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All command can be stored after 2 clocks from low to high transition of CKE.
3. Illegal if CK is suspended or stopped during the power down mode.
4. Self refresh can be entered only from the all banks idle state.
5. Disabling CK may cause malfunction of any bank which is in active state.
Current
State
CKEn-
1CKEn /CS /RAS /CAS /WE /ADD Action
SELF
REFRESH1
H XXXXXX INVALID
L H H X X X X Exit self refresh, enter idle after tSREX
L H L H H H X Exit self refresh, enter idle after tSREX
LHLHHLX ILLEGAL
LHLHLXX ILLEGAL
L HLLXXX ILLEGAL
L LXXXXX NOP, continue self refresh
POWER
DOWN2
H XXXXXX INVALID
L H H X X X X Exit power down, enter idle
L H L H H H X Exit power down, enter idle
LHLHHLX ILLEGAL
LHLHLXX ILLEGAL
L HLLXXX ILLEGAL
L L X X X X X NOP, continue power down mode
ALL BANKS
IDLE4
H H X X X X X See operation command truth table
HLLLLHX Enter self refresh
H L H X X X X Exit power down
H L L H H H X Exit power down
HLLHHLX ILLEGAL
HLLHLXX ILLEGAL
HLLLHXX ILLEGAL
HLLLLLX ILLEGAL
L LXXXXX NOP
ANY STATE
OTHER
THAN
ABOVE
H H X X X X X See operation command truth table
H LXXXXX ILLEGAL5
L HXXXXX INVALID
L LXXXXX INVALID
Rev. 1.0 / Feb. 2005 14
1HY5DS283222BF(P)
SIMPLIFIED STATE DIAGRAM
MRS SREF
SREX
PDEN
PDEX
ACT
AREF
PDEX
PDEN
BST
READWRITE
WRITE
WRITEAP
WRITEAP
READ
READAP
READAP
PRE(PALL)
PRE(PALL)
PRE(PALL)
Command Input
Automatic Sequence
IDLE
AUTO
REFRESH
PRE-
CHARGE
POWER-UP
POWER APPLIED
MODE
REGISTER
SET
POWER
DOWN
WRITE
WITH
AUTOPRE-
CHARGE
POWER
DOWN
WRITE
READ
WITH
AUTOPRE-
CHARGE
BANK
ACTIVE
READ
SELF
REFRESH
Rev. 1.0 / Feb. 2005 15
1HY5DS283222BF(P)
POWER-UP SEQUENCE AND DEVICE INITIALIZATION
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. Except for CKE, inputs are not recognized as valid until after VREF is
applied. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS
LOW level on CKE during power-up is required to guarantee that the DQ and DQS outputs will be in the High-Z state,
where they will remain until driven in normal operation (by a read access). After all power supply and reference volt-
ages are stable, and the clock is stable, the DDR SDRAM requires a 200us delay prior to applying an executable com-
mand.
Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED
MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE
REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Reg-
ister set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command
for the Mode Register, with the reset DLL bit deactivated (i.e. to program operating parameters without resetting the
DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVC-
MOS low state. (All the other input pins may be undefined.
No power sequencing is specifi ed during power up or power down given the following cirteria :
• VDD and VDDQ are driven from a single power converter output.
• VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation).
• VREF tracks VDDQ/2.
• A minimum resistance of 42 ohms (22 ohm series resistor + 22 ohm parallel resistor - 5% tolerance) limits the
input current from the VTT supply into any pin.
If the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must
be adhered to during power up :
2. Start clock and maintain stable clock for a minimum of 200usec.
3. After stable power and clock, apply NOP condition and take CKE high.
4. Issue Extended Mode Register Set (EMRS) to enable DLL.
5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200
cycles of clock are required for locking DLL)
6. Issue Precharge commands for all banks of the device.
7. Issue 2 or more Auto Refresh commands.
8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low.
Voltage description Sequencing Voltage relationship to avoid latch-up
VDDQ After or with VDD < VDD + 0.3V
VTT After or with VDDQ < VDDQ + 0.3V
VREF After or with VDDQ < VDDQ + 0.3V
Rev. 1.0 / Feb. 2005 16
1HY5DS283222BF(P)
Power-Up Sequence
CODE
CODE
CODE
CODE
CODE
CODE
CODE CODE CODE
CODE
CODE
CODE
CODE
CODE
CODE
NOP
PRE
MRS
EMRS
PRE
NOP
MRS
AREF ACT
RD
VDD
VDDQ
VTT
VREF
/CLK
CLK
CKE
CMD
DM
ADDR
A10
BA0, BA1
DQS
DQ'S
LVCMOS Low Level
tIS tIH
tVTD
T=200usec tRP tMRD tRP tRFC tMRD
tXSRD*
READ
Non-Read
Command
Power UP
VDD and CK stable Precharge All EMRS Set MRS Set
Reset DLL
(with A8=H)
Precharge All 2 or more
Auto Refresh
MRS Set
(with A8=L)
* 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command
tMRD
Rev. 1.0 / Feb. 2005 17
1HY5DS283222BF(P)
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is program via MRS command. This command is issued by the low
signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and CKE
must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write
the data in mode register. During the the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until resetted by another MRS command.
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 0 RFU DR TM CAS Latency BT Burst Length
A2 A1 A0
Burst Length
Sequential Interleave
0 0 0 Reserved Reserved
001 2 2
010 4 4
011 8 8
1 0 0 Reserved Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1 1 1 Reserved Reserved
A3 Burst Type
0 Sequential
1 Interleave
A6 A5 A4 CAS Latency
000 Reserved
001 Reserved
010 Reserved
011 Reserved
100 4
101 5
110 Reserved
111 Reserved
A7 Test Mode
0Normal
1Vendor
test mode
A8 DLL Reset
0No
1Yes
BA0 MRS Type
0MRS
1EMRS
Rev. 1.0 / Feb. 2005 18
1HY5DS283222BF(P)
BURST DEFINITION
BURST LENGTH & TYPE
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write com-
mand. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is
set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a
given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within
the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definitionon Table
Burst Length Starting Address (A2,A1,A0) Sequential Interleave
2
XX0 0, 1 0, 1
XX1 1, 0 1, 0
4
X00 0, 1, 2, 3 0, 1, 2, 3
X01 1, 2, 3, 0 1, 0, 3, 2
X10 2, 3, 0, 1 2, 3, 0, 1
X11 3, 0, 1, 2 3, 2, 1, 0
8
000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0
Rev. 1.0 / Feb. 2005 19
1HY5DS283222BF(P)
CAS LATENCY
The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 5 / 4 clocks.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
DLL RESET
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon return-
ing to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
This device supports both Half strength driver and Matched impedance driver, intended for lighter load and/or point-to-
point environments. Half strength driver is to define about 50% of Full drive strength which is specified to be SSTL_2,
Class II, and Matched impedance driver, about 30% of Full drive strength.
Rev. 1.0 / Feb. 2005 20
1HY5DS283222BF(P)
EXTENDED MODE REGISTER SET (EMRS)
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional func-
tions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits
shown below. The Extended Mode Register is programmed via the Mode Register Set command ( BA0=1 and BA1=0)
and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either of these requirements will
result in unspecified operation.
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 RFU* DS RFU* DS DS DLL
A0 DLL enable
0Enable
1Diable
BA0 MRS Type
0MRS
1EMRS
A6 A1 Output Driver Impedance Control
00 Full
0 1 Half
10 RFU*
11 Weak
* All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage.
Rev. 1.0 / Feb. 2005 21
1HY5DS283222BF(P)
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with ≤ 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
DC CHARACTERISTICS I (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V
Parameter Symbol Rating Unit
Ambient Temperature TA0 ~ 70 oC
Storage Temperature TSTG -55 ~ 125 oC
Voltage on Any Pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD relative to VSS VDD -0.5 ~ 3.6 V
Voltage on VDDQ relative to VSS VDDQ -0.5 ~ 3.6 V
Output Short Circuit Current IOS 50 mA
Power Dissipation PD2W
Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 oC ⋅ sec
Parameter Symbol Min Typ. Max Unit Note
Power Supply Voltage VDD 1.75 1.8 2.1 V 1
Power Supply Voltage VDDQ 1.75 1.8 2.1 V 1
Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V
Input Low Voltage VIL -0.3 - VREF - 0.15 V 2
Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V
Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V3
Parameter Symbol Min. Max Unit Note
Input Leakage Current ILI -2 2 uA 1
Output Leakage Current ILO -5 5 uA 2
Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA
Output Low Voltage VOL -VTT - 0.76 V IOL = +15.2mA
Rev. 1.0 / Feb. 2005 22
1HY5DS283222BF(P)
DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Parameter Symbol Test Condition
Speed
Unit Note
28 33 36 4
Operating Current IDD0
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM
and DQS inputs changing twice per
clock cycle; address and control inputs
changing once per clock cycle
170 150 140 130 mA 1
Operating Current IDD1 B u r s t l e n g t h = 2 , O n e b a n k a c t i v e
tRC ≥ tRC(min), IOL=0mA 190 170 160 150 mA 1
Precharge Standby Current
in Power Down Mode IDD2P CKE ≤ VIL(max), tCK=min 30 25 25 25 mA
Precharge Standby Current
in Non Power Down Mode IDD2N
CKE ≥ VIH(min), /CS ≥ VIH(min), tCK =
min, Input signals are changed one
time during 2clks
140 120 110 100 mA
Active Standby Current in
Power Down Mode IDD3P CKE ≤ VIL(max), tCK=min 30 25 25 25 mA
Active Standby Current in
Non Power Down Mode IDD3N
CKE ≥ VIH(min), /CS ≥ VIH(min),
tCK=min, Input signals are changed one
time during 2clks
165 145 130 120 mA
Burst Mode Operating Cur-
rent IDD4 tCK ≥ tCK(min), IOL=0 m A
All banks active 350 300 250 250 mA 1
Auto Refresh Current IDD5 tRC ≥ tRFC(min ),
All banks active 250 200 180 150 mA 1,2
Self Refresh Current IDD6 CKE ≤ 0.2V 4.5 4.5 4.5 4.5 mA
Operating Current - Four
Bank Operation IDD7
Four bank interleaving with BL=4, Refer
to the following page for detailed test
condition
400 350 300 300 mA
Rev. 1.0 / Feb. 2005 23
1HY5DS283222BF(P)
AC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Max Unit Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.35 V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.35 V
Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ + 0.6 V 1
Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2
Parameter Value Unit
Reference Voltage VDDQ x 0.5 V
Termination Voltage VDDQ x 0.5 V
AC Input High Level Voltage (VIH, min) VREF + 0.35 V
AC Input Low Level Voltage (VIL, max) VREF - 0.35 V
Input Timing Measurement Reference Level Voltage VREF V
Output Timing Measurement Reference Level Voltage VTT V
Input Signal maximum peak swing 1.5 V
Input minimum Signal Slew Rate 1 V/ns
Termination Resistor (RT)50Ω
Series Resistor (RS)25Ω
Output Load Capacitance for Access Time Measurement (CL)30 pF
Rev. 1.0 / Feb. 2005 24
1HY5DS283222BF(P)
AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted)
Parameter Symbol
28 33 36 4
Unit Note
Min Max Min Max Min Max Min Max
Row Cycle Time tRC 17 - 15 - 14 - 13 - CK
Auto Refresh Row Cycle Time tRFC 19 - 17 - 16 - 15 - CK
Row Active Time tRAS 10 100K 9 100K 9 100K 8 100K CK
Row Address to Column Address
Delay for Read tRCDRD 6-6-5-5-
CK
Row Address to Column Address
Delay for Write tRCDWR 4-3-2-2-
CK
Row Active to Row Active Delay tRRD 4-3-3-3-
CK
Column Address to Column Address
Delay tCCD 1-1-1-1-
CK
Row Precharge Time tRP 6-6-5-5-
CK
Write Recovery Time tWR 4-3-3-3-
CK
Last Data-In to Read Command tDRL 2-2-2-2-
CK
Auto Precharge Write Recovery +
Precharge Time tDAL 10-9-8-8-
CK
System Clock Cycle Time
CL=5
tCK
2.8 10 3.3 10 3.6 10 4 10 ns
CL=4 ------410
Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
Data-Out edge to Clock edge Skew tAC -0.6 0.6 -0.6 0.6 -0.6 0.6 -0.6 0.6 ns
DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 -0.6 0.6 -0.6 0.6 -0.6 0.6 ns
DQS-Out edge to Data-Out edge
Skew tDQSQ - 0.35 - 0.35 - 0.4 - 0.4 ns
Data-Out hold time from DQS tQH tHPmin
-tQHS -tHPmin
-tQHS -tHPmin
-tQHS -tHPmin
-tQHS -ns 1,6
Clock Half Period tHP tCH/L
min -tCH/L
min -tCH/L
min -tCH/L
min -ns 1,5
Data Hold Skew Factor tQHS - 0.35 - 0.35 - 0.4 - 0.4 ns 6
Input Setup Time tIS 0.75 - 0.75 - 0.75 - 0.75 - ns 2
Input Hold Time tIH 0.75 - 0.75 - 0.75 - 0.75 - ns 2
Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK
Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK
Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.85 1.15 0.85 1.15 0.85 1.15 CK
Rev. 1.0 / Feb. 2005 25
1HY5DS283222BF(P)
Note :
1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE.
3. Data latched at both rising and falling edges of Data Strobes(DQS0~DQS3) : DQ, DM(0~3).
4. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
5. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
6. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL).
tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and
output pattern effects, and p-channel to n-channel variation of the output drivers.
7. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times.
Signal transitions through the DC region must be monotonic.
Data-In Setup Time to DQS-In
(DQ & DM) tDS 0.35 - 0.35 - 0.4 - 0.4 - ns 3
Data-In Hold Time to DQS-In
(DQ & DM) tDH 0.35 - 0.35 - 0.4 - 0.4 - ns 3
Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 CK
Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK
Write DQS Preamble Setup Time tWPRES 0-0-0-0-
ns
Write DQS Preamble Hold Time tWPREH 0.35 - 0.35 - 0.35 - 0.35 - CK
Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK
Mode Register Set Delay tMRD 2-2-2-2-
CK
Exit Self Refresh to Any Execute
Command tXSC 200-200-200-200-
CK 4
Power Down Exit Time tPDEX 2tCK
+ tIS -2tCK
+ tIS -1tCK
+ tIS -1tCK
+ tIS -CK
Average Periodic Refresh Interval tREFI -7.8-7.8-7.8-7.8
us
Parameter Symbol
28 33 36 4
Unit Note
Min Max Min Max Min Max Min Max
Rev. 1.0 / Feb. 2005 26
1HY5DS283222BF(P)
AC CHARACTERISTICS - II
Frequency CL tRC tRFC tRAS tRCDRD tRCDWR tRP tDAL Unit
350MHz (2.8ns) 5 17 19 10 6 4 6 10 tCK
300MHz (3.3ns)5151796369tCK
275MHz (3.6ns)5141695258tCK
250MHz (4.0ns)5 / 4131585258tCK
Rev. 1.0 / Feb. 2005 27
1HY5DS283222BF(P)
CAPACITANCE (TA=25oC, f=1MHz )
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter Pin Symbol Min Max Unit
Input Clock Capacitance CK, /CK CCK 13pF
Input Capacitance All other input-only pins CIN 13pF
Input / Output Capacitance DQ, DQS, DM CIO 35pF
VREF
VTT
RT=50Ω
Zo=50Ω
CL=30pF
Output
Rev. 1.0 / Feb. 2005 28
1HY5DS283222BF(P)
PACKAGE INFORMATION
12mm x 12mm, 144ball Fine-pitch Ball Grid Array
12mm±0.1mm
12mm±0.1mm
[ Ball Location ]
Ball existing
Optional (Thermal ball, NC, No ball)
Depopulated ball
8.8mm
8.8mm
0.8mm
0.86mm±0.05
0.35mm±0.05
1.2mm±0.1mm
Detailed "A"
Detailed "A"
0.12mm
0.5mm Diameter
0.55Max
0.45 Min
(MO 205-D, AE in JEDEC)
