MRF8S7170NR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz 19.7 37.1 6.2 --38.7
748 MHz 19.5 37.0 6.1 --37.5
768 MHz 19.4 37.9 6.1 --37.8
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
!Typical Pout @ 1 dB Compression Point ≃182 Watts CW
Features
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C Operation
!Designed for Digital Predistortion Error Correction Systems
!225#C Capable Plastic Package
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80#C, 170 W CW, 28 Vdc, IDQ = 1200 mA
Case Temperature 81#C, 50 W CW, 28 Vdc, IDQ = 1200 mA
R$JC
0.30
0.37
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S7170N
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
728--768 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 2021--03, STYLE 1
O M -- 7 8 0 -- 2
PLASTIC
MRF8S7170NR3
%Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 #C
Table 5. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 355 &Adc)
VGS(th) 1.5 2.3 3Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1200 mAdc, Measured in Functional Test)
VGS(Q) 2.3 3.1 3.8 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.9Adc)
VDS(on) 0.1 0.22 0.3 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, Pout = 50 W Avg., f = 748 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 18.0 19.5 21.0 dB
Drain Efficiency "D34.0 37.0 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 —dB
Adjacent Channel Power Ratio ACPR —--37.5 --35.0 dBc
Input Return Loss IRL — -- 2 4 -- 9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, Pout =50WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz 19.7 37.1 6.2 --38.7 -- 1 3
748 MHz 19.5 37.0 6.1 --37.5 -- 2 4
768 MHz 19.4 37.9 6.1 --37.8 -- 1 6
1. Part internally matched both on input and output.
(continued)
MRF8S7170NR3
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, 728--768 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —182 — W
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—16 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —65 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =50WAvg. GF—0.5 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.017 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(P1dB —0.0048 —dB/#C
4
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
Figure 1. MRF8S7170NR3 Test Circuit Component Layout
B1
CUT OUT AREA
MRF8S7170N
Rev. 0
R1 C5
C6
C7
C1
C3
C4 R2
C2
C22 C23 C24 C25
C26
C15
C20 C14
C8
C9
C12 C13
C10 C11
C16 C17 C18 C19
C21
Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead, Short 2743019447 Fair--Rite
C1 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C2 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C3, C4 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C5 47 &F, 63 V Electrolytic Capacitor 476KXM063M Illinois Capacitor
C6 6.8 &F, 100 V Chip Capacitor C4532X7R1H685KT TDK
C7 100 pF Chip Capacitor ATC100B101JT500XT ATC
C8, C9 11 pF Chip Capacitors ATC100B110JT500XT ATC
C10, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C11, C13 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C14 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C15, C16, C17, C22, C23 39 pF Chip Capacitors ATC100B390JT500XT ATC
C18, C19, C24, C25 10 &F, 25 V Chip Capacitors C5750X7R1E106KT TDK
C20 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C21, C26 470 &F, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor
R1 2K ), 1/4 W Chip Resistor CRCW12062K00FKEA Vishay
R2 4.3 ), 1/4 W Chip Resistor CRCW12064R30FKEA Vishay
PCB 0.030*,+r=3.5 RF--35 Taconic
MRF8S7170NR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
17.8
21
20.6
20.2
19.8
19.4
19
18.6
18.2
17
17.4
IRL, INPUT RETURN LOSS (dB)
710
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
-- 1 5
-- 1 9
-- 2 3
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
720 730 740 750 760 770 780 790
-- 2 7
PARC
PARC (dB)
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L IM7--U
VDD =28Vdc,P
out = 160 W (PEP), IDQ = 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 4
-- 5
50
0
-- 2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
30 90 110 130
30
60
50
55
45
"D,DRAIN EFFICIENCY (%)
-- 1 d B = 4 2 W
"D
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 3 0
-- 4 0
-- 3 5
-- 4 5
20
Gps, POWER GAIN (dB)
18.5
19.5
19
17.5
17
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
-- 2 d B = 6 0 W
-- 3 d B = 9 6 W
VDD =28Vdc,P
out =50W(Avg.),I
DQ = 1200 mA
Single--Carrier W--CDMA
IM7--L
35
-- 3 8
40
38
36
34
32
--35.5
-- 3 6
--36.5
-- 3 7
--37.5
-- 7
-- 11
-- 1
-- 1 . 5
-- 2
-- 2 . 5
0
-- 0 . 5
70
-- 3 40
-- 2 5
18
ACPR
VDD =28Vdc,I
DQ = 1200 mA
f = 748 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
6
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
TYPICAL CHARACTERISTICS
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
10
22
0
72
36
24
12
"D, DRAIN EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
20
100 300
-- 6 0
ACPR (dBc)
0
-- 2 0
-- 3 0
Figure 6. Broadband Frequency Response
10
22
600
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1200 mA
14
650
GAIN (dB)
Gain
700 800 900 1000
IRL
-- 3 0
0
-- 1 5
-- 2 0
-- 2 5
IRL (dB)
12
768 MHz
18
16
60
48
-- 5 0
-- 4 0
748 MHz
728 MHz
20
-- 1 0
-- 5
14
12 748 MHz
728 MHz
1
VDD =28Vdc,I
DQ = 1200 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
748 MHz
768 MHz
768 MHz
728 MHz
10
18
16
750 850 950
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MRF8S7170NR3
7
RF Device Data
Freescale Semiconductor
VDD =28Vdc,I
DQ = 1200 mA, Pout =50WAvg.
f
MHz
Zsource
)
Zload
)
710 0.876 -- j2.237 1.685 -- j0.887
720 0.910 -- j2.150 1.659 -- j0.776
730 0.942 -- j2.080 1.650 -- j0.683
740 0.970 -- j2.032 1.660 -- j0.610
750 0.981 -- j2.013 1.677 -- j0.563
760 0.961 -- j2.009 1.688 -- j0.550
770 0.911 -- j1.996 1.687 -- j0.551
780 0.843 -- j1.955 1.660 -- j0.557
790 0.787 -- j1.881 1.620 + j0.548
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ = 1200 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
54
53
50
38
Actual
Ideal
49
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
56
59
60
3431 4232 39 41
748 MHz
58
57
55
52
51
33 35 37 40
728 MHz
768 MHz
748 MHz
728 MHz
768 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
728 229 53.6 310 54.9
748 227 53.5 303 54.8
768 214 53.3 293 54.6
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
728 P1dB 0.61 -- j2.32 0.72 -- j1.32
748 P1dB 0.73 -- j2.60 0.81 -- j1.27
768 P1dB 0.72 -- j2.82 0.58 -- j1.46
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S7170NR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
MRF8S7170NR3
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
!AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
!AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2010 !Initial Release of Data Sheet
1Oct. 2010 !Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2.
MRF8S7170NR3
13
RF Device Data
Freescale Semiconductor
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescaletand the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
-Freescale Semiconductor, Inc. 2010. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33169354848(French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF8S7170N
Rev. 1, 10/2010
