TZA3011A; TZA3011B 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Rev. 06 -- 20 January 2005 Product data sheet 1. General description The TZA3011 is a fully integrated laser driver for optical transmission systems with data rates up to 3.2 Gbit/s. The TZA3011 incorporates all the necessary control and protection functions for a laser driver application with very few external components required and low power dissipation. The dual-loop controls the average monitor current in a programmable range from 150 A to 1300 A and the extinction ratio in a programmable range from 5 to 15 (linear scale). The design is made in the Philips BiCMOS RF process and is available in a HBCC32 package or as bare die. The TZA3011A is intended for use in an application with an AC-coupled laser diode with a 3.3 V laser supply voltage. The TZA3011B is intended for use in an application with a DC-coupled laser diode for both 3.3 V and 5 V laser supply voltages. 2. Features 2.1 General A-rateTM from 30 Mbit/s to 3.2 Gbit/s Bias current up to 100 mA Modulation current up to 100 mA Rise and fall times typical 80 ps Jitter below 20 ps (peak-to-peak value) Modulation output voltage up to 2 V dynamic range 1.2 V minimum voltage on the modulation output pin and 0.4 V minimum voltage on pin BIAS Retiming function via external clock with disable option Pulse width adjustment function with disable option Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) compatible data and clock inputs Internal common mode voltage available for AC-coupled data and clock inputs and for single-ended applications 3.3 V supply voltage TZA3011A: AC-coupled laser for 3.3 V laser supply TZA3011B: DC-coupled laser for 3.3 V and 5 V laser supply TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 2.2 Control features Dual-loop control for constant and accurate optical average power level and extinction ratio (up to 2.7 Gbit/s) Optional average power loop control (up to 3.2 Gbit/s) Optional direct setting of modulation and bias currents 2.3 Protection features Alarm function on operating current Alarm function on monitor current Enable function on bias and modulation currents Soft start on bias and modulation currents 3. Applications SDH/SONET optical transmission systems High current drivers for converters High current drivers for high frequencies 4. Ordering information Table 1: Ordering information Type number TZA3011AVH Package Name Description Version HBCC32 plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm SOT560-1 - bare die; 2 560 x 2 510 x 380 m - TZA3011BVH TZA3011UH 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 2 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 5. Block diagram AVR 32 (57) MODOUT GNDCCB ER (51, 53) 31 (56) MODIN BIASOUT 29 (52) 30 (55) BIASIN 28 (50) ACDC MON 27 (49) 26 (48) (46) (44, 45) 25 VCCA VCCD 2 (3, 4) 100 A 100 A 1 (1, 2) CURRENT CONVERSION Ione dual loop: IER = 1.2 V/RER IBIAS (43) 24 VCCO BIAS V/I 100 mA/V average loop: ER = GND 23 Izero GND V/I 100 mA/V CONTROL BLOCK IMON DIN 100 TEST CIN GNDRF CINQ GND GNDESD ALRESET MUX 20 k POST AMP 18 (28, 33, 35, 36, 42) Imod FF 20 k 100 7 (13) 8 PRE AMP PULSE WIDTH ADJUST LA LA LAQ LAQ GND GNDO D 6 (12) (7, 8, 9, 10) (37, 39) 21 (29, 30) 19 100 4 (6) 5 (11) (40, 41) 22 (31, 32) 20 3 (5) 20 k DINQ 100 (27) 17 C 20 k TZA3011A TZA3011B (14, 47) VCCD - 1.32 V 9 (15) 10 k PWA disable retiming: VCIN, VCINQ < 0.3 V 1.4 V 3.3 V Imod/1500 10 (16) ENABLE + R ALARM OPERATING CURRENT Q ALARM MONITOR CURRENT R V AND I REFERENCE Q (26) enable (17) GNDDFT i.c. Iav(MON)/12.5 IBIAS/750 20 k 1.4 V (20, 22, 34, 38, 54) 11 (18) ALOP 12 (19) ALMON 13 (21) MAXOP 14 (23) 15 (24) 16 (25) GNDRF mgt888 VTEMP MAXMON RREF The numbers in parenthesis refer to the bare die version. Fig 1. Block diagram 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 3 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 6. Pinning information AVR ER MODOUT MODIN BIASOUT BIASIN MON 32 31 30 29 28 27 26 6.1 Pinning 25 VCCO 2 24 BIAS DIN 3 23 GND DINQ 4 22 LA 21 LA VCCA 1 VCCD TEST 5 TZA3011AVH TZA3011BVH ENABLE 16 PWA RREF 17 15 9 MAXMON ALRESET 14 GND 13 18 VTEMP 8 MAXOP GND 12 LAQ 11 LAQ 19 ALOP 20 7 ALMON 6 10 CIN CINQ 001aac295 Transparent top view Fig 2. Pin configuration TZA3011A and TZA3011B 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 4 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers AVR ER MODOUT GNDCCB MODIN GNDCCB BIASOUT BIASIN MON GNDESD ACDC 2.56 mm 57 56 55 53 52 51 50 49 48 47 46 45 44 VCCO VCCO 3 4 43 BIAS 42 GNDO DIN 5 DINQ 6 GNDRF 7 41 40 39 37 LA LA LA LA GNDRF 8 36 GNDO GNDRF 9 35 GNDO GNDRF 10 33 GNDO TEST 11 CIN 12 32 31 30 29 LAQ LAQ LAQ LAQ 28 GNDO 27 PWA y i.c. 20 i.c. 22 16 17 18 19 21 23 24 25 26 GNDRF TZA3011UH RREF 15 i.c. 34 MAXMON ALRESET 0 VTEMP 14 0 MAXOP 13 x ALMON CINQ GNDESD i.c. 38 ALOP VCCD VCCD i.c. 54 GNDDFT 1 2 ENABLE VCCA VCCA 2.51 mm mgu553 Fig 3. Bonding pad location TZA3011UH 6.2 Pin description Table 2: Pin description TZA3011A and TZA3011B Symbol Pin Description GND die pad common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground VCCA 1 analog supply voltage VCCD 2 digital supply voltage DIN 3 non-inverted data input (RF input) DINQ 4 inverted data input (RF input) TEST 5 test pin or test pad; must be connected to ground CIN 6 non-inverted clock input (RF input) CINQ 7 inverted clock input (RF input) GND 8 ground ALRESET 9 alarm reset input; resets ALMON and ALOP alarms ENABLE 10 enable input for modulation and bias current ALOP 11 alarm output on operating current (open-drain) ALMON 12 alarm output on monitor diode current (open-drain) 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 5 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Table 2: Pin description TZA3011A and TZA3011B ...continued Symbol Pin Description MAXOP 13 threshold level input for alarm on operating current VTEMP 14 temperature dependent voltage output source MAXMON 15 threshold level input for alarm on monitor diode current RREF 16 reference current input; must be connected to ground with an accurate (1 %) 10 k resistor PWA 17 pulse width adjustment input GND 18 ground LAQ 19 inverted laser modulation output (RF output); output for dummy load LAQ 20 inverted laser modulation output (RF output); output for dummy load LA 21 non-inverted laser modulation output (RF output); output for laser LA 22 non-inverted laser modulation output (RF output); output for laser GND 23 ground BIAS 24 current source output for the laser bias current VCCO 25 supply voltage for the output stage and the laser diode MON 26 input for the monitor photodiode (RF input) BIASIN 27 input for the bias current setting BIASOUT 28 output of the control block for the bias current MODIN 29 input for the modulation current setting MODOUT 30 output of the control block for the modulation current ER 31 input for the optical extinction ratio setting AVR 32 input for the optical average power level setting Table 3: Bonding pad description TZA3011UH [1] Symbol Pad X GND substrate - Y Description - common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground VCCA 1 -1123.9 +1029.3 analog supply voltage VCCA 2 -1123.9 +949.3 analog supply voltage VCCD 3 -1123.9 +844.3 digital supply voltage VCCD 4 -1123.9 +764.3 digital supply voltage DIN 5 -1124.0 +604.3 non-inverted data input (RF input) DINQ 6 -1124.9 +393.3 inverted data input (RF input) GNDRF 7 -1123.9 +244.5 ground GNDRF 8 -1123.9 +139.4 ground GNDRF 9 -1123.9 +4.7 ground GNDRF 10 -1123.9 -100.3 ground TEST 11 -1123.4 -253.4 test pin or test pad; must be connected to ground CIN 12 -1123.9 -441.2 non-inverted clock input (RF input) CINQ 13 -1123.9 -697.1 inverted clock input (RF input) GNDESD 14 -1123.9 -850.8 ground ALRESET 15 -1123.9 -991.4 alarm reset input; resets ALMON and ALOP alarms 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 6 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Table 3: Bonding pad description TZA3011UH [1] ...continued Symbol Pad X Y Description ENABLE 16 -829.8 -1123.7 enable input for modulation and bias current GNDDFT 17 -665.6 -1124.0 ground ALOP 18 -504.9 -1124 alarm output on operating current (open-drain) ALMON 19 -267.6 -1124.3 alarm output on monitor diode current (open-drain) i.c. 20 [2] -221.5 -344.4 internally connected MAXOP 21 -98.5 -1124.3 threshold level input for alarm on operating current i.c. 22 [2] -48.6 -368.4 internally connected VTEMP 23 +294.0 -1124.2 temperature dependent voltage output source MAXMON 24 +466.9 -1124.2 threshold level input for alarm on monitor diode current RREF 25 +694.9 -1124.0 reference current input; must be connected to ground with an accurate (1 %) 10 k resistor GNDRF 26 +860.3 -1124.0 ground PWA 27 +1098.9 -979.4 pulse width adjustment input GNDO 28 +1099.0 -829.7 ground LAQ 29 +1099.0 -691.2 inverted laser modulation output (RF output); output for dummy load LAQ 30 +1099.0 -611.2 inverted laser modulation output (RF output); output for dummy load LAQ 31 +1099.0 -506.4 inverted laser modulation output (RF output); output for dummy load LAQ 32 +1099.0 -426.4 inverted laser modulation output (RF output); output for dummy load GNDO 33 +1099.8 -247.0 ground i.c. 34 [2] +839.0 -194.4 internally connected GNDO 35 +1099.8 -142.0 ground GNDO 36 +1099.8 -36.8 ground LA 37 1099.1 105.4 non-inverted laser modulation output (RF output); output for laser i.c. 38 [2] 839.0 179.6 internally connected LA 39 1099.1 185.4 non-inverted laser modulation output (RF output); output for laser LA 40 1099.1 290.5 non-inverted laser modulation output (RF output); output for laser LA 41 1099.1 370.5 non-inverted laser modulation output (RF output); output for laser GNDO 42 1099.1 670.8 ground BIAS 43 1099.0 804.8 current source output for the laser bias current VCCO 44 1099.0 944.4 supply voltage for the output stage and the laser diode VCCO 45 1099.0 1024.4 supply voltage for the output stage and the laser diode ACDC 46 [3] 942.5 1124.3 AC or DC coupled laser 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 7 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Table 3: Bonding pad description TZA3011UH [1] ...continued Symbol Pad X Y Description GNDESD 47 765.0 1123.8 ground MON 48 602.1 1123.7 input for the monitor photodiode (RF input) BIASIN 49 431.7 1123.8 input for the bias current setting BIASOUT 50 267.6 1123.8 output of the control block for the bias current GNDCCB 51 100.8 1123.8 ground MODIN 52 -82.7 +1123.8 input for the modulation current setting GNDCCB 53 -241.1 +1123.8 ground i.c. 54 [2] -274.4 +954.4 internally connected MODOUT 55 -487.2 +1123.8 output of the control block for the modulation current ER 56 -645.6 +1123.8 input for the optical extinction ratio setting AVR 57 -802.8 +1123.8 input for the optical average power level setting [1] All GND connections should be used. All ground pads must be connected to ground. Recommended order of bonding: all GND first, then VCCA,VCCD and VCCO supplies and finally the input and output pins. All coordinates are referenced, in m, to the center of the die. [2] Pad is internally connected, do not use. [3] ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect this pad to ground. Table 4: Physical characteristics of TZA3011UH Parameter Value Glass passivation 0.3 m PSG (Phospho Silicate Glass) on top of 0.8 m of silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 80 m x 80 m (pad size = 90 m x 90 m) Metallization 2.8 m AlCu Thickness 380 m nominal Size 2.560 mm x 2.510 mm (6.43 mm2) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature < 440 C; recommended die attachment is by gluing Attach time < 15 s 7. Functional description 7.1 Data and clock input The TZA3011 operates with differential Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the data and clock inputs carry a complementary signal with the specified peak-to-peak value (true differential excitation). 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 8 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers The circuit generates an internal common mode voltage for AC-coupled data and clock inputs and for single-ended applications. If VDIN > VDINQ, the modulation current is sunk by the LA pins and corresponds to an optical `one' level of the laser. 7.2 Retiming The retiming function synchronizes the data with the clock to improve the jitter performance. The data latch switches on the rising edge of the clock input. The retiming function is disabled when both clock inputs are below 0.3 V. At start-up the initial polarity of the laser is unknown before the first rising edge of the clock input. 7.3 Pulse width adjustment The on-duration of the laser current can be adjusted from -100 ps to +100 ps. The adjustment time is set by resistor RPWA. The maximum allowable capacitive load on pin PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to ground. 7.4 Modulator output stage The output stage is a high-speed bipolar differential pair with typical rise and fall times of 80 ps and with a modulation current source of up to 100 mA when the LA pins are connected to VCCO. The modulation current switches between the LA and LAQ outputs. For a good RF performance the inactive branch carries a small amount of the modulation current. The LA output is optimized for the laser allowing a 2 V dynamic range and a 1.2 V minimum voltage. The LAQ output is optimized for the dummy load. The output stage of the TZA3011A is optimized for AC-coupled lasers and the output stage of the TZA3011B is optimized for DC-coupled lasers. The BIAS output is optimized for low voltage requirements (0.4 V minimum for a 3.3 V laser supply; 0.8 V minimum for a 5 V laser supply). 7.5 Dual-loop control The TZA3011 incorporates a dual-loop control for a constant, accurate and temperature-independent control of the optical average power level and the extinction ratio. The dual-loop guarantees constant optical `one' and `zero' levels which are independent of the laser temperature and the laser age. The dual-loop operates by monitoring the current of the monitor photodiode which is directly proportional to the laser emission. The `one' and `zero' current levels of the monitor diode are captured by the detector of the dual-loop control. The pin MON for the monitor photodiode current is an RF input. The average monitor current is programmable over a wide current range from 150 A to 1300 A for both the dual-loop control and the average loop control. The extinction ratio is programmable from 5 to 15. 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 9 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers The maximum allowable capacitive load on pins AVR, ER, BIASOUT and MODOUT is 100 pF. 7.6 Average loop control The average power control loop maintains a constant average power level of the monitor current over temperature and lifetime of the laser. The average loop control is activated by short-circuiting pin ER to ground. 7.7 Direct current setting The TZA3011 can also operate in open-loop mode with direct setting of the bias and modulation currents. The bias and modulation current sources are transconductance amplifiers and the output currents are determined by the BIASIN and MODIN voltages respectively. The bias current source has a bipolar output stage with minimum output capacitance for optimum RF performance. 7.8 Soft start At power-up the bias and modulation current sources are released when VCCA > 2.7 V and the reference voltage has reached the correct value of 1.2 V. The control loop starts with minimum bias and modulation current at power-up and when the device is enabled. The current levels increase until the MON input current matches the programmed average level and, in the case of dual-loop control, the extinction ratio. 7.9 Alarm functions The TZA3011 features two alarm functions for the detection of excessive laser operating current and monitor diode current due to laser ageing, laser malfunctioning or a too high laser temperature. The alarm threshold levels are programmed by a resistor or a current source. In the TZA3011A, for the AC-coupled application, the operating current is equal to the bias current. In the TZA3011B, for the DC-coupled application, the operating current equals the bias current plus half of the modulation current. 7.10 Enable A LOW-level on the enable input disables the bias and modulation current sources: the laser is off. A HIGH-level on the enable input or an open enable input switches both current sources on: the laser is operational. 7.11 Reference block The reference voltage is derived from a band gap circuit and is available at pin RREF. An accurate (1 %) 10 k resistor has to be connected to pin RREF to provide the internal reference current. The maximum capacitive load on pin RREF is 100 pF. The reference voltage on the setting pins (MAXOP, MAXMON, PWA, ER and AVR) is buffered and derived from the band gap voltage. The output voltage on pin VTEMP reflects the junction temperature of the TZA3011, the temperature coefficient of VVTEMP equals -2.2 mV/K. 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 10 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 8. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to ground; positive currents flow into the IC. Symbol Parameter VCCD VCCA VCCO output stage supply voltage Vo(LA) Vo(LAQ) VBIAS Vn In Min Max Unit digital supply voltage -0.5 +3.5 V analog supply voltage -0.5 +3.5 V 3.3 V laser supply -0.5 +3.5 V 5 V laser supply (TZA3011B only) -0.5 +5.3 V TZA3011A; VCCO = 3.3 V 1.2 4.5 V TZA3011B; VCCO = 3.3 V 0.8 4.1 V TZA3011B; VCCO = 5 V 1.2 4.5 V TZA3011A; VCCO = 3.3 V 1.8 4.5 V TZA3011B; VCCO = 3.3 V 1.6 4.5 V TZA3011B; VCCO = 5 V 2.0 5.2 V TZA3011A; VCCO = 3.3 V 0.4 3.6 V TZA3011B; VCCO = 3.3 V 0.4 3.6 V TZA3011B; VCCO = 5 V 0.8 4.1 V analog inputs and outputs -0.5 VCCA + 0.5 V digital inputs and outputs -0.5 VCCD + 0.5 V MAXOP, MAXMON, RREF, PWA, ER and AVR -1.0 0 mA VTEMP, BIASOUT and MODOUT -1.0 +1.0 mA ALOP, ALMON and MON 0 5.0 mA output voltage at pin LA output voltage at pin LAQ bias voltage Conditions voltage on other input and output pins input current on pins Tamb ambient temperature -40 +85 C Tj junction temperature -40 +125 C Tstg storage temperature -65 +150 C 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 11 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 9. Thermal characteristics Table 6: Thermal characteristics In compliance with JEDEC standards JESD51-5 and JESD51-7. Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Conditions Typ Unit 4 layer printed circuit board in still air with 9 plated vias connected with the heatsink and the first ground plane in the printed circuit board 35 K/W HBCC32 die pad soldered to printed circuit board 60 K/W 10. Static characteristics Table 7: Characteristics Tamb = -40 C to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 V to 3.47 V; VCCD = 3.14 V to 3.47 V; VCCO = 3.14 V to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies: pins VCCA, VCCD and VCCO VCCA analog supply voltage 3.14 3.3 3.47 V VCCD digital supply voltage 3.14 3.3 3.47 V VCCO RF output supply voltage 3.3 V laser supply 3.14 3.3 3.47 V 5 V laser supply 4.75 5.0 5.25 V ICCA analog supply current 30 40 50 mA ICCD digital supply current 35 45 55 mA ICCO RF output supply current 3.3 V laser supply 8 15 25 mA 5 V laser supply - 20 - mA - 264 - mW 330 400 500 mW 1000 mV pins LA and LAQ open-circuit Pcore core power dissipation core excluding output currents Io(LA), Io(LAQ) and IBIAS; PWA and retiming off Ptot total power dissipation VBIAS = 3.3 V; IBIAS = 20 mA; Imod = 16 mA [1] Data and clock inputs: pins DIN and CIN Vi(p-p) input voltage swing (peak-to-peak value) Vi(DIN) = (VCCD - 2 V) to VCCD; Vi(CIN) = (VCCD - 2 V) to VCCD 100 - Vint(cm) internal common mode voltage AC-coupled inputs - VCCD - 1.32 - V VIO input offset voltage -10 0 +10 mV Zi(dif) differential input impedance 80 100 125 Zi(cm) common mode input impedance 8 10 13 k Vi(CIN)(dis) input voltage for disabled retiming VCIN = VCINQ - - 0.3 V [2] Monitor photodiode input: pin MON Vi(MON) input voltage IMON = 50 A to 2500 A 0.9 1.1 1.3 V Zi(MON) input impedance IMON = 50 A to 2500 A - 27 - 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 12 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Table 7: Characteristics ...continued Tamb = -40 C to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 V to 3.47 V; VCCD = 3.14 V to 3.47 V; VCCO = 3.14 V to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 5 7 - 7 8.5 linear scale 13 15 - dB scale 11 11.8 - dB Extinction ratio setting for dual-loop control: pins MON and ER ERmin low extinction ratio setting dual-loop set-up; IER > -30 A [3] linear scale dB scale ERmax high extinction ratio setting dual-loop set-up; IER < -10 A dB [3] ERacc relative accuracy of ER temperature and VCCA variations; ER = 10; AVR = 550 A -10 - +10 % Vref(ER) reference voltage on pin ER IER = -35 A to -5 A; CER < 100 pF 1.15 1.20 1.25 V IER current sink on pin ER -35 - -5 A dual-loop (ER = 5) - - 150 A average loop (pin ER to GND) - - 150 A Average setting for dual-loop control and average loop control: pins MON and AVR Iav(MON)(low) Iav(MON)(max) low average monitor current setting maximum average monitor current setting IAVR > -280 A IAVR = -15.0 A dual-loop (ER = 5) 1200 1300 - A average loop (pin ER to GND) 1200 1300 - A Iav(MON) relative accuracy of average current on pin MON temperature and VCCA variations; ER = 10; AVR = 550 A -10 - +10 % Vref(AVR) reference voltage on pin AVR IAVR = -250 A to -15 A; CAVR < 100 pF 1.15 1.20 1.25 V Isink(AVR) current sink on pin AVR -280 - -15 A VMODOUT = 0.5 V to 1.5 V; CMODOUT < 100 pF - - -200 A VMODOUT = 0.5 V to 1.5 V; CMODOUT < 100 pF 200 - - VBIASOUT = 0.5 V to 1.5 V; CBIASOUT < 100 pF - - -200 A VBIASOUT = 0.5 V to 1.5 V; CBIASOUT < 100 pF 200 - - A VBIAS = VCCO = 3.3 V 90 110 125 mA/V VBIAS = 4.1 V; VCCO = 5.0 V 95 110 130 mA/V -95 A Control loop modulation output: pin MODOUT Isource(MODOUT) source current Isink(MODOUT) sink current A Control loop bias output: pin BIASOUT Isource(BIASOUT) source current Isink(BIASOUT) sink current Bias current source: pins BIASIN and BIAS gm(bias) Isource(BIASIN) bias transconductance source current at pin BIASIN VBIASIN = 0.5 V to 1.5 V VBIASIN = 0.5 V to 1.5 V 9397 750 14437 Product data sheet -110 -100 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 13 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Table 7: Characteristics ...continued Tamb = -40 C to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 V to 3.47 V; VCCD = 3.14 V to 3.47 V; VCCO = 3.14 V to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IBIAS(max) maximum bias current VBIASIN = 1.8 V 100 - - mA IBIAS(min) minimum bias current VBIASIN = 0 V to 0.4 V - 0.2 0.4 mA IBIAS(dis) bias current at disable VENABLE < 0.8 V - - 30 A VBIAS output voltage on pin BIAS normal operation VCCO = 3.3 V 0.4 - 3.6 V VCCO = 5 V 0.8 - 4.1 V VLA = VLAQ = VCCO = 3.3 V 78 90 105 mA/V VLA = VLAQ = VCCO = 4.5 V 80 95 110 mA/V -110 -100 -95 A Modulation current source: pin MODIN gm(mod) Isource(MODIN) modulation transconductance source current at pin MODIN VMODIN = 0.5 V to 1.5 V VMODIN = 0.5 V to 1.5 V Modulation current outputs: pins LA Io(LA)(max)(on) maximum laser modulation VMODIN = 1.8 V; VLA = VCCO = 3.3 V output current at LA on [4] 100 - - mA Io(LA)(min)(on) minimum laser modulation output current at LA on VMODIN = 0 V to 0.4 V; VLA = VCCO = 3.3 V [4] - 5 6 mA Io(LA)(min)(off) minimum laser modulation output current at LA off VLA = VCCO = 3.3 V [4] VMODIN = 0.5 V - - 0.8 mA VMODIN = 1.5 V - - 2 mA 80 100 125 Zo(LA), Zo(LAQ) output impedance LA and LAQ pins Io(LA)(dis), Io(LAQ)(dis) non-inverted and inverted laser modulation output current at disable VENABLE < 0.8 V - - 200 A Vo(LA)min minimum output voltage at pin LA TZA3011A; VCCO = 3.3 V 1.6 - - V TZA3011B; VCCO = 3.3 V 1.2 - - V TZA3011B; VCCO = 5 V 1.6 - - V Enable function: pin ENABLE VIL LOW-level input voltage bias and modulation currents disabled - - 0.8 V VIH HIGH-level input voltage bias and modulation currents enabled 2.0 - - V Rpu(int) internal pull-up resistance 16 20 30 k Alarm reset: pin ALRESET VIL LOW-level input voltage no reset - - 0.8 V VIH HIGH-level input voltage reset 2.0 - - V Rpd(int) internal pull-down resistance 7 10 15 k 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 14 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers Table 7: Characteristics ...continued Tamb = -40 C to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 V to 3.47 V; VCCD = 3.14 V to 3.47 V; VCCO = 3.14 V to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 1.15 1.2 1.25 V VCCO = 3.3 V 700 800 900 VCCO = 5.0 V 750 850 950 0 - 0.4 V V Alarm operating current: pins MAXOP and ALOP Vref(MAXOP) reference voltage on pin MAXOP IMAXOP = 10 A to 200 A NMAXOP ratio of Ioper(alarm) and IMAXOP Ioper(alarm) = 7.5 mA to 150 mA VD(ALOP)L drain voltage at active alarm IALOP = 500 A Alarm monitor current: pins MAXMON and ALMON Vref(MAXMON) reference voltage on pin MAXMON IMAXMON = 10 A to 200 A 1.15 1.2 1.25 NMAXMON ratio of IMON(alarm) and IMAXMON IMON(alarm) = 150 A to 3000 A 10 15 20 VD(ALMON)L drain voltage at active alarm IALMON = 500 A 0 - 0.4 V 1.15 1.20 1.25 V Reference block: pins RREF and VTEMP VRREF reference voltage RRREF = 10 k (1 %); CRREF < 100 pF VVTEMP temperature dependent voltage Tj = 25 C; CVTEMP < 2 nF [5] 1.15 1.20 1.25 V TCVTEMP temperature coefficient of VVTEMP Tj = -25 C to +125 C [5] - -2.2 - mV/K Isource(VTEMP) source current of pin VTEMP - - -1 mA Isink(VTEMP) sink current of pin VTEMP 1 - - mA [1] The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS will be VCCO minus the laser diode voltage which results in a lower total power dissipation. [2] The specification of the offset voltage is guaranteed by design. [3] Any (AVR, ER) settings need to respect IMON > 50 A and IMON < 2500 A. Therefore, for large ER settings, minimum/maximum AVR cannot be reached. [4] The relation between the sink current Io(LA) and the modulation current Imod is: I o ( LA ) = I mod x ------------------------------- where ZL(LA) is the 100 + Z L ( LA ) 100 external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current is divided between ZL(LA) and the 100 internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical ZL(LA) of 25 will result in an Io(LA) current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real application load. [5] VVTEMP = 1.31 + TCVTEMP x Tj and Tj = Tamb + Ptot x Rth(j-a). 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 15 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 11. Dynamic characteristics Table 8: Characteristics Tamb = -40 C to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 V to 3.47 V; VCCD = 3.14 V to 3.47 V; VCCO = 3.14 V to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit bit rate dual-loop control 0.03 - 2.7 Gbit/s 0.03 - 3.2 Gbit/s - - 20 ps RF path BR average loop control JLA(p-p) jitter of pin LA output signal (peak-to-peak value) RL = 25 tr rise time of voltage on pin LA 20 % to 80 %; RL = 25 ; Imod = 17 mA [2] [3] 70 85 110 ps tf fall time of voltage on pin LA 80 % to 20 %; RL = 25 ; Imod = 17 mA [2] [3] 50 70 100 ps tsu(D) data input set-up time 60 - - ps th(D) data input hold time 60 - - ps ten(start) start-up time at enable direct current setting - - 1 s dual-loop control operating currents fully settled 30 - - ms [1] Current control internal time constant tcint Pulse width adjustment tPWA(min) minimum pulse width adjustment on pins LA RPWA = 6.7 k; CPWA < 100 pF - - -100 ps tPWA pulse width adjustment on pins LA RPWA = 10 k; CPWA < 100 pF - 0 - ps tPWA(max) maximum pulse width adjustment RPWA = 20 k; CPWA < 100 pF on pins LA 80 100 - ps [1] The output jitter specification is guaranteed by design. [2] With a 25 load on the LA pins: Io(LA) = 14 mA when Imod = 17 mA. [3] For high modulation current, tr and tf are impacted by total inductance between the LA pins and the laser connection. 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 16 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12. Application information 12.1 Design equations 12.1.1 Bias and modulation currents The bias and modulation currents are determined by the voltages on pins BIASIN and MODIN. These voltages are applied by pins BIASOUT and MODOUT for dual-loop control. For average loop control the BIASIN voltage is applied by pin BIASOUT and the MODIN voltage is applied by an external voltage source or an external resistor RMODIN. For direct setting of bias and the modulation current, the BIASIN and MODIN voltages have to be applied by external voltage sources or by RBIASIN and RMODIN external resistors connected on pins BIASIN and MODIN: IBIAS = (RBIASIN x 100 A - 0.5 V) x gm(bias) [mA] Imod = (RMODIN x 100 A - 0.5 V) x gm(mod) + 5 [mA] The bias and modulation current sources operate with an input voltage range from 0.5 V to 1.5 V. The output current is at its minimum level for an input voltage below 0.4 V; see Figure 4 and Figure 5. The bias and modulation current sources are temperature compensated and the adjusted current level remains stable over the temperature range. The bias and modulation currents increase with increasing resistor values for RBIASIN and RMODIN respectively, this allows resistor tuning to start at a minimum current level. 105 110 Imod = Io(LA) (mA) I BIAS (mA) gm(mod) = 100 mA/V gm(bias) = 110 mA/V I o(LA)(min) 5 I BIAS(min) 0 0.2 0 0.5 VBIASIN (V) 0.5 VMODIN (V) 1.5 1.5 mgt891 mgt890 LA current when LA output is on. Vo(LA) = VCCO. Fig 4. Bias current as a function of BIASIN voltage Fig 5. Modulation current as a function of MODIN voltage 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 17 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12.1.2 Average monitor current and extinction ratio The average monitor current Iav(MON) in dual-loop or average loop operation is determined by the source current (IAVR) of the AVR pin. The current can be sunk by an external current source or by an external resistor (RAVR) connected to ground: V AVR I av ( MON ) = 1580 - 5.26 x I AVR = 1580 - 5.26 x ------------- [A] R AVR The extinction ratio in dual-loop operation is determined by the source current (IER) of the ER pin. The current can be sunk by an external current source or by an external resistor V ER I ER 1 (RER) connected to ground: ER = 20 - ----------- = 20 - ------------ x ---------2 A 2 A R ER The average monitor current and the extinction ratio as a function of the IAVR and IER current are illustrated in Figure 6. The average monitor current increases with a decreasing IAVR or increasing RAVR, this allows resistor tuning of RAVR to start at minimum IAVR current level. The formulas used to program AVR and ER are valid for typical conditions; tuning is necessary to achieve good absolute accuracy of AVR and ER values. I av(MON) (A) 1500 ER 15 I ER = 20 - ER 2 A I av(MON) = 1580 - 5.26 x IAVR A 5 30 0 10 15 30 I AVR (A) I ER (A) 295 mgt892 Fig 6. Average monitor current and extinction ratio as a function of IAVR and IER 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 18 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12.1.3 Dual-loop control The dual-loop control measures the monitor current (IMON) corresponding with an optical `one' level and the IMON corresponding with the optical `zero' level. The measured IMON(one) and IMON(zero) are compared with the average monitor current setting and the extinction ratio setting according to: I MON ( one ) + I MON ( zero ) I av ( MON ) = -------------------------------------------------------2 I MON ( one ) ER = ------------------------I MON ( zero ) The dual-loop controls the bias and the modulation current for obtaining the IMON(one) and IMON(zero) current levels which correspond with the programmed AVR and ER settings. Performance of the dual-loop for high data-rate is linked to the quality of the incoming IMON signal: a high performance interconnection between monitor photodiode and MON input is requested for maximum data rate applications (2.7 Gbit/s). The operational area of the dual-loop and the control area of the monitor input current must respect the following equations: 50 A < I MON ( zero ) < 500 A 250 A < I MON ( one ) < 2500 A Stability of ER and AVR settings are guaranteed over a range of temperature and supply voltage variations. 12.1.4 Alarm operating current The alarm threshold Ioper(alarm) on the operating current is determined by the source current IMAXOP of the MAXOP pin. The current range for IMAXOP is from 10 A to 200 A which corresponds with an Ioper(alarm) from 7.5 mA to 150 mA. The IMAXOP current can be sunk by an external current source or by connecting RMAXOP to ground: V MAXOP I oper ( alarm ) = N MAXOP x --------------------R MAXOP The operating current equals the bias current for an AC-coupled laser application and equals the bias current plus half of the modulation current for the DC-coupled laser application: I oper ( TZA3011 A ) = I BIAS I mod I oper ( TZA3011B ) = I BIAS + ---------2 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 19 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12.1.5 Alarm monitor current The alarm threshold IMON(alarm) on the monitor current is determined by the source current IMAXMON of the MAXMON pin. The current range for IMAXMON is from 10 A to 200 A which corresponds with an IMON(alarm) from 150 A to 3000 A. The IMAXMON current can be sunk by an external current source or by connecting RMAXMON to ground: V MAXMON I MON ( alarm ) = N MAXMON x ------------------------R MAXMON 12.1.6 Pulse width adjustment The pulse width adjustment time is determined by the value of resistor RPWA; see Figure 7. R PWA - 10 k t PWA = 200 x ----------------------------------- [ps] R PWA The tPWA range is from -100 ps to +100 ps which corresponds with a RPWA range between a minimum resistance of 6.7 k and a maximum resistance of 20 k. The PWA function is disabled when the PWA input is short-circuited to ground; tPWA equals 0 ps for a disabled PWA function. 100 t PWA (ps) 0 6.7 10 R PWA (k) 20 -100 mgt893 Fig 7. Pulse width adjustment 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 20 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12.2 TZA3011A with dual-loop control A simplified application using the TZA3011A with dual-loop control and with an AC-coupled laser at 3.3 V laser voltage is illustrated in Figure 8. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The alarm threshold on the operating current is made temperature dependent with resistor RVTEMP connected between VTEMP and MAXOP. This alarm detects the end of life of the laser. V MAXOP TC VTEMP x ( T j - 25 C ) I oper ( alarm ) = N MAXOP x -------------------- - R MAXOP- ------------------------------------------------------------R VTEMP The resistor RPWA enables pulse width adjustment for optimizing the eye diagram. 1 32 31 29 28 27 26 25 GND 22 TZA3011A 5 21 6 20 7 19 8 18 9 10 11 ENABLE ALRESET 4 12 13 14 15 16 BIAS GND LA LA LAQ LAQ GND 17 PWA CINQ 23 RREF CIN 3 MAXMON TEST 24 VTEMP DINQ 2 MAXOP DIN laser with monitor diode VCCO MON BIASIN BIASOUT MODIN MODOUT 30 VCCD ALMON 3.3 V VCCA ALOP 3.3 V ER AVR 3.3 V mgt895 Fig 8. TZA3011A with AC-coupled laser and dual-loop control 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 21 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12.3 TZA3011B with dual-loop control A simplified application using the TZA3011B with dual-loop control and with a DC-coupled laser at 3.3 V or 5 V laser voltage is illustrated in Figure 9. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The open-drain outputs ALOP and ALMON are short-circuited with pin ENABLE causing an active alarm to disable the bias and modulation current sources. The ALRESET input will reset the alarm latches and enable normal operation. 1 32 31 29 28 27 26 25 GND 22 TZA3011B 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 4 11 12 13 14 15 16 BIAS GND LA LA LAQ LAQ GND 17 PWA CINQ 23 RREF CIN 3 MAXMON TEST 24 VTEMP DINQ 2 MAXOP DIN laser with monitor diode VCCO MON BIASIN BIASOUT MODIN MODOUT 30 VCCD ALMON 3.3 V VCCA ALOP 3.3 V ER AVR 3.3 V or 5 V mgt894 Fig 9. TZA3011B with DC-coupled laser and dual-loop control 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 22 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 12.4 TZA3011B with average loop control A simplified application using the TZA3011B with average loop control and a DC-coupled laser at 3.3 V or 5 V laser voltage is illustrated in Figure 10. The ER pin is short-circuited to ground for the average loop control. The average power level is determined by the resistor RAVR. The average loop controls the bias current and the BIASOUT output is connected to the BIASIN input. The modulation current is determined by the MODIN input voltage which is generated by the resistor RMODIN and the 100 A source current of the MODIN pin. 1 32 31 29 28 27 26 25 GND 22 TZA3011B 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 4 11 12 13 14 15 16 BIAS GND LA LA LAQ LAQ GND 17 PWA CINQ 23 RREF CIN 3 MAXMON TEST 24 VTEMP DINQ 2 MAXOP DIN laser with monitor diode VCCO MON BIASIN BIASOUT MODIN MODOUT 30 VCCD ALMON 3.3 V VCCA ALOP 3.3 V ER AVR 3.3 V or 5 V mgt896 Fig 10. TZA3011B with DC-coupled laser and average loop control 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 23 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 13. Package outline HBCC32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm x B D b1 SOT560-1 v M C A B w M C ball A1 index area v M C A B w M C b b3 E v M C A B w M C b2 v M C A B w M C detail X x C A e1 B e y v A C e2 E1 e4 1 32 A1 X D1 A2 e3 A 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 b b1 b2 b3 D D1 E E1 e e1 e2 e3 e4 v w x y mm 0.8 0.10 0.05 0.7 0.6 0.35 0.20 0.5 0.3 0.50 0.35 0.50 0.35 5.1 4.9 3.2 3.0 5.1 4.9 3.2 3.0 0.5 4.2 4.2 4.15 4.15 0.2 0.15 0.15 0.05 OUTLINE VERSION SOT560-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 00-02-01 03-03-12 MO-217 Fig 11. Package outline SOT560-1 (HBCC32) 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 24 of 30 Philips Semiconductors TZA3011A; TZA3011B 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 14. Soldering 14.1 Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 14.2 Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 C to 270 C depending on solder paste material. The top-surface temperature of the packages should preferably be kept: * below 225 C (SnPb process) or below 245 C (Pb-free process) - for all BGA, HTSSON..T and SSOP..T packages - for packages with a thickness 2.5 mm - for packages with a thickness < 2.5 mm and a volume 350 mm3 so called thick/large packages. * below 240 C (SnPb process) or below 260 C (Pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times. 14.3 Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 25 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 C or 265 C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 14.4 Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 C and 320 C. 14.5 Package related soldering information Table 9: Suitability of surface mount IC packages for wave and reflow soldering methods Package [1] Soldering method Wave Reflow [2] BGA, HTSSON..T [3], LBGA, LFBGA, SQFP, SSOP..T [3], TFBGA, VFBGA, XSON not suitable suitable DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable [4] suitable PLCC [5], SO, SOJ suitable suitable not recommended [5] [6] suitable SSOP, TSSOP, VSO, VSSOP not recommended [7] suitable CWQCCN..L [8], PMFP [9], WQCCN..L [8] not suitable LQFP, QFP, TQFP [1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips Semiconductors sales office. [2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. [3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 C 10 C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. 9397 750 14437 Product data sheet not suitable (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 26 of 30 Philips Semiconductors TZA3011A; TZA3011B 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers [4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. [5] If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. [6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. [8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request. [9] Hot bar soldering or manual soldering is suitable for PMFP packages. 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 27 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 15. Revision history Table 10: Revision history Document ID Release date Data sheet status TZA3011A_TZA3011B_6 20050120 Product data sheet Modifications: Change notice Doc. number Supersedes - 9397 750 14437 TZA3011A_TZA3011B_5 * The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. * change unit bits/s to bit/s. TZA3011A_TZA3011B_5 20030402 Product specification 9397 750 11282 TZA3011A_TZA3011B_4 TZA3011A_TZA3011B_4 20021106 Product specification 9397 750 10185 TZA3011A_TZA3011B_3 TZA3011A_TZA3011B_3 20020523 Preliminary specification 9397 750 09671 TZA3011A_TZA3011B_2 TZA3011A_TZA3011B_2 20020312 Preliminary specification 9397 750 09231 TZA3011A_B_1 TZA3011A_B_1 9397 750 07764 - 20010129 Objective specification 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 28 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 16. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Bare die -- All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. 19. Trademarks A-Rate -- is a trademark of Koninklijke Philips Electronics N.V. 20. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14437 Product data sheet (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 -- 20 January 2005 29 of 30 TZA3011A; TZA3011B Philips Semiconductors 30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers 21. Contents 1 2 2.1 2.2 2.3 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 8 9 10 11 12 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.1.5 12.1.6 12.2 12.3 12.4 13 14 14.1 14.2 14.3 14.4 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Control features . . . . . . . . . . . . . . . . . . . . . . . . 2 Protection features . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 Functional description . . . . . . . . . . . . . . . . . . . 8 Data and clock input . . . . . . . . . . . . . . . . . . . . . 8 Retiming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Pulse width adjustment. . . . . . . . . . . . . . . . . . . 9 Modulator output stage . . . . . . . . . . . . . . . . . . . 9 Dual-loop control. . . . . . . . . . . . . . . . . . . . . . . . 9 Average loop control . . . . . . . . . . . . . . . . . . . . 10 Direct current setting. . . . . . . . . . . . . . . . . . . . 10 Soft start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Alarm functions. . . . . . . . . . . . . . . . . . . . . . . . 10 Enable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reference block . . . . . . . . . . . . . . . . . . . . . . . 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal characteristics. . . . . . . . . . . . . . . . . . 12 Static characteristics. . . . . . . . . . . . . . . . . . . . 12 Dynamic characteristics . . . . . . . . . . . . . . . . . 16 Application information. . . . . . . . . . . . . . . . . . 17 Design equations . . . . . . . . . . . . . . . . . . . . . . 17 Bias and modulation currents . . . . . . . . . . . . . 17 Average monitor current and extinction ratio . 18 Dual-loop control. . . . . . . . . . . . . . . . . . . . . . . 19 Alarm operating current . . . . . . . . . . . . . . . . . 19 Alarm monitor current . . . . . . . . . . . . . . . . . . . 20 Pulse width adjustment. . . . . . . . . . . . . . . . . . 20 TZA3011A with dual-loop control . . . . . . . . . . 21 TZA3011B with dual-loop control . . . . . . . . . . 22 TZA3011B with average loop control . . . . . . . 23 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 24 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 25 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 25 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 26 14.5 15 16 17 18 19 20 Package related soldering information . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Data sheet status. . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . 26 28 29 29 29 29 29 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 January 2005 Document number: 9397 750 14437 Published in The Netherlands