1. General description
The TZA3011 is a fully integrated laser driver for optical transmission systems with data
rates up to 3.2 Gbit/s. The TZA3011 incorporates all the necessary control and protection
functions for a laser driver application with very few external components required and low
power dissipation. The dual-loop controls the average monitor current in a programmable
range from 150 µAto1300µA and the extinction ratio in a programmable range from
5 to 15 (linear scale).
The design is made in the Philips BiCMOS RF process and is available in a HBCC32
package or as bare die. The TZA3011A is intended for use in an application with an
AC-coupled laser diode with a 3.3 V laser supply voltage. The TZA3011B is intended for
use in an application with a DC-coupled laser diode for both 3.3 V and 5 V laser supply
voltages.
2. Features
2.1 General
■A-rate™ from 30 Mbit/s to 3.2 Gbit/s
■Bias current up to 100 mA
■Modulation current up to 100 mA
■Rise and fall times typical 80 ps
■Jitter below 20 ps (peak-to-peak value)
■Modulation output voltage up to 2 V dynamic range
■1.2 V minimum voltage on the modulation output pin and 0.4 V minimum voltage on
pin BIAS
■Retiming function via external clock with disable option
■Pulse width adjustment function with disable option
■Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic
(LVPECL) and Current-Mode Logic (CML) compatible data and clock inputs
■Internal common mode voltage available for AC-coupled data and clock inputs and for
single-ended applications
■3.3 V supply voltage
■TZA3011A: AC-coupled laser for 3.3 V laser supply
■TZA3011B: DC-coupled laser for 3.3 V and 5 V laser supply
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
Rev. 06 — 20 January 2005 Product data sheet
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 2 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
2.2 Control features
■Dual-loop control for constant and accurate optical average power level and extinction
ratio (up to 2.7 Gbit/s)
■Optional average power loop control (up to 3.2 Gbit/s)
■Optional direct setting of modulation and bias currents
2.3 Protection features
■Alarm function on operating current
■Alarm function on monitor current
■Enable function on bias and modulation currents
■Soft start on bias and modulation currents
3. Applications
■SDH/SONET optical transmission systems
■High current drivers for converters
■High current drivers for high frequencies
4. Ordering information
Table 1: Ordering information
Type number Package
Name Description Version
TZA3011AVH HBCC32 plastic thermal enhanced bottom chip carrier;
32 terminals; body 5 ×5×0.65 mm SOT560-1
TZA3011BVH
TZA3011UH - bare die; 2560 ×2510 ×380 µm-
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 3 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
5. Block diagram
The numbers in parenthesis refer to the bare die version.
Fig 1. Block diagram
mgt888
100
Ω100
Ω
20
kΩ
20
kΩ
100
Ω
3 (5)
(44, 45) 25
(43) 24
(40, 41) 22
(37, 39) 21
(31, 32) 20
(29, 30) 19
DIN
VCCO
BIAS
GND
LA
LA
LAQ
LAQ
GND
PWA
RREFMAXMONVTEMPMAXOPALMONALOP
4 (6)
D
C
DINQ
20
kΩ
20
kΩ
10
kΩ
100
Ω
6 (12)
VCCD − 1.32 V
5 (11)
CIN
TEST
2 (3, 4)
VCCD
1 (1, 2)
VCCA
8
GND
(14, 47)
GNDESD
(7, 8,
9, 10)
GNDRF
9 (15)
10 (16)
ENABLE
R
Q
ALRESET
1.4 V
3.3 V
enable
Imod/1500
disable retiming:
VCIN, VCINQ < 0.3 V
IBIAS/750 Iav(MON)/12.5
20
kΩ
1.4 V
7 (13)
CINQ
CONTROL BLOCK
CURRENT
CONVERSION
AVR ER MODOUT MODIN BIASOUT BIASIN MON
Ione
IMON
Imod
IBIAS
Izero
dual loop: IER = 1.2 V/RER
average loop: ER = GND
MUX
FF
PULSE
WIDTH
ADJUST
ALARM
OPERATING
CURRENT
PRE
AMP
TZA3011A
TZA3011B
POST
AMP
V/I
100
mA/V
100
mA/V
R
Q
ALARM
MONITOR
CURRENT
V AND I
REFERENCE
+
23
18
(27) 17
16 (25)15 (24)14 (23)13 (21)12 (19)11 (18)
30 (55)31 (56)
GNDCCB
(51, 53)
ACDC
(46)32 (57) 29 (52) 28 (50) 27 (49) 26 (48)
GNDO
(28, 33,
35, 36, 42)
i.c.
(20, 22,
34, 38, 54)
GNDRF
(26)
GNDDFT
(17)
V/I
100 µA
100 µA
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 4 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
6. Pinning information
6.1 Pinning
Fig 2. Pin configuration TZA3011A and TZA3011B
TZA3011AVH
TZA3011BVH
Transparent top view
VCCA
AVR
ER
MODOUT
MODIN
BIASOUT
BIASIN
MON
ENABLE
ALOP
ALMON
MAXOP
VTEMP
MAXMON
RREF
VCCD
DIN
DINQ
TEST
CIN
CINQ
GND
ALRESET
VCCO
BIAS
GND
LA
LA
LAQ
LAQ
GND
PWA
001aac295
2
1
3
4
5
6
7
8
9
24
25
23
22
21
20
19
18
17
32
31
30
29
28
27
26
10
11
12
13
14
15
16
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 5 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
6.2 Pin description
Fig 3. Bonding pad location TZA3011UH
57 56 55 53 51 50 49 48 47 46
45
44
43
42
41
40
39
37
38
54
mgu553
TZA3011UH
x
y
0
0
2.56 mm
2.51
mm
52
36
35
33
32
31
30
29
28
27
VCCO
VCCO
BIAS
GNDO
LA
LA
LA
LA
i.c.
i.c.
i.c. i.c.
i.c.
GNDO
GNDO
GNDO
LAQ
LAQ
LAQ
LAQ
GNDO
PWA
2625242321
22
1918
20
1716
ENABLE AVR
ER
MODOUT
GNDCCB
MODIN
GNDCCB
BIASOUT
BIASIN
MON
GNDESD
ACDC
GNDDFT
ALOP
ALMON
MAXOP
VTEMP
MAXMON
RREF
GNDRF
15
14
13
12
10
11
9
8
7
6
5
4
3
2
1
ALRESET
GNDESD
CINQ
CIN
GNDRF
TEST
GNDRF
GNDRF
GNDRF
DINQ
DIN
VCCD
VCCD
VCCA
VCCA
34
Table 2: Pin description TZA3011A and TZA3011B
Symbol Pin Description
GND die pad common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be
connected to ground
VCCA 1 analog supply voltage
VCCD 2 digital supply voltage
DIN 3 non-inverted data input (RF input)
DINQ 4 inverted data input (RF input)
TEST 5 test pin or test pad; must be connected to ground
CIN 6 non-inverted clock input (RF input)
CINQ 7 inverted clock input (RF input)
GND 8 ground
ALRESET 9 alarm reset input; resets ALMON and ALOP alarms
ENABLE 10 enable input for modulation and bias current
ALOP 11 alarm output on operating current (open-drain)
ALMON 12 alarm output on monitor diode current (open-drain)
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 6 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
MAXOP 13 threshold level input for alarm on operating current
VTEMP 14 temperature dependent voltage output source
MAXMON 15 threshold level input for alarm on monitor diode current
RREF 16 reference current input; must be connected to ground with an accurate
(1 %) 10 kΩ resistor
PWA 17 pulse width adjustment input
GND 18 ground
LAQ 19 inverted laser modulation output (RF output); output for dummy load
LAQ 20 inverted laser modulation output (RF output); output for dummy load
LA 21 non-inverted laser modulation output (RF output); output for laser
LA 22 non-inverted laser modulation output (RF output); output for laser
GND 23 ground
BIAS 24 current source output for the laser bias current
VCCO 25 supply voltage for the output stage and the laser diode
MON 26 input for the monitor photodiode (RF input)
BIASIN 27 input for the bias current setting
BIASOUT 28 output of the control block for the bias current
MODIN 29 input for the modulation current setting
MODOUT 30 output of the control block for the modulation current
ER 31 input for the optical extinction ratio setting
AVR 32 input for the optical average power level setting
Table 3: Bonding pad description TZA3011UH[1]
Symbol Pad X Y Description
GND substrate - - common ground plane for VCCA, VCCD, VCCO, RF
and I/O; must be connected to ground
VCCA 1−1123.9 +1029.3 analog supply voltage
VCCA 2−1123.9 +949.3 analog supply voltage
VCCD 3−1123.9 +844.3 digital supply voltage
VCCD 4−1123.9 +764.3 digital supply voltage
DIN 5 −1124.0 +604.3 non-inverted data input (RF input)
DINQ 6 −1124.9 +393.3 inverted data input (RF input)
GNDRF 7 −1123.9 +244.5 ground
GNDRF 8 −1123.9 +139.4 ground
GNDRF 9 −1123.9 +4.7 ground
GNDRF 10 −1123.9 −100.3 ground
TEST 11 −1123.4 −253.4 test pin or test pad; must be connected to ground
CIN 12 −1123.9 −441.2 non-inverted clock input (RF input)
CINQ 13 −1123.9 −697.1 inverted clock input (RF input)
GNDESD 14 −1123.9 −850.8 ground
ALRESET 15 −1123.9 −991.4 alarm reset input; resets ALMON and ALOP
alarms
Table 2: Pin description TZA3011A and TZA3011B
…continued
Symbol Pin Description
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 7 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
ENABLE 16 −829.8 −1123.7 enable input for modulation and bias current
GNDDFT 17 −665.6 −1124.0 ground
ALOP 18 −504.9 −1124 alarm output on operating current (open-drain)
ALMON 19 −267.6 −1124.3 alarm output on monitor diode current
(open-drain)
i.c. 20[2] −221.5 −344.4 internally connected
MAXOP 21 −98.5 −1124.3 threshold level input for alarm on operating current
i.c. 22[2] −48.6 −368.4 internally connected
VTEMP 23 +294.0 −1124.2 temperature dependent voltage output source
MAXMON 24 +466.9 −1124.2 threshold level input for alarm on monitor diode
current
RREF 25 +694.9 −1124.0 reference current input; must be connected to
ground with an accurate (1 %) 10 kΩ resistor
GNDRF 26 +860.3 −1124.0 ground
PWA 27 +1098.9 −979.4 pulse width adjustment input
GNDO 28 +1099.0 −829.7 ground
LAQ 29 +1099.0 −691.2 inverted laser modulation output (RF output);
output for dummy load
LAQ 30 +1099.0 −611.2 inverted laser modulation output (RF output);
output for dummy load
LAQ 31 +1099.0 −506.4 inverted laser modulation output (RF output);
output for dummy load
LAQ 32 +1099.0 −426.4 inverted laser modulation output (RF output);
output for dummy load
GNDO 33 +1099.8 −247.0 ground
i.c. 34[2] +839.0 −194.4 internally connected
GNDO 35 +1099.8 −142.0 ground
GNDO 36 +1099.8 −36.8 ground
LA 37 1099.1 105.4 non-inverted laser modulation output (RF output);
output for laser
i.c. 38[2] 839.0 179.6 internally connected
LA 39 1099.1 185.4 non-inverted laser modulation output (RF output);
output for laser
LA 40 1099.1 290.5 non-inverted laser modulation output (RF output);
output for laser
LA 41 1099.1 370.5 non-inverted laser modulation output (RF output);
output for laser
GNDO 42 1099.1 670.8 ground
BIAS 43 1099.0 804.8 current source output for the laser bias current
VCCO 44 1099.0 944.4 supply voltage for the output stage and the laser
diode
VCCO 45 1099.0 1024.4 supply voltage for the output stage and the laser
diode
ACDC 46[3] 942.5 1124.3 AC or DC coupled laser
Table 3: Bonding pad description TZA3011UH[1]
…continued
Symbol Pad X Y Description
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 8 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
[1] All GND connections should be used.
All ground pads must be connected to ground.
Recommended order of bonding: all GND first, then VCCA,VCCD and VCCO supplies and finally the input and
output pins.
All coordinates are referenced, in µm, to the center of the die.
[2] Pad is internally connected, do not use.
[3] ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect
this pad to ground.
7. Functional description
7.1 Data and clock input
The TZA3011 operates with differential Positive Emitter Coupled Logic (PECL), Low
Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data
and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the
data and clock inputs carry a complementary signal with the specified peak-to-peak value
(true differential excitation).
GNDESD 47 765.0 1123.8 ground
MON 48 602.1 1123.7 input for the monitor photodiode (RF input)
BIASIN 49 431.7 1123.8 input for the bias current setting
BIASOUT 50 267.6 1123.8 output of the control block for the bias current
GNDCCB 51 100.8 1123.8 ground
MODIN 52 −82.7 +1123.8 input for the modulation current setting
GNDCCB 53 −241.1 +1123.8 ground
i.c. 54[2] −274.4 +954.4 internally connected
MODOUT 55 −487.2 +1123.8 output of the control block for the modulation
current
ER 56 −645.6 +1123.8 input for the optical extinction ratio setting
AVR 57 −802.8 +1123.8 input for the optical average power level setting
Table 4: Physical characteristics of TZA3011UH
Parameter Value
Glass passivation 0.3 µm PSG (Phospho Silicate Glass) on top of 0.8 µm of silicon nitride
Bonding pad dimension minimum dimension of exposed metallization is 80 µm×80 µm (pad
size = 90 µm×90 µm)
Metallization 2.8 µm AlCu
Thickness 380 µm nominal
Size 2.560 mm ×2.510 mm (6.43 mm2)
Backing silicon; electrically connected to GND potential through substrate
contacts
Attach temperature < 440 °C; recommended die attachment is by gluing
Attach time < 15 s
Table 3: Bonding pad description TZA3011UH[1]
…continued
Symbol Pad X Y Description
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 9 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
The circuit generates an internal common mode voltage for AC-coupled data and clock
inputs and for single-ended applications.
If VDIN >V
DINQ, the modulation current is sunk by the LA pins and corresponds to an
optical ‘one’ level of the laser.
7.2 Retiming
The retiming function synchronizes the data with the clock to improve the jitter
performance. The data latch switches on the rising edge of the clock input. The retiming
function is disabled when both clock inputs are below 0.3 V.
At start-up the initial polarity of the laser is unknown before the first rising edge of the
clock input.
7.3 Pulse width adjustment
The on-duration of the laser current can be adjusted from −100 ps to +100 ps. The
adjustment time is set by resistor RPWA. The maximum allowable capacitive load on pin
PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to
ground.
7.4 Modulator output stage
The output stage is a high-speed bipolar differential pair with typical rise and fall times of
80 ps and with a modulation current source of up to 100 mA when the LA pins are
connected to VCCO.
The modulation current switches between the LA and LAQ outputs. For a good RF
performance the inactive branch carries a small amount of the modulation current.
The LA output is optimized for the laser allowing a 2 V dynamic range and a 1.2 V
minimum voltage. The LAQ output is optimized for the dummy load.
The output stage of the TZA3011A is optimized for AC-coupled lasers and the output
stage of the TZA3011B is optimized for DC-coupled lasers.
The BIAS output is optimized for low voltage requirements (0.4 V minimum for a 3.3 V
laser supply; 0.8 V minimum for a 5 V laser supply).
7.5 Dual-loop control
The TZA3011 incorporates a dual-loop control for a constant, accurate and
temperature-independent control of the optical average power level and the extinction
ratio. The dual-loop guarantees constant optical ‘one’ and ‘zero’ levels which are
independent of the laser temperature and the laser age.
The dual-loop operates by monitoring the current of the monitor photodiode which is
directly proportional to the laser emission. The ‘one’ and ‘zero’ current levels of the
monitor diode are captured by the detector of the dual-loop control. The pin MON for the
monitor photodiode current is an RF input.
The average monitor current is programmable over a wide current range from 150 µA
to 1300 µA for both the dual-loop control and the average loop control. The extinction ratio
is programmable from 5 to 15.
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 10 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
The maximum allowable capacitive load on pins AVR, ER, BIASOUT and MODOUT is
100 pF.
7.6 Average loop control
The average power control loop maintains a constant average power level of the monitor
current over temperature and lifetime of the laser. The average loop control is activated by
short-circuiting pin ER to ground.
7.7 Direct current setting
The TZA3011 can also operate in open-loop mode with direct setting of the bias and
modulation currents. The bias and modulation current sources are transconductance
amplifiers and the output currents are determined by the BIASIN and MODIN voltages
respectively. The bias current source has a bipolar output stage with minimum output
capacitance for optimum RF performance.
7.8 Soft start
At power-up the bias and modulation current sources are released when VCCA > 2.7 V
and the reference voltage has reached the correct value of 1.2 V.
The control loop starts with minimum bias and modulation current at power-up and when
the device is enabled. The current levels increase until the MON input current matches the
programmed average level and, in the case of dual-loop control, the extinction ratio.
7.9 Alarm functions
The TZA3011 features two alarm functions for the detection of excessive laser operating
current and monitor diode current due to laser ageing, laser malfunctioning or a too high
laser temperature. The alarm threshold levels are programmed by a resistor or a current
source. In the TZA3011A, for the AC-coupled application, the operating current is equal to
the bias current. In the TZA3011B, for the DC-coupled application, the operating current
equals the bias current plus half of the modulation current.
7.10 Enable
A LOW-level on the enable input disables the bias and modulation current sources: the
laser is off. A HIGH-level on the enable input or an open enable input switches both
current sources on: the laser is operational.
7.11 Reference block
The reference voltage is derived from a band gap circuit and is available at pin RREF. An
accurate (1 %) 10 kΩ resistor has to be connected to pin RREF to provide the internal
reference current. The maximum capacitive load on pin RREF is 100 pF.
The reference voltage on the setting pins (MAXOP, MAXMON, PWA, ER and AVR) is
buffered and derived from the band gap voltage.
The output voltage on pin VTEMP reflects the junction temperature of the TZA3011, the
temperature coefficient of VVTEMP equals −2.2 mV/K.
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 11 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
8. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced
to ground; positive currents flow into the IC.
Symbol Parameter Conditions Min Max Unit
VCCD digital supply voltage −0.5 +3.5 V
VCCA analog supply voltage −0.5 +3.5 V
VCCO output stage supply voltage 3.3 V laser supply −0.5 +3.5 V
5 V laser supply
(TZA3011B only) −0.5 +5.3 V
Vo(LA) output voltage at pin LA TZA3011A;
VCCO = 3.3 V 1.2 4.5 V
TZA3011B;
VCCO = 3.3 V 0.8 4.1 V
TZA3011B;
VCCO =5V 1.2 4.5 V
Vo(LAQ) output voltage at pin LAQ TZA3011A;
VCCO = 3.3 V 1.8 4.5 V
TZA3011B;
VCCO = 3.3 V 1.6 4.5 V
TZA3011B;
VCCO =5V 2.0 5.2 V
VBIAS bias voltage TZA3011A;
VCCO = 3.3 V 0.4 3.6 V
TZA3011B;
VCCO = 3.3 V 0.4 3.6 V
TZA3011B;
VCCO =5V 0.8 4.1 V
Vnvoltage on other input and
output pins
analog inputs and outputs −0.5 VCCA +
0.5 V
digital inputs and outputs −0.5 VCCD +
0.5 V
Ininput current on pins
MAXOP, MAXMON,
RREF, PWA, ER and AVR −1.0 0 mA
VTEMP, BIASOUT and
MODOUT −1.0 +1.0 mA
ALOP, ALMON and MON 0 5.0 mA
Tamb ambient temperature −40 +85 °C
Tjjunction temperature −40 +125 °C
Tstg storage temperature −65 +150 °C
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 12 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
9. Thermal characteristics
10. Static characteristics
Table 6: Thermal characteristics
In compliance with JEDEC standards JESD51-5 and JESD51-7.
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance
from junction to
ambient
4 layer printed circuit board in still air with 9 plated vias connected with
the heatsink and the first ground plane in the printed circuit board 35 K/W
HBCC32 die pad soldered to printed circuit board 60 K/W
Table 7: Characteristics
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supplies: pins VCCA,V
CCD and VCCO
VCCA analog supply voltage 3.14 3.3 3.47 V
VCCD digital supply voltage 3.14 3.3 3.47 V
VCCO RF output supply voltage 3.3 V laser supply 3.14 3.3 3.47 V
5 V laser supply 4.75 5.0 5.25 V
ICCA analog supply current 30 40 50 mA
ICCD digital supply current 35 45 55 mA
ICCO RF output supply current pins LA and LAQ open-circuit
3.3 V laser supply 8 15 25 mA
5 V laser supply - 20 - mA
Pcore core power dissipation core excluding output currents Io(LA),
Io(LAQ) and IBIAS; PWA and retiming
off
- 264 - mW
Ptot total power dissipation VBIAS = 3.3 V; IBIAS =20mA;
Imod =16mA [1] 330 400 500 mW
Data and clock inputs: pins DIN and CIN
Vi(p-p) input voltage swing
(peak-to-peak value) Vi(DIN) =(V
CCD −2V)toV
CCD;
Vi(CIN) =(V
CCD −2V)toV
CCD
100 - 1000 mV
Vint(cm) internal common mode
voltage AC-coupled inputs - VCCD −1.32 - V
VIO input offset voltage [2] −10 0 +10 mV
Zi(dif) differential input impedance 80 100 125 Ω
Zi(cm) common mode input
impedance 810 13kΩ
Vi(CIN)(dis) input voltage for disabled
retiming VCIN =V
CINQ - - 0.3 V
Monitor photodiode input: pin MON
Vi(MON) input voltage IMON =50µA to 2500 µA 0.9 1.1 1.3 V
Zi(MON) input impedance IMON = 50 µA to 2500 µA - 27 - Ω
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 13 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
Extinction ratio setting for dual-loop control: pins MON and ER
ERmin low extinction ratio setting dual-loop set-up; IER > −30 µA[3]
linear scale - 5 7
dB scale - 7 8.5 dB
ERmax high extinction ratio setting dual-loop set-up; IER < −10 µA[3]
linear scale 13 15 -
dB scale 11 11.8 - dB
ERacc relative accuracy of ER temperature and VCCA variations;
ER = 10; AVR = 550 µA−10 - +10 %
Vref(ER) reference voltage on
pin ER IER =−35 µA to −5µA; CER < 100 pF 1.15 1.20 1.25 V
IER current sink on pin ER −35 - −5µA
Average setting for dual-loop control and average loop control: pins MON and AVR
Iav(MON)(low) low average monitor
current setting IAVR >−280 µA
dual-loop (ER = 5) - - 150 µA
average loop (pin ER to GND) - - 150 µA
Iav(MON)(max) maximum average monitor
current setting IAVR =−15.0 µA
dual-loop (ER = 5) 1200 1300 - µA
average loop (pin ER to GND) 1200 1300 - µA
∆Iav(MON) relative accuracy of
average current on
pin MON
temperature and VCCA variations;
ER = 10; AVR = 550 µA−10 - +10 %
Vref(AVR) reference voltage on
pin AVR IAVR =−250 µA to −15 µA;
CAVR < 100 pF 1.15 1.20 1.25 V
Isink(AVR) current sink on pin AVR −280 - −15 µA
Control loop modulation output: pin MODOUT
Isource(MODOUT) source current VMODOUT = 0.5 V to 1.5 V;
CMODOUT < 100 pF -- −200 µA
Isink(MODOUT) sink current VMODOUT = 0.5 V to 1.5 V;
CMODOUT < 100 pF 200 - - µA
Control loop bias output: pin BIASOUT
Isource(BIASOUT) source current VBIASOUT = 0.5 V to 1.5 V;
CBIASOUT < 100 pF -- −200 µA
Isink(BIASOUT) sink current VBIASOUT = 0.5 V to 1.5 V;
CBIASOUT < 100 pF 200 - - µA
Bias current source: pins BIASIN and BIAS
gm(bias) bias transconductance VBIASIN = 0.5 V to 1.5 V
VBIAS =V
CCO = 3.3 V 90 110 125 mA/V
VBIAS = 4.1 V; VCCO = 5.0 V 95 110 130 mA/V
Isource(BIASIN) source current at
pin BIASIN VBIASIN = 0.5 V to 1.5 V −110 −100 −95 µA
Table 7: Characteristics
…continued
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 14 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
IBIAS(max) maximum bias current VBIASIN = 1.8 V 100 - - mA
IBIAS(min) minimum bias current VBIASIN = 0 V to 0.4 V - 0.2 0.4 mA
IBIAS(dis) bias current at disable VENABLE < 0.8 V - - 30 µA
VBIAS output voltage on pin BIAS normal operation
VCCO = 3.3 V 0.4 - 3.6 V
VCCO = 5 V 0.8 - 4.1 V
Modulation current source: pin MODIN
gm(mod) modulation
transconductance VMODIN = 0.5 V to 1.5 V
VLA =V
LAQ =V
CCO = 3.3 V 78 90 105 mA/V
VLA =V
LAQ =V
CCO = 4.5 V 80 95 110 mA/V
Isource(MODIN) source current at
pin MODIN VMODIN = 0.5 V to 1.5 V −110 −100 −95 µA
Modulation current outputs: pins LA
Io(LA)(max)(on) maximum laser modulation
output current at LA on VMODIN = 1.8 V; VLA =V
CCO = 3.3 V [4] 100 - - mA
Io(LA)(min)(on) minimum laser modulation
output current at LA on VMODIN = 0 V to 0.4 V;
VLA =V
CCO = 3.3 V [4] -5 6mA
Io(LA)(min)(off) minimum laser modulation
output current at LA off VLA =V
CCO = 3.3 V [4]
VMODIN = 0.5 V - - 0.8 mA
VMODIN = 1.5 V - - 2 mA
Zo(LA), Zo(LAQ) output impedance LA and
LAQ pins 80 100 125 Ω
Io(LA)(dis),
Io(LAQ)(dis)
non-inverted and inverted
laser modulation output
current at disable
VENABLE < 0.8 V - - 200 µA
Vo(LA)min minimum output voltage at
pin LA TZA3011A; VCCO = 3.3 V 1.6 - - V
TZA3011B; VCCO = 3.3 V 1.2 - - V
TZA3011B; VCCO = 5 V 1.6 - - V
Enable function: pin ENABLE
VIL LOW-level input voltage bias and modulation currents
disabled - - 0.8 V
VIH HIGH-level input voltage bias and modulation currents enabled 2.0 - - V
Rpu(int) internal pull-up resistance 16 20 30 kΩ
Alarm reset: pin ALRESET
VIL LOW-level input voltage no reset - - 0.8 V
VIH HIGH-level input voltage reset 2.0 - - V
Rpd(int) internal pull-down
resistance 710 15kΩ
Table 7: Characteristics
…continued
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 15 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
[1] The total power dissipation Ptot is calculated with VBIAS =V
CCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS will be VCCO minus
the laser diode voltage which results in a lower total power dissipation.
[2] The specification of the offset voltage is guaranteed by design.
[3] Any (AVR, ER) settings need to respect IMON >50µA and IMON < 2500 µA. Therefore, for large ER settings, minimum/maximum AVR
cannot be reached.
[4] The relation between the sink current Io(LA) and the modulation current Imod is: where ZL(LA) is the
external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current is divided between ZL(LA) and
the 100 Ω internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical ZL(LA) of 25 Ω will
result in an Io(LA) current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real
application load.
[5] VVTEMP = 1.31 + TCVTEMP × Tj and Tj=T
amb +P
tot ×Rth(j-a).
Alarm operating current: pins MAXOP and ALOP
Vref(MAXOP) reference voltage on
pin MAXOP IMAXOP =10µA to 200 µA 1.15 1.2 1.25 V
NMAXOP ratio of Ioper(alarm) and
IMAXOP
Ioper(alarm) = 7.5 mA to 150 mA
VCCO = 3.3 V 700 800 900
VCCO = 5.0 V 750 850 950
VD(ALOP)L drain voltage at active
alarm IALOP = 500 µA 0 - 0.4 V
Alarm monitor current: pins MAXMON and ALMON
Vref(MAXMON) reference voltage on
pin MAXMON IMAXMON =10µA to 200 µA 1.15 1.2 1.25 V
NMAXMON ratio of IMON(alarm) and
IMAXMON
IMON(alarm) = 150 µA to 3000 µA101520
VD(ALMON)L drain voltage at active
alarm IALMON = 500 µA 0 - 0.4 V
Reference block: pins RREF and VTEMP
VRREF reference voltage RRREF =10kΩ (1 %);
CRREF < 100 pF 1.15 1.20 1.25 V
VVTEMP temperature dependent
voltage Tj=25°C; CVTEMP <2nF [5] 1.15 1.20 1.25 V
TCVTEMP temperature coefficient of
VVTEMP
Tj=−25 °C to +125 °C[5] -−2.2 - mV/K
Isource(VTEMP) source current of
pin VTEMP -- −1mA
Isink(VTEMP) sink current of pin VTEMP 1 - - mA
Table 7: Characteristics
…continued
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IoLA() Imod 100
100 ZLLA()
+
-------------------------------
×=
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 16 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
11. Dynamic characteristics
[1] The output jitter specification is guaranteed by design.
[2] With a 25 Ω load on the LA pins: Io(LA) = 14 mA when Imod = 17 mA.
[3] For high modulation current, tr and tf are impacted by total inductance between the LA pins and the laser connection.
Table 8: Characteristics
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
RF path
BR bit rate dual-loop control 0.03 - 2.7 Gbit/s
average loop control 0.03 - 3.2 Gbit/s
JLA(p-p) jitter of pin LA output signal
(peak-to-peak value) RL=25Ω[1] --20ps
trrise time of voltage on pin LA 20 % to 80 %; RL=25Ω;
Imod =17mA [2] [3] 70 85 110 ps
tffall time of voltage on pin LA 80 % to 20 %; RL=25Ω;
Imod =17mA [2] [3] 50 70 100 ps
tsu(D) data input set-up time 60 - - ps
th(D) data input hold time 60 - - ps
ten(start) start-up time at enable direct current setting - - 1 µs
Current control
tcint internal time constant dual-loop control operating
currents fully settled 30--ms
Pulse width adjustment
tPWA(min) minimum pulse width adjustment
on pins LA RPWA = 6.7 kΩ; CPWA < 100 pF - - −100 ps
tPWA pulse width adjustment on
pins LA RPWA =10kΩ; CPWA < 100 pF - 0 - ps
tPWA(max) maximum pulse width adjustment
on pins LA RPWA =20kΩ; CPWA < 100 pF 80 100 - ps
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 17 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12. Application information
12.1 Design equations
12.1.1 Bias and modulation currents
The bias and modulation currents are determined by the voltages on pins BIASIN and
MODIN. These voltages are applied by pins BIASOUT and MODOUT for dual-loop
control. For average loop control the BIASIN voltage is applied by pin BIASOUT and the
MODIN voltage is applied by an external voltage source or an external resistor RMODIN.
For direct setting of bias and the modulation current, the BIASIN and MODIN voltages
have to be applied by external voltage sources or by RBIASIN and RMODIN external resistors
connected on pins BIASIN and MODIN:
IBIAS =(R
BIASIN ×100 µA−0.5 V) ×gm(bias) [mA]
Imod =(R
MODIN ×100 µA−0.5 V) ×gm(mod) + 5 [mA]
The bias and modulation current sources operate with an input voltage range from 0.5 V
to 1.5 V. The output current is at its minimum level for an input voltage below 0.4 V;
see Figure 4 and Figure 5.
The bias and modulation current sources are temperature compensated and the adjusted
current level remains stable over the temperature range.
The bias and modulation currents increase with increasing resistor values for RBIASIN and
RMODIN respectively, this allows resistor tuning to start at a minimum current level.
LA current when LA output is on.
Vo(LA) =V
CCO.
Fig 4. Bias current as a function of BIASIN voltage Fig 5. Modulation current as a function of MODIN
voltage
mgt890
VBIASIN (V)
IBIAS
(mA)
IBIAS(min)
gm(bias) =
110 mA/V
0
110
0.2 0.5 1.5
mgt891
VMODIN (V)
Imod = Io(LA)
(mA)
Io(LA)(min)
gm(mod) =
100 mA/V
0
105
5
0.5 1.5
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 18 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12.1.2 Average monitor current and extinction ratio
The average monitor current Iav(MON) in dual-loop or average loop operation is determined
by the source current (IAVR) of the AVR pin. The current can be sunk by an external
current source or by an external resistor (RAVR) connected to ground:
[µA]
The extinction ratio in dual-loop operation is determined by the source current (IER)ofthe
ER pin. The current can be sunk by an external current source or by an external resistor
(RER) connected to ground:
The average monitor current and the extinction ratio as a function of the IAVR and IER
current are illustrated in Figure 6.
The average monitor current increases with a decreasing IAVR or increasing RAVR, this
allows resistor tuning of RAVR to start at minimum IAVR current level.
The formulas used to program AVR and ER are valid for typical conditions; tuning is
necessary to achieve good absolute accuracy of AVR and ER values.
Fig 6. Average monitor current and extinction ratio as a function of IAVR and IER
Iav MON()
1580 5.26–IAVR
×1580 5.26–VAVR
RAVR
-------------
×==
ER 20 IER
2µA
------------
–20 1
2µA
------------
–VER
RER
----------
×==
mgt892
IAVR (µA)
IER (µA)
Iav(MON)
(µA)
Iav(MON) = 1580 − 5.26 × IAVR µA
1500
ER
ER = 20 − IER
2 µA
30
02953015
15
5
10
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 19 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12.1.3 Dual-loop control
The dual-loop control measures the monitor current (IMON) corresponding with an optical
‘one’ level and the IMON corresponding with the optical ‘zero’ level. The measured IMON(one)
and IMON(zero) are compared with the average monitor current setting and the extinction
ratio setting according to:
The dual-loop controls the bias and the modulation current for obtaining the IMON(one) and
IMON(zero) current levels which correspond with the programmed AVR and ER settings.
Performance of the dual-loop for high data-rate is linked to the quality of the incoming
IMON signal: a high performance interconnection between monitor photodiode and MON
input is requested for maximum data rate applications (2.7 Gbit/s).
The operational area of the dual-loop and the control area of the monitor input current
must respect the following equations:
Stability of ER and AVR settings are guaranteed over a range of temperature and supply
voltage variations.
12.1.4 Alarm operating current
The alarm threshold Ioper(alarm) on the operating current is determined by the source
current IMAXOP of the MAXOP pin. The current range for IMAXOP is from 10 µA to 200 µA
which corresponds with an Ioper(alarm) from 7.5 mA to 150 mA. The IMAXOP current can be
sunk by an external current source or by connecting RMAXOP to ground:
The operating current equals the bias current for an AC-coupled laser application and
equals the bias current plus half of the modulation current for the DC-coupled laser
application:
Iav MON()
IMON one()
IMON zero()
+
2
---------------------------------------------------------
=
ER IMON one()
IMON zero()
--------------------------
=
50 µAI
MON zero()
500 µA<<
250 µAI
MON one()
2500 µA<<
Ioper alarm()
NMAXOP VMAXOP
RMAXOP
---------------------
×=
Ioper TZA3011A()
IBIAS
=
Ioper TZA3011B()
IBIAS Imod
2
-----------
+=
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 20 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12.1.5 Alarm monitor current
The alarm threshold IMON(alarm) on the monitor current is determined by the source current
IMAXMON of the MAXMON pin. The current range for IMAXMON is from 10 µA to 200 µA
which corresponds with an IMON(alarm) from 150 µA to 3000 µA. The IMAXMON current can
be sunk by an external current source or by connecting RMAXMON to ground:
12.1.6 Pulse width adjustment
The pulse width adjustment time is determined by the value of resistor RPWA; see
Figure 7.
[ps]
The tPWA range is from −100 ps to +100 ps which corresponds with a RPWA range
between a minimum resistance of 6.7 kΩ and a maximum resistance of 20 kΩ. The PWA
function is disabled when the PWA input is short-circuited to ground; tPWA equals 0 ps for
a disabled PWA function.
IMON alarm()
NMAXMON VMAXMON
RMAXMON
-------------------------
×=
Fig 7. Pulse width adjustment
tPWA 200 RPWA 10 kΩ–
RPWA
-----------------------------------
×=
mgt893
RPWA (kΩ)
tPWA
(ps)
100
0
−100
2010
6.7
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 21 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12.2 TZA3011A with dual-loop control
A simplified application using the TZA3011A with dual-loop control and with an
AC-coupled laser at 3.3 V laser voltage is illustrated in Figure 8. The average power level
and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and
BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The
alarm threshold on the operating current is made temperature dependent with resistor
RVTEMP connected between VTEMP and MAXOP. This alarm detects the end of life of the
laser.
The resistor RPWA enables pulse width adjustment for optimizing the eye diagram.
Fig 8. TZA3011A with AC-coupled laser and dual-loop control
Ioper alarm()
NMAXOP VMAXOP
RMAXOP
---------------------TCVTEMP Tj25 °C–()×
RVTEMP
--------------------------------------------------------------
–
×=
mgt895
TZA3011A
132
AVR
ER
MODOUT
MODIN
BIASOUT
BIASIN
MON
VCCO
ENABLE
ALOP
ALMON
MAXOP
VTEMP
MAXMON
RREF
PWA
31 30 29 28 27 26 25
24
23
22
21
20
19
18
2
3
4
5
6
7
8
910 11 12 13 14 15 16 17
BIAS
laser with
monitor diode
GND
LA
LA
LAQ
LAQ
GND
VCCA
VCCD
DIN
3.3 V
3.3 V
3.3 V
DINQ
TEST
CIN
CINQ
GND
ALRESET
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 22 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12.3 TZA3011B with dual-loop control
A simplified application using the TZA3011B with dual-loop control and with a DC-coupled
laser at 3.3 V or 5 V laser voltage is illustrated in Figure 9. The average power level and
the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and
BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively.
The open-drain outputs ALOP and ALMON are short-circuited with pin ENABLE causing
an active alarm to disable the bias and modulation current sources. The ALRESET input
will reset the alarm latches and enable normal operation.
Fig 9. TZA3011B with DC-coupled laser and dual-loop control
mgt894
TZA3011B
132
AVR
ER
MODOUT
MODIN
BIASOUT
BIASIN
MON
VCCO
ENABLE
ALOP
ALMON
MAXOP
VTEMP
MAXMON
RREF
PWA
31 30 29 28 27 26 25
24
23
22
21
20
19
18
2
3
4
5
6
7
8
910 11 12 13 14 15 16 17
BIAS
laser with
monitor diode
GND
LA
LA
LAQ
LAQ
GND
VCCA
VCCD
DIN
3.3 V
3.3 V or 5 V
3.3 V
DINQ
TEST
CIN
CINQ
GND
ALRESET
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 23 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
12.4 TZA3011B with average loop control
A simplified application using the TZA3011B with average loop control and a DC-coupled
laser at 3.3 V or 5 V laser voltage is illustrated in Figure 10. The ER pin is short-circuited
to ground for the average loop control. The average power level is determined by the
resistor RAVR. The average loop controls the bias current and the BIASOUT output is
connected to the BIASIN input. The modulation current is determined by the MODIN input
voltage which is generated by the resistor RMODIN and the 100 µA source current of the
MODIN pin.
Fig 10. TZA3011B with DC-coupled laser and average loop control
mgt896
TZA3011B
132
AVR
ER
MODOUT
MODIN
BIASOUT
BIASIN
MON
VCCO
ENABLE
ALOP
ALMON
MAXOP
VTEMP
MAXMON
RREF
PWA
31 30 29 28 27 26 25
24
23
22
21
20
19
18
2
3
4
5
6
7
8
910 11 12 13 14 15 16 17
BIAS
laser with
monitor diode
GND
LA
LA
LAQ
LAQ
GND
VCCA
VCCD
DIN
3.3 V
3.3 V or 5 V
3.3 V
DINQ
TEST
CIN
CINQ
GND
ALRESET
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 24 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
13. Package outline
Fig 11. Package outline SOT560-1 (HBCC32)
4.2
A1bA2
UNIT DE1e1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
00-02-01
03-03-12
IEC JEDEC JEITA
mm 0.8 0.10
0.05 0.7
0.6 5.1
4.9 3.2
3.0
5.1
4.9
3.2
3.0
0.35
0.20
DIMENSIONS (mm are the original dimensions)
SOT560-1 MO-217
D1
0.5
0.3
b1
0.50
0.35
b2
0.50
0.35
b3
4.15
e3
E
0.5
we xy
0.15 0.15 0.05
4.2
e2
4.15
e4
0.2
v
0 2.5 5 mm
scale
SOT560-1
HBCC32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
A
max.
detail X
y
vA
e
e1
e3
D1
e2
X
D
E
A
B
C
32
1
e4
E1
A1
A2
A
xC
xB
b
b3
b1
ball A1
index area
b2AC
CB
vM
wM
AC
CB
vM
wM
AC
CB
vM
wM
AC
CB
vM
wM
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 25 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
14. Soldering
14.1 Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology. A more in-depth account of
soldering ICs can be found in our
Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface mount IC packages. Wave
soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is recommended.
14.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement. Driven by legislation and
environmental forces the worldwide use of lead-free solder pastes is increasing.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)
vary between 100 seconds and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 °Cto270°C depending on solder paste
material. The top-surface temperature of the packages should preferably be kept:
•below 225 °C (SnPb process) or below 245 °C (Pb-free process)
–for all BGA, HTSSON..T and SSOP..T packages
–for packages with a thickness ≥2.5 mm
–for packages with a thickness < 2.5 mm and a volume ≥350 mm3 so called
thick/large packages.
•below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
14.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal results:
•Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
–larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 26 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
–smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
•For packages with leads on four sides, the footprint must be placed at a 45° angle to
the transport direction of the printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C
or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most
applications.
14.4 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage
(24 V or less) soldering iron applied to the flat part of the lead. Contact time must be
limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 seconds to 5 seconds between 270 °C and 320 °C.
14.5 Package related soldering information
[1] For more detailed information on the BGA packages refer to the
(LF)BGA Application Note
(AN01026);
order a copy from your Philips Semiconductors sales office.
[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the
maximum temperature (with respect to time) and body size of the package, there is a risk that internal or
external package cracks may occur due to vaporization of the moisture in them (the so called popcorn
effect). For details, refer to the Drypack information in the
Data Handbook IC26; Integrated Circuit
Packages; Section: Packing Methods
.
[3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no
account be processed through more than one soldering cycle or subjected to infrared reflow soldering with
peak temperature exceeding 217 °C±10 °C measured in the atmosphere of the reflow oven. The package
body peak temperature must be kept as low as possible.
Table 9: Suitability of surface mount IC packages for wave and reflow soldering methods
Package[1] Soldering method
Wave Reflow[2]
BGA, HTSSON..T[3], LBGA, LFBGA, SQFP,
SSOP..T[3], TFBGA, VFBGA, XSON not suitable suitable
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,
HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not suitable[4] suitable
PLCC[5], SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended[5] [6] suitable
SSOP, TSSOP, VSO, VSSOP not recommended[7] suitable
CWQCCN..L[8], PMFP[9], WQCCN..L[8] not suitable not suitable
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 27 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the
solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink
on the top side, the solder might be deposited on the heatsink surface.
[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave
direction. The package footprint must incorporate solder thieves downstream and at the side corners.
[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger
than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered
pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by
using a hot bar soldering process. The appropriate soldering profile can be provided on request.
[9] Hot bar soldering or manual soldering is suitable for PMFP packages.
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 28 of 30
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
15. Revision history
Table 10: Revision history
Document ID Release
date Data sheet status Change
notice Doc. number Supersedes
TZA3011A_TZA3011B_6 20050120 Product data sheet - 9397 750 14437 TZA3011A_TZA3011B_5
Modifications: •The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•change unit bits/s to bit/s.
TZA3011A_TZA3011B_5 20030402 Product specification 9397 750 11282 TZA3011A_TZA3011B_4
TZA3011A_TZA3011B_4 20021106 Product specification 9397 750 10185 TZA3011A_TZA3011B_3
TZA3011A_TZA3011B_3 20020523 Preliminary specification 9397 750 09671 TZA3011A_TZA3011B_2
TZA3011A_TZA3011B_2 20020312 Preliminary specification 9397 750 09231 TZA3011A_B_1
TZA3011A_B_1 20010129 Objective specification 9397 750 07764 -
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 29 of 30
16. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
17. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
18. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Bare die — All die are tested and are guaranteed to comply with all data
sheet limits up to the point of wafer sawing for a period of ninety (90) days
from the date of Philips' delivery. If there are data sheet limits not guaranteed,
these will be separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips Semiconductors
has no control of third party procedures in the sawing, handling, packing or
assembly of the die. Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or systems after third party
sawing, handling, packing or assembly of the die. It is the responsibility of the
customer to test and qualify their application in which the die is used.
19. Trademarks
A-Rate — is a trademark of Koninklijke Philips Electronics N.V.
20. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains datafrom the preliminary specification. Supplementary datawill be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.Date of release: 20 January 2005
Document number: 9397 750 14437
Published in The Netherlands
Philips Semiconductors TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
21. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.2 Control features . . . . . . . . . . . . . . . . . . . . . . . . 2
2.3 Protection features . . . . . . . . . . . . . . . . . . . . . . 2
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Functional description . . . . . . . . . . . . . . . . . . . 8
7.1 Data and clock input. . . . . . . . . . . . . . . . . . . . . 8
7.2 Retiming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7.3 Pulse width adjustment. . . . . . . . . . . . . . . . . . . 9
7.4 Modulator output stage. . . . . . . . . . . . . . . . . . . 9
7.5 Dual-loop control. . . . . . . . . . . . . . . . . . . . . . . . 9
7.6 Average loop control. . . . . . . . . . . . . . . . . . . . 10
7.7 Direct current setting. . . . . . . . . . . . . . . . . . . . 10
7.8 Soft start. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7.9 Alarm functions. . . . . . . . . . . . . . . . . . . . . . . . 10
7.10 Enable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7.11 Reference block . . . . . . . . . . . . . . . . . . . . . . . 10
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Thermal characteristics. . . . . . . . . . . . . . . . . . 12
10 Static characteristics. . . . . . . . . . . . . . . . . . . . 12
11 Dynamic characteristics . . . . . . . . . . . . . . . . . 16
12 Application information. . . . . . . . . . . . . . . . . . 17
12.1 Design equations . . . . . . . . . . . . . . . . . . . . . . 17
12.1.1 Bias and modulation currents. . . . . . . . . . . . . 17
12.1.2 Average monitor current and extinction ratio . 18
12.1.3 Dual-loop control. . . . . . . . . . . . . . . . . . . . . . . 19
12.1.4 Alarm operating current . . . . . . . . . . . . . . . . . 19
12.1.5 Alarm monitor current. . . . . . . . . . . . . . . . . . . 20
12.1.6 Pulse width adjustment. . . . . . . . . . . . . . . . . . 20
12.2 TZA3011A with dual-loop control . . . . . . . . . . 21
12.3 TZA3011B with dual-loop control . . . . . . . . . . 22
12.4 TZA3011B with average loop control . . . . . . . 23
13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 24
14 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
14.1 Introduction to soldering surface mount
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
14.2 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 25
14.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 25
14.4 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 26
14.5 Package related soldering information. . . . . . 26
15 Revision history . . . . . . . . . . . . . . . . . . . . . . . 28
16 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 29
17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
19 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
20 Contact information . . . . . . . . . . . . . . . . . . . . 29
