R07DS0418EJ0500 Rev.5.00 Page 1 of 18
May 09, 2012
Preliminary Datasheet
RQA0004PXDQS
Silicon N-Channel MOS FET
Features
High Output Powe r, Hi gh Eff iciency
Pout = +29.7 dBm, PAE = 68% (f = 520 MHz)
Compact package capable of surface m ounting
Outline
1. Gate
2. Source
3. Drain
4. Source
1
3
2, 4
1
2
3
4
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
Note: Marking is “PX”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 16 V
Gate to source voltage VGSS ±5 V
Drain current ID 0.3 A
Channel dissipation Pchnote 3 W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Note: Value at Tc = 25C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is req uested.
R07DS0418EJ0500
Rev.5.00
May 09, 2012
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 2 of 18
May 09, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain current IDSS — — 2 A VDS = 16 V, VGS = 0
Gate to source leak current IGSS — — ±2 A VGS = ±5 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.3 0.6 0.9 V VDS = 6 V, ID = 1 mA
Forward Transfer Admittance |yfs| 0.3 0.43 0.6 S VDS = 6 V, ID = 0.3 A
Input capacitance Ciss — 10 — pF VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance Coss — 5 — pF VDS = 6 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 0.4 — pF VDG = 6 V, VGS = 0, f = 1 MHz
— 25.1 — dBm Output Power Pout — 0.33 — W
Power Added Efficiency PAE — 65 — %
VDS = 3.7 V, IDQ = 50 mA
f = 174 MHz
Pin = +13 dBm (20 mW)
— 26.6 — dBm Output Power Pout — 0.46 — W
Power Added Efficiency PAE — 71 — %
VDS = 3.7 V, IDQ = 50 mA
f = 520 MHz
Pin = +13 dBm (20 mW)
28.7 29.7 — dBm Output Power Pout 0.74 0.93 — W
Power Added Efficiency PAE 60 68 — %
VDS = 6 V, IDQ = 50 mA
f = 520 MHz
Pin = +13 dBm (20 mW)
Main Characteristics
50 100 150 2000 0
0.1
0.2
0.3
246810
0.4
1.25 V
1.5 V
1.75 V
V
GS
= 1.0 V
Maximum Channel Power
Dissipation Curve
Case Temperature TC (°C)
Channel Power Dissipation Pch (W)
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Pulse Test
5
4
2
1
3
2.0 V
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 3 of 18
May 09, 2012
0
2
4
6
8
10
12
V
DS
= 0
f = 1 MHz
-5 -4 -3 -2 -1 0 54321
1000 1500 20000
5
10
15
20
30
MSG
|S21|
2
500
V
DS
= 6 V
I
D
= 50 mA
25
1100.1
0.1
10
1
V
GS
= 0
f = 1 MHz
0.1
10
110
0.1
1
V
GS
= 0
f = 1 MHz
Gate to Source Voltage V
GS
(V)
Input Capacitance Ciss (pF)
Input Capacitance vs.
Gate to Source Voltage
Drain to Gate Voltage V
DG
(V)
Reverse Transfer Capacitance Crss (pF)
Reverse T ransfer Capacitance vs.
Drain to Gate Voltage
Output Capacitance vs.
Drain to Source Voltage
Output Capacitance Coss (pF)
Maximum Stable Gain MSG (dB)
Forward Transfer Coefficient |S21|
2
(dB)
Maximum Stable Gain,|S21|
2
vs. Frequency
Frequency f (MHz)
Drain to Source Voltage V
DS
(V)
0 0.5 1.0 1.5 2.0
0.2
0.3
0.4
0.5
0.1
V
DS
= 6 V
Pulse Test
I
D
V
DS
= 6 V
Pulse Test
0.01 0.1 1
0.1
1
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Forward transfer Admittance |yfs| (S)
Typical Transfer Characteristics
Drain Current I
D
(A)
Forward T ransfer Admittance
vs. Drain Current
Forward transfer Admittance |yfs| (S)
|yfs|
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 4 of 18
May 09, 2012
Evaluation Circuit 1 (@VDD = 3.7 V Tuning, f = 174 MHz)
RF OUT
RF IN
VGG VDD
C1
C2
C4
C5
C7
L1
L2
L3
R1
C1, C2, C5, C10: 100 pF Chip Capacitor
C3, C7: 1000 pF Chip Capacitor
C4, C6: 1 μF /+16V Chip Tantalum Capacitor
C8, C9: 22 pF Chip Capacitor
L1: 33 nH Chip Inductor
L2: 10 nH Chip Inductor
L3: 5.6 nH Chip Inductor
R1: 200 Ω Chip Resistor
R2: 6.8 kΩ Chip Resistor
50 Ω50 Ω
C9
C6
C8
C10
C3
R2
RQA0004
Output Power, Drain Current
vs. Input Power
Output Power Pout (dBm)
Input Power Pin (dBm)
0
5
10
25
30
0
0.1
0.2
0.3
-50510
20
0.15
0.05
V
DS
= 3.7V
I
DQ
= 50 mA
f = 174 MHz
I
D
Pout
15
Drain Current ID (A)
15
0.25
Power Gain, Power Added Efficiency
vs. Input Power
Power Gain PG (dB)
Input Power Pin (dBm)
0
10
20
30
35
0
20
40
60
70
-5 0 5 10
Power Added Efficiency PAE (%)
PG
15
V
DS
= 3.7V
I
DQ
= 50 mA
f = 174 MHz
PAE
5
25
15
50
30
10
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 5 of 18
May 09, 2012
Frequency f (MHz)
130 140 150 160 170 180
Output Power, Drain Current
vs. Frequency Power Gain, Power Added Efficiency,
vs. Frequency
140 150 160 170 180
Frequency f (MHz)
130
Idling Current IDQ (mA)
0100 150 200 300
250
Output Power, Drain Current,
vs. Idling Current
0
10
40
30
20
0
0.1
0.4
0.3
0.2
Output Power, Drain Current,
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
0
20
0
0.2
0.4
30
10 0.1
0.3
567893
Drain Current ID (A)
0
0.1
0.05
0.2
0
20
30
10
25
0
5
20
10
25
Power Added Efficiency PAE (%)
30
40
50
60
70
15
80
Power Gain PG (dB)
ID
Pout
PG
PAE
40
4
Output Power Pout (dBm)
VDS = 3.7 V
f = 174 MHz
Pin = 13 dBm
Output Power Pout (dBm) Output Power Pout (dBm)
0.3
345678
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
0
40
20
60
0
20
40
10
30
80
Drain to Source Voltage VDS (V)
Power Added Efficiency PAE (%)
Power Gain PG (dB)
9
Idling Current IDQ (mA)
0 50 100 150 300200
Power Gain, Power Added Efficiency,
vs. Idling Current
0
10
30
20
0
20
60
40
Power Added Efficiency PAE (%)
40 80
Pout
PG
Pout
PG
Drain Current ID (A)Drain Current ID (A)
ID
ID
15
5
0.25
0.15
IDQ = 50 mA
f = 174 MHz
Pin = 13 dBm
IDQ = 50 mA
f = 174 MHz
Pin = 13 dBm
50 250
Power Gain PG (dB)
VDS = 3.7 V
IDQ = 50 mA
Pin = 13 dBm
VDS = 3.7 V
f = 174 MHz
Pin = 13 dBm
PAE
PAE
VDS = 3.7 V
IDQ = 50 mA
Pin = 13 dBm
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 6 of 18
May 09, 2012
Evaluation Circuit 2 (@VDD = 3.7 & 6.0V Tuning, f = 520 MHz)
RF OUT
RF IN
VGG VDD
C1 C2 C3
C5 C6 C12
C13
L1L4
L2L3
R1
C1, C4, C10, C14: 100 pF Chip Capacitor
C2: 10 pF Chip Capacitor
C3, C7: 2 pF Chip Capacitor
C5, C12: 1000 pF Chip Capacitor
C6, C11: 1 μF /+16V Chip Tantalum Capacitor
C8: 2200 pF Chip Capacitor
C9: 3 pF Chip Capacitor
C13: 8 pF Chip Capacitor
L1, L2, L4: 5.6 nH Chip Inductor
L3: 27 nH Chip Inductor
L5: 4Turns D : 0.5 mm, φ2.4 mm Enamel Wire
R1: 6.8k Ω Chip Resistor
R2: 180 Ω Chip Resistor
50 Ω
50 ΩC14
C11
C9
C7
C8
C10
C4
L5
R2
RQA0004
Output Power, Drain Current
vs. Input Power
Output Power Pout (dBm)
Input Power Pin (dBm)
0
5
10
25
30
0
0.1
0.2
0.3
-5 0 5 10
20
0.15
0.05
V
DS
= 3.7V
I
DQ
= 50 mA
f = 520 MHz
I
D
Pout
15
Drain Current ID (A)
15
0.25
Power Gain, Power Added Efficiency
vs. Input Power
Input Power Pin (dBm)
0
10
20
30
40
0
20
40
60
80
-5 0 5 10
Power Added Efficiency PAE (%)
PAE
PG
15
V
DS
= 3.7V
I
DQ
= 50 mA
f = 520 MHz
Power Gain PG (dB)
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 7 of 18
May 09, 2012
Frequency f (MHz)
500 510 520 530 540 550
Output Power, Drain Current
vs. Frequency Power Gain, Power Added Efficiency,
vs. Frequency
510 520 530 540 550
Frequency f (MHz)
500
Idling Current I
DQ
(mA)
0100 150 200 300
250
Output Power, Drain Current,
vs. Idling Current
0
10
40
30
20
0
0.1
0.4
0.3
0.2
Output Power, Drain Current,
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
0
20
0
0.2
0.4
30
10 0.1
0.3
567893
Drain Current ID (A)
0
0.1
0.05
0.2
0
20
30
10
25
V
DS
= 3.7 V
I
DQ
= 50 mA
Pin = 13 dBm 0
5
20
10
25
Power Added Efficiency PAE (%)
30
40
50
60
70
15
80
Power Gain PG (dB)
PG
PAE
40
4
Output Power Pout (dBm)
VDS = 3.7 V
f = 520 MHz
Pin = 13 dBm
Output Power Pout (dBm) Output Power Pout (dBm)
V
DS
= 3.7 V
I
DQ
= 50 mA
Pin = 13 dBm
0.3
345678
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
0
40
20
60
0
20
40
10
30
80
Drain to Source Voltage V
DS
(V)
Power Added Efficiency PAE (%)
Power Gain PG (dB)
9
Idling Current I
DQ
(mA)
0 50 100 150 300200
Power Gain, Power Added Efficiency,
vs. Idling Current
0
10
30
20
0
20
60
40
Power Added Efficiency PAE (%)
40 80
Pout
PG
Pout
PG
Drain Current ID (A)
Drain Current ID (A)
I
D
I
D
PAE
15
5
0.25
0.15
I
DQ
= 50 mA
f = 520 MHz
Pin = 13 dBm
I
DQ
= 50 mA
f = 520 MHz
Pin = 13 dBm
50 250
Power Gain PG (dB)
Pout
I
D
PAE
VDS = 3.7 V
f = 520 MHz
Pin = 13 dBm
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 8 of 18
May 09, 2012
500 510 520 530 540 550
Output Power, Drain Current
vs. Frequency Power Gain, Power Added Efficiency,
vs. Frequency
510 520 530 540 550
Frequency f (MHz)
500
Idling Current IDQ (mA)
0100 150 200 300
250
Output Power, Drain Current,
vs. Idling Current
0
10
40
30
20
0
0.1
0.4
0.3
0.2
Drain Current ID (A)
0
0.1
0.2
0
20
40
10
30
0
5
20
10
25
Power Added Efficiency PAE (%)
30
40
50
60
70
15
80
Power Gain PG (dB)
VDS = 6 V
f = 520 MHz
Pin = 13 dBm
Output Power Pout (dBm) Output Power Pout (dBm)
V
DS
= 6 V
I
DQ
= 50 mA
Pin = 13 dBm
0.4
Idling Current IDQ (mA)
0 50 100 150 300200
Power Gain, Power Added Efficiency,
vs. Idling Current
0
10
30
20
0
20
60
40
Power Added Efficiency PAE (%)
4080
PG
Drain Current ID (A)
I
D
0.3
50 250
Power Gain PG (dB)
Pout
Output Power, Drain Current
vs. Input Power
Output Power Pout (dBm)
Input Power Pin (dBm)
0
10
40
0
0.1
0.2
0.4
-50510
20
V
DS
= 6V
I
DQ
= 50 mA
f = 520 MHz
I
D
Pout
15
Drain Current ID (A)
Power Gain, Power Added Efficiency
vs. Input Power
Power Gain PG (dB)
Input Power Pin (dBm)
0
10
20
30
40
0
20
40
60
80
-50510
Power Added Efficiency PAE (%)
15
V
DS
= 6V
I
DQ
= 50 mA
f = 520 MHz
30 0.3
PG
I
D
PG
Pout
PAE
Frequency f (MHz)
PAE
PAE
VDS = 6V
f = 520 MHz
Pin = 13 dBm
V
DS
= 6 V
I
DQ
= 50 mA
Pin = 13 dBm
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 9 of 18
May 09, 2012
Evaluation Circuit 3 (@VDD = 3.7 V Tuning, f = 800 to 870 MHz)
50 Ω
VDD
50 Ω
RF OUT
6.8 kΩ
100 pF
100 pF
100 pF
100 pF
1 μF/+16V
7 pF
1 μF/+16 V
VGG
200 Ω
18 nH
2.7 nH
1000 pF
1000 pF
20 pF
RF IN
10 pF
0
10
20
30
40
0
0.4
0.2
0.8
0.6
Output Power Pout (dBm)
Drain Current ID (A)
05 1510 20 25
Input Power Pin (dBm)
05 1510 20 25
Input Power Pin (dBm)
Pout
I
D
V
DS
= 3.7 V
I
DQ
= 100 mA V
DS
= 3.7 V
I
DQ
= 100 mA
0
10
20
30
40
0
20
40
60
80
Power Gain PG (dB)
Power Added Efficiency PAE (%)
PAE
PG
f = 835 MHz
f = 835 MHz
f = 835 MHz
800 MHz
870 MHz
835 MHz
800 MHz
800 MHz
800 MHz
870 MHz
870 MHz
f = 870 MHz
Power Gain, Power Added Efficiency
vs. Input Power
Output Power, Drain Current
vs. Input Power
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 10 of 18
May 09, 2012
800 900850 800 900850
Frequency f (MHz) Frequency f (MHz)
Output Power, Drain Current
vs. Frequency Power Gain, Power Added Efficiency,
vs. Frequency
V
DS
= 3.7 V
I
DQ
= 100 mA
Pin = +17 dBm
V
DS
= 3.7 V
I
DQ
= 100 mA
Pin = +17 dBm
I
D
Pout
PG
PAE
0
20
40
30
10
Output Power Pout (dBm)
0
10
40
30
20
Power Gain PG (dB)
0
0.4
0.2
0.6
0.8
Drain Current I
D
(A)
0
20
40
60
80
Power Added Efficiency PAE (%)
56345634
Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V)
Output Power, Drain Current,
vs. Drain to Source Voltage Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
f = 835 MHz
I
DQ
= 100 mA
Pin = +17 dBm
f = 835 MHz
I
DQ
= 100 mA
Pin = +17 dBm
Pout
I
D
PG
PAE
10
40
30
20
0
10
40
30
20
0
Output Power Pout (dBm)
Power Gain PG (dB)
0
0.4
0.2
0.8
0.6
Drain Current I
D
(A)
0
40
20
60
80
Power Added Efficiency PAE (%)
f = 835 MHz
V
DS
= 3.7 V
Pin = +17 dBm
f = 835 MHz
V
DS
= 3.7 V
Pin = +17 dBm
Pout
I
D
PG
PAE
Output Power, Drain Current,
vs. Idling Current Power Gain, Power Added Efficiency,
vs. Idling Current
0 50 100 200150 300250
Idling Current IDQ (mA)
50 100 200150 300250
Idling Current IDQ (mA)
Output Power Pout (dBm)
0
10
30
20
40
10
30
20
40
Power Gain PG (dB)
0
0.2
0.8
0.6
0.4
Drain Current I
D
(A)
0
20
60
40
80
Power Added Efficiency PAE (%)
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 11 of 18
May 09, 2012
Evaluation Circuit 4 (@VDD = 3.7 V Tuning, f = 890 to 950 MHz)
50 Ω
VDD
50 ΩRF OUT
6.8 kΩ
100 pF
100 pF
100 pF
100 pF
1 μF/+16V
7 pF
1 μF/+16 V
VGG
200 Ω
18 nH
1.8 nH
1000 pF
1000 pF
20 pF
RF IN
24 pF
Output Power Pout (dBm)
Drain Current ID (A)
Input Power Pin (dBm) Input Power Pin (dBm)
Power Gain PG (dB)
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Input Power
Output Power, Drain Current
vs. Input Power
0
10
20
30
40
0
0.4
0.2
0.8
0.6
05 1510 20 25 0 5 1510 20 25
Pout
I
D
V
DS
= 3.7 V
I
DQ
= 50 mA V
DS
= 3.7 V
I
DQ
= 50 mA
0
10
20
30
40
0
20
40
60
80
PAE
PG
f = 920 MHz
f = 890 MHz
f = 920 MHz
950 MHz
890 MHz
950 MHz
920 MHz
890 MHz
950 MHz
950 MHz
920 MHz
f = 890 MHz
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 12 of 18
May 09, 2012
Frequency f (MHz) Frequency f (MHz)
Output Power, Drain Current
vs. Frequency Power Gain, Power Added Efficiency,
vs. Frequency
Output Power Pout (dBm)
Power Gain PG (dB)
Drain Current I
D
(A)
Power Added Efficiency PAE (%)
Drain to Source Voltage V
DS
(V) Drain to Source Voltage V
DS
(V)
Output Power, Drain Current,
vs. Drain to Source Voltage Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
Output Power Pout (dBm)
Power Gain PG (dB)
Drain Current I
D
(A)
Power Added Efficiency PAE (%)
Output Power, Drain Current,
vs. Idling Current Power Gain, Power Added Efficiency,
vs. Idling Current
Idling Current I
DQ
(mA) Idling Current I
DQ
(mA)
Output Power Pout (dBm)
Power Gain PG (dB)
Drain Current I
D
(A)
Power Added Efficiency PAE (%)
850 950900 850 950900
V
DS
= 3.7 V
I
DQ
= 50 mA
Pin = +17 dBm
V
DS
= 3.7 V
I
DQ
= 50 mA
Pin = +17 dBm
I
D
Pout
PG
PAE
0
20
40
30
10
0
10
40
30
20
0
0.4
0.2
0.6
0.8
0
20
40
60
80
56345634
f = 920 MHz
I
DQ
= 50 mA
Pin = +17 dBm
f = 920 MHz
I
DQ
= 50 mA
Pin = +17 dBm
Pout
I
D
PG
PAE
10
40
30
20
0
10
40
30
20
0
0
0.4
0.2
0.8
0.6
0
40
20
60
80
f = 920 MHz
V
DS
= 3.7 V
Pin = +17 dBm
f = 920 MHz
V
DS
= 3.7 V
Pin = +17 dBm
Pout
I
D
PG
PAE
0 50 100 200150 300250 50 100 200150 300250
0
10
30
20
40
10
30
20
40
0
0.2
0.8
0.6
0.4
0
20
60
40
80
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 13 of 18
May 09, 2012
S Parameter
(VDS = 3.6 V, IDQ = 50 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.946 -40.3 15.41 148.7 0.021 69.4 0.784 -30.2
150 0.931 -58.4 12.58 136.4 0.029 46.8 0.744 -51.2
200 0.898 -74.0 11.57 126.4 0.034 36.1 0.700 -66.0
250 0.865 -87.5 11.08 117.4 0.037 27.8 0.657 -77.8
300 0.856 -99.2 10.15 109.2 0.038 20.8 0.640 -86.9
350 0.827 -108.7 9.91 102.2 0.039 14.1 0.615 -94.4
400 0.812 -116.8 9.44 95.7 0.040 8.9 0.601 -100.8
450 0.804 -122.6 8.78 90.2 0.040 4.0 0.595 -106.1
500 0.792 -128.2 8.15 84.9 0.040 -0.9 0.595 -110.9
550 0.791 -132.4 7.55 80.5 0.040 -4.6 0.596 -115.2
600 0.790 -136.4 7.00 76.4 0.039 -8.2 0.602 -119.1
650 0.787 -140.2 6.48 72.3 0.038 -11.5 0.608 -122.7
700 0.787 -143.7 6.03 68.5 0.038 -14.5 0.616 -125.9
750 0.788 -147.1 5.59 64.9 0.037 -17.6 0.626 -129.2
800 0.792 -150.0 5.22 61.3 0.036 -20.5 0.634 -132.1
850 0.797 -152.7 4.86 58.0 0.035 -23.1 0.643 -134.9
900 0.801 -155.2 4.54 54.7 0.034 -25.1 0.654 -137.6
950 0.807 -157.3 4.29 51.4 0.033 -27.5 0.664 -140.2
1000 0.812 -159.4 4.06 48.8 0.032 -29.7 0.675 -142.8
1050 0.817 -161.7 3.83 46.1 0.031 -31.6 0.686 -145.3
1100 0.827 -163.5 3.62 43.7 0.030 -33.7 0.695 -147.5
1150 0.834 -165.6 3.42 41.0 0.028 -35.1 0.704 -149.8
1200 0.840 -167.1 3.24 38.6 0.027 -36.6 0.714 -152.0
1250 0.846 -168.4 3.06 36.3 0.026 -38.2 0.723 -154.0
1300 0.845 -170.1 2.89 33.7 0.025 -39.6 0.733 -156.0
1350 0.839 -171.7 2.73 31.2 0.024 -40.9 0.740 -158.1
1400 0.843 -173.8 2.59 28.6 0.023 -41.9 0.749 -160.2
1450 0.847 -175.4 2.47 26.3 0.022 -43.0 0.755 -161.9
1500 0.850 -177.1 2.34 24.0 0.020 -43.9 0.760 -164.0
1550 0.852 -179.0 2.24 21.8 0.019 -44.6 0.768 -166.0
1600 0.858 179.6 2.13 19.7 0.018 -44.7 0.774 -167.8
1650 0.861 178.3 2.05 17.6 0.017 -45.2 0.777 -169.6
1700 0.863 176.8 1.96 15.4 0.016 -45.3 0.784 -171.7
1750 0.863 174.8 1.88 13.1 0.015 -44.9 0.792 -173.6
1800 0.873 173.0 1.81 10.9 0.014 -44.9 0.798 -175.3
1850 0.878 171.4 1.75 9.0 0.013 -43.7 0.800 -177.3
1900 0.886 170.2 1.68 7.3 0.012 -42.9 0.807 -179.3
1950 0.895 168.9 1.61 5.5 0.012 -41.0 0.816 179.1
2000 0.894 168.2 1.55 4.2 0.011 -38.6 0.818 177.6
2050 0.895 167.3 1.48 2.7 0.010 -35.6 0.822 175.6
2100 0.890 165.8 1.42 0.9 0.010 -33.6 0.830 173.8
2150 0.890 164.0 1.37 -1.1 0.009 -29.1 0.837 172.3
2200 0.896 162.6 1.32 -3.1 0.009 -24.1 0.838 170.7
2250 0.898 161.1 1.27 -5.2 0.008 -19.0 0.842 168.9
2300 0.902 159.8 1.22 -7.1 0.008 -12.8 0.848 167.1
2350 0.903 158.4 1.19 -9.0 0.008 -8.3 0.851 165.8
2400 0.901 157.4 1.15 -11.0 0.008 -3.0 0.852 164.1
2450 0.895 155.9 1.11 -12.6 0.008 2.0 0.855 162.4
2500 0.894 154.0 1.07 -14.4 0.008 6.9 0.861 160.9
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 14 of 18
May 09, 2012
S Parameter
(VDS = 6 V, IDQ = 10 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.973 -34.4 12.25 150.2 0.022 69.9 0.869 -20.3
150 0.931 -49.5 11.13 138.3 0.031 54.5 0.858 -35.1
200 0.913 -63.2 10.12 128.8 0.038 43.4 0.823 -45.4
250 0.896 -74.6 9.10 120.5 0.043 34.8 0.801 -54.6
300 0.892 -85.3 8.08 113.3 0.046 26.8 0.788 -62.5
350 0.878 -93.6 7.27 107.0 0.048 19.3 0.773 -70.0
400 0.870 -101.5 6.56 100.5 0.050 12.6 0.759 -77.0
450 0.861 -108.4 5.95 94.8 0.051 6.6 0.754 -83.0
500 0.853 -114.4 5.40 89.2 0.051 0.9 0.749 -88.6
550 0.853 -119.5 4.91 84.0 0.051 -3.9 0.747 -93.9
600 0.851 -124.3 4.50 79.0 0.050 -8.5 0.750 -98.8
650 0.845 -128.6 4.15 74.4 0.050 -12.8 0.752 -103.3
700 0.844 -132.8 3.79 70.0 0.048 -16.7 0.755 -107.5
750 0.846 -136.7 3.48 65.6 0.047 -20.3 0.761 -111.6
800 0.849 -140.2 3.22 61.6 0.046 -23.9 0.767 -115.4
850 0.853 -143.5 2.99 57.7 0.045 -27.1 0.772 -119.2
900 0.857 -146.4 2.78 53.9 0.043 -29.8 0.778 -122.7
950 0.860 -149.0 2.59 50.1 0.042 -32.9 0.785 -126.1
1000 0.867 -151.5 2.44 47.2 0.041 -35.5 0.792 -129.4
1050 0.870 -154.0 2.30 44.3 0.039 -38.2 0.798 -132.5
1100 0.875 -156.5 2.15 41.4 0.037 -40.8 0.805 -135.5
1150 0.883 -158.7 2.03 38.5 0.036 -43.1 0.811 -138.4
1200 0.888 -161.0 1.92 35.9 0.034 -45.2 0.818 -141.1
1250 0.890 -162.5 1.79 33.4 0.033 -47.4 0.823 -143.7
1300 0.890 -164.5 1.69 30.7 0.031 -49.1 0.830 -146.2
1350 0.886 -166.6 1.59 27.7 0.030 -51.1 0.834 -148.7
1400 0.886 -168.7 1.51 25.2 0.028 -52.6 0.840 -151.2
1450 0.886 -170.8 1.43 22.9 0.027 -54.4 0.843 -153.3
1500 0.889 -172.6 1.36 20.3 0.025 -56.0 0.846 -155.9
1550 0.891 -174.5 1.29 18.1 0.024 -57.4 0.851 -158.2
1600 0.895 -176.1 1.23 15.9 0.022 -58.5 0.855 -160.3
1650 0.898 -177.6 1.18 13.7 0.021 -59.9 0.855 -162.4
1700 0.896 -179.5 1.12 11.4 0.020 -60.8 0.859 -164.7
1750 0.897 178.5 1.08 9.3 0.019 -61.8 0.866 -166.9
1800 0.903 176.4 1.03 7.0 0.017 -62.7 0.869 -168.8
1850 0.911 174.8 0.99 4.9 0.016 -62.8 0.869 -171.0
1900 0.917 173.4 0.95 3.2 0.015 -63.2 0.874 -173.3
1950 0.926 172.0 0.91 1.5 0.014 -63.2 0.881 -175.1
2000 0.928 171.1 0.87 0.2 0.012 -63.1 0.879 -176.8
2050 0.925 170.1 0.83 -1.5 0.011 -61.7 0.883 -179.1
2100 0.918 168.7 0.80 -3.3 0.010 -60.9 0.888 179.0
2150 0.916 166.8 0.76 -5.3 0.009 -59.1 0.894 177.4
2200 0.918 165.3 0.73 -7.4 0.008 -55.0 0.894 175.6
2250 0.922 163.6 0.71 -9.4 0.007 -52.5 0.895 173.6
2300 0.921 162.2 0.68 -11.4 0.007 -46.3 0.900 171.8
2350 0.923 160.6 0.65 -13.3 0.006 -40.6 0.902 170.3
2400 0.920 159.7 0.63 -15.2 0.006 -33.7 0.902 168.5
2450 0.913 158.0 0.61 -16.8 0.005 -24.3 0.902 166.6
2500 0.911 156.0 0.59 -18.6 0.005 -14.3 0.907 164.9
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 15 of 18
May 09, 2012
S Parameter
(VDS = 6 V, IDQ = 25 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.959 -37.1 15.64 150.5 0.021 68.6 0.793 -24.9
150 0.921 -53.7 13.98 137.6 0.030 51.0 0.772 -42.1
200 0.900 -68.0 12.68 128.1 0.034 40.6 0.732 -54.4
250 0.880 -80.1 11.49 119.6 0.038 31.7 0.701 -64.6
300 0.875 -90.8 10.21 112.2 0.040 24.1 0.685 -73.2
350 0.857 -99.6 9.32 105.9 0.042 17.3 0.663 -80.8
400 0.844 -107.8 8.53 99.4 0.043 11.5 0.649 -87.5
450 0.836 -114.7 7.76 93.6 0.044 6.1 0.642 -93.1
500 0.827 -120.7 7.12 88.2 0.044 1.3 0.639 -98.3
550 0.824 -125.9 6.56 83.3 0.043 -3.1 0.637 -103.0
600 0.821 -130.4 6.06 78.7 0.043 -7.0 0.641 -107.4
650 0.818 -134.3 5.63 74.4 0.042 -10.7 0.645 -111.3
700 0.813 -138.3 5.20 70.4 0.041 -14.2 0.651 -115.1
750 0.816 -142.1 4.83 66.5 0.040 -17.5 0.659 -118.7
800 0.817 -145.5 4.50 62.6 0.040 -20.5 0.667 -122.0
850 0.820 -148.4 4.19 59.2 0.039 -23.3 0.674 -125.3
900 0.826 -150.9 3.93 55.7 0.037 -25.8 0.684 -128.3
950 0.830 -153.2 3.70 52.4 0.036 -28.5 0.693 -131.4
1000 0.834 -155.8 3.50 49.4 0.035 -30.8 0.703 -134.3
1050 0.841 -158.3 3.31 46.4 0.034 -33.1 0.713 -137.1
1100 0.847 -160.3 3.12 44.0 0.033 -35.4 0.722 -139.6
1150 0.852 -162.3 2.96 41.3 0.031 -37.3 0.730 -142.2
1200 0.856 -164.4 2.80 38.8 0.030 -39.1 0.739 -144.7
1250 0.865 -165.9 2.63 36.5 0.029 -41.0 0.747 -147.0
1300 0.862 -167.5 2.49 33.8 0.028 -42.5 0.756 -149.3
1350 0.860 -169.6 2.35 30.9 0.026 -43.9 0.762 -151.6
1400 0.860 -171.5 2.24 28.5 0.025 -45.5 0.771 -153.8
1450 0.862 -173.2 2.12 26.1 0.024 -46.8 0.777 -155.8
1500 0.863 -175.2 2.02 23.6 0.023 -48.1 0.781 -158.1
1550 0.866 -176.9 1.93 21.6 0.022 -49.2 0.788 -160.3
1600 0.871 -178.4 1.84 19.3 0.020 -49.9 0.793 -162.4
1650 0.875 -179.8 1.76 17.2 0.019 -50.8 0.796 -164.3
1700 0.873 178.5 1.68 14.8 0.018 -51.4 0.802 -166.5
1750 0.876 176.5 1.61 12.7 0.017 -51.4 0.810 -168.5
1800 0.883 174.5 1.56 10.4 0.016 -51.6 0.815 -170.3
1850 0.889 173.0 1.50 8.5 0.015 -51.7 0.816 -172.5
1900 0.897 171.7 1.44 6.7 0.014 -50.9 0.823 -174.6
1950 0.905 170.4 1.38 5.1 0.013 -50.1 0.832 -176.4
2000 0.909 169.7 1.33 3.6 0.012 -49.2 0.833 -178.0
2050 0.905 168.7 1.27 2.1 0.011 -47.0 0.837 179.9
2100 0.899 167.3 1.21 0.1 0.010 -45.2 0.843 177.9
2150 0.898 165.3 1.17 -1.8 0.009 -42.2 0.850 176.5
2200 0.902 163.9 1.12 -3.8 0.008 -37.3 0.851 174.7
2250 0.906 162.2 1.09 -6.0 0.008 -33.6 0.854 172.8
2300 0.908 160.9 1.05 -7.9 0.007 -28.1 0.860 171.0
2350 0.908 159.5 1.02 -9.8 0.007 -22.0 0.863 169.5
2400 0.907 158.5 0.98 -11.5 0.007 -16.1 0.863 167.8
2450 0.898 157.1 0.95 -13.3 0.007 -9.5 0.866 166.0
2500 0.898 154.9 0.92 -15.0 0.007 -2.6 0.872 164.4
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 16 of 18
May 09, 2012
S Parameter
(VDS = 6 V, IDQ = 50 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.960 -41.0 19.06 150.1 0.019 63.9 0.702 -28.7
150 0.916 -58.4 16.77 137.1 0.027 48.6 0.688 -48.7
200 0.892 -73.5 15.28 127.1 0.031 38.3 0.646 -62.4
250 0.868 -86.2 14.02 118.4 0.035 30.0 0.613 -73.4
300 0.860 -97.3 12.48 110.8 0.036 22.9 0.602 -82.6
350 0.840 -106.3 11.51 104.4 0.037 16.3 0.582 -90.1
400 0.825 -114.5 10.57 98.0 0.038 11.5 0.571 -96.7
450 0.816 -121.2 9.62 92.7 0.038 6.3 0.567 -102.2
500 0.810 -126.8 8.80 87.6 0.038 2.0 0.567 -107.1
550 0.806 -131.6 8.12 83.0 0.038 -2.0 0.569 -111.4
600 0.802 -135.9 7.49 78.8 0.037 -5.4 0.573 -115.4
650 0.797 -139.6 6.94 74.9 0.037 -8.7 0.578 -119.0
700 0.795 -143.4 6.44 71.2 0.036 -11.8 0.586 -122.3
750 0.797 -146.7 5.97 67.5 0.035 -14.7 0.596 -125.5
800 0.798 -149.7 5.57 64.0 0.035 -17.6 0.604 -128.4
850 0.806 -152.4 5.20 60.7 0.034 -19.9 0.612 -131.3
900 0.807 -155.0 4.89 57.4 0.033 -21.9 0.623 -134.0
950 0.811 -157.3 4.59 54.3 0.032 -24.5 0.632 -136.6
1000 0.817 -159.5 4.35 51.4 0.031 -26.4 0.645 -139.2
1050 0.822 -161.6 4.11 48.7 0.030 -28.4 0.655 -141.7
1100 0.831 -163.6 3.90 46.3 0.029 -30.5 0.666 -144.0
1150 0.834 -165.7 3.69 43.7 0.028 -32.1 0.674 -146.3
1200 0.842 -167.2 3.50 41.3 0.027 -33.4 0.685 -148.5
1250 0.846 -168.7 3.30 39.0 0.026 -35.1 0.695 -150.5
1300 0.848 -170.2 3.13 36.4 0.025 -36.5 0.703 -152.6
1350 0.842 -171.9 2.97 33.7 0.024 -37.5 0.711 -154.7
1400 0.843 -173.9 2.82 31.4 0.023 -38.5 0.721 -156.7
1450 0.844 -175.6 2.69 29.0 0.022 -40.1 0.727 -158.5
1500 0.849 -177.3 2.56 26.7 0.021 -40.5 0.733 -160.7
1550 0.849 -178.8 2.45 24.5 0.020 -41.3 0.740 -162.7
1600 0.857 179.6 2.33 22.4 0.018 -41.5 0.748 -164.6
1650 0.860 178.2 2.24 20.1 0.017 -42.1 0.752 -166.3
1700 0.860 176.8 2.15 17.9 0.017 -42.2 0.758 -168.4
1750 0.861 174.8 2.06 15.9 0.016 -42.1 0.767 -170.3
1800 0.870 172.9 1.99 13.6 0.015 -41.9 0.774 -172.1
1850 0.878 171.4 1.92 11.5 0.014 -40.8 0.776 -174.0
1900 0.884 170.1 1.84 9.8 0.013 -39.7 0.784 -176.1
1950 0.889 169.0 1.77 8.3 0.012 -38.1 0.793 -177.7
2000 0.895 168.3 1.71 6.7 0.011 -36.3 0.796 -179.3
2050 0.890 167.5 1.63 5.3 0.011 -33.9 0.799 178.7
2100 0.886 165.9 1.57 3.3 0.010 -31.3 0.808 176.8
2150 0.887 164.1 1.51 1.3 0.009 -27.8 0.816 175.3
2200 0.891 162.6 1.46 -0.7 0.009 -23.0 0.818 173.6
2250 0.895 161.2 1.40 -2.7 0.009 -19.0 0.822 171.8
2300 0.897 159.7 1.36 -4.8 0.008 -14.5 0.828 170.1
2350 0.898 158.5 1.31 -6.6 0.008 -9.8 0.833 168.6
2400 0.896 157.4 1.27 -8.5 0.008 -5.1 0.835 167.0
2450 0.890 155.8 1.23 -10.4 0.008 -0.3 0.836 165.2
2500 0.890 154.0 1.19 -12.1 0.008 5.2 0.843 163.6
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 17 of 18
May 09, 2012
S Parameter
(VDS = 6 V, IDQ = 100 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.972 -45.9 22.91 149.6 0.019 65.4 0.615 -34.3
150 0.920 -64.3 19.70 136.4 0.024 48.3 0.597 -55.7
200 0.888 -80.4 17.99 125.8 0.028 37.6 0.560 -70.8
250 0.860 -93.9 16.78 116.9 0.031 29.8 0.534 -82.5
300 0.847 -104.9 14.91 109.3 0.032 23.1 0.517 -91.7
350 0.827 -113.3 13.65 103.1 0.033 16.8 0.517 -99.6
400 0.816 -120.8 12.39 97.3 0.033 11.9 0.511 -106.1
450 0.809 -126.9 11.24 92.4 0.033 7.4 0.512 -111.3
500 0.799 -132.3 10.23 87.7 0.033 3.3 0.513 -115.9
550 0.800 -136.7 9.38 83.4 0.033 -0.3 0.518 -120.0
600 0.801 -140.6 8.68 79.5 0.033 -3.5 0.524 -123.5
650 0.792 -144.0 8.00 75.9 0.032 -6.6 0.531 -126.7
700 0.788 -147.5 7.41 72.3 0.032 -9.3 0.540 -129.7
750 0.790 -150.6 6.89 68.9 0.031 -11.7 0.550 -132.5
800 0.793 -153.5 6.42 65.6 0.031 -14.3 0.558 -135.0
850 0.798 -156.1 5.99 62.3 0.030 -16.5 0.567 -137.5
900 0.801 -158.5 5.62 59.1 0.029 -18.3 0.578 -139.8
950 0.805 -160.5 5.31 56.1 0.028 -20.2 0.588 -142.2
1000 0.809 -162.7 5.03 53.5 0.027 -21.9 0.601 -144.5
1050 0.814 -164.5 4.77 51.1 0.027 -23.6 0.612 -146.5
1100 0.823 -166.3 4.51 48.5 0.026 -25.4 0.622 -148.5
1150 0.829 -168.2 4.29 45.9 0.025 -26.6 0.632 -150.6
1200 0.835 -169.7 4.08 43.7 0.024 -27.9 0.643 -152.6
1250 0.837 -171.0 3.85 41.5 0.023 -28.9 0.653 -154.3
1300 0.836 -172.5 3.65 39.0 0.022 -30.3 0.662 -156.1
1350 0.834 -174.2 3.47 36.4 0.021 -30.8 0.670 -158.1
1400 0.835 -176.1 3.31 33.9 0.021 -31.5 0.681 -159.9
1450 0.837 -177.8 3.15 31.6 0.020 -32.5 0.688 -161.4
1500 0.839 -179.4 3.00 29.4 0.019 -33.0 0.694 -163.4
1550 0.844 179.0 2.88 27.2 0.018 -33.2 0.702 -165.3
1600 0.849 177.7 2.75 25.1 0.017 -32.9 0.711 -167.0
1650 0.850 176.5 2.64 23.1 0.016 -32.8 0.715 -168.7
1700 0.850 174.9 2.53 20.8 0.015 -32.6 0.722 -170.6
1750 0.854 173.0 2.44 18.5 0.015 -31.9 0.731 -172.5
1800 0.861 171.4 2.36 16.4 0.014 -31.0 0.738 -174.1
1850 0.868 170.0 2.27 14.4 0.013 -29.7 0.741 -175.9
1900 0.875 168.7 2.19 12.6 0.012 -28.0 0.749 -177.9
1950 0.881 167.5 2.11 11.0 0.012 -26.0 0.759 -179.4
2000 0.886 166.8 2.03 9.6 0.011 -24.3 0.763 179.0
2050 0.882 166.0 1.95 8.0 0.011 -21.0 0.768 177.1
2100 0.878 164.6 1.87 6.2 0.010 -18.4 0.776 175.3
2150 0.877 163.1 1.80 4.2 0.010 -15.2 0.785 174.0
2200 0.883 161.5 1.74 2.2 0.010 -10.2 0.787 172.3
2250 0.891 159.9 1.68 0.1 0.009 -6.5 0.792 170.6
2300 0.892 158.6 1.63 -1.9 0.010 -2.2 0.799 168.9
2350 0.896 157.7 1.58 -3.8 0.009 1.0 0.804 167.5
2400 0.892 156.4 1.53 -5.7 0.009 4.1 0.806 166.0
2450 0.885 155.1 1.47 -7.5 0.010 7.7 0.810 164.3
2500 0.884 153.0 1.43 -9.4 0.010 11.4 0.816 162.7
RQA0004PXDQS Preliminary
R07DS0418EJ0500 Rev.5.00 Page 18 of 18
May 09, 2012
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-A UPAK / UPAKV MASS[Typ.]
0.050gSC-62 RENESAS CodeJEITA Package Code
Unit: mm
Package Name
UPAK
Ordering Information
Orderable Part Number Quantity Shipping Container
RQA0004PXTL-E 1000 pcs. 178 mm Reel, 12 mm Emboss Taping
Notice
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
SALES OFFICES
© 2012 Renesas Electronics Corporation. All rights reserved.
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