DATA SH EET
Product specification
Supersedes data of 1999 May 11 2001 Oct 12
DISCRETE SEMICONDUCTORS
BAV199
Low-leakage double diode
o
ok, halfpage
M3D088
2001 Oct 12 2
Philips Semiconductors Product specification
Low-leakage double diode BAV199
FEATURES
•Plastic SMD package
•Low leakage current: typ. 3 pA
•Switching time: typ. 0.8 µs
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak forward current:
max. 500 mA.
APPLICATION
•Low-leakagecurrentapplicationsin
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
doublediodeinasmallSOT23plastic
SMD package. The diodes are
connected in series.
MARKING
Note
1. ∗= p: Made in Hong Kong.
∗= t: Made in Malaysia.
∗= W: Made in China.
TYPE NUMBER MARKING
CODE(1)
BAV199 JY∗
PINNING
PIN DESCRIPTION
1 anode
2 cathode
3 anode; cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
21
3
Top view
MAM107
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current single diode loaded; note 1; see Fig.2 −160 mA
double diode loaded; note 1; see Fig.2 −140 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repetitive peak forward
current square wave; Tj=25°C prior to surge;
see Fig.4
tp=1µs−4A
t
p
=1ms −1A
t
p
=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2001 Oct 12 3
Philips Semiconductors Product specification
Low-leakage double diode BAV199
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF=1mA −900 mV
IF=10mA −1000 mV
IF=50mA −1100 mV
IF= 150 mA −1250 mV
IRreverse current see Fig.5
VR= 75 V 0.003 5 nA
VR= 75 V; Tj= 150 °C 3 80 nA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 2 −pF
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
0.8 3 µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2001 Oct 12 4
Philips Semiconductors Product specification
Low-leakage double diode BAV199
GRAPHICAL DATA
Device mounted on a FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0 200
300
0
100
200
MLB756
100 T ( C)
amb
o
IF
(mA)
single diode loaded
double diode loaded
Fig.3 Forward current as a function of forward
voltage; per diode.
handbook, halfpage
0 1.6
300
0
100
200
MLB752 - 1
0.8 1.20.4
IF
(mA)
V (V)
F
(1) (2) (3)
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
Based on square wave currents; Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
2001 Oct 12 5
Philips Semiconductors Product specification
Low-leakage double diode BAV199
VR=75V.
(1) Maximum values.
(2) Typical values.
Fig.5 Reverse current as a function of junction
temperature; per diode.
handbook, halfpage
10
2
10
3
150 200
500
MLB754
100
10
1
10
1
10
2
IR
(nA)
T ( C)
o
j
(1)
(2)
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020155
2
0
1
MBG526
VR (V)
Cd
(pF)
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery time test circuit and waveforms.
2001 Oct 12 6
Philips Semiconductors Product specification
Low-leakage double diode BAV199
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2001 Oct 12 7
Philips Semiconductors Product specification
Low-leakage double diode BAV199
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythatsuchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers usingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 12 Document order number: 9397 750 08764
