High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
1
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Features
High Power Handling
Low Loss / Low Distortion
Voltage Ratings up to 1000 Volts
Passivated Chip for Low Leakage Current
Low Theta (θ) Due to Full Face Chip Bonding
Leadless Low Inductance MELF Packages
Various Package Options
Available as Chips
Fully RoHS Compliant
Non-Magnetic Packages Available for MRI
Description
The MELF and HIPAX PIN diode series are
designed for usage in switch and attenuator
applications requiring high power handling and low
distortion. These diodes incorporate a fully
passivated PIN diode chip resulting in an extremely
low reverse bias leakage current. The
semiconductor technology utilized in the MELF and
HIPAX families draws on MACOM ’s substantial
experience in PIN diode design and wafer
fabrication. The result is a device which has a thick
I-region and long carrier lifetime while maintaining
low series resistance and capacitance values. The
chips of the MELF and HIPAX PIN diodes are
enclosed in a rugged ceramic package and is full
face bonded to metal pins on both the anode and
cathode. The result is a low loss PIN diode with low
thermal resistance due to symmetrical thermal
paths. The parts are offered in either magnetic or
non-magnetic, HIPAX (axial leaded) or MELF (Metal
Electrode Leadless Faced) surface mount packages
for MRI applications. The MELF is a rectangular
SMQ, package which is designed for high volume
tape and reel assembly. This easy to use package
design makes automatic pick and place, indexing
and assembly, extremely easy. The parallel flat sur-
faces are suitable for most key jaw or vacuum pick-
up techniques. All of the solderable surfaces are tin
plated and compatible with industry standard reflow
and vapor phase soldering processes. See Applica-
tion Note M538 for a typical solder reflow profile.
Many of MACOM’s HIPAX PIN diodes are also
available as chips. Please consult the “Silicon PIN
Chip Datasheet” for availability and specifications.
Absolute Maximum Ratings
TA = +25°C (Unless Otherwise Noted)1
1. Operation of this device above any one of these
parameters may cause permanent damage.
Parameter Absolute Maximum
DC Reverse Voltage (VR) (See Tables)
Operating Chip Junction
Temperature -55°C to +175°C
Storage Temperature -55°C to +200°C
Installation Temperature +280°C for 30 Seconds
ESD Class 1A, HBM
Package Styles
Applications
HIPAX PIN diodes are designed for use in a wide
variety of switch and attenuator applications from
HF through UHF frequencies and at power levels
above 1 kW, CW. The internal chip as well as each
diode assembly has been comprehensively tested
and characterized to ensure predictable and
repeatable performance.
Design Recommendations
Low Distortion Attenuators
MA4P4301B
Surface Mount Switches
MA4P7101F
Cellular Radio Antenna Switches
MA4P1200, MA4P1250
1072 & 1091
Notes
401 & 402
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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MA4P1000 Series Electrical Specifications @ TA = +25°C
Part #
(NM Indicates Non-
Magnetic)
CT
Total Capacitance
pF
VR
Reverse Voltage
VDC
RS
Series Resistance
W
RP
Parallel Resistance
kW
VR = 50 V, 1 MHz IR = 10 mA IF = 50 mA, 100 MHz VR = 0 V, 100 MHz
Typ. Max. Min. Max. Typ. Max. Min.
MA4P1200 - 401T 1.2 1.5
50 100 0.5 0.75 5
MA4P1200NM - 401T 1.2 1.5
MA4P1250 -1072T 0.8 1.2
MA4P1250NM -1072T 0.8 1.2
MA4P1450 -1091T 1.8 2.5
Part #
(NM Indicates Non-
Magnetic)
VF
Forward Voltage
(Max. I Forward @ 1V ≤
TL
Carrier Lifetime
Forward Bias
Harmonic Distortion
R(2a/a) * R(3a/a)
Reverse Bias
Harmonic Distortion
R(2a/a) R(3a/a)
IF = 50 mA IF = 10 mA, IR = 6 mA PIN = 30 W, 100 MHz
IF = 50 mA
PIN = 0 dBm, VR = 0 V,
100 MHz
Typ. Max. Min. Typ. Min. Typ. Min. Typ.
MA4P1200 - 401T
0.85 1.0 2 8 80 90 60 70
MA4P1200NM - 401T
MA4P1250 -1072T
MA4P1250NM-1072T
MA4P1450 -1091T
Power Dissipation and Thermal Resistance Ratings @ TA = +25°C
Package
Style Condition
MA4P1200(NM)-401T MA4P1250(NM)-1072T MA4P1450-1091T
PDISS θJC PDISS θJC PDISS θJC
B
Axial Lead
No Heatsink 1.5 W
15°C/W
Lead Length 1/4" 5.5 W
F
MELF
No Heatsink 6 W
15°C/W
10 W
5°C/W
Infinite Heatsink 18 W 30 W
*Notes:
1.) “NM” in the base part number signifies non-magnetic package.
2.) “T” suffix denotes tape and reel
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Typical Performance Curves @ TA = +25°C
MA4P1200 Series
Series Resistance @ 100 MHz vs. Forward Current Capacitance vs. Frequency & Reverse Bias
Frequency
Parallel Resistance vs. Frequency & Reverse Bias Heatsink Temperature vs. Max. Power Dissipation
°C
Heatsink Temperature
Maximum Power Dissipation
Watts
Capacitance
pF
MHz
Parallel Resistance
Ω
Frequency
MHz
Series Resistance
Ω
Forward Current
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Typical Performance Curves @ TA = +25°C
MA4P1250 Series
Series Resistance @ 100 MHz vs. Forward Current Capacitance vs. Frequency & Reverse Bias
Parallel Resistance vs. Frequency & Reverse Bias
Forward Current
Carrier Lifetime vs. Forward Bias Current
Forward Current
Carrier Lifetime
Series Resistance
Ω
Frequency
MHz
Capacitance
pF
Parallel Resistance
Ω
Frequency
MHz
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Typical Performance Curves @ TA = +25°C
MA4P1450 Series
Series Resistance @ 100 MHz vs. Forward Current
Forward Current
Capacitance vs. Frequency and Reverse Bias
Parallel Resistance vs. Frequency and Reverse Bias
Parallel Resistance
Ω
Series Resistance
Ω
Capacitance
pF
Frequency
MHz
Frequency
MHz
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Parameter Symbol Condition MA4P4000
Series
MA4P4300
Series
MA4P7000
Series
MA4P7100
Series
Maximum Series Resistance RS IF = 100 mA 0.5 Ω 1.0 Ω 0.9 Ω 0.5 Ω
Maximum Total Capacitance CT VR = 100 V 2.2 pF 2.0 pF 0.7 pF 1.0 pF
Minimum Parallel Resistance RP VR = 100 V 20 kΩ 50 kΩ 200 kΩ 100 kΩ
Minimum Carrier Lifetime TL IF = 10 mA 20 µs 15 µs 5 µs 2.5 µs
Maximum Forward Voltage VF IF = 100 mA 1.0 V 1.2 V 1.0 V 1.0 V
Maximum Reverse Current IR At max. rated voltage 1 µA 1 µA 1 µA 1 µA
Nominal I-Region Width μ 175 µm 300 µm 175 µm 100 µm
Package
Style Condition
MA4P4000
Series
MA4P4300
Series
MA4P7000
Series
MA4P7100
Series
PDISS θJC PDISS θJC PDISS θJC PDISS θJC
B
Axial Leaded
1/4” Lead Length 12 W 12.5°C/W 10 W 15°C/W 5 W 30°C/W 6 W 25°C/W
No Heatsink 2.5 W 2.5 W 1.5 W 1.5 W
F
MELF Infinite Heatsink 7.5 W 20°C/W 5 W 30°C/W 10 W 15°C/W 11.5 W 13°C/W
Both B and F Single 1 µs pulse 100 kW 100 kW 15 kW 15 kW
Both B and F Single 100 µs 5 kW 0.03°C/W 5 kW 0.03°C/W 300 W 0.5°C/W 300 W 0.5°C/W
MA4P4000 - MA4P7100 Series Electrical Specifications @ TA = +25°C
Maximum Reverse
Voltage Rating
MA4P4000
Series
MA4P4300
Series
MA4P7000
Series
MA4P7100
Series
100 V
MA4P4001B-402
MA4P4001BNM-402
MA4P4001F-1091T
MA4P4301B-402
MA4P4301F-1091T MA4P7001F-1072T MA4P7101B-401T
MA4P7101F-1072T
200 V MA4P4002B-402
MA4P4002F-1091T MA4P4302B-402 MA4P7002B-401T
MA4P7002F-1072T
MA4P7102B-401T
MA4P7102F-1072T
400 V MA4P7104B-401T
MA4P7104F-1072T
600 V MA4P4006F-1091T
MA4P4006B-402 MA4P7006B-401T
MA4P7006F-1072T
Maximum Reverse Voltage Rating ( VR )
*Notes:
1.) “NM” in the base part number signifies non-magnetic package.
2.) “T” suffix denotes tape and reel.
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Typical Performance Curves @ TAMB = +25°C
MA4P4000,MA4P4300, MA4P7000, MA4P7100 Series
Series Resistance at 100 MHz vs. Forward Current
MA4P7000, MA4P7100 Series
Series Resistance at 100 MHz vs. Forward Current
MA4P4000, MA4P4300 Series
Thermal Resistance vs. Pulse Width
MA4P4000, MA4P4300, MA4P7000 & MA4P7100 Series
Forward Current Forward Current
Carrier Lifetime vs. Forward Bias Current
MA4P4000, MA4P4300, MA4P7000 & MA4P7100 Series
Forward Current
Thermal Resistance
°C/W
Pulse Width
Carrier Lifetime
µS
Series Resistance
Ω
Series Resistance
Ω
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Typical Performance Curves @ TAMB = +25°C
MA4P4000, MA4P4300, MA4P7000, MA4P7100 Series
Capacitance vs. Frequency & Reverse Bias
MA4P4000 Series
Capacitance vs. Frequency & Reverse Bias
MA4P4300 Series
Capacitance vs. Frequency & Reverse Bias
MA4P7000 Series
Capacitance vs. Frequency & Reverse Bias
MA4P7100 Series
Frequency
MHz
Capacitance
pF
Frequency
MHz
Capacitance
pF
Capacitance
pF
Frequency
MHz
Frequency
MHz
Capacitance
pF
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Typical Performance Curves @ TAMB = +25°C
MA4P4000, MA4P4300, MA4P7000, MA4P7100 Series
Parallel Resistance vs. Reverse Bias & Frequency
MA4P4300 Series
Parallel Resistance vs. Reverse Bias & Frequency
MA4P4000 Series
Parallel Resistance vs. Reverse Bias & Frequency
MA4P7000 Series
Parallel Resistance vs. Reverse Bias & Frequency
MA4P7100 Series
Parallel Resistance
Ω
Reverse Bias
Volts
Parallel Resistance
Ω
Reverse Bias
Volts
Parallel Resistance
Ω
Reverse Bias
Volts
Reverse Bias
Volts
Parallel Resistance
Ω
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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A
B
C
C
D
Cathode Band
402 Package
(bulk only)
100 pcs/bag
Dimension
INCHES MM
Min. MAX Min. Max.
MA4P4001B-402
MA4P4001BNM-402
MA4P4002B-402
MA4P4006B-402
MA4P4301B-402
MA4P4302B-402
A 0.230 5.84
B 0.140 3.56
C 0.975 24.77
D 0.039 0.041 0.99 1.04
401 Axial Leaded Packages
Case Styles
1091 MELF Surface Mount Packages
1072 Package
(tape and reel only)
1500 or 5000 pcs/reel
specify when ordering
Dimension
INCHES MM
Min. Max. Min. Max.
MA4P1250-1072T
MA4P1250NM-1072T
MA4P7001F-1072T
MA4P7002F-1072T
MA4P7006F-1072T
MA4P7101F-1072T
MA4P7104F-1072T
A 0.080 0.095 2.032 2.413
B 0.115 0.125 2.921 3.175
C 0.008 0.023 0.203 0.584
1091 Package
(tape and reel only)
500 pcs/reel
Dimension
INCHES MM
Min. Max. Min. Max.
MA4P1450-1091T
MA4P4001F-1091T
MA4P4002F-1091T
MA4P4006F-1091T
MA4P4301F-1091T
A 0.138 0.155 3.51 3.94
B 0.181 0.191 4.57 4.85
C 0.011 0.026 0.279 0.660
A
A
B
C
A
Solderable
Surfaces
Cathode
1072 MELF Surface Mount Packages
A
A
B
C
A
Solderable
Surfaces
Cathode
402 Axial Leaded Packages
A
B
C
C
D
Cathode Band
401 Package
(tape and reel only)
500 or 1000 pcs/reel
specify when ordering
Dimension
INCHES MM
Min. Max. Min. Max.
MA4P1200-401T
MA4P1200NM-401T
MA4P7002B-401T
MA4P7006B-401T
MA4P7101B-401T
MA4P7102B-401T
MA4P7104B-401T
A 0.130 3.30
B 0.090 2.29
C 0.975 24.77
D 0.027 0.029 0.69 0.74
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Ordering Information
MELF diodes are available in tape and reel in quantities as shown in table below
Package Style Quantity (7” Reel) Bulk Devices Per Bag
1072T 1500 or 5000 N/A
1091T 500 N/A
MELF Assembly Recommendations
Devices may be soldered using standard 60Sn/40Pb or RoHS compliant solders. Axial leads and solderable
surfaces of MELF devices are tin plated 50 μm thick to ensure an optimum connection.
For recommended Sn/Pb and RoHS soldering profiles See Application Note M538 on the MACOM website.
Dimension
Package Style
1091 1072
inches mm inches mm
A 0.093 2.36 0.150 3.81
B 0.050 1.27 0.050 1.27
C 0.060 1.52 0.100 2.54
B
B
C
A
Circuit Pad Layout for MELF Diodes MELF Internal Construction
Tape and reel information can be found in application note M513 the MACOM website.
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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HIPAX PIN diodes are designed to meet most environmental and electrical requirements and may be ordered
screened to MIL-STD-750 specifications as described in the table below.
TEST METHOD DESCRIPTION/ CONDITIONS
Moisture Resistance 1021 85°C, 85% Relative Humidity, 168 hrs
High Temperature Storage 1031 +175°C , 250 Hours
HTRB 1038 80% of rated VR, 50°C, 96 Hours
Temperature Shock 1051 -65°C to +175°C, 20 Cycles
Fine Leak 1071 Cond. H 1 x 10-7 CC/Sec
Constant Acceleration 2006 20,000 G’s
Solderability 2026 IPC/JDEC J-STD-02
Tension1 2036.3 Cond. A 2 Lbs., 30 Seconds
Lead Fatigue1 2036.3 Cond. E 3 Cycles, 8 oz., 90°,
Note:
1) Test applicable to HIPAX axially leaded devices only.
Environmental Ratings
.060” Min
.060” Min
Axial Leaded HIPAX Assembly Recommendations
Bends on case styles 401 and 402, axially leaded devices, must be made while holding the lead firm and forming
the bend no closer than .060 inches from the body of the part. Bending the lead <0.060 inches from the body of
the part is not recommended and may cause internal damage to the chip. Appropriate fixturing should be used.
Devices may be soldered using standard 60Sn/40Pb or any RoHS compliant solders. Axial leads are tin plated
50 μm thick to ensure an optimum connection.
For recommended Sn/Pb and RoHS soldering profiles see Application Note M538 on the MACOM website.
Case Style 401 & 402
Internal Construction
Case Style 401 & 402
Minimum Bend Distance
Package Style Quantity Per Reel Bulk Devices Per Bag
401T 500 or 1000 (specify qty. when ordering) N/A
402 N/A 100
Ordering Information
Axial leaded diodes are available in tape and reel or bulk in quantities shown in the table below
Passivated Chip
Cathode Band
High Power PIN Diodes
V16
MA4P MELF & HIPAX Series
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Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
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