BAR 63...
Semiconductor Group 1 Edition A01, 23.02.95
Type Marking Ordering code
(tape and reel) Pin configuration
1 2 3 Package 1)
BAR 63 G3 Q62702-A1036 A - C SOT-23
BAR 63-04 G4 Q62702-A1037 A C C/A
BAR 63-05 G5 Q62702-A1038 A A C/C
BAR 63-06 G6 Q62702-A1039 C C A/A
Maximum ratings
Parameter Symbol BAR 63 Unit
Reverse voltage
V
R50 V
Forward current
I
F100 mA
Total Power dissipation TS ≤ 80°C
BAR 63-04,-05,-06 TS ≤ 55°C
P
tot 250
250 mW
Operating temperature range
T
op -55 +150°C °C
Storage temperature range
T
stg -55...+150°C °C
Thermal resistance
Junction-ambient 1)
BAR63
BAR 63-04,-05,-06
R
th JA ≤ 450
≤ 540
K/W
Junction-soldering point
BAR64
BAR63-04,-05,-06
R
th JS ≤ 280
≤ 380
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon PIN Diode
l
PIN diode for high speed switching of RF signals
l
Low forward resistance
l
Very low capacitance
l
For frequencies up to 3 GHz
BAR 63...
Semiconductor Group 2 Edition A01, 23.02.95
Electrical characteristics
at
T
A = 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
R = 5 µA
V
(BR) 50 - - V
Reverse leakage
V
R = 20 V
I
R--50
nA
Forward voltage
I
F = 100 mA
V
F
- 0.95 1.2 V
Diode capacitance
V
R = 0 V,
f
= 100 MHz
C
T- 0.3 - pF
Diode capacitance
V
R = 5 V,
f
= 1 MHz
C
T- 0.21 0.3 pF
Forward resistance
I
F = 5 mA,
f
= 100 MHz
I
F = 10 mA,
f
= 100 MHz
r
f-
-1.2
12
-
Ω
Charge carrier lifetime
I
F = 10 mA,
I
R = 6 mA,
I
R = 3 mA τs-75-ns
Series inductance
L
s- 1.4 - nH
Forward current
I
F
=
f
(
T
A
*T
S
)
BAR63 Forward current
I
F
=
f
(
T
A
*T
S
)
per each Diode BAR63-04,-05,-06
T
T
A
S
I
F
mA
T
T
A
S
T
T
A
S
I
F
T
T
A
S
mA
BAR 63...
Semiconductor Group 3 Edition A01, 23.02.95
Permissible pulse load
R
thJS =
f
(
t
p)
BAR63 Permissible pulse load
I
Fmax /
I
FDC =
f
(
t
p)
BAR63
t
p
thJS
K/W
R
t
p
I
I
Fmax
FDC
_____
Permissible pulse load
R
thJS =
f
(
t
p)
BAR63-04,-05,-06 Permissible pulse load
I
Fmax /
I
FDC =
f
(
t
p)
BAR63-04,-05,-06
R
thJS
t
p
K/W
t
p
I
Fmax
I
FDC
______
BAR 63...
Semiconductor Group 4 Edition A01, 23.02.95
Forward current
I
F=
f
(
V
F)
0.3 0.5 1 1.2
25°C
85°C -40°C
IF
[mA]
VF [V]
10-3
10-2
10
1
100
102
103
10-1
0.8
Forward resistance
r
f=
f
(
I
F
)
f
= 100 MHz Diode capacitance
C
T=
f
(
V
R
)
f
= 1 MHz.
