ZXTN25060BZQTA - DIODES INC

ZXTN25060BZQ

Document number: DS38348 Rev. 1 - 2

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60V NPN MEDIUM POWER TRANSISTOR IN SOT89

Description

This Bipolar Junction Transistor (BJT) is designed to meet the

stringent requirements of automotive applications.

Features

 BVCEX > 150V

 BVCEO > 60V

 BVECO > 6V

 IC = 5A Continuous Collector Current

 VCE(sat) < 70mV @ 1A

 RCE(sat) = 48mΩ for a Low Equivalent On-Resistance

 Very Low Saturation Voltages

 Excellent hFE Characteristics

 6V Reverse Blocking Capability

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT89

 Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.055 grams (Approximate)

Applications

 Motor Driving (including DC fans)

 Solenoid, Relay and Actuator Drivers

 DC-DC Modules

 Power Switches

 MOSFET Gate Drivers

Ordering Information (Notes 4 & 5)

Product

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXTN25060BZQTA

Automotive

1C7

7

12mm

1,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"

and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

C

E

B

Equivalent Circuit

Top View

Pin-Out

Top View

SOT89

C

E

C

B

1C7= Product Type Marking Code

YWW = Date Code Marking

Y = Last Digit of Year (ex: 5 = 2015)

WW = Week Code (01 ~ 53)

1C7

YWW

SOT89

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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

150

V

Collector-Emitter Voltage (Forward Blocking)

VCEX

150

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Collector Voltage (Reverse Blocking)

VECO

6

V

Emitter-Base Voltage

VEBO

7

V

Continuous Collector Current

IC

5

A

Base Current

IB

1

A

Peak Pulse Current

ICM

10

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

PD

1.1

W

(Note 7)

1.8

(Note 8)

2.4

(Note 9)

4.46

Thermal Resistance, Junction to Ambient Air

(Note 6)

RθJA

117

°C/W

(Note 7)

68

(Note 8)

51

(Note 9)

28

Thermal Resistance, Junction to Lead

(Note 10)

RθJL

8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 11)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured

under still air conditions whilst operating in a steady-state.

7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.

8. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.

9. Same as Note 7 measured at t<5 seconds.

10. Thermal resistance from junction to solder-point (on the exposed collector pad).

11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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Thermal Characteristics and Derating Information

020 40 60 80 100 120 140 160

1µ

10µ

100µ

100m 110

10m

100m

1

10

Safe Operating Area

25mm x 25mm

Single Pulse

Tamb=25°C

VCE(sat)

Limited

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

IC Collector Current (A)

VCE Collector-Emitter Voltage (V)

020 40 60 80 100 120 140 160

0.0

0.4

0.8

1.2

1.6

2.0

2.4

25mm x 25mm

50mm x 50mm

15mm x 15mm

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

BV(BR)CEV=150V

BV(BR)CEO=60V

Failure may occur

in this region

Tamb=25°C

VCE Collector-Emitter Voltage (V)

IC Collector Current (A)

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Thermal Characteristics and Derating Information (continued)

100µ 1m 10m 100m 110 100 1k

0

20

40

60

80

100

120

100µ 1m 10m 100m 110 100 1k

1

10

100

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40

50

60

70

100µ 1m 10m 100m 110 100 1k

1

10

100

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40

50

100µ 1m 10m 100m 110 100 1k

1

10

100

Tamb=25°C

see note (a)

D=0.5

D=0.2

D=0.05

D=0.1

Single Pulse

Tamb=25°C

15mm x 15mm

Tamb=25°C

see note (b)

D=0.5

D=0.2

D=0.05

D=0.1

Single Pulse

Tamb=25°C

25mm x 25mm

Tamb=25°C

see note (c)

D=0.5

D=0.2

D=0.05

D=0.1

Single Pulse

Thermal Resistance (°C/W)

Pulse Width (s)

Transient Thermal Impedance

Single Pulse

Tamb=25°C

50mm x 50mm

Maximum Power (W)

Pulse Power Dissipation

Pulse Width (s)

Transient Thermal Impedance Pulse Power Dissipation

Pulse Width (s)

Transient Thermal Impedance Pulse Power Dissipation

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

150

190

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage (Forward

Blocking)

BVCEX

150

190

—

V

IC = 100µA, RBE <1kΩ or

-1V < VBE <0.25V

Collector-Emitter Breakdown Voltage (Note 12)

BVCEO

60

80

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7

8.0

—

V

IE = 100µA

Emitter-Collector Breakdown Voltage (Reverse

Blocking)

BVECX

6

8

—

V

IE = 100µA, RBC <1kΩ or

<0.25V > VBC >0.25V

Emitter-Collector Breakdown Voltage (Base Open)

BVECO

6

7

—

V

IE = 100µA

Collector-Base Cutoff Current

ICBO

—

<1

50

20

nA

µA

VCB = 120V

VCB = 120V, TA = +100°C

Collector-Emitter Cutoff Current

ICEX

—

100

nA

VCE = 120V, RBE <1kΩ or

-1V < VBE <0.25V

Emitter-Base Cutoff Current

IEBO

—

<1

50

nA

VEB = 5.6V

Collector-Emitter Saturation Voltage (Note 12)

VCE(sat)

—

55

70

185

240

70

90

230

305

mV

IC = 1A, IB = 100mA

IC = 1A, IB = 50mA

IC = 4A, IB = 400mA

IC = 5A, IB = 500mA

Base-Emitter Saturation Voltage (Note 12)

VBE(sat)

—

1,020

1,100

mV

IC = 5A, IB = 500mA

Base-Emitter Turn-On Voltage (Note 12)

VBE(on)

—

960

1,050

mV

IC = 5A, VCE = 2V

DC Current Gain (Note 12)

hFE

100

90

45

—

200

180

90

20

300

—

IC = 10mA, VCE = 2V

IC = 1A, VCE = 2V

IC = 2A, VCE = 50V

IC = 5A, VCE = 5V

Transitional Frequency

fT

—

185

—

MHz

IC = 100mA, VCE = 5V

f=100MHz

Output Capacitance

Cobo

—

11.5

20

pF

VCB= 10V, f=1MHz

Delay Time

td

—

16

—

ns

VCC = 10V,

ICC = 500mA

IB1 = - IB2 = 50mA

Rise Time

tr

—

15

—

ns

Storage Time

ts

—

509

—

ns

Fall Time

tf

—

57

—

ns

Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 110

10m

100m

1

10m 100m 110

0.0

0.1

0.2

0.3

0.4

0.5

1m 10m 100m 110

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m 110

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 110

0.2

0.4

0.6

0.8

1.0

0

25

50

75

100

125

150

175

200

225

250

275

300

325

350

375

IC/IB=100

VCE(SAT) v IC

Tamb=25°C

IC/IB=50

IC/IB=20

IC/IB=10

VCE(SAT) (V)

IC Collector Current (A)

150°C

VBE(SAT) v IC

IC/IB=10

100°C

25°C

-55°C

VCE(SAT) (V)

IC Collector Current (A)

150°C

hFE v IC

VCE=2V

-55°C

25°C

100°C

Normalised Gain

IC Collector Current (A)

150°C

25°C

VCE(SAT) v IC

IC/IB=10

100°C

-55°C

VBE(SAT) (V)

IC Collector Current (A)

150°C

VBE(ON) v IC

VCE=2V

100°C

25°C

-55°C

VBE(ON) (V)

IC Collector Current (A)

Typical Gain (hFE)

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT89

Dim

Min

Max

Typ

A

1.40

1.60

1.50

B

0.50

0.62

0.56

B1

0.42

0.54

0.48

c

0.35

0.43

0.38

D

4.40

4.60

4.50

D1

1.62

1.83

1.733

D2

1.61

1.81

1.71

E

2.40

2.60

2.50

E2

2.05

2.35

2.20

e

-

1.50

H

3.95

4.25

4.10

H1

2.63

2.93

2.78

L

0.90

1.20

1.05

L1

0.327

0.527

0.427

z

0.20

0.40

0.30

All Dimensions in mm

Dimensions

Value

(in mm)

C

1.500

G

0.244

X

0.580

X1

0.760

X2

1.933

Y

1.730

Y1

3.030

Y2

1.500

Y3

0.770

Y4

4.530

H1

EH

D1

B

e

c

L

A

D

8° (4X)

D2

E2

z

L1

R0.200

B1

Y4

X2

Y1

X

YY2

Y3

G

C

X1

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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