1ED020I12FAXUMA2 - INFINEON TECHNOLOGIES AG

1. Product profile

1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal

matching circuit in a 6-pin SOT363 plastic SMD package.

1.2 Features and benefits

Internally matched to 50 

A gain of 26.4 dB at 2150 MHz

Output power at 1 dB gain compression = 8 dBm

Supply current = 21.7 mA at a supply voltage of 5.0 V

Reverse isolation > 37 dB up to 2150 MHz

Good linearity with low second order and third order products

Noise figure = 3.6 dB at 950 MHz

Unconditionally stable (K > 1)

No output inductor required

1.3 Applications

LNB IF amplifiers

General purpose low noise wideband amplifier for frequencies between

DC and 2.2 GHz

2. Pinning information

BGA2867

MMIC wideband amplifier

Rev. 4 — 13 July 2015 Product data sheet

Table 1. Pinning

Pin Description Simplified outline Graphic symbol

2, 5 GND2

3RF_OUT

4 GND1

6RF_IN

132

sym052

2, 5

Product data sheet Rev. 4 — 13 July 2015 2 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

Table 2. Ordering information

Type number Package

Name Description Version

BGA2867 - plastic surface-mounted package; 6 leads SOT363

Table 3. Marking

Type number Marking code Description

BGA2867 LP* * = - : made in Hong Kong

* = p : made in Hong Kong

* = W : made in China

* = t : made in Malaysia

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage RF input AC coupled 0.5 +7.0 V

ICC supply current - 36 mA

Ptot total power dissipation Tsp = 90 C-200mW

Tstg storage temperature 40 +125 C

Tjjunction temperature - 125 C

Pdrive drive power - +10 dBm

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to

solder point Ptot = 200 mW; Tsp =90C 300 K/W

Table 6. Characteristics

VCC = 5 V; ZS = ZL = 50



; Pi =



34 dBm; Tamb = 25



C; measured on demo board; unless otherwise specified .

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 4.5 5.0 5.5 V

ICC supply current 20.1 21.7 23.2 mA

Product data sheet Rev. 4 — 13 July 2015 3 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

Gppower gain f = 250 MHz 25.8 26.3 26.9 dB

f = 950 MHz 26.4 27.1 27.8 dB

f = 2150 MHz 24.9 26.4 27.9 dB

RLin input return loss f = 250 MHz 19 21 23 dB

f = 950 MHz 182022dB

f = 2150 MHz 19 25 31 dB

RLout output return loss f = 250 MHz 13 17 21 dB

f = 950 MHz 171819dB

f = 2150 MHz 12 14 17 dB

ISL isolation f = 250 MHz 44 64 84 dB

f = 950 MHz 444648dB

f = 2150 MHz 34 37 39 dB

NF noise figure f = 250 MHz 3.2 3.7 4.2 dB

f = 950 MHz 3.2 3.6 4.1 dB

f = 2150 MHz 3.3 3.8 4.2 dB

B3dB 3 dB bandwidth 3 dB below gain at 1 GHz 2.8 3 3.2 GHz

K Rollett stability factor f = 250 MHz 29 36 38

f = 950 MHz 3.5 4.5 4.5

f = 2150 MHz 1 1.8 2.8

PL(sat) saturated output power f = 250 MHz 8 9 9 dBm

f = 950 MHz 7 8 10 dBm

f = 2150 MHz 5 6 7 dBm

PL(1dB) output power at 1 dB gain compression f = 250 MHz 6 7 8 dBm

f = 950 MHz 5 7 8 dBm

f = 2150 MHz 4 5 6 dBm

IP3Iinput third-order intercept point Pdrive =40 dBm (for each tone)

f1= 250 MHz; f2= 251 MHz 753dBm

f1= 950 MHz; f2= 951 MHz 11 86dBm

f1=2150MHz; f

2=2151MHz 16 13 10 dBm

IP3Ooutput third-order intercept point Pdrive =40 dBm (for each tone)

f1= 250 MHz; f2=251MHz 192123dBm

f1= 950 MHz; f2= 951 MHz 17.5 19.5 21.5 dBm

f1=2150MHz; f

2= 2151 MHz 11 14 17 dBm

PL(2H) second harmonic output power Pdrive =37 dBm

f1H = 250 MHz; f2H =500MHz 63 61 59 dBm

f1H = 950 MHz; f2H =1900MHz 51 50 48 dBm

IM2 second-order intermodulation distance Pdrive =40 dBm (for each tone)

f1= 250 MHz; f2=251MHz 495153dBc

f1= 950 MHz; f2=951MHz 495152dBc

Table 6. Characteristics …continued

VCC = 5 V; ZS = ZL = 50



; Pi =



34 dBm; Tamb = 25



C; measured on demo board; unless otherwise specified .

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 4 — 13 July 2015 4 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

8. Application information

Figure 1 shows a typical application circuit for the BGA2867 MMIC. The device is

internally matched to 50 , and therefore does not need any externa l matching. The value

of the input and outpu t DC blocking capacito rs C2 and C3 should not be mor e than 100 pF

for applications above 100 MHz. However, when the de vice is operated below 100 MHz,

the capacitor value should be increased.

The location o f the 470 pF su pply decoupling ca pacito r (Cdec) can be pr ecisely chosen for

optimum performance.

The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to

the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes

as close as possible to the MMIC.

8.1 Application examples

8.2 Tables

Fig 1. Typical application circ uit

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The MMIC is very suitable as IF amplifier in e.g. LNB’s.

The excellent wideband characteristics make it an easy

building block.

As second amplifier after an LNA, the MMIC offers an

easy matching, low noise solution.

Fig 2. Application as IF amplifie r Fig 3. Application as RF amplifier

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from RF

circuit

oscillator

wideband

amplifier to IF circuit

or demodulator

mixer

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antenna

oscillator

wideband

amplifier

LNA to IF circuit

or demodulator

mixer

Table 7. Supply current over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

ICC supply current VCC = 4.5 V 21.90 20.10 18.60 mA

VCC = 5.0 V 23.50 21.70 20.10 mA

VCC = 5.5 V 25.00 23.20 21.60 mA

Product data sheet Rev. 4 — 13 July 2015 5 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

Table 8. Second harmonic output power over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

PL(2H) second harmonic output power f = 250 MHz; Pdrive =37 dBm

VCC = 4.5 V 75 67 62 dBm

VCC =5.0V 63 61 58 dBm

VCC =5.5V 59 58 56 dBm

f = 950 MHz; Pdrive =37 dBm

VCC = 4.5 V 51 51 50 dBm

VCC =5.0V 50 50 49 dBm

VCC =5.5V 49 49 48 dBm

Table 9. Input power at 1 dB gain compression over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

Pi(1dB) input power at 1 dB gain compression f = 250 MHz

VCC = 4.5 V 19 19 19 dBm

VCC =5.0V 18 19 19 dBm

VCC =5.5V 18 18 19 dBm

f = 950 MHz

VCC = 4.5 V 20 20 20 dBm

VCC =5.0V 19 20 20 dBm

VCC =5.5V 19 19 20 dBm

f = 2150 MHz

VCC = 4.5 V 21 22 23 dBm

VCC =5.0V 21 22 23 dBm

VCC =5.5V 21 22 23 dBm

Product data sheet Rev. 4 — 13 July 2015 6 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

Table 10. Output power at 1 dB gain compress ion over temperature and sup ply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

PL(1dB) output power at 1 dB gain compression f = 250 MHz

VCC = 4.5 V 7 6 5 dBm

VCC =5.0V 7 7 6 dBm

VCC =5.5V 8 8 7 dBm

f = 950 MHz

VCC = 4.5 V 6 6 5 dBm

VCC =5.0V 7 7 6 dBm

VCC =5.5V 8 7 6 dBm

f = 2150 MHz

VCC = 4.5 V 5 4 2 dBm

VCC =5.0V 6 5 3 dBm

VCC =5.5V 7 5 3 dBm

Table 11. Saturated output power over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

PL(sat) saturated output power f = 250 MHz

VCC = 4.5 V 8 8 8 dBm

VCC =5.0V 10 9 8 dBm

VCC =5.5V 10 10 9 dBm

f = 950 MHz

VCC = 4.5 V 8 8 7 dBm

VCC =5.0V 988dBm

VCC =5.5V 10 9 8 dBm

f = 2150 MHz

VCC = 4.5 V 6 5 4 dBm

VCC =5.0V 764dBm

VCC =5.5V 865dBm

Product data sheet Rev. 4 — 13 July 2015 7 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

Table 12. Second-order intermodulation distance over temperature and supply vo ltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

IM2 second-order intermodulation distance f1= 250 MHz;

f2= 251 MHz;

Pdrive =40 dBm

VCC =4.5 V 434651dBc

VCC =5.0V 485158dBc

VCC =5.5V 525669dBc

f1= 950 MHz;

f2= 951 MHz;

Pdrive =40 dBm

VCC =4.5 V 404555dBc

VCC =5.0V 455163dBc

VCC =5.5V 506052dBc

Table 13. Output third-orde r intercept point over temperatu re and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

IP3Ooutput third-order intercept point f1=250MHz;

f2=251MHz;

Pdrive =40 dBm

VCC =4.5 V 21 19 18 dBm

VCC =5.0V 23 21 20 dBm

VCC =5.5V 24 23 21 dBm

f1=950MHz;

f2=951MHz;

Pdrive =40 dBm

VCC =4.5 V 18 17 16 dBm

VCC = 5.0 V 20.5 19.5 18.5 dBm

VCC =5.5V 21 20 18 dBm

f1=2150MHz;

f2=2151MHz;

Pdrive =40 dBm

VCC =4.5 V 14 13 11 dBm

VCC =5.0V 16 14 12 dBm

VCC =5.5V 17 15 12 dBm

Table 14. 3 dB bandwidth over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 +25 +85

B3dB 3 dB bandwidth VCC = 4.5 V 3.09 2.98 2.84 GHz

VCC = 5.0 V 3.11 3.00 2.91 GHz

VCC = 5.5 V 3.13 3.01 2.93 GHz

Product data sheet Rev. 4 — 13 July 2015 8 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

9. Test information

[1] For decoupling a decoupling capacitor (Cdec) is used on one of the positions of P5 to P24. The results mentioned in this data sheet have

been obtained using the decoupling capacitor Cdec on position P22.

For decoupling a decoupling capacitor (Cdec) is used on one of the positions of P5 to P24. The

results mentioned in this data sheet have been obtained using the decoupling capacitor Cdec on

position P22. The distance between the center of pin 1 and the center of position P22 is 7.43 mm.

Fig 4. PCB layout and demo board with compo nents

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3

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3

3

3

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3

3

3

3

3

3

3

3

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Table 15 . List of components used for the typical application

Component Description Value Dimensions Remarks

C1, C2 multilayer ceramic chip capacitor 470 pF 0603 X7R RF coupling capacitor

P5 to P24 [1] position for multilayer ceramic chip

capacitor Cdec

470 pF 0603 X7R RF decoupling capacitor

IC1 BGA2867 MMIC - SOT363

Product data sheet Rev. 4 — 13 July 2015 9 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

10. Package outline

Fig 5. Package outline SOT363

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

04-11-08

06-03-16

Product data sheet Rev. 4 — 13 July 2015 10 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

11. Abbreviations

12. Revision history

Table 16. Abbreviations

Acronym Description

IF Intermediate Frequency

LNA Low-Noise Amplifier

LNB Low-Noise Block converter

PCB Printed-Circuit Board

SMD Surface Mounted Device

Table 17. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGA2867 v.4 20150713 Product data sheet - BGA2867 v.3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BGA2867 v.3 20130827 Product data sheet - BGA2867 v.2

BGA2867 v.2 20120925 Product data sheet - BGA2867 v.1

BGA2867 v.1 20120312 Product data sheet - -

Product data sheet Rev. 4 — 13 July 2015 11 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or comple teness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

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Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

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Applications — Applications that are described herein for any of these

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Customers are responsible for the design and ope ration of their applications

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customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] data sheet Production This document contain s the product specification.

Product data sheet Rev. 4 — 13 July 2015 12 of 13

NXP Semiconductors BGA2867

MMIC wideband amplifier

Export control — This document as well as the item(s) described herein

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the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

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In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such au tomotive applications, use and specifi cations, and (b)

whenever customer uses the product for automotive applications beyond

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liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

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Translations — A non-English (translated) versio n of a document is for

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between the translated and English versions.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGA2867

MMIC wideband amplifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 13 July 2015

Document identifier: BGA2867

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2

8 Application information. . . . . . . . . . . . . . . . . . . 4

8.1 Application examples . . . . . . . . . . . . . . . . . . . . 4

8.2 Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13