SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
Copyright 1986, Texas Instruments Incorporated
Revision Information
3–1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
•Dual Circuits Capable of Driving
High-Capacitance Loads at High Speeds
•Output Supply Voltage Range up to 24 V
•Low Standby Power Dissipation
description
The SN75372 is a dual NAND gate interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides high current and voltage
levels necessary to drive large capacitive loads at
high speeds. The device operates from a VCC1 of
5 V and a VCC2 of up to 24 V.
The SN75372 is characterized for operation from
0°C to 70°C.
schematic (each driver)
VCC1 VCC2
To Other
Driver
To Other
Driver
Output Y
GND
Input A
Enable E
1Y
7
2Y
6
E2EN
1A 1
2A 3
logic symbol†
TTL/MOS
1
2
3
4
8
7
6
5
1A
E
2A
GND
VCC1
1Y
2Y
VCC2
D OR P PACKAGE
(TOP VIEW)
†This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC1 (see Note 1) –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage range, VCC2 –0.5 V to 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak output current, VO (tw < 10 ms, duty cycle < 50%) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTE 1: Voltage values are with respect to network GND.
DISSIPATION RATING TABLE
PACKAGE
T
A
= 25°CDERATING FACTOR T
A
= 70°C
PACKAGE
A
POWER RATING ABOVE TA = 25°C
A
POWER RATING
D 725 mW 5.8 mW/°C 464 mW
P1000 mW 8.0 mW/°C 640 mW
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, VCC1 4.75 5 5.25 V
Supply voltage, VCC2 4.75 20 24 V
High-level input voltage, VIH 2 V
Low-level input voltage, VIL 0.8 V
High-level output current, IOH –10 mA
Low-level output current, IOL 40 mA
Operating free-air temperature, TA0 70 °C
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of VCC1, VCC2, and operating free-air
temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
VIK Input clamp voltage II = –12 mA –1.5 V
VOH
High level out
p
ut voltage
VIL = 0.8 V, IOH = –50 µA VCC2–1.3 VCC2–0.8
V
V
OH
High
-
le
v
el
o
u
tp
u
t
v
oltage
VIL = 0.8 V, IOH = –10 mA VCC2–2.5 VCC2–1.8
V
VIH = 2 V, IOL = 10 mA 0.15 0.3
VOL Low-level output voltage VCC2 = 15 V to 24 V,
IOL = 40 mA VIH = 2 V, 0.25 0.5 V
VF
Out
p
ut clam
p
diode forward voltage
VI=0
IF=20mA
V
V
F
O
u
tp
u
t
clamp
-
diode
for
w
ard
v
oltage
V
I =
0
,
I
F =
20
mA
.
V
II
Input current at maximum input
VI=55V
mA
I
Ivoltage
V
I =
5
.
5
V
mA
IIH
High level in
p
ut current
Any A
VI=24V
40
µA
I
IH
High
-
le
v
el
inp
u
t
c
u
rrent
Any E
V
I =
2
.
4
V
80 µ
A
IIL
Low level in
p
ut current
Any A
VI=04V
–1 –1.6
mA
I
IL
Lo
w-
le
v
el
inp
u
t
c
u
rrent
Any E
V
I =
0
.
4
V
–2 –3.2
mA
ICC1(H) Supply current from VCC1, both
outputs high V
CC1
= 5.25 V, V
CC2
= 24 V, 2 4 mA
ICC2(H) Supply current from VCC2, both
outputs high
CC1 ,
All inputs at 0 V,
CC2 ,
No load 0.5 mA
ICC1(L) Supply current from VCC1, both
outputs low V
CC1
= 5.25 V, V
CC2
= 24 V, 16 24 mA
ICC2(L) Supply current from VCC2, both
outputs low
CC1 ,
All inputs at 5 V,
CC2 ,
No load 7 13 mA
ICC2(S) Supply current from VCC2, standby
condition VCC1 = 0,
All inputs at 5 V, VCC2 = 24 V,
No load 0.5 mA
†All typical values are at VCC1 = 5 V, VCC2 = 20 V, and TA = 25°C.
switching characteristics, VCC1 = 5 V, VCC2 = 20 V, TA = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tDLH Delay time, low-to-high-level output 20 35 ns
tDHL Delay time, high-to-low-level output 10 20 ns
tTLH T ransition time, low-to-high-level output
CL= 390
p
F
RD=10Ω
See Figure 1
20 30 ns
tTHL T ransition time, high-to-low-level output
C
L =
390
pF
,
R
D =
10
Ω
,
See
Fig
u
re
1
20 30 ns
tPLH Propagation delay time, low-to-high-level output 10 40 65 ns
tPHL Propagation delay time, high-to-low-level output 10 30 50 ns
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
10%
5 V
2.4 V
VCC1
TEST CIRCUIT
Input
GND
VCC2
Pulse
Generator
(see Note A) Output
CL = 390 pF
(see Note B)
20 V
RD
Input
Output
VOLTAGE WAVEFORMS
≤ 10 ns
90%
1.5 V 0.5 µs
tDHL tTLH
VCC2–3 V
2 V
0 V
VOH
≤ 10 ns
90%
1.5 V 10%
tPHL tPHL
tDLH
tTHL
VCC2–3 V 2 V VOL
3 V
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, ZO ≈ 50 Ω.
B. CL includes probe and jig capacitance.
Figure 1. Test Circuit and Voltage W aveforms, Each Driver
TYPICAL CHARACTERISTICS
–1
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
–10 –100
0.3
0.2
0.1
00204060
0.4
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.5
80 100
VCC2–0.5
VCC2–1
VCC2–1.5
VCC2–2
VCC2–2.5
VCC2–3
VCC1 = 5 V
VCC2 = 20 V
VI = 0.8 V
TA = 25°C
TA = 70°C
TA = 0°C
V0H – High-Level Output Voltage – V
VOH
IOL – Low-Level Output Current – mA
VCC1 = 5 V
VCC2 = 20 V
VI = 2 V
TA = 70°C
TA = 0°C
VOL – Low-Level Output Voltage – V
VOL
IOH – High-Level Output Current – mA
VCC2
– 0.01 – 0.1
Figure 2 Figure 3
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
10 20 40 100 400 1000
f – Frequency – kHz
POWER DISSIPATION (BOTH DRIVERS)
vs
FREQUENCY
200
400
200
0
800
1000
1200
600
12
8
4
00 0.5 1 1.5
16
20
VOLTAGE TRANSFER CHARACTERISTICS
24
2 2.5
VI – Input Voltage – V
V) – Output Voltage – V
VO
VCC1 = 5 V
VCC2 = 20 V
No Load
TA = 25°C
VCC1 = 5 V
VCC2 = 20 V
Input: 3-V Square W ave
50% Duty Cycle
TA = 25°C
CL = 600 pF
CL = 1000 pF
CL = 2000 pF
CL = 4000 pF
CL = 400 pF
PT – Power Dissipation – mWPD
Allowable in P Package Only
Figure 4 Figure 5
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
100
80
20
00 102030405060
High-to-Low-Level Output – ns
140
180
200
70 80
60
160
120
40
TA – Free-Air Temperature – °C
kSVR – Propagation Delay Time,
tPLH
Low-to-High-Level Output – ns
kSVR – Propagation Delay Time,
tPHL
TA – Free-Air Temperature – °C
100
80
20
0
140
180
200
60
160
120
40
0 1020304050607080
C
L
= 50 pF
CL = 200 pF
CL = 1000 pF
CL = 2000 pF
CL = 4000 pF
VCC1 = 5 V
VCC2 = 20 V
RD = 10 Ω
See Figure 1
CL = 4000 pF
CL = 2000 pF
CL = 1000 pF
VCC1 = 5 V
VCC2 = 20 V
RD = 10 Ω
See Figure 1
CL = 200 pF CL = 390 pF
CL = 50 pF
CL = 390 pF
Figure 6 Figure 7
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0 5 10 15
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
VCC2 SUPPLY VOLTAGE
20 25
100
80
20
0
140
180
200
60
160
120
40
Low-to-High-Level Output – ns
VCC2 – Supply Voltage – V
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
VCC2 SUPPLY VOLTAGE
100
80
20
0
140
180
200
60
160
120
40
0 5 10 15 20 25
VCC2 – Supply Voltage – V
– Propagation Delay Time,
tPLH
VCC1 = 5 V
RD = 10 Ω
TA = 25°C
See Figure 1
CL = 2000 pF
CL = 1000 pF
CL = 200 pF CL = 390 pF
CL = 50 pF
VCC1 = 5 V
RD = 10 Ω
TA = 25°C
See Figure 1 CL = 4000 pF
CL = 2000 pF
CL = 1000 pF
CL = 390 pF
CL = 200 pF
CL = 50 pF
CL = 4000 pF
High-to-Low-Level Output – ns
– Propagation Delay Time,
tPLH
Figure 8 Figure 9
0 1000 2000 3000 4000
VCC1 = 5 V
VCC2 = 20 V
TA = 25°C
See Figure 1
Low-to-High-Level Output – ns
100
80
20
0
140
180
200
60
160
120
40
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
RD = 10 Ω
RD = 0
RD = 24 Ω
100
80
20
0
140
180
200
60
160
120
40
0 1000 2000 3000 4000
CL – Load Capacitance – pF
VCC1 = 5 V
VCC2 = 20 V
TA = 25°C
See Figure 1
RD = 24 Ω
RD = 10 Ω
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
LOAD CAPACITANCE
RD = 0
kSVR – Propagation Delay Time,
tPLH
High-to-Low-Level Output – ns
kSVR – Propagation Delay Time,
tPLH
Figure 10 Figure 11
NOTE: For RD = 0, operation with CL > 2000 pF violates absolute maximum current rating.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
THERMAL INFORMATION
power dissipation precautions
Significant power may be dissipated in the SN75372 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 5 shows the power dissipated in a typical SN75372
as a function of load capacitance and frequency. Average power dissipated by this driver is derived from the
equation
PT(AV) = PDC(AV) + PC(AV) = PS(AV)
where PDC(AV) is the steady-state power dissipation with the output high or low, PC(AV) is the power level during
charging or discharging of the load capacitance, and PS(AV) is the power dissipation during switching between
the low and high levels. None of these include energy transferred to the load, and all are averaged over a full
cycle.
The power components per driver channel are
PC(AV)
[
CV
2
Cf
t
HL tLH
tH
tL
T = 1/f
Figure 12. Output Voltage Waveformwhere the times are as defined in Figure 14.
PDC(AV) =PHtH + PLtL
T
PS(AV) = PLHtLH + PHLtHL
T
PL, PH, PLH, and PHL are the respective instantaneous levels of power dissipation, C is the load capacitance.
VC is the voltage across the load capacitance during the charge cycle shown by the equation
VC = VOH – VOL
PS(AV) may be ignored for power calculations at low frequencies.
In the following power calculation, both channels are operating under identical conditions:
VOH =19.2 V and VOL = 0.15 V with VCC1 = 5 V, VCC2 = 20 V, VC = 19.05 V, C = 1000 pF, and the
duty cycle = 60%. At 0.5 MHz, PS(AV) is negligible and can be ignored. When the output voltage is high, ICC2
is negligible and can be ignored.
On a per-channel basis using data sheet values,
PDC(AV)
+ƪ
(5 V)
ǒ
2mA
2
Ǔ
)
(20 V)
ǒ
0mA
2
Ǔ
ƫ
(0.6)
)ƪ
(5 V)
ǒ
16 mA
2
Ǔ)
(20 V)
ǒ
7mA
2
Ǔ
ƫ
(0.4)
PDC(AV) = 47 mW per channel
Power during the charging time of the load capacitance is
PC(AV) = (1000 pF) (19.05 V)2 (0.5 MHz) = 182 mW per channel
Total power for each driver is
PT(AV) = 47 mW + 182 mW = 229 mW
and total package power is
PT(AV) = (229) (2) = 458 mW.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance
in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup
resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching
an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (Ciss) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the
combination of Ciss and the pullup resistor is shown in Figure 12(b).
5 V
748
3
5
1
2
6
V0H – VOL – Gate Voltage – V
VOH
TLC555P
1/2 SN75447
470 Ω
48 V
M
VOL
t – Time – µs
(b)
(a)
IRF151
4
3
2
1
00 0.5 1 1.5 2 2.5 3
Figure 13. Power MOSFET Drive Using SN75447
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
A faster, more efficient drive circuit uses an active pullup as well as an active pulldown output configuration,
referred to as a totem-pole output. The SN75372 driver provides the high speed, totem-pole drive desired in
an application of this type, see Figure 13(a). The resulting faster switching speeds are shown in Figure 13(b).
5 V
TLC555P
1/2 SN75372
M
t – Time – µs
(b)
(a)
IRF151
48 V
4
3
2
1
00 0.5 1 1.5 2 2.5 3
V0H – VOL – Gate Voltage – V
VOH VOL
748
3
5
12
6
Figure 14. Power MOSFET Drive Using SN75372
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation
Ipk
+
VC
tr
where C is the capacitive load, and tr is the desired drive time. V is the voltage that the capacitance is charged
to. In the circuit shown in Figure 13(a), V is found by the equation
V = VOH – VOL
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 13(a) is
IPK
+
(3
*
0)4(10
*
9)
100(10
*
9)
+
120 mA
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a VCC of 5 V, and assuming worst-cast conditions, the gate drive voltage is 3 V.
For applications in which the full voltage of VCC2 must be supplied to the MOSFET gate, the SN75374 quad
MOSFET driver should be used.
3–10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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Copyright 1998, Texas Instruments Incorporated