IS25LP064A
64Mb
3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD
I/O QPI DTR INTERFACE
DATA SHEET
IS25LP064A
Integrated Silicon Solution, Inc.- www.issi.com 2
Rev. A11
11/02/2018
FEATURES
Industry Standard Serial Interface
- IS25LP064A: 64Mbit/8Mbyte
- 256 bytes per Programmable Page
- Supports standard SPI, Fast, Dual, Dual
I/O, Quad, Quad I/O, SPI DTR, Dual I/O
DTR, Quad I/O DTR, and QPI
- Supports Double Transfer Rate (DTR)
- Supports Serial Flash Discoverable
Parameters (SFDP)(4)
High Performance Serial Flash (SPI)
- 133Mhz Fast Read at Vcc=2.7V to 3.6V
- 104Mhz Fast Read at Vcc=2.3V to 3.6V
- 532MHz equivalent at QPI operation
- 50MHz Normal Read
- DTR (Dual Transfer Rate) up to 66MHz
- Selectable dummy cycles
- Configurable drive strength
- Supports SPI Modes 0 and 3
- More than 100,000 erase/program cycles
- More than 20-year data retention
Flexible & Efficient Memory Architecture
- Chip Erase with Uniform Sector/Block
Erase (4/32/64 Kbyte)
- Program 1 to 256 bytes per page
- Program/Erase Suspend & Resume
Efficient Read and Program modes
- Low Instruction Overhead Operations
- Continuous Read 8/16/32/64-Byte burst
Wrap
- Selectable burst length
- QPI for reduced instruction overhead
Low Power with Wide Temp. Ranges
- Single 2.3V to 3.6V Voltage Supply
- 5 mA Active Read Current (typ.)
- 10 µA Standby Current (typ.)
- 5 µA Deep Power Down (typ.)
- Temp Grades:
Extended: -40°C to +105°C
Auto Grade (A3): -40°C to +125°C
Advanced Security Protection
- Software and Hardware Write Protection
- Power Supply lock protect
- 4x256-Byte dedicated security area
with OTP user-lockable bits
- 128 bit Unique ID for each device (Call
Factory)
Industry Standard Pin-out & Packages(1),(2)
- B = 8-pin SOIC 208mil
- T = 8-contact USON 4x3mm
- E = 8-contact XSON 4x4mm
- K = 8-contact WSON 6x5mm
- L = 8-contact WSON 8x6mm
- M = 16-pin SOIC 300mil(3)
- G= 24-ball TFBGA 6x8mm 4x6(3)
- H = 24-ball TFBGA 6x8mm 5x5 (Call
Factory)(3)
- KGD (Call Factory)
Notes:
1. Call Factory for other package options available.
2. For the RESET# pin option instead of HOLD# pin, call
Factory.
3. For the dedicated RESET# option, see the Ordering
Information
64Mb
3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI &
QUAD I/O QPI DTR INTERFACE
IS25LP064A
Integrated Silicon Solution, Inc.- www.issi.com 3
Rev. A11
11/02/2018
GENERAL DESCRIPTION
The IS25LP064A Serial Flash memory offers a versatile storage solution with high flexibility and performance in
a simplified pin count package. ISSI’s “Industry Standard Serial Interface” Flash are for systems that require
limited space, a low pin count, and low power consumption. The device is accessed through a 4-wire SPI Interface
consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins,
which can also be configured to serve as multi-I/O (see pin descriptions).
The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock
frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to
66Mbytes/s of data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate)
commands that transfer addresses and read data on both edges of the clock. These transfer rates can outperform
16-bit Parallel Flash memories allowing for efficient memory access to support XIP (execute in place) operation.
The memory array is organized into programmable pages of 256-bytes. This family supports page program mode
where 1 to 256 bytes of data are programmed in a single command. QPI (Quad Peripheral Interface) supports 2-
cycle instruction further reducing instruction times. Pages can be erased in groups of 4Kbyte sectors, 32Kbyte
blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector and block architecture allows for a high degree
of flexibility so that the device can be utilized for a broad variety of applications requiring solid data retention.
GLOSSARY
Standard SPI
In this operation, a 4-wire SPI Interface is utilized, consisting of Serial Data Input (SI), Serial Data Output (SO),
Serial Clock (SCK), and Chip Enable (CE#) pins. Instructions are sent via the SI pin to encode instructions,
addresses, or input data to the device on the rising edge of SCK. The SO pin is used to read data or to check the
status of the device. This device supports SPI bus operation modes (0,0) and (1,1).
Multi I/O SPI
Multi-I/O operation utilizes an enhanced SPI protocol to allow the device to function with Dual Output, Dual Input
and Output, Quad Output, and Quad Input and Output capability. Executing these instructions through SPI mode
will achieve double or quadruple the transfer bandwidth for READ and PROGRAM operations.
QPI
The device supports Quad Peripheral Interface (QPI) operations only when the device is switched from
Standard/Dual/Quad SPI mode to QPI mode using the enter QPI (35h) instruction. The typical SPI protocol
requires that the byte-long instruction code being shifted into the device only via SI pin in eight serial clocks. The
QPI mode utilizes all four I/O pins to input the instruction code thus requiring only two serial clocks. This can
significantly reduce the SPI instruction overhead and improve system performance. Only QPI mode or
SPI/Dual/Quad mode can be active at any given time. Enter QPI (35h) and Exit QPI (F5h) instructions are used
to switch between these two modes, regardless of the non-volatile Quad Enable (QE) bit status in the Status
Register. Power Reset or Hardware/Software Reset will return the device into the standard SPI mode. SI and SO
pins become bidirectional I/O0 and I/O1, and WP# and HOLD# pins become I/O2 and I/O3 respectively during
QPI mode.
DTR
In addition to SPI and QPI features, the device also supports Fast READ DTR operation, which allows high data
throughput while running at lower clock frequencies. DTR READ mode uses both rising and falling edges of the
clock to drive output, resulting in reducing input and output cycles by half.
IS25LP064A
Integrated Silicon Solution, Inc.- www.issi.com 4
Rev. A11
11/02/2018
TABLE OF CONTENTS
FEATURES .......................................................................................................................................................... 2
GENERAL DESCRIPTION .................................................................................................................................. 3
TABLE OF CONTENTS ....................................................................................................................................... 4
1. PIN CONFIGURATION ................................................................................................................................. 7
2. PIN DESCRIPTIONS .................................................................................................................................... 9
3. BLOCK DIAGRAM ...................................................................................................................................... 11
4. SPI MODES DESCRIPTION ...................................................................................................................... 12
5. SYSTEM CONFIGURATION ...................................................................................................................... 14
5.1 BLOCK/SECTOR ADDRESSES .......................................................................................................... 14
6. REGISTERS ............................................................................................................................................... 15
6.1 STATUS REGISTER ............................................................................................................................ 15
6.2 FUNCTION REGISTER ........................................................................................................................ 18
6.3 READ REGISTER................................................................................................................................. 19
7. PROTECTION MODE................................................................................................................................. 21
7.1 HARDWARE WRITE PROTECTION.................................................................................................... 21
7.2 SOFTWARE WRITE PROTECTION .................................................................................................... 21
8. DEVICE OPERATION ................................................................................................................................ 22
8.1 NORMAL READ OPERATION (NORD, 03h) ....................................................................................... 25
8.2 FAST READ OPERATION (FRD, 0Bh) ................................................................................................ 27
8.3 HOLD OPERATION .............................................................................................................................. 29
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh) ........................................................................... 29
8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh) ................................................................... 32
8.6 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh).................................................................. 33
8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh) .......................................................................... 35
8.8 PAGE PROGRAM OPERATION (PP, 02h) .......................................................................................... 39
8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h) ........................................................ 41
8.10 ERASE OPERATION ......................................................................................................................... 42
8.11 SECTOR ERASE OPERATION (SER, D7h/20h) ............................................................................... 43
8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h) ............................................................ 44
8.13 CHIP ERASE OPERATION (CER, C7h/60h) ..................................................................................... 46
8.14 WRITE ENABLE OPERATION (WREN, 06h) .................................................................................... 47
8.15 WRITE DISABLE OPERATION (WRDI, 04h) ..................................................................................... 48
8.16 READ STATUS REGISTER OPERATION (RDSR, 05h) ................................................................... 49
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h) ................................................................. 50
8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h) ............................................................... 51
8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)............................................................. 52
IS25LP064A
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Rev. A11
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8.20 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h) 53
8.21 PROGRAM/ERASE SUSPEND & RESUME ...................................................................................... 54
8.22 ENTER DEEP POWER DOWN (DP, B9h) ......................................................................................... 56
8.23 RELEASE DEEP POWER DOWN (RDPD, ABh) ............................................................................... 57
8.24 SET READ PARAMETERS OPERATION (SRP, C0h) ...................................................................... 58
8.25 READ PRODUCT IDENTIFICATION (RDID, ABh) ............................................................................ 60
8.26 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh) 62
8.27 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) ........................ 63
8.28 READ UNIQUE ID NUMBER (RDUID, 4Bh) ...................................................................................... 64
8.29 READ SFDP OPERATION (RDSFDP, 5Ah) ...................................................................................... 65
8.30 NO OPERATION (NOP, 00h) ............................................................................................................. 65
8.31 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE
RESET ........................................................................................................................................................ 66
8.32 SECURITY INFORMATION ROW ...................................................................................................... 67
8.33 INFORMATION ROW ERASE OPERATION (IRER, 64h) ................................................................. 68
8.34 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) ............................................................. 69
8.35 INFORMATION ROW READ OPERATION (IRRD, 68h) ................................................................... 70
8.36 FAST READ DTR MODE OPERATION (FRDTR, 0Dh) ..................................................................... 71
8.37 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh) .................................................. 73
8.38 FAST READ QUAD IO DTR MODE OPERATION (FRQDTR, EDh) ................................................. 76
8.39 SECTOR LOCK/UNLOCK FUNCTIONS ............................................................................................ 80
9. ELECTRICAL CHARACTERISTICS ........................................................................................................... 82
9.1 ABSOLUTE MAXIMUM RATINGS (1) ................................................................................................... 82
9.2 OPERATING RANGE ........................................................................................................................... 82
9.3 DC CHARACTERISTICS ...................................................................................................................... 83
9.4 AC MEASUREMENT CONDITIONS .................................................................................................... 84
9.5 PIN CAPACITANCE ............................................................................................................................. 84
9.6 AC CHARACTERISTICS ...................................................................................................................... 85
9.7 SERIAL INPUT/OUTPUT TIMING ........................................................................................................ 87
9.8 POWER-UP AND POWER-DOWN ...................................................................................................... 89
9.9 PROGRAM/ERASE PERFORMANCE ................................................................................................. 90
9.10 RELIABILITY CHARACTERISTICS ................................................................................................... 90
10. PACKAGE TYPE INFORMATION ......................................................................................................... 91
10.1 8-Pin JEDEC 208mil Broad Small Outline Integrated Circuit (SOIC) Package (B) ............................ 91
10.2 8-Contact Ultra-Thin Small Outline No-Lead (USON) Package 4x3mm (T) ....................................... 92
10.3 8-Contact Ultra-Thin Small Outline No-Lead (WSON) Package 6x5mm (K)...................................... 93
10.4 8-Contact Ultra-Thin Small Outline No-Lead (WSON) Package 8x6mm (L) ...................................... 94
10.5 16-lead Plastic Small Outline package (300 mils body width) (M) ..................................................... 95
IS25LP064A
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Rev. A11
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10.6 24-Ball Thin Profile Fine Pitch BGA 6x8mm 4x6 BALL ARRAY (G) .................................................. 96
10.7 24-Ball Thin Profile Fine Pitch BGA 6x8mm 5x5 BALL ARRAY (H) ................................................... 97
10.8 8-Contact Extremely-Thin Small Outline No-Lead (XSON) Package 4x4mm (E) .............................. 98
11. ORDERING INFORMATION- Valid Part Numbers ................................................................................ 99
IS25LP064A
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Rev. A11
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1. PIN CONFIGURATION
6
3
CE#
Vcc
SCK
SI (IO0)
7
8
5
4
1
2
GND
WP# (IO2)
SO (IO1)
HOLD# (IO3)
8-pin SOIC 208mil
8-contact WSON 6x5mm
8-contact WSON 8x6mm
8-contact XSON 4x4mm
8-contact USON 4x3mm
HOLD# (IO3)
Vcc
CE#
GND
SCK
1
2
3
4
7
6
5
SO (IO1)
SI (IO0)
8
WP# (IO2)
(1)
(1)
16-pin SOIC 300mil
(2)
(1)
12
10
11
9
13
15
14
5
7
6
8
4
2
3
16
1
Vcc
HOLD# (IO3)
SCK
CE#
WP# (IO2)
GND
NC
NC
NC
NC
NC
SI (IO0)
SO (IO1)
NC
NC
RESET#/NC
IS25LP064A
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Rev. A11
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Top View, Balls Facing Down
NC NC NC NC
F1 F2 F3 F4
NC NC or RESET#
NC SCK GND VCC
NC CE#NC WP#(IO2)
NC SO(IO1) SI(IO0) HOLD# or
RESET# (IO3)
NC NC NC NC
NC
A2 A3 A4
B1 B2 B3 B4
C1 C2 C3 C4
D1 D2 D3 D4
E1 E2 E3 E4
A1 (2)
(1)
24-ball TFBGA, 4x6 Ball Array (Package:G)
NC NC
NC SCK GND VCC
NC CE#NC WP#(IO2)
NC SO(IO1) SI(IO0) HOLD# or
RESET# (IO3)
NC NC NC NC
NC
NC
NC
NC
Top View, Balls Facing Down
NC
24-ball TFBGA, 5x5 Ball Array (Package:H)
A2 A3 A4
B1 B2 B3 B4
C1 C2 C3 C4
D1 D2 D3 D4
E1 E2 E3 E4
A5
B5
C5
D5
E5
NC
(2)
(1)
NC
NC or RESET#
Notes:
1. For RESET# (IO3) pin (or ball) option instead of HOLD# (IO3) pin (or ball), call Factory.
2. In case of 16-pin SOIC and 24-ball TFBGA packages, pin3/ball A4 will become NC or RESET# based on part
number. Below is the summary. Also see the Ordering Information.
Standard(1)
Dedicated RESET#(2)
Pin3 or Ball A4
NC
RESET#
Pin1or Ball D4
Hold#(IO3) or RESET#(IO3)
Hold#(IO3)
Part Number Option
J or S
R or P
IS25LP064A
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Rev. A11
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2. PIN DESCRIPTIONS
For the device without dedicated RESET#
SYMBOL
TYPE
DESCRIPTION
CE#
INPUT
Chip Enable: The Chip Enable (CE#) pin enables and disables the devices
operation. When CE# is high the device is deselected and output pins are in a high
impedance state. When deselected the devices non-critical internal circuitry power
down to allow minimal levels of power consumption while in a standby state.
When CE# is pulled low the device will be selected and brought out of standby mode.
The device is considered active and instructions can be written to, data read, and
written to the device. After power-up, CE# must transition from high to low before a
new instruction will be accepted.
Keeping CE# in a high state deselects the device and switches it into its low power
state. Data will not be accepted when CE# is high.
SI (IO0),
SO (IO1)
INPUT/OUTPUT
Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1):
This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard
SPI instructions use the unidirectional SI (Serial Input) pin to write instructions,
addresses, or data to the device on the rising edge of the Serial Clock (SCK).
Standard SPI also uses the unidirectional SO (Serial Output) to read data or status
from the device on the falling edge of the serial clock (SCK).
In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write
instructions, addresses or data to the device on the rising edge of the Serial Clock
(SCK) and read data or status from the device on the falling edge of SCK. Quad SPI
instructions use the WP# and HOLD# pins as IO2 and IO3 respectively.
WP# (IO2)
INPUT/OUTPUT
Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from
being written in conjunction with the SRWD bit. When the SRWD is set to “1” and
the WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0)
are write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the
Status Register is not write-protected regardless of WP# state.
When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available
since this pin is used for IO2.
HOLD# (IO3) or
RESET# (IO3)
INPUT/OUTPUT
HOLD# (IO3) or RESET#/ (IO3): When the QE bit of Status Register is set to “1”,
HOLD# pin or RESET# is not available since it becomes IO3. When QE=0 the pin
acts as HOLD# or RESET#. The pin defaults HOLD#.
RESET# (IO3) pin instead of HOLD# (IO3) can be supported by optional part
(Call Factory).
The HOLD# pin allows the device to be paused while it is selected. It pauses serial
communication by the master device without resetting the serial sequence. The
HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin
will be at high impedance. Device operation can resume when HOLD# pin is brought
to a high state.
In optional device, RESET# pin is a hardware RESET signal. When RESET# is
driven HIGH, the memory is in the normal operating mode. When RESET# is driven
LOW, the memory enters reset mode and output is High-Z. If RESET# is driven
LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, data
may be lost.
SCK
INPUT
Serial Data Clock: Synchronized Clock for input and output timing operations.
Vcc
POWER
Power: Device Core Power Supply
GND
GROUND
Ground: Connect to ground when referenced to Vcc
NC
Unused
NC: Pins labeled “NC” stand for “No Connect” and should be left uncommitted.
IS25LP064A
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Rev. A11
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For the device with dedicated RESET#
SYMBOL
TYPE
DESCRIPTION
CE#
INPUT
Same as the description in previous page
SI (IO0),
SO (IO1)
INPUT/OUTPUT
Same as the description in previous page
WP# (IO2)
INPUT/OUTPUT
Same as the description in previous page
HOLD# (IO3)
INPUT/OUTPUT
Hold/Serial Data IO (IO3): When the QE bit of Status Register is set to “1”, HOLD#
pin is not available since it becomes IO3. When QE=0 the pin acts as HOLD#.
The HOLD# pin allows the device to be paused while it is selected. It pauses serial
communication by the master device without resetting the serial sequence. The
HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin
will be at high impedance. Device operation can resume when HOLD# pin is brought
to a high state.
RESET#
INPUT/OUTPUT
RESET: Dedicated RESET# function is available only for specific parts. The
RESET# pin (or ball) will be independent of the QE bit of Status Register.
The RESET# is a hardware RESET signal. When RESET# is driven HIGH, the
memory is in the normal operating mode. When RESET# is driven LOW, the
memory enters reset mode and output is High-Z. If RESET# is driven LOW while an
internal WRITE, PROGRAM, or ERASE operation is in progress, data may be lost.
It has an internal pull-up resistor and may be left floating if not used.
SCK
INPUT
Same as the description in previous page
Vcc
POWER
Same as the description in previous page
GND
GROUND
Same as the description in previous page
NC
Unused
Same as the description in previous page
IS25LP064A
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Rev. A11
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3. BLOCK DIAGRAM
Note1: For RESET# (IO3) pin option instead of HOLD# (IO3) pin, call Factory. In case of device with dedicated RESET#
function, RESET# is on pin3/ball A4. See the Ordering Information for the dedicated RESET# option.
Control Logic High Voltage Generator
I/O Buffers and
Data Latches
256 Bytes
Page Buffer
Y-Decoder
X-Decoder
Serial Peripheral Interface
Status
Register
Address Latch &
Counter
Memory Array
CE#
SCK
WP#
(IO2)
SI
(IO0)
SO
(IO1)
HOLD# or RESET#
(IO3)
WP# (IO2)
(1)
IS25LP064A
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4. SPI MODES DESCRIPTION
Multiple IS25LP064A devices can be connected on the SPI serial bus and controlled by a SPI Master, i.e.
microcontroller, as shown in Figure 4.1. The devices support either of two SPI modes:
Mode 0 (0, 0)
Mode 3 (1, 1)
The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the
serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer
to Figure 4.2 and Figure 4.3 for SPI and QPI mode. In both modes, the input data is latched on the rising edge of
Serial Clock (SCK), and the output data is available from the falling edge of SCK.
Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices)
Notes:
1. For RESET# (IO3) option instead of HOLD# (IO3), call Factory.
2. SI and SO pins become bidirectional IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3 respectively
during QPI mode.
SPI interface with
(0,0) or (1,1)
SPI Master
(i.e. Microcontroller) SPI
Memory
Device
SPI
Memory
Device
SPI
Memory
Device
SCK SO SI
SCK
SDI
SDO
CE#
WP#HOLD#
SCK SO SI
CE#
WP#HOLD#
SCK SO SI
CE#
WP#
CS3CS2CS1
HOLD#
(1)
(1)
(1)
IS25LP064A
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Figure 4.2 SPI Mode Support
SCK
SO
SI
Mode 0 (0,0)
Mode 3 (1,1)
MSB
MSB
SCK
Figure 4.3 QPI Mode Support
20
CE#
SCK
40 4 0
3-byte Address
16 12 8
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
IO0
IO121 51 5 1
17 13 9
22 62 6 2
18 14 10
73 3
19 15 11
Mode Bits
IO2
IO3
C4 C0
C1C5
C2C6
C3C71
40 4 0
51 5 1
62 6 2
3 3
4
5
6
0
1
2
3
...
...
...
...
Data 1 Data 2 Data 3
23171717171
6
Note1: MSB (Most Significant Bit)
IS25LP064A
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5. SYSTEM CONFIGURATION
The memory array of the IS25LP064A is divided into uniform 4 Kbyte sectors or uniform 32/64 Kbyte blocks (a
block consists of eight/sixteen adjacent sectors respectively).
Table 5.1 illustrates the memory map of the device. The Status Register controls how the memory is protected.
5.1 BLOCK/SECTOR ADDRESSES
Table 5.1 Block/Sector Addresses of IS25LP064A/032A
Memory
Density
Block No.
(64Kbyte)
Block No.
(32Kbyte)
Sector No.
Sector Size
(Kbyte)
Address Range
64Mb
Block 0
Block 0
Sector 0
4
000000h – 000FFFh
:
:
:
Block 1
:
:
:
Sector 15
4
00F000h - 00FFFFh
Block 1
Block 2
Sector 16
4
010000h – 010FFFh
:
:
:
Block 3
:
:
:
Sector 31
4
01F000h - 01FFFFh
Block 2
Block 4
Sector 32
4
020000h – 020FFFh
:
:
:
Block 5
:
:
:
Sector 47
4
02F000h – 02FFFFh
:
:
:
:
:
Block 63
Block 126
Sector 1008
4
3F0000h – 3F0FFFh
:
:
:
Block 127
:
:
:
Sector 1023
4
3FF000h – 3FFFFFh
:
:
:
:
:
Block 127
Block 254
Sector 2032
4
7F0000h – 7F0FFFh
:
:
:
Block 255
:
:
:
Sector 2047
4
7FF000h – 7FFFFFh
IS25LP064A
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6. REGISTERS
The device has various sets of Registers: Status, Function, and Read.
When the register is read continuously, the same byte is output repeatedly until CE# goes HIGH.
6.1 STATUS REGISTER
Status Register Format and Status Register Bit Definitions are described in Table 6.1 & Table 6.2.
Table 6.1 Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
SRWD
QE
BP3
BP2
BP1
BP0
WEL
WIP
Default
0
0
0
0
0
0
0
0
Table 6.2 Status Register Bit Definition
Bit
Name
Definition
Read-
/Write
Type
Bit 0
WIP
Write In Progress Bit:
"0" indicates the device is ready(default)
"1" indicates a write cycle is in progress and the device is busy
R
Volatile
Bit 1
WEL
Write Enable Latch:
"0" indicates the device is not write enabled (default)
"1" indicates the device is write enabled
R/W1
Volatile
Bit 2
BP0
Block Protection Bit: (See Table 6.4 for details)
"0" indicates the specific blocks are not write-protected (default)
"1" indicates the specific blocks are write-protected
R/W
Non-Volatile
Bit 3
BP1
Bit 4
BP2
Bit 5
BP3
Bit 6
QE
Quad Enable bit:
“0” indicates the Quad output function disable (default)
“1” indicates the Quad output function enable
R/W
Non-Volatile
Bit 7
SRWD
Status Register Write Disable: (See Table 7.1 for details)
"0" indicates the Status Register is not write-protected (default)
"1" indicates the Status Register is write-protected
R/W
Non-Volatile
Note1: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command.
The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status
Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0”
at factory. The Status Register can be read by the Read Status Register (RDSR).
The function of Status Register bits are described as follows:
WIP bit: The Write In Progress (WIP) bit is read-only, and can be used to detect the progress or completion of a
program or erase operation. When the WIP bit is “0”, the device is ready for write Status Register, program or
erase operation. When the WIP bit is “1”, the device is busy.
WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal write enable latch. When the WEL
is “0”, the write enable latch is disabled and the write operations described in Table 6.3 are inhibited. When the
WEL bit is “1”, the write operations are allowed. The WEL bit is set by a Write Enable (WREN) instruction. Each
write register, program and erase instruction except for Set Read Register must be preceded by a WREN
instruction. The WEL bit can be reset by a Write Disable (WRDI) instruction. It will automatically reset after the
completion of any write operation.
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Table 6.3 Instructions requiring WREN instruction ahead
Instructions must be preceded by the WREN instruction
Name
Hex Code
Operation
PP
02h
Serial Input Page Program
PPQ
32h/38h
Quad Input Page Program
SER
D7h/20h
Sector Erase
BER32 (32Kb)
52h
Block Erase 32K
BER64 (64Kb)
D8h
Block Erase 64K
CER
C7h/60h
Chip Erase
WRSR
01h
Write Status Register
WRFR
42h
Write Function Register
IRER
64h
Erase Information Row
IRP
62h
Program Information Row
BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of
the memory area to be protected. Refer to Table 6.4 for the Block Write Protection (BP) bit settings. When a
defined combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any
program or erase operation to that area will be inhibited.
Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s.
SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection (WP#)
signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not write-
protected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register (SRWD, QE,
BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is set to “1” and
WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction.
QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the
QE bit is set to “0”, the pin WP# and HOLD# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins are
enabled.
WARNING: The QE bit must be set to 0 if WP# or HOLD# pin is tied directly to the power supply.
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Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits
Status Register Bits
Protected Memory Area (IS25LP064A, 128Blocks)
BP3
BP2
BP1
BP0
TBS(T/B selection) = 0, Top area
TBS(T/B selection) = 1, Bottom area
0
0
0
0
0( None)
0( None)
0
0
0
1
1(1 block : 127th)
1(1 block : 0th)
0
0
1
0
2(2 blocks : 126th and 127th)
2(2 blocks : 0th and 1st)
0
0
1
1
3(4 blocks : 124th to 127th)
3(4 blocks : 0th to 3rd)
0
1
0
0
4(8 blocks : 120th to 127th)
4(8 blocks : 0th to 7th)
0
1
0
1
5(16 blocks : 112nd to 127th)
5(16 blocks : 0th to 15th)
0
1
1
0
6(32 blocks : 96th to 127th)
6(32 blocks : 0th to 31st)
0
1
1
1
7(64 blocks : 64th to 127th)
7(64 blocks : 0th to 63rd)
1
x
x
x
8~15(128 blocks : 0th to 127th) All blocks
8~15(128 blocks : 0th to 127th) All blocks
Note: x is don’t care
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6.2 FUNCTION REGISTER
Function Register Format and Bit definition are described in Table 6.5 and Table 6.6.
Table 6.5 Function Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
IRL3
IRL2
IRL1
IRL0
ESUS
PSUS
TBS
Reserved
Default
0
0
0
0
0
0
0
0
Table 6.6 Function Register Bit Definition
Bit
Name
Definition
Read-
/Write
Type
Bit 0
Reserved
Reserved
R
Reserved
Bit 1
Top/Bottom
Selection
Top/Bottom Selection. (See Table 6.4 for details)
“0” indicates Top area.
“1” indicates Bottom area.
R/W
OTP
Bit 2
PSUS
Program suspend bit:
“0” indicates program is not suspend
“1” indicates program is suspend
R
Volatile
Bit 3
ESUS
Erase suspend bit:
"0" indicates Erase is not suspend
"1" indicates Erase is suspend
R
Volatile
Bit 4
IR Lock 0
Lock the Information Row 0:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
R/W
OTP
Bit 5
IR Lock 1
Lock the Information Row 1:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
R/W
OTP
Bit 6
IR Lock 2
Lock the Information Row 2:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
R/W
OTP
Bit 7
IR Lock 3
Lock the Information Row 3:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
R/W
OTP
Note: Once OTP bits of Function Register are written to “1”, it cannot be modified to “0” any more.
Top/Bottom Selection: BP0~3 area assignment can be changed from Top (default) to Bottom by setting TBS bit
to “1”. However, once Bottom is selected, it cannot be changed back to Top since TBS bit is OTP. See Table 6.4
for details
PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The PSUS
changes to “1” after a suspend command is issued during the program operation. Once the suspended Program
resumes, the PSUS bit is reset to “0”.
ESUS bit: The Erase Suspend Status indicates when an Erase operation has been suspended. The ESUS bit is
“1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the
ESUS bit is reset to “0”.
IR Lock bit 0 ~ 3: The default is “0” so that the Information Row can be programmed. If the bit set to “1”, the
Information Row can’t be programmed. Once it set to “1”, it cannot be changed back to “0” since IR Lock bits are
OTP.
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6.3 READ REGISTER
Read Register format and Bit definitions pertaining to QPI mode are described below.
READ PARAMETER BITS
Table 6.7 defines all bits that control features in SPI/QPI modes. The ODS2, ODS1, ODS0 (P7, P6, P5) bits
provide a method to set and control driver strength. The Dummy Cycle bits (P4, P3) define how many dummy
cycles are used during various READ modes. The wrap selection bits (P2, P1, P0) define burst length with wrap
around.
The SET READ PARAMETERS Operation (SRP, C0h) is used to set all the Read Register bits, and can thereby
define the output driver strength, number of dummy cycles used during READ modes, burst length with wrap
around.
Table 6.7 Read Parameter Table
P7
P6
P5
P4
P3
P2
P1
P0
ODS2
ODS1
ODS0
Dummy
Cycles
Dummy
Cycles
Wrap
Enable
Burst
Length
Burst
Length
Default (Volatile)
1
1
1
0
0
0
0
0
Table 6.8 Burst Length Data
P1
P0
8 bytes
0
0
16 bytes
0
1
32 bytes
1
0
64 bytes
1
1
Table 6.9 Wrap Function
Wrap around boundary
P2
Whole array regardless of P1 and P0 value
0
Burst Length set by P1 and P0
1
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Table 6.10 Read Dummy Cycles vs Max Frequency
Read Modes
P4,P3 = 00
(Default)
P4,P3 = 01
P4,P3 = 10
P4,P3 = 11
Remark
Mode
Normal Read
03h
0
0
0
0
Max. 50MHz
SPI
Fast Read (2)
0Bh
8
8
8
8
Max. 133MHz(1)
SPI
6
(104MHz)
4
(84MHz)
8(1)
(133MHz)
10(1)
(133MHz)
QPI
Fast Read DTR
0Dh
4
4
4
4
Max.66MHz
SPI
3
(51MHz)
2
(38MHz)
4
(64MHz)
5
(66MHz)
QPI
Fast Read Dual Output
3Bh
8
8
8
8
Max. 133MHz(1)
SPI
Fast Read Dual IO
BBh
4
(104MHz)
4
(104MHz)
8(1)
(133MHz)
8(1)
(133MHz)
SPI
Fast Read Dual IO DTR
BDh
2
(52MHz)
2
(52MHz)
4
(66MHz)
4
(66MHz)
SPI
Fast Read Quad Output
6Bh
8
8
8
8
Max. 133MHz(1)
SPI
Fast Read Quad IO
EBh
6
(104MHz)
4
(84MHz)
8(1)
(133MHz)
10(1)
(133MHz)
SPI , QPI
Fast Read Quad IO DTR
EDh
3
(51MHz)
2
(38MHz)
4
(64MHz)
5
(66MHz)
SPI , QPI
Notes:
1. Max frequency is 133 MHz at Vcc=2.7V~3.6V and 104MHz at Vcc=2.3V~3.6V.
2. RDUID, RDSFDP, IRRD instructions are also applied.
3. Dummy cycles in the table are including Mode bit cycles.
4. Must satisfy bus I/O contention. For instance, if the number of dummy cycles and AX bit cycles are same, then X
must be Hi-Z.
Table 6.11 Driver Strength Table
ODS2
ODS1
ODS0
Description
Remark
0
0
0
Reserved
0
0
1
12.50%
0
1
0
25%
0
1
1
37.50%
1
0
0
Reserved
1
0
1
75%
1
1
0
100%
1
1
1
50%
Default
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7. PROTECTION MODE
The IS25LP064A supports hardware and software write-protection mechanisms.
7.1 HARDWARE WRITE PROTECTION
The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0, SRWD,
and QE in the Status Register. Refer to the section 6.1 STATUS REGISTER.
Write inhibit voltage (VWI) is specified in the section 9.8 POWER-UP AND POWER-DOWN. All write sequence will
be ignored when Vcc drops to VWI.
Table 7.1 Hardware Write Protection on Status Register
SRWD
WP#
Status Register
0
Low
Writable
1
Low
Protected
0
High
Writable
1
High
Writable
Note: Before the execution of any program, erase or write Status/Function Register instruction, the Write Enable
Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled,
the program, erase or write register instruction will be ignored.
7.2 SOFTWARE WRITE PROTECTION
The IS25LP064A also provides a software write protection feature. The Block Protection (TBS, BP3, BP2, BP1,
BP0) bits allow part or the whole memory area to be write-protected.
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8. DEVICE OPERATION
The IS25LP064A utilizes an 8-bit instruction register. Refer to Table 8.1. Instruction Set for details on instructions
and instruction codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first
on Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI or IOs is latched on the
rising edge of Serial Clock (SCK) for normal mode and both of rising and falling edges for DTR mode after Chip
Enable (CE#) is driven low (VIL). Every instruction sequence starts with a one-byte instruction code and is followed
by address bytes, data bytes, or both address bytes and data bytes, depending on the type of instruction. CE#
must be driven high (VIH) after the last bit of the instruction sequence has been shifted in to end the operation.
Table 8.1 Instruction Set
Instructio
n
Name
Operation
Mode
Byte0
Byte1
Byte2
Byte3
Byte4
Byte5
Byte6
NORD
Normal Read
Mode
SPI
03h
A
<23:16>
A
<15:8>
A
<7:0>
Data out
FRD
Fast Read
Mode
SPI
QPI
0Bh
A
<23:16>
A
<15:8>
A
<7:0>
Dummy(1)
Byte
Data out
FRDIO
Fast Read
Dual I/O
SPI
BBh
A
<23:16>
Dual
A
<15:8>
Dual
A
<7:0>
Dual
AXh(1),(2)
Dual
Dual
Data out
FRDO
Fast Read
Dual Output
SPI
3Bh
A
<23:16>
A
<15:8>
A
<7:0>
Dummy(1)
Byte
Dual
Data out
FRQIO
Fast Read
Quad I/O
SPI
QPI
EBh
A
<23:16>
Quad
A
<15:8>
Quad
A
<7:0>
Quad
AXh(1), (2)
Quad
Quad
Data out
FRQO
Fast Read
Quad Output
SPI
6Bh
A
<23:16>
A
<15:8>
A
<7:0>
Dummy(1)
Byte
Quad
Data out
FRDTR
Fast Read
DTR Mode
SPI
QPI
0Dh
A
<23:16>
A
<15:8>
A
<7:0>
Dummy(1)
Byte
Dual
Data out
FRDDTR
Fast Read
Dual I/O DTR
SPI
BDh
A
<23:16>
Dual
A
<15:8>
Dual
A
<7:0>
Dual
AXh(1), (2)
Dual
Dual
Data out
FRQDTR
Fast Read
Quad I/O DTR
SPI
QPI
EDh
A
<23:16>
A
<15:8>
A
<7:0>
AXh(1), (2)
Quad
Quad
Data out
PP
Input Page
Program
SPI
QPI
02h
A
<23:16>
A
<15:8>
A
<7:0>
PD
(256byte)
PPQ
Quad Input
Page Program
SPI
32h
38h
A
<23:16>
A
<15:8>
A
<7:0>
Quad PD
(256byte)
SER
Sector Erase
SPI
QPI
D7h
20h
A
<23:16>
A
<15:8>
A
<7:0>
BER32
(32Kb)
Block Erase
32K
SPI
QPI
52h
A
<23:16>
A
<15:8>
A
<7:0>
BER64
(64Kb)
Block Erase
64K
SPI
QPI
D8h
A
<23:16>
A
<15:8>
A
<7:0>
CER
Chip Erase
SPI
QPI
C7h
60h
WREN
Write Enable
SPI
QPI
06h
WRDI
Write Disable
SPI
QPI
04h
RDSR
Read Status
Register
SPI
QPI
05h
SR
WRSR
Write Status
Register
SPI
QPI
01h
WSR
Data
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Instructio
n
Name
Operation
Mode
Byte0
Byte1
Byte2
Byte3
Byte4
Byte5
Byte6
RDFR
Read Function
Register
SPI
QPI
48h
Data
out
WRFR
Write Function
Register
SPI
QPI
42h
WFR
Data
QPIEN
Enter
QPI mode
SPI
35h
QPIDI
Exit
QPI mode
QPI
F5h
PERSUS
Suspend during
program/erase
SPI
QPI
75h
B0h
PERRSM
Resume
program/erase
SPI
QPI
7Ah
30h
DP
Deep Power
Down
SPI
QPI
B9h
RDID,
RDPD
Read ID /
Release
Power Down
SPI
QPI
ABh
XXh(3)
XXh(3)
XXh(3)
ID7-ID0
SRP
Set Read
Parameters
SPI
QPI
C0h
Data in
RDJDID
Read JEDEC
ID Command
SPI
QPI
9Fh
MF7-MF0
ID15-ID8
ID7-ID0
RDMDID
Read
Manufacturer
& Device ID
SPI
QPI
90h
XXh(3)
XXh(3)
00h
MF7-MF0
ID7-ID0
01h
ID7-ID0
MF7-MF0
RDJDIDQ
Read JEDEC
ID
QPI mode
QPI
AFh
MF7-MF0
ID15-ID8
ID7-ID0
RDUID
Read
Unique ID
SPI
QPI
4Bh
A(4)
<23:16>
A(4)
<15:8>
A(4)
<7:0>
Dummy
Byte
Data out
RDSFDP
SFDP Read
SPI
QPI
5Ah
A
<23:16>
A
<15:8>
A
<7:0>
Dummy
Byte
Data out
NOP
No Operation
SPI
QPI
00h
RSTEN
Software
Reset
Enable
SPI
QPI
66h
RST
Software Reset
SPI
QPI
99h
IRER
Erase
Information
Row
SPI
QPI
64h
A
<23:16>
A
<15:8>
A
<7:0>
IRP
Program
Information
Row
SPI
QPI
62h
A
<23:16>
A
<15:8>
A
<7:0>
PD
(256byte)
IRRD
Read
Information
Row
SPI
QPI
68h
A
<23:16>
A
<15:8>
A
<7:0>
Dummy
Byte
Data out
SECUN-
LOCK
Sector Unlock
SPI
QPI
26h
A
<23:16>
A
<15:8>
A
<7:0>
SECLOCK
Sector Lock
SPI
QPI
24h
Notes:
1. The number of dummy cycles depends on the value setting in the Table 6.10 Read Dummy Cycles.
2. AXh has to be counted as a part of dummy cycles. X means “don’t care”.
3. XX means “don’t care”.
4. A<23:9> are “don’t care” and A<8:4> are always “0”.
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8.1 NORMAL READ OPERATION (NORD, 03h)
The NORMAL READ (NORD) instruction is used to read memory contents of the IS25LP064A at a maximum
frequency of 50MHz.
The NORD instruction code is transmitted via the SI line, followed by three address bytes (A23 - A0) of the first
memory location to be read. A total of 24 address bits are shifted in, but only AMSB (most significant bit) - A0 are
decoded. The remaining bits (A23 – AMSB+1) are ignored. The first byte addressed can be at any memory location.
Upon completion, any data on the SI will be ignored. Refer to Table 8.2 for the related Address Key.
The first byte data (D7 - D0) is shifted out on the SO line, MSB first. A single byte of data, or up to the whole
memory array, can be read out in one NORMAL READ instruction. The address is automatically incremented by
one after each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high
(VIH) after the data comes out. When the highest address of the device is reached, the address counter will roll
over to the 000000h address, allowing the entire memory to be read in one continuous READ instruction.
If the NORMAL READ instruction is issued while an Erase, Program or Write operation is in process (WIP=1) the
instruction is ignored and will not have any effects on the current operation.
Table 8.2 Address Key
Address
IS25LP064A
AMSB – A0
A23 - A0 (A23=X)
X=Don’t Care
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Figure 8.1 Normal Read Sequence
7 6
CE#
SCK
SI
532
SO 410
Data Out 1
Instruction = 03h23
CE#
SCK
SI 32
SO
1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Mode 3
Mode 0
...
76 5 324 10
tV
Data Out 2
...
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8.2 FAST READ OPERATION (FRD, 0Bh)
The FAST READ (FRD) instruction is used to read memory data at up to a 133MHz clock.
The FAST READ instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks),
transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte from the
address is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling edge
of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FAST READ instruction. The FAST READ
instruction is terminated by driving CE# high (VIH).
If the FAST READ instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored without affecting the current cycle.
Figure 8.2 Fast Read Sequence
Instruction = 0Bh
3-byte Address
28 29 30 31
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 ...
7 6
CE#
SCK
SI
532
SO 41
Data Out
31
CE#
SCK
SI 32
SO
1 0
High Impedance
30 29 ...
0 1 2 3 4 5 6 78 9 10 ...
Mode 3
Mode 0
tV
Dummy Cycles
0...
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FAST READ QPI OPERATION (FRD QPI, 0Bh)
The FAST READ QPI (FRD QPI) instruction is used to read memory data at up to a 133MHz clock.
The FAST READ QPI instruction code (2 clocks) is followed by three address bytes (A23-A0—6clocks) and 6
dummy cycles (configurable, default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each bit
latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1
and IO0 lines, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FAST READ QPI instruction. The FAST
READ QPI instruction is terminated by driving CE# high (VIH).
If the FAST READ QPI instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the
instruction is ignored without affecting the current cycle.
Table 8.3 Instructions that Fast Read QPI sequence is applied to
Instruction Name
Operation
Hex Code
FRQIO
Fast Read Quad I/O
EBh
RDUID
Read Unique ID
4Bh
RDSFDP
SFDP Read
5Ah
IRRD
Read Information Row
68h
Figure 8.3 Fast Read QPI Sequence
0Bh
CE#
SCK
IO[3:0]
6 Dummy Cycles
3-byte Address
0 1 2 3 4 5 6 78 9 ... 13 14 15 16 17
Mode 3
Mode 0
23:20 7:4 3:0 7:4 3:0
Data 1 Data 2
19:16 15:12 11:8 7:4 3:0
...
tV
...
Instruction
Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.10 Read Dummy
Cycles.
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8.3 HOLD OPERATION
HOLD# is used in conjunction with CE# to select the IS25LP064A. When the device is selected and a serial
sequence is underway, HOLD# can be used to pause the serial communication with the master device without
resetting the serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To resume serial
communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs
to SI will be ignored while SO is in the high impedance state, during HOLD.
Note: HOLD is not supported in DTR mode or with QE=1 or for the specific parts that do not have HOLD# pin.
Timing graph can be referenced in AC Parameters Figure 9.4
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh)
The FRDIO allows the address bits to be input two bits at a time. This may allow for code to be executed directly
from the SPI in some applications.
The FRDIO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable,
default is 4 clocks), transmitted via the IO1 and IO0 lines, with each pair of bits latched-in during the rising edge
of SCK. The address MSB is input on IO1, the next bit on IO0, and this shift pattern continues to alternate between
the two lines. Depending on the usage of AX read operation mode, a mode byte may be located after address
input.
The first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum
frequency fCT, during the falling edge of SCK. The MSB is output on IO1, while simultaneously the second bit is
output on IO0. Figure 8.4 illustrates the timing sequence.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDIO instruction. FRDIO instruction is
terminated by driving CE# high (VIH).
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8
bits, such as M7 to M0. Four cycles after address input are reserved for Mode bits in FRDIO execution. M7 to M4
are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it
enables the AX read operation and subsequent FRDIO execution skips command code. It saves cycles as
described in Figure 8.5. When the code is different from AXh (where X is don’t care), the device exits the AX read
operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode
configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycle in
Table 6.10 includes number of mode bit cycles. If dummy cycles is configured as 4 cycles, data output will starts
right after mode bit applied.
If the FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not affect the current cycle.
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Figure 8.4 Fast Read Dual I/O Sequence (with command decode cycles)
7 5 3 751 31
Data Out 1
Instruction = BBh22
CE#
SCK
20 6 4
3-byte Address
High Impedance
20 18 ...
0 1 2 3 4 5 6 78 9 10 ... 18 19 20 21
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Mode 3
Mode 0
...
tV
23 31 7 5
21 19 ...
IO0
IO1
3 1
2 0 6 4 2 640 20
4 Dummy Cycles
7531
6420
75...
64...
CE#
SCK
IO0
IO1
Data Out 2 Data Out 3
Mode Bits
Mode Bits
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10. Read Dummy Cycles.
3. Since the number of dummy cycles and AX bit cycles are same in the above Figure, X should be Hi-Z to avoid I/O
contention.
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Figure 8.5 Fast Read Dual I/O AX Read Sequence (without command decode cycles)
22
CE#
SCK
20
3-byte Address
20 18 ...
0 1 2 3 ... 11 12 13 14 15 16 17 18 19 20 21
Mode 3
Mode 0
23 31
21 19 ...
IO0
IO1
4 Dummy Cycles
6
7
64
75
20
31
Data Out 1
tV
64
75
20
31
4
5
Mode Bits
...
...
Data Out 2
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When
the mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
3. Since the number of dummy cycles and AX bit cycles are same in the above Figure, X should be Hi-Z to avoid I/O
contention.
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8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh)
The FRDO instruction is used to read memory data on two output pins each at up to a 133MHz clock.
The FRDO instruction code is followed by three address bytes (A23 – A0) and a dummy byte (8 clocks),
transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT,
during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously the second bit is output on
IO0.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDO instruction. The FRDO instruction is
terminated by driving CE# high (VIH).
If the FRDO instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is
ignored and will not have any effects on the current cycle.
Figure 8.6 Fast Read Dual Output Sequence
CE#
SCK
75
Data Out 1
Instruction = 3Bh 23
CE#
SCK
32 1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Mode 3
Mode 0
...
tV
IO0
IO1
64
3175
2064
31...
20...
Data Out 2
IO0
IO1
8 Dummy Cycles
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8.6 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh)
The FRQO instruction is used to read memory data on four output pins each at up to a 133 MHz clock.
A
Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad Output instruction.
The FRQO instruction code is followed by three address bytes (A23 – A0) and a dummy byte (8 clocks),
transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted out at a maximum
frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while simultaneously the
second bit is output on IO2, the third bit is output on IO1, etc.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h addres s , allowing the entire memory to be r ead with a single FRQ O instruction. F RQO instruction is
terminated by driving CE# high (VIH).
If a FRQO instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction
is ignored and will not have any effects on the current cycle.
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Figure 8.7 Fast Read Quad Output Sequence
CE#
SCK
51
Data Out 1
Instruction = 6Bh 23
CE#
SCK
32 1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Mode 3
Mode 0
...
tV
IO0
IO1
40
5151
4040
51...
40...
IO0
IO1
8 Dummy Cycles
High Impedance
IO2
High Impedance
IO3
73
62
7373
6262
73...
62...
IO2
IO3
Data Out 2 Data Out 3 Data Out 4
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8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh)
The FRQIO instruction allows the address bits to be input four bits at a time. This may allow for code to be
executed directly from the SPI in some applications.
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad I/O instruction.
The FRQIO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable,
default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each group of four bits latched-in during
the rising edge of SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on IO1, the next bit
on IO0, and continue to shift in alternating on the four. Depending on the usage of AX read operation mode, a
mode byte may be located after address input.
The first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted
out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while
simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figure 8.8 illustrates the timing
sequence.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h
address, allowing the entire memory to be read with a single FRQIO instruction. FRQIO instruction is terminated
by driving CE# high (VIH).
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consists of 8
bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO execution. M7 to M4
are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it
enables the AX read operation and subsequent FRQIO execution skips command code. It saves cycles as
described in Figure 8.9. When the code is different from AXh (where X is don’t care), the device exits the AX read
operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode
configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycle in
Table 6.10 includes number of mode bit cycles. If dummy cycles is configured as 6 cycles, data output will starts
right after mode bits and 4 additional dummy cycles are applied.
If the FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
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Figure 8.8 Fast Read Quad I/O Sequence (with command decode cycles)
CE#
SCK
51
Data Out 1
Instruction = EBh 20
CE#
SCK
40 4 0
3-byte Address
High Impedance
16 12 8
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
Mode 3
Mode 0
...
tV
IO0
IO1
40
5151
4040
51
40
IO0
IO1
21 51 5 1
17 13 9
22 62 6 2
18 14 10
23 73 7 3
19 15 11
Mode Bits
IO2
IO3
62626262
73737373
Data Out 2 Data Out 3 Data Out 4
IO2
IO3
1
0
51...
40...
262...
373...
5
4
6
7
6 Dummy Cycles Data Out 5 Data Out 6
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
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Figure 8.9 Fast Read Quad I/O AX Read Sequence (without command decode cycles)
20
CE#
SCK
40 4 0
3-byte Address
16 12 8
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
IO0
IO121 51 5 1
17 13 9
22 62 6 2
18 14 10
23 73 7 3
19 15 11
Mode Bits
IO2
IO3
51
40
51
40
6262
7373
...
...
...
...
Data Out 1 Data Out 2
...
tV
6 Dummy Cycles
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When
the mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
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FAST READ QUAD I/O OPERATION IN QPI MODE (FRQIO, EBh)
The FRQIO instruction in QPI mode is used to read memory data.
It is not required to set QE bit to “1”.before Fast Read Quad I/O instruction in QPI mode.
The FRQIO instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two clocks
are required, while the FRQIO instruction in SPI mode requires that the byte-long instruction code is shifted into
the device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQIO instruction
in QPI mode. In addition, subsequent address and data out are shifted in/out via all four IO lines. In fact, except
for the command cycle, the FRQIO operation in QPI mode is exactly same as the FRQIO operation in SPI mode.
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8
bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO execution. M7 to M4
are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it
enables the AX read operation and subsequent FRQIO execution skips command code. It saves cycles as
described in Figure 8.9. When the code is different from AXh (where X is don’t care), the device exits the AX read
operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode
configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles
in Table 6.10 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will
start right after mode bits and 4 additional dummy cycles are applied.
If the FRQIO instruction in QPI mode is issued while an Erase, Program or Write cycle is in process (WIP=1) the
instruction is ignored and will not have any effects on the current cycle.
Figure 8.10 Fast Read Quad I/O Sequence In QPI Mode
EBh
CE#
SCK
IO[3:0]
6 Dummy Cycles
3-byte Address
0 1 2 3 4 5 6 78 9
...
13 14 15 16 17
Mode 3
Mode 0
23:20 7:4 3:0 7:4 3:0
Data 1 Data 2
19:16 15:12 11:8 7:4 3:0
...
tV
Instruction
Mode Bits
7:4 3:0
...
Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.10 Read Dummy
Cycles.
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8.8 PAGE PROGRAM OPERATION (PP, 02h)
The Page Program (PP) instruction allows up to 256 bytes data to be programmed into memory in a single
operation. The destination of the memory to be programmed must be outside the protected memory area set by
the Block Protection (BP3, BP2, BP1, BP0) bits. A PP instruction which attempts to program into a page that is
write-protected will be ignored. Before the execution of PP instruction, the Write Enable Latch (WEL) must be
enabled through a Write Enable (WREN) instruction.
The PP instruction code, three address bytes and program data (1 to 256 bytes) are input via the Sl line. Program
operation will start immediately after the CE# is brought high, otherwise the PP instruction will not be executed.
The internal control logic automatically handles the programming voltages and timing. The progress or completion
of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If
the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the
previously latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around
to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other
bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s.
A byte cannot be reprogrammed without first erasing the whole sector or block.
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Figure 8.11 Page Program Sequence
Instruction = 02h 23
CE#
SCK
SI 76
SO
7
3-byte Address
High Impedance
22 ... 0
Data In 1 Data In 256
0 1 ... 7 8 9 ... 31 32 33 ... 39 ...
2072
...
2079
Mode 3
Mode 0
... 0... ... 0
Figure 8.12 Page Program QPI Sequence
02h
CE#
SCK
IO[3:0]
3-byte Address
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
23:20 7:4 3:0 7:4 3:0
Data In 1 Data In 2
19:16 15:12 11:8 7:4 3:0 7:4 3:0 7:4 3:0
Data In 3 Data In 4
...
...
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8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h)
The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a single
operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must be
outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A Quad Input Page
Program instruction which attempts to program into a page that is write-protected will be ignored.
Before the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1”
and the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction.
Program operation will start immediately after the CE# is brought high, otherwise the Quad Input Page Program
instruction will not be executed. The internal control logic automatically handles the programming voltages and
timing. The progress or completion of the program operation can be determined by reading the WIP bit in Status
Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the
program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the
previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s.
A byte cannot be reprogrammed without first erasing the whole sector or block.
Figure 8.13 Quad Input Page Program Sequence
Instruction = 32h/38h23
CE#
SCK
40 4 0
3-byte Address
High Impedance
22 ... 0
0 1 2 3 4 5 6 78 9 31 32 33 34 35
Mode 3
Mode 0
IO0
IO151 5 1
62 6 2
73 7 3
Data In 2
IO2
IO3
...
Data In 1
...
...
...
...
...
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8.10 ERASE OPERATION
The memory array of the IS25LP064A is organized into uniform 4 Kbyte sectors or 32/64 Kbyte uniform blocks (a
block consists of eight/sixteen adjacent sectors respectively).
Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to
“1”). In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase
(BER) and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting
the data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the
whole memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to
any programming operation.
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8.11 SECTOR ERASE OPERATION (SER, D7h/20h)
A Sector Erase (SER) instruction erases a 4 Kbyte sector before the execution of a SER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after
the completion of Sector Erase operation.
A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire instruction
sequence The SER instruction code, and three address bytes are input via SI. Erase operation will start
immediately after CE# is pulled high. The internal control logic automatically handles the erase voltage and timing.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status Register
using a RDSR instruction.
If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been
completed.
Figure 8.14 Sector Erase Sequence
Instruction = D7h/20h23
CE#
SCK
SI 32
SO
1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
Mode 3
Mode 0
Figure 8.15 Sector Erase QPI Sequence
D7h/20h
CE#
SCK
IO[3:0]
3-byte Address
0 1 2 3 4 5 6 7
Mode 3
Mode 0
23:20 19:16 15:12 11:8 7:4 3:0
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8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h)
A Block Erase (BER) instruction erases a 32/64 Kbyte block. Before the execution of a BER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the
completion of a block erase operation.
The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after
the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic automatically
handles the erase voltage and timing.
Figure 8.16 Block Erase (64K) Sequence
Instruction = D8h 23
CE#
SCK
SI 32
SO
1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
Mode 3
Mode 0
Figure 8.17 Block Erase (64K) QPI Sequence
D8h
CE#
SCK
IO[3:0]
3-byte Address
0 1 2 3 4 5 6 7
Mode 3
Mode 0
23:20 19:16 15:12 11:8 7:4 3:0
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Figure 8.18 Block Erase (32K) Sequence
Instruction = 52h23
CE#
SCK
SI 32
SO
1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
Mode 3
Mode 0
Figure 8.19 Block Erase (32K) QPI Sequence
52h
CE#
SCK
IO[3:0]
3-byte Address
0 1 2 3 4 5 6 7
Mode 3
Mode 0
23:20 19:16 15:12 11:8 7:4 3:0
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8.13 CHIP ERASE OPERATION (CER, C7h/60h)
A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is automatically reset after
completion of a chip erase operation.
The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high,
otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase
voltage and timing.
Figure 8.20 Chip Erase Sequence
Instruction = C7h/60h
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
SO High Impedance
Figure 8.21 Chip Erase QPI Sequence
C7h/60h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
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8.14 WRITE ENABLE OPERATION (WREN, 06h)
The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to the
write-protected state after power-up. The WEL bit must be write enabled before any write operation, including
Sector Erase, Block Erase, Chip Erase, Page Program, Program Information Row, Write Status Register, and
Write Function Register operations. The WEL bit will be reset to the write-protected state automatically upon
completion of a write operation. The WREN instruction is required before any above operation is executed.
Figure 8.22 Write Enable Sequence
Instruction = 06h
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
SO High Impedance
Figure 8.23 Write Enable QPI Sequence
06h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
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8.15 WRITE DISABLE OPERATION (WRDI, 04h)
The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction
is not required after the execution of a write instruction, since the WEL bit is automatically reset.
Figure 8.24 Write Disable Sequence
Instruction = 04h
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
SO High Impedance
Figure 8.25 Write Disable QPI Sequence
04h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
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8.16 READ STATUS REGISTER OPERATION (RDSR, 05h)
The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a
program, erase or write Status Register operation, RDSR instruction can be used to check the progress or
completion of an operation by reading the WIP bit of Status Register.
Figure 8.26 Read Status Register Sequence
Instruction = 05h
7
CE#
SCK
SI
32
SO 1 0
Data Out
6 5
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
4
tV
Figure 8.27 Read Status Register QPI Sequence
05h
0 1
Mode 3
Mode 0
2 3
7:4 3:0
CE#
SCK
IO[3:0]
tV
Data Out
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8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h)
The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and Status
Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and SRWD
bits. Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into the non-
volatile QE bit.
Figure 8.28 Write Status Register Sequence
Instruction = 01h
CE#
SCK
SI
SO
Data In
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
732 1 0
6 5 4
High Impedence
Figure 8.29 Write Status Register QPI Sequence
01h
0 1
Mode 3
Mode 0
2 3
7:4 3:0
CE#
SCK
IO[3:0]
Data In
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8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h)
The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6
Function Register Bit Definition for more detail.
Figure 8.30 Read Function Register Sequence
Instruction = 48h
7
CE#
SCK
SI
32
SO 1 0
Data Out
6 5
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
4
tV
Figure 8.31 Read Function Register QPI Sequence
48h
0 1
Mode 3
Mode 0
2 3
7:4 3:0
CE#
SCK
IO[3:0]
tV
Data Out
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8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)
The Write Function Register (WRFR) instruction allows the user to change from top block area (default) to bottom
block area by setting TBS bit to “1”.
Also Information Row Lock bits (IRL3~IRL0) can be set to “1” individually by WRFR instruction in order to lock
Information Row. Since TBS bit and IRL bits are OTP, once it is set to “1”, it cannot be set back to “0” again.
Figure 8.32 Write Function Register Sequence
Instruction = 42h
CE#
SCK
SI
SO
Data In
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
732 1 0
6 5 4
High Impedence
Figure 8.33 Write Function Register QPI Sequence
42h
0 1
Mode 3
Mode 0
2 3
7:4 3:0
CE#
SCK
IO[3:0]
Data In
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8.20 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h)
The Enter Quad Peripheral Interface (QPIEN) instruction, 35h, enables the Flash device for QPI mode operation.
Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a power
cycle or an Exit Quad Peripheral Interface (QPIDI) instruction is sent to device.
The Exit Quad Peripheral Interface (QPIDI) instruction, F5h, resets the device to 1-bit SPI protocol operation. To
execute a QPIDI instruction, the host drives CE# low, sends the QPIDI command cycle, then drives CE# high.
The device just accepts QPI (2 clocks) command cycles.
Figure 8.34 Enter Quad Peripheral Interface (QPI) Mode Sequence
Instruction = 35h
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
SO High Impedance
Figure 8.35 Exit Quad Peripheral Interface (QPI) Mode Sequence
F5h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
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8.21 PROGRAM/ERASE SUSPEND & RESUME
The device allows the interruption of Sector-Erase, Block-Erase or Page-Program operations to conduct other
operations. 75h/B0h command for suspend and 7Ah/30h for resume will be used. (SPI/QPI all acceptable)
Function Register bit2 (PSUS) and bit3 (ESUS) are used to check whether or not the device is in suspend mode.
Suspend to read ready timing: 100µs
Resume to another suspend timing: 400µs
PROGRAM/ERASE SUSPEND DURING SECTOR-ERASE OR BLOCK-Erase (PERSUS 75h/B0h)
The Program/Erase Suspend allows the interruption of Sector Erase and Block Erase operations. After the
Program/Erase Suspend, WEL bit will be disabled, therefore only read related, resume and reset commands can
be accepted. Refer to Table 8.3 for more detail.
To execute a Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend
command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the erase has been
suspended by changing the ESUS bit from “0” to “1”, but the device will not accept another command until it is
ready. To determine when the device will accept a new command, poll the WIP bit in the Status Register or wait
the specified time tSUS. When ESUS bit is issued, the Write Enable Latch (WEL) bit will be reset.
PROGRAM/ERASE SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h)
The Program/Erase Suspend allows the interruption of all array program operations. After the Program/Erase
Suspend command, WEL bit will be disabled, therefore only read related, resume and reset command can be
accepted. Refer to Table 8.3 for more detail.
To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend
command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the programming has been
suspended by changing the PSUS bit from “0” to “1”, but the device will not accept another command until it is
ready. To determine when the device will accept a new command, poll the WIP bit in the Status Register or wait
the specified time tSUS.
PROGRAM/ERASE RESUME (PERRSM 7Ah/30h)
The Program/Erase Resume restarts the Program or Erase command that was suspended, and changes the
suspend status bit in the Function Register (ESUS or PSUS bits) back to “0”. To execute the Program/Erase
Resume operation, the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h), then
drives CE# high. A cycle is two nibbles long, most significant nibble first. To determine if the internal, self-timed
Write operation completed, poll the WIP bit in the Status Register, or wait the specified time tSE, tBE or tPP for Sector
Erase, Block Erase, or Page Programming, respectively. The total write time before suspend and after resume
will not exceed the uninterrupted write times tSE, tBE or tPP.
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Table 8.4 Instructions accepted during Suspend
Operation
Suspended
Instruction Allowed
Name
Hex Code
Operation
Program or Erase
NORD
03h
Read Data Bytes from Memory at Normal Read Mode
Program or Erase
FRD
0Bh
Read Data Bytes from Memory at Fast Read Mode
Program or Erase
FRDIO
BBh
Fast Read Dual I/O
Program or Erase
FRDO
3Bh
Fast Read Dual Output
Program or Erase
FRQIO
EBh
Fast Read Quad I/O
Program or Erase
FRQO
6Bh
Fast Read Quad Output
Program or Erase
FRDTR
0Dh
Fast Read DTR Mode
Program or Erase
FRDDTR
BDh
Fast Read Dual I/O DTR
Program or Erase
FRQDTR
EDh
Fast Read Quad I/O DTR
Program or Erase
RDSR
05h
Read Status Register
Program or Erase
RDFR
48h
Read Function Register
Program or Erase
PERRSM
7Ah/30h
Resume program/erase
Program or Erase
RDID
ABh
Read Manufacturer and Product ID
Program or Erase
SRP
C0
Set Read Parameters (Volatile)
Program or Erase
RDJDID
9Fh
Read Manufacturer and Product ID by JEDEC ID Command
Program or Erase
RDMDID
90h
Read Manufacturer and Device ID
Program or Erase
RDJDIDQ
AFh
Read JEDEC ID QPI mode
Program or Erase
RDUID
4Bh
Read Unique ID Number
Program or Erase
RDSFDP
5Ah
SFDP Read
Program or Erase
NOP
00h
No Operation
Program or Erase
RSTEN
66h
Software reset enable
Program or Erase
RST
99h
Reset (Only along with 66h)
Program or Erase
IRRD
68h
Read Information Row
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8.22 ENTER DEEP POWER DOWN (DP, B9h)
The Enter Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption
(enter into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the Power-
down mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction is
initiated by driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be driven
high after the instruction has been latched, or Power-down mode will not engage. Once CE# pin driven high, the
Power-down mode will be entered within the time duration of tDP. While in the Power-down mode only the Release
from Power-down/RDID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored, including the Read Status Register instruction which is always available during normal
operation. Ignoring all but one instruction makes the Power Down state a useful condition for securing maximum
write protection. It is available in both SPI and QPI mode.
Figure 8.36 Enter Deep Power Down Mode Sequence
Instruction = B9h
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
tDP
SO High Impedance
Figure 8.37 Enter Deep Power Down Mode QPI Sequence
B9h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
tDP
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8.23 RELEASE DEEP POWER DOWN (RDPD, ABh)
The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device
from the Power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction code “ABh”
and driving CE# high.
Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is
restored and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the
Release Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress
(WIP=1) the instruction is ignored and will not have any effects on the current cycle.
Figure 8.38 Release Power Down Sequence
tRES1
Instruction = ABh
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
SO High Impedance
Figure 8.39 Release Power Down QPI Sequence
tRES1
ABh
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
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8.24 SET READ PARAMETERS OPERATION (SRP, C0h)
Set Read Operational Driver Strength
This device supports configurable Operational Driver Strengths in both SPI and QPI modes by setting three bits
within the Read Register (ODS0, ODS1, ODS2). To set the ODS bits the SRP operation (C0h) instruction is
required. The device’s driver strength can be reduced as low as 12.50% of full drive strength. Details regarding
the driver strength can be found in Table 6.11.
Note: The default driver strength is set to 50%
Figure 8.40 Set Read Parameters Sequence
Instruction = C0h
CE#
SCK
SI
SO
Data In
0 1 2 3 4 5 6 78 9 10 11 12 13 14 15
Mode 3
Mode 0
732 1 0
6 5 4
High Impedence
Figure 8.41 Set Read Parameters QPI Sequence
C0h
0 1
Mode 3
Mode 0
2 3
7:4 3:0
CE#
SCK
IO[3:0]
Data In
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Read with “8/16/32/64-Byte Wrap Around”
The device is capable of burst read with wrap around in both SPI and QPI mode. The size of burst length is
configurable by using P0, P1, and P2 bits in Read Register. P2 bit (Wrap enable) enables the burst mode feature.
P0 and P1 define the size of burst. Burst lengths of 8, 16, 32, and 64 bytes are supported. By default, address
increases by one up through the entire array. By setting the burst length, the data being accessed can be limited
to the length of burst boundary within a 256 byte page. The first output will be the data at the initial address which
is specified in the instruction. Following data will come out from the next address within the burst boundary. Once
the address reaches the end of boundary, it will automatically move to the first address of the boundary. CE# high
will terminate the command.
For example, if burst length of 8 and initial address being applied is 0h, following byte output will be from address
00h and continue to 01h,..,07h, 00h, 01h… until CE# terminates the operation. If burst length of 8 and initial
address being applied is FEh(254d), following byte output will be from address FEh and continue to FFh, F8h,
F9h, FAh, FBh, FCh, FDh, and repeat from FEh until CE# terminates the operation.
The command, “SET READ PARAMETERS OPERATION (C0h)”, is used to configure the burst length. If the
following data input is one of “00h”,”01h”,”02h”, and ”03h”, the device will be in default operation mode. It will be
continuous burst read of the whole array. If the following data input is one of “04h”,”05h”,”06h”, and ”07h”, the
device will set the burst length as 8,16,32 and 64 respectively.
To exit the burst mode, another “C0h” command is necessary to set P2 to 0. Otherwise, the burst mode will be
retained until either power down or reset operation. To change burst length, another “C0h” command should be
executed to set P0 and P1 (Detailed information in Table 6.8 Burst Length Data). All read commands operate in
burst mode once the Read Register is set to enable burst mode.
Refer to Figures 8.40 and 8.41 for instruction sequence.
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8.25 READ PRODUCT IDENTIFICATION (RDID, ABh)
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI
and QPI modes. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit
Electronic Signature, whose values are shown as table of Product Identification.
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising
SCK edge. Then the Device ID is shifted out on SO with the MSB first, each bit been shifted out during the falling
edge of SCK. The RDID instruction is ended by driving CE# high. The Device ID (ID7-ID0) outputs repeatedly if
additional clock cycles are continuously sent to SCK while CE# is at low.
Table 8.5 Product Identification
Manufacturer ID
(MF7-MF0)
ISSI Serial Flash
9Dh
Instruction
ABh
90h
9Fh
Device Density
Device ID (ID7-ID0)
Memory Type + Capacity
(ID15-ID0)
64Mb
16h
6017h
Figure 8.42 Read Product Identification Sequence
Device ID
(ID7-ID0)
Data Out
32 33 ... 39
Instruction = ABh
CE#
SCK
SI
SO
0 1 ... 7 8 9 ... 31
Mode 3
Mode 0
3 Dummy Bytes
tV
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Figure 8.43 Read Product Identification Sequence (QPI)
ABh
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
2 3 4 5 6 7 8 9
6 Dummy Cycles Device ID
(ID7-ID0)
tV
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8.26 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh)
The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to
Table 8.5 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command (9Fh in
SPI mode and QPI mode, AFh in QPI mode) is input, the Manufacturer ID is shifted out MSB first followed by the
2-byte electronic ID (ID15-ID0) that indicates Memory Type and Capacity, one bit at a time. Each bit is shifted out
during the falling edge of SCK. If CE# stays low after the last bit of the 2-byte electronic ID, the Manufacturer ID
and 2-byte electronic ID will loop until CE# is pulled high.
and 2-byte electronic ID will loop until CE# is pulled high.
Figure 8.44 RDJDID (Read JEDEC ID in SPI Mode) Sequence
Instruction = 9Fh
Memory Type
(ID15-ID8)
CE#
SCK
SI
Capacity
(ID7-ID0)
SO
0 1 ... 7 8 9 ... 15 16 17 ... 23 24 25 ... 31
Mode 3
Mode 0
Manufacturer ID
(MF7-MF0)
tV
Figure 8.45 RDJDID and RDJDIDQ (Read JEDEC ID) Sequence in QPI Mode
9Fh/AFh
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
2 3
7:4 3:0
4 5
7:4 3:0
6 7
7:4 3:0
MF7-MF0ID15-ID8ID7-ID0
tV
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8.27 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h)
The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer and
product ID of devices. Refer to Table 8.4 Product Identification for Manufacturer ID and Device ID. The RDMDID
instruction code is followed by two dummy bytes and one byte address (A7~A0), each bit being latched-in on SI
during the rising edge of SCK. If one byte address is initially set as A0 = 0, then the Manufacturer ID is shifted out
on SO with the MSB first followed by the Device ID (ID7- ID0). Each bit is shifted out during the falling edge of
SCK. If one byte address is initially set as A0 = 1, then Device ID will be read first followed by the Manufacturer
ID. The Manufacturer and Device ID can be read continuously alternating between the two until CE# is driven
high.
Figure 8.46 Read Product Identification by RDMDID Read Sequence
Instruction = 90h
Manufacturer ID
(MF7-MF0)
CE#
SCK
SI
Device ID
(ID7-ID0)
SO
0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47
Mode 3
Mode 0
3-byte Address
tV
Notes:
1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) 1-byte Device ID (ID7-ID0)
ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) 1-byte Manufacturer ID (MF7-MF0)
2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is pulled high.
Figure 8.47 Read Product Identification by RDMDID QPI Read Sequence
90h
CE#
SCK
IO[3:0]
3-byte Address
0 1 2 3 4 5 6 78 9 10 11
Mode 3
Mode 0
23:20 7:4 3:0 7:4 3:019:16 15:12 11:8 7:4 3:0
tV
Instruction Manufacturer
ID (MF7-MF0) Device ID
(ID7-ID0)
Notes:
1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) 1-byte Device ID (ID7-ID0)
ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) 1-byte Manufacturer ID (MF7-MF0)
2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is pulled high.
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8.28 READ UNIQUE ID NUMBER (RDUID, 4Bh)
The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is unique
to the device. The ID number can be used in conjunction with user software methods to help prevent copying or
cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the instruction code
(4Bh) followed by 3 address bytes and a dummy byte. After which, the 16-byte ID is shifted out on the falling edge
of SCK as shown below.
As a result, the sequence of RDUID instruction is same as FAST READ except for the instruction code. RDUID
QPI sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI
operation.
Note: 16 bytes of data will repeat as long as CE# is low and SCK is toggling.
Figure 8.48 RDUID Sequence
Instruction = 4Bh Dummy Byte
CE#
SCK
SI
SO
0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47
Mode 3
Mode 0
3 Byte Address
Data Out
tV
...
Table 8.6 Unique ID Addressing
A[23:16]
A[15:9]
A[8:4]
A[3:0]
XXh
XXh
00h
0h Byte address
XXh
XXh
00h
1h Byte address
XXh
XXh
00h
2h Byte address
XXh
XXh
00h
…
XXh
XXh
00h
Fh Byte address
Note: XX means “don’t care”.
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8.29 READ SFDP OPERATION (RDSFDP, 5Ah)
The Serial Flash Discoverable Parameters (SFDP) standard provides a consistent method of describing the
functions and features of serial Flash devices in a standard set of internal parameter tables. These parameters
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. For more details please refer to the JEDEC Standard JESD216A (Serial Flash Discoverable
Parameters).
The sequence of issuing RDSFDP instruction is same as FAST_READ: CE# goes low Send RDSFDP
instruction (5Ah) Send 3 address bytes on SI pin Send 1 dummy byte on SI pin Read SFDP code on SO
End RDSFDP operation by driving CE# high at any time during data out. Refer to ISSI’s Application note for
SFDP table. The data at the addresses that are not specified in SFDP table are undefined.
The sequence of RDSFDP instruction is same as FAST READ except for the instruction code. RDSFDP QPI
sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI
operation.
Figure 8.49 RDSFDP (Read SFDP) Sequence
Instruction = 5Ah Dummy Byte
CE#
SCK
SI
SO
0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47
Mode 3
Mode 0
3 Byte Address
Data Out
tV
...
8.30 NO OPERATION (NOP, 00h)
The No Operation command solely cancels a Reset Enable command and has no impact on any other commands.
It is available in both SPI and QPI modes. To execute a NOP, the host drives CE# low, sends the NOP command
cycle (00h), then drives CE# high.
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8.31 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET
The Software Reset operation is used as a system reset that puts the device in normal operating mode. During
the Reset operation, the value of volatile registers will default back to the value in the corresponding non-volatile
register. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST). The operation
requires the Reset-Enable command followed by the Reset command. Any command other than the Reset
command after the Reset-Enable command will disable the Reset-Enable.
Execute the CE# pin low sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives
CE# low again, sends the Reset command (99h), and pulls CE# high.
Only for the parts that have the RESET# function option, Hardware Reset function is available. For all packages
with RESET# (IO3) option except 16-pin SOIC/24-ball TFBGA with dedicated RESET# function, the RESET# pin
will be solely applicable in SPI mode and when the QE bit is disabled. For 16-pin SOIC/24-ball TFBGA packages
with dedicated RESET# function, the RESET# pin (or ball) is always applicable regardless of the QE bit value.
The dedicated RESET# pin (or ball) has an internal pull-up resistor and may be left floating if not used The
RESET# pin (or ball) has the highest priority among all the input signals and will reset the device to its initial
power-on state regardless of the state of all other pins (CE#, IOs, SCK, and WP#).
In order to activate Hardware Reset, the RESET# pin (or ball) must be driven low for a minimum period of tRESET
(100ns). Drive RESET# low for a minimum period of tRESET will interrupt any on-going internal and external
operations, release the device from deep power down mode1, disable all input signals, force the output pin enter
a state of high impedance, and reset all the read parameters. The required wait time after activating a HW Reset
before the device will accept another instruction (tHWRST) is 35µs.
The Software/Hardware Reset during an active Program or Erase operation aborts the operation, which can result
in corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing
may vary. Recovery from a Write operation will require more latency than recovery from other operations.
Note 1: The Status and Function Registers remain unaffected.
Figure 8.50 Software Reset Enable and Software Reset Sequence (RSTEN, 66h + RST, 99h)
Instruction = 66h
CE#
SCK
SI
0 1
Mode 3
Mode 0
2 3 4 5 6 7
Instruction = 99h
8 9 10 11 12 13 14 15
SO High Impedance
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Figure 8.51 Software Reset Enable and Software Reset QPI Sequence (RSTEN, 66h + RST, 99h)
66h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
99h
0 1
8.32 SECURITY INFORMATION ROW
The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The
security bits can be reprogrammed by the user. Any program security instruction issued while an erase, program
or write cycle is in progress is rejected without having any effect on the cycle that is in progress.
Table 8.7 Information Row Valid Address Range
Address Assignment
A[23:16]
A[15:8]
A[7:0]
IRL0 (Information Row Lock0)
00h
00h
Byte address
IRL1
00h
10h
Byte address
IRL2
00h
20h
Byte address
IRL3
00h
30h
Byte address
Bit 7~4 of the Function Register is used to permanently lock the programmable memory array.
When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed.
When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only.
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8.33 INFORMATION ROW ERASE OPERATION (IRER, 64h)
Information Row Erase (IRER) instruction erases the data in the Information Row x (x: 0~3) array. Prior to the
operation, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is
automatically reset after the completion of the operation.
The sequence of IRER operation: Pull CE# low to select the device Send IRER instruction code Send three
address bytes Pull CE# high. CE# should remain low during the entire instruction sequence. Once CE# is
pulled high, Erase operation will begin immediately. The internal control logic automatically handles the erase
voltage and timing. Refer to Figure 8.49 for IRER Sequence.
Figure 8.52 IRER (Information Row Erase) Sequence
Instruction = 64h23
CE#
SCK
SI 32
SO
1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
Mode 3
Mode 0
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8.34 INFORMATION ROW PROGRAM OPERATION (IRP, 62h)
The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory
in a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled
through a Write Enable (WREN) instruction.
The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input.
Three address bytes has to be input as specified in the Table 8.6 Information Row Valid Address Range. Program
operation will start once the CE# goes high, otherwise the IRP instruction will not be executed. The internal control
logic automatically handles the programming voltages and timing. During a program operation, all instructions will
be ignored except the RDSR instruction. The progress or completion of the program operation can be determined
by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still
in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The
previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A
byte cannot be reprogrammed without first erasing the corresponding Information Row array which is one of
IR0~3.
Figure 8.53 IRP (Information Row Program) Sequence
Instruction = 62h 23
CE#
SCK
SI 76
SO
7
3-byte Address
High Impedance
22 ... 0
Data In 1 Data In 256
0 1 ... 7 8 9 ... 31 32 33 ... 39 ...
2072
...
2079
Mode 3
Mode 0
... 0... ... 0
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8.35 INFORMATION ROW READ OPERATION (IRRD, 68h)
The IRRD instruction is used to read memory data at up to a 133MHz clock.
The IRRD instruction code is followed by three address bytes (A23 - A0) and a dummy byte, transmitted via the
SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on
the SO line, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK.
The address is automatically incremented by one after each byte of data is shifted out. Once the address reaches
the last address of each 256 byte Information Row, the next address will not be valid and the data of the address
will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte with a valid
starting address of each Information Row in order to read all data in the 4 x 256 byte Information Row array. The
IRRD instruction is terminated by driving CE# high (VIH).
If an IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
The sequence of IRRD instruction is same as FAST READ except for the instruction code. IRRD QPI sequence
is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation.
Figure 8.54 IRRD (Information Row Read) Sequence
Instruction = 68hDummy Cycles
CE#
SCK
SI
SO
0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47
Mode 3
Mode 0
3 Byte Address
Data Out
tV
...
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8.36 FAST READ DTR MODE OPERATION (FRDTR, 0Dh)
The FRDTR instruction is for doubling the data in and out. Signals are triggered on both rising and falling edge of
clock. The address is latched on both rising and falling edge of SCK, and data of each bit shifts out on both rising
and falling edge of SCK at a maximum frequency. The 2-bit address can be latched-in at one clock, and 2-bit data
can be read out at one clock, which means one bit at the rising edge of clock, the other bit at the falling edge of
clock.
The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte of data is shifted out, so the whole memory can be read out in a single FRDTR instruction. The
address counter rolls over to 0 when the highest address is reached.
The sequence of issuing FRDTR instruction is: CE# goes low Sending FRDTR instruction code (1bit per clock)
3-byte address on SI (2-bit per clock) 4 dummy clocks on SI Data out on SO (2-bit per clock) End
FRDTR operation via driving CE# high at any time during data out.
While a Program/Erase/Write Status Register cycle is in progress, FRDTR instruction will be rejected without any
effect on the current cycle.
Figure 8.55 FRDTR Sequence
CE#
SCK
SI
SO
Data Out 1
Instruction = 0Dh
CE#
SCK
SI
SO
3-byte Address
High Impedance
0 1 2 3 4 5 6 78 9 10 ... 19 20 21
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ...
Mode 3
Mode 0
tV
23 22 21 0
76 5 43 2 1 0
Data Out 2
76 5 43 2 1 0
Data Out 3
76 5 43 2 1 0
4 Dummy
Cycles
20 19 18 17 ...
Data Out ...
76 5 ...
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FAST READ DTR QPI MODE OPERATION (FRDTR QPI, 0Dh)
The FRDTR QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are
required, while the FRDTR instruction requires that the byte-long instruction code is shifted into the device only
via IO0 line in eight clocks. In addition, subsequent address and data out are shifted in/out via all four IO lines
unlike the FRDTR instruction. Eventually this operation is same as the FRQDTR QPI, but the only different thing
is that AX mode is not available in the FRDTR QPI operation.
The sequence of issuing FRDTR QPI instruction is: CE# goes low Sending FRDTR QPI instruction (4-bit per
clock) 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) 3 dummy clocks (configurable,
default is 3 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) End FRDTR QPI operation
by driving CE# high at any time during data out.
If the FRDTR QPI instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1),
the instruction will be rejected without any effect on the current cycle.
Figure 8.56 FRDTR QPI Sequence
Instruction
= 0Dh
CE#
SCK
3-byte Address
0 1 2 3 4 5 6 78 9 10 11 12
Mode 3
Mode 0 tV
20 16 12
51
21 17 13
40
IO0
IO1
22 18 14
23 19 15
84 0
95 1
10 6 2
11 7 3
3 Dummy Cycles
IO2
IO3
62
73
51
40
62
73
Data
Out Data
Out
...
4 0
5 1
6 2
7 3
51
40
62
73
Data
Out
51
40
62
73
Data
Out
51
40
62
73
Data
Out
...
...
...
...
Notes:
1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
2. Sufficient dummy cycles are required to avoid I/O contention.
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8.37 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh)
The FRDDTR instruction enables Double Transfer Rate throughput on dual I/O of the device in read mode. The
address (interleave on dual I/O pins) is latched on both rising and falling edge of SCK, and the data (interleave on
dual I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 4-bit address can be
latched-in at one clock, and 4-bit data can be read out at one clock, which means two bits at the rising edge of
clock, the other two bits at the falling edge of clock.
The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte of data is shifted out, so the whole memory can be read out with a single FRDDTR instruction.
The address counter rolls over to 0 when the highest address is reached. Once writing FRDDTR instruction, the
following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing FRDDTR instruction is: CE# goes low Sending FRDDTR instruction (1-bit per clock)
24-bit address interleave on IO1 & IO0 (4-bit per clock) 2 dummy clocks (configurable default is 2 clocks) on
IO1 & IO0 Data out interleave on IO1 & IO0 (4-bit per clock) End FRDDTR operation via pulling CE# high at
any time during data out (Please refer to Figure 8.57 for 2 x I/O Double Transfer Rate Read Mode Timing
Waveform).
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read
operation mode which enables subsequent FRDDTR execution skips command code. It saves cycles as described
in Figure 8.58. When the code is different from AXh, the device exits the AX read operation. After finishing the
read operation, device becomes ready to receive a new command. Since the number of dummy cycles and AX
bit cycles are same in this case, X should be Hi-Z to avoid I/O contention.
If the FRDDTR instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1),
the instruction will be rejected without any effect on the current cycle.
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Figure 8.57 FRDDTR Sequence (with command decode cycles)
CE#
SCK
SI
SO
Instruction = BDh
CE#
SCK
SI
SO
3-byte Address
High Impedance
0 1 2 3 4 5 6 78 9 10 ... 13 14
15 16 17 18 19 20 21 22 23 24 25 26 27 28 ...
Mode 3
Mode 0
tV
22 20 18 0
75 3 17 5 3 1 75 3 17 5 3 1 75 3 17 5 3 1
2 Dummy Cycles
23 21 19 1
Data Out
64 2 06 4 2 0 64 2 06 4 2 0 64 2 06 4 2 0
Data Out Data Out Data Out Data Out Data Out
16 14 12
17 15 13
10
11 75
64
31
20
Mode Bits
Mode Bits
...
...
7 5
6 4
...
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
3. Since the number of dummy cycles and AX bit cycles are same in the above Figure, X should be Hi-Z to avoid I/O
contention.
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Figure 8.58 FRDDTR AX Read Sequence (without command decode cycles)
SI
SO
3-byte Address
...
tV
22 20 18
75 3 17 5 3 1 75 3 1
2 Dummy Cycles
23 21 19
64 2 06 4 2 0 64 2 0
Data Out Data Out Data Out
16 14 12
17 15 13
10
11
SCK
0 1 2 ... 6 7 8910 11 12 13 14 15
Mode 3
Mode 0
CE#
7 5 3 1
6 4 2 00
1
Mode Bits
...
...
75
64
...
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When
the mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
3. Since the number of dummy cycles and AX bit cycles are same in the above Figure, X should be Hi-Z to avoid I/O
contention.
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8.38 FAST READ QUAD IO DTR MODE OPERATION (FRQDTR, EDh)
The FRQDTR instruction enables Double Transfer Rate throughput on quad I/O of the device in read mode.
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad I/O DTR
instruction.
The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCK, and data (interleave on
4 I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 8-bit address can be
latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at the rising edge of
clock, the other four bits at the falling edge of clock.
The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out with a single FRQDTR instruction. The
address counter rolls over to 0 when the highest address is reached. Once writing FRQDTR instruction, the
following address/dummy/data out will perform as 8-bit instead of previous 1-bit.
The sequence of issuing FRQDTR instruction is: CE# goes low Sending FRQDTR instruction (1-bit per clock)
24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) 3 dummy clocks (configurable, default is
3 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) End FRQDTR operation by driving
CE# high at any time during data out.
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read
operation mode which enables subsequent FRQDTR execution skips command code. It saves cycles as
described in Figure 8.60. When the code is different from AXh, the device exits the AX read operation. After
finishing the read operation, device becomes ready to receive a new command.
If the FRQDTR instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1),
the instruction will be rejected without any effect on the current cycle.
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Figure 8.59 FRQDTR Sequence (with command decode cycles)
CE#
SCK
Instruction = EDh
CE#
SCK
3-byte Address
High Impedance
0 1 2 3 4 5 6 78 9 10 11 12
14 15 16 17 18 19 20 21 22 23 24 25 26 ...
Mode 3
Mode 0
tV
20 16 12
51
21 17 13
Data
Out
40
IO0
IO1
IO0
22 18 14
23 19 15
84 0
95 1
10 6 2
11 7 3
3 Dummy Cycles
IO2
IO3
IO1
IO2
IO3
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
Data
Out Data
Out Data
Out
Data
Out Data
Out Data
Out
Data
Out Data
Out Data
Out
Data
Out Data
Out
13
51
40
62
73
Mode Bits
...
...
...
...
51
40
62
73
Data
Out
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles
are same, then X should be Hi-Z.
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Figure 8.60 FRQDTR AX Read Sequence (without command decode cycles)
CE#
SCK
3-byte Address
0 1 2 3 4 5 6 78 9 10 11
Mode 3
Mode 0 tV
20 16 12
51
21 17 13
Data
Out
40
IO0
IO1
22 18 14
23 19 15
84 0
95 1
10 6 2
11 7 3
3 Dummy Cycles
IO2
IO3
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
51
40
62
73
Data
Out Data
Out Data
Out
Data
Out Data
Out Data
Out
51
40
62
73
Mode Bits
12 ...
...
...
...
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When
the mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles
are same, then X should be Hi-Z.
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FAST READ QUAD IO DTR QPI MODE OPERATION (FRQDTR QPI, EDh)
The FRQDTR QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are
required, while the FRQDTR instruction requires that the byte-long instruction code is shifted into the device only
via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQDTR QPI instruction. In
addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQDTR instruction. In
fact, except for the command cycle, the FRQDTR QPI operation is exactly same as the FRQDTR.
It is not required to set QE bit to “1”.before Fast Read Quad I/O DTR instruction in QPI mode.
The sequence of issuing FRQDTR QPI instruction is: CE# goes low Sending FRQDTR QPI instruction (4-bit
per clock) 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) 3 dummy clocks (configurable,
default is 3 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) End FRQDTR QPI operation
by driving CE# high at any time during data out.
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read
operation mode which enables subsequent FRQDTR QPI execution skips command code. It saves cycles as
described in Figure 8.60. When the code is different from AXh, the device exits the AX read operation. After
finishing the read operation, device becomes ready to receive a new command.
If the FRQDTR QPI instruction is issued while a Program/Erase/Write Status Register cycle is in progress
(WIP=1), the instruction will be rejected without any effect on the current cycle.
Figure 8.61 FRQDTR QPI Sequence (with command decode cycles)
Instruction
= EDh
CE#
SCK
3-byte Address
0 1 2 3 4 5 6 78 9 10 11 12
Mode 3
Mode 0 tV
20 16 12
51
21 17 13
40
IO0
IO1
22 18 14
23 19 15
84 0
95 1
10 6 2
11 7 3
3 Dummy Cycles
IO2
IO3
62
73
51
40
62
73
Data
Out Data
Out
51
40
62
73
Mode Bits
...
4 0
5 1
6 2
7 3
51
40
62
73
Data
Out
51
40
62
73
Data
Out
51
40
62
73
Data
Out
...
...
...
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.10 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles
are same, then X should be Hi-Z.
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8.39 SECTOR LOCK/UNLOCK FUNCTIONS
SECTOR UNLOCK OPERATION (SECUNLOCK, 26h)
The Sector Unlock command allows the user to select a specific sector to allow program and erase operations.
This instruction is effective when the blocks are designated as write-protected through the BP0, BP1, BP2, and
BP3 bits in the Status Register. Only one sector can be enabled at any time. To enable a different sector, a
previously enabled sector must be disabled by executing a Sector Lock command. The instruction code is followed
by a 24-bit address specifying the target sector, but A0 through A11 are not decoded. The remaining sectors
within the same block remain as read-only.
Figure 8.62 Sector Unlock Sequence
Instruction = 26h23
CE#
SCK
SI 32
SO
1 0
3-byte Address
High Impedance
22 21 ...
0 1 2 3 4 5 6 78 9 10 ... 28 29 30 31
Mode 3
Mode 0
Figure 8.63 Sector Unlock QPI Sequence
26h
CE#
SCK
IO[3:0]
3-byte Address
0 1 2 3 4 5 6 7
Mode 3
Mode 0
23:20 19:16 15:12 11:8 7:4 3:0
Instruction
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SECTOR LOCK OPERATION (SECLOCK, 24h)
The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The
instruction code does not require an address to be specified, as only one sector can be enabled at a time. The
remaining sectors within the same block remain in read-only mode.
Figure 8.64 Sector Lock Sequence
Instruction = 24h
CE#
SCK
SI
0 1 2 3 4 5 6 7
Mode 3
Mode 0
SO High Impedance
Figure 8.65 Sector Lock QPI Sequence
24h
CE#
SCK
IO[3:0]
0 1
Mode 3
Mode 0
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9. ELECTRICAL CHARACTERISTICS
9.1 ABSOLUTE MAXIMUM RATINGS (1)
Storage Temperature
-65°C to +150°C
Surface Mount Lead Soldering Temperature
Standard Package
240°C 3 Seconds
Lead-free Package
260°C 3 Seconds
Input Voltage with Respect to Ground on All Pins
-0.5V to VCC + 0.5V
All Output Voltage with Respect to Ground
-0.5V to VCC + 0.5V
VCC
-0.5V to +6.0V
Electrostatic Discharge Voltage (Human Body Model)(2)
-2000V to +2000V
Notes:
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. ANSI/ESDA/JEDEC JS-001
9.2 OPERATING RANGE
Part Number
IS25LP064A
Operating Temperature (Extended Grade E)
-40°C to 105°C
Operating Temperature (Automotive Grade A3)
-40°C to 125°C
VCC Power Supply
2.7V (VMIN) – 3.6V (VMAX); 3.0V (Typ), Max. 133MHz
2.3V (VMIN) – 3.6V (VMAX); 3.0V (Typ), Max. 104MHz
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9.3 DC CHARACTERISTICS
(Under operating range)
Symbo
l
Parameter
Condition
Min
Typ(2)
Max
Units
ICC1
VCC Active Read current(3)
NORD at 50MHz,
5
9
mA
FRD Single at 133MHz
7
11
FRD Quad at 133MHz
10
14
FRD Quad DTR at 66MHz
10
14
ICC2
VCC Program Current
CE# = VCC
85°C
17
25
105°C
25
125°C
25
ICC3
VCC WRSR Current
CE# = VCC
85°C
17
25
105°C
25
125°C
25
ICC4
VCC Erase Current
(SER/BER32K/BER64K)
CE# = VCC
85°C
17
25
105°C
25
125°C
25
ICC5
VCC Erase Current (CE)
CE# = VCC
85°C
17
25
105°C
25
125°C
25
ISB1
VCC Standby Current
CMOS
CE# = VCC,
VIN = GND or VCC (4)
85°C
10
20(6)
µA
105°C
35(6)
125°C
60
ISB2
Deep power down
current
CE# = VCC,
VIN = GND or VCC (4)
85°C
5
10(6)
105°C
20(6)
125°C
30
ILI
Input Leakage Current
VIN = 0V to VCC
±1(5)
ILO
Output Leakage Current
VIN = 0V to VCC
±1(5)
VIL (1)
Input Low Voltage
-0.5
0.3VCC
V
VIH (1)
Input High Voltage
0.7VCC
VCC + 0.3
VOL
Output Low Voltage
VMIN < VCC < VMAX
IOL = 100 µA
0.2
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2
Notes:
1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may overshoot
VCC by +2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is -0.5V. During
voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to exceed 20ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at
VCC = VCC (Typ), TA=25°C.
3. Outputs are unconnected during reading data so that output switching current is not included.
4. VIN = Vcc for the dedicated RESET# pin (or ball).
5. The Max of ILI and ILO for the dedicated RESET# pin (or ball) is ±2 µA.
6. These parameters are characterized and are not 100% tested.
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9.4 AC MEASUREMENT CONDITIONS
Symbol
Parameter
Min
Max
Units
CL
Load Capacitance up to 104MHz
30
pF
Load Capacitance up to 133MHz
15
pF
TR,TF
Input Rise and Fall Times
5
ns
VIN
Input Pulse Voltages
0.2VCC to 0.8VCC
V
VREFI
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VREFO
Output Timing Reference Voltages
0.5VCC
V
Figure 9.1 Output test load & AC measurement I/O Waveform
OUTPUT PIN
1.8k
1.2k 15/30pf
0.8VCC
0.2VCC
Input VCC/2 AC
Measurement
Level
9.5 PIN CAPACITANCE
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
CIN
Input Capacitance
(CE#, SCK)
VIN = 0V
-
-
6
pF
CIN/OUT
Input/Output Capacitance
(other pins)
VIN/OUT = 0V
-
-
8
pF
Notes:
1. These parameters are characterized and are not 100% tested.
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9.6 AC CHARACTERISTICS
(Under operating range, refer to section 9.4 for AC measurement conditions)
Symbol
Parameter
Min
Typ(2)
Max
Units
fCT
Clock Frequency except for fast read
DTR and read (03h)
Vcc=2.7V~3.6V
0
133
MHz
Vcc=2.3V~3.6V
0
104
MHz
Clock Frequency for fast read DTR:
SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and
QPI DTR.
0
66
MHz
fC
Clock Frequency for read (03h)
0
50
MHz
tCLCH(1)
SCK Rise Time (peak to peak)
0.1
V/ns
tCHCL(1)
SCK Fall Time ( peak to peak)
0.1
V/ns
tCKH
SCK High Time
For read (03h)
0.45 x 1/fCmax
ns
For others
0.45 x 1/fCTmax
tCKL
SCK Low Time
For read (03h)
0.45 x 1/fCmax
ns
For others
0.45 x 1/fCTmax
tCEH
CE# High Time
7
ns
tCS
CE# Setup Time
6
ns
tCH
CE# Hold Time
6
ns
tDS
Data In Setup Time
STR
2
ns
DTR
1.5
tDH
Data in Hold Time
STR
2
ns
DTR
1.5
tV
Output Valid
@ 133MHz (CL = 15pF)
7
ns
@ 104MHz (CL = 30pF)
8
tOH
Output Hold Time
2
ns
tDIS(1)
Output Disable Time
8
ns
tHLCH
HOLD Active Setup Time relative to SCK
5
ns
tCHHH
HOLD Active Hold Time relative to SCK
5
ns
tHHCH
HOLD Not Active Setup Time relative to SCK
5
ns
tCHHL
HOLD Not Active Hold Time relative to SCK
5
ns
tLZ(1)
HOLD to Output Low Z
12
ns
tHZ(1)
HOLD to Output High Z
12
ns
tEC
Sector Erase Time (4Kbyte)
70
300
ms
Block Erase Time (32Kbyte)
0.1
0.5
s
Block Erase time (64Kbyte)
0.15
1.0
s
Chip Erase Time
16
45
s
tPP
Page Program Time
0.2
0.8
ms
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Symbol
Parameter
Min
Typ(2)
Max
Units
tRES1(1)
Release deep power down
3
µs
tDP(1)
Deep power down
3
µs
tW
Write Status Register time
2
15
ms
tSUS(1)
Suspend to read ready
100
µs
tSRST(1)
Software Reset recovery time
35
µs
tRESET(1),(3)
RESET# pin low pulse width
100
ns
tHWRST(1),(3)
Hardware Reset recovery time
35
µs
Notes:
1. These parameters are characterized and not 100% tested.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at
VCC = VCC (Typ), TA=25°C.
3. Only applicable to the parts that have the RESET# pin (or ball) option.
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9.7 SERIAL INPUT/OUTPUT TIMING
Figure 9.2 SERIAL INPUT/OUTPUT TIMING (Normal Mode) (1)
HI-Z
SO
SI
SCK
CE#
VALID IN
tCS
tCKH tCKL
tDS tDH
tCH
tCEH
tVtDIS
HI-Z
tOH
VALID IN
VALID OUTPUT
Note1. For SPI Mode 0 (0,0)
Figure 9.3 SERIAL INPUT/OUTPUT TIMING (DTR Mode) (1)
HI-Z
SO
SI
SCK
CE#
VALID IN
tCS
tCKH tCKL
tDS tDH
tCH
tCEH
tVtDIS
HI-Z
tOH
VALID INVALID IN
OutputOutput
tV
Note1. For SPI Mode 0 (0,0)
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Figure 9.4 HOLD TIMING
SI
SO
SCK
CE#
HOLD#
tCHHL
tHLCH
tCHHH
tHHCH
tHZ tLZ
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9.8 POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding
a simple pull-up resistor on CE# is recommended.)
Power up timing
VCC
VCC(max)
VCC(min)
V(write inhibit)
Reset State tVCE
tPUW
Read Access Allowed Device fully
accessible
Chip Selection Not Allowed
All Write Commands are Rejected
Symbol
Parameter
Min.
Max
Unit
tVCE(1)
Vcc(min) to CE# Low
1
ms
tPUW(1)
Power-up time delay to write instruction
1
10
ms
VWI(1)
Write Inhibit Voltage
2.1
V
Note: These parameters are characterized and not 100% tested.
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9.9 PROGRAM/ERASE PERFORMANCE
Parameter
Typ
Max
Unit
Sector Erase Time (4Kbyte)
70
300
ms
Block Erase Time (32Kbyte)
0.1
0.5
s
Block Erase Time (64Kbyte)
0.15
1.0
s
Chip Erase Time
16
45
s
Page Programming Time
0.2
0.8
ms
Byte Program
8
40
µs
Note: These parameters are characterized and not 100% tested.
9.10 RELIABILITY CHARACTERISTICS
Parameter
Min
Max
Unit
Test Method
Endurance
100,000
-
Cycles
JEDEC Standard A117
Data Retention
20
-
Years
JEDEC Standard A117
Latch-Up
-100
+100
mA
JEDEC Standard 78
Note: These parameters are characterized and not 100% tested.
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10. PACKAGE TYPE INFORMATION
10.1 8-PIN JEDEC 208MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (B)
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10.2 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (USON) PACKAGE 4X3MM (T)
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10.3 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 6X5MM (K)
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10.4 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8X6MM (L)
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10.5 16-LEAD PLASTIC SMALL OUTLINE PACKAGE (300 MILS BODY WIDTH) (M)
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10.6 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 4X6 BALL ARRAY (G)
(TOP VIEW)
(BOTTOM VIEW)
A1 Corner
Index Area
A1 Corner
Index Area
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10.7 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 5X5 BALL ARRAY (H)
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10.8 8-CONTACT EXTREMELY-THIN SMALL OUTLINE NO-LEAD (XSON) PACKAGE 4X4MM (E)
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11. ORDERING INFORMATION- Valid Part Numbers
IS25LP 064 A - J B L E
TEMPERATURE RANGE
E = Extended (-40°C to +105°C)
A3 = Automotive Grade (-40°C to +125°C)
PACKAGING CONTENT
L = RoHS compliant
PACKAGE Type(1),(2)
B = 8-pin SOIC 208mil
T = 8-contact USON 4x3mm
E = 8-contact XSON 4x4mm
K = 8-contact WSON 6x5mm
L = 8-contact WSON 8x6mm
M = 16-pin SOIC 300mil
G = 24-ball TFBGA 6x8mm 4x6 ball array
H = 24-ball TFBGA 6x8mm 5x5 ball array
W = KGD (Call Factory)
Option
J = Standard
R = Dedicated RESET# pin (or ball) option for 16-pin
SOIC/24-ball TFBGA
Q = QE bit set to 1
Die Revision
A = Revision A
Density
064 = 64 Megabit
BASE PART NUMBER
IS = Integrated Silicon Solution Inc.
25LP = FLASH, 2.3V ~ 3.6V, QPI
Notes:
1. Call Factory for other package options available.
2. For the RESET# (IO3) pin option instead of HOLD# (IO3) pin, call Factory.
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*Special Option: Order with SPA# U1302A for SFDP support
Density
Frequency
(MHz)
Order Part Number
Package(2)
64Mb
133
IS25LP064A-JBLE*
8-pin SOIC 208mil
IS25LP064A-QBLE*
8-pin SOIC 208mil
IS25LP064A-JTLE*
8-contact USON 4x3mm
IS25LP064A-QTLE*
8-contact USON 4x3mm
IS25LP064A-JELE*
8-contact XSON 4x4mm
IS25LP064A-QELE*
8-contact XSON 4x4mm
IS25LP064A-JKLE*
8-contact WSON 6x5mm
IS25LP064A-QKLE*
8-contact WSON 6x5mm
IS25LP064A-JLLE*
8-contact WSON 8x6mm
IS25LP064A-QLLE*
8-contact WSON 8x6mm
IS25LP064A-JMLE*
16-pin SOIC 300mil
IS25LP064A-RMLE*
16-pin SOIC 300mil
IS25LP064A-QMLE*
16-pin SOIC 300mil
IS25LP064A-JGLE*
24-ball TFBGA 6x8mm 4x6 ball array
IS25LP064A-JHLE*
24-ball TFBGA 6x8mm 5x5 ball array
IS25LP064A-RHLE*
24-ball TFBGA 6x8mm 5x5 ball array
IS25LP064A-JBLA3*
8-pin SOIC 208mil
IS25LP064A-QBLA3*
8-pin SOIC 208mil
IS25LP064A-JTLA3*
8-contact USON 4x3mm
IS25LP064A-QTLA3*
8-contact USON 4x3mm
IS25LP064A-JELA3*
8-contact XSON 4x4mm
IS25LP064A-QELA3*
8-contact XSON 4x4mm
IS25LP064A-JKLA3*
8-contact WSON 6x5mm
IS25LP064A-QKLA3*
8-contact WSON 6x5mm
IS25LP064A-JLLA3
8-contact WSON 8x6mm
IS25LP064A-QLLA3
8-contact WSON 8x6mm
IS25LP064A-JMLA3*
16-pin SOIC 300mil
IS25LP064A-RMLA3*
16-pin SOIC 300mil
IS25LP064A-QMLA3*
16-pin SOIC 300mil
IS25LP064A-JGLA3*
24-ball TFBGA 6x8mm 4x6 ball array
IS25LP064A-JHLA3*
24-ball TFBGA 6x8mm 5x5 ball array
IS25LP064A-RHLA3*
24-ball TFBGA 6x8mm 5x5 ball array
