51MT160K - International Rectifier

55 A

90 A

110 A

THREE PHASE CONTROLLED BRIDGE

Bulletin I27503 08/97

MT..KB SERIES

Power Modules

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53MT.KB 93MT.KB 113MT.KB

Parameters 52MT.KB 92MT.KB 112MT.KB Units

51MT.KB 91MT.KB 111MT.KB

IO 55 90 110 A

@ TC 85 85 85 °C

IFSM @ 50Hz 390 950 1130 A

@ 60Hz 410 1000 1180 A

I2t @ 50Hz 770 4525 6380 A2s

@ 60Hz 700 4130 5830 A2s

I2√t 7700 45250 63800 A2√s

VRRM range 800 to 1600 V

TSTG range - 40 to 125 °C

TJ range - 40 to 125 °C

Major Ratings and Characteristics

Features

Package fully compatible with the industry standard INT-A-pak

power modules series

High thermal conductivity package, electrically insulated case

Outstanding number of power encapsulated components

Excellent power volume ratio

4000 VRMS isolating voltage

UL E78996 approved

Description

A range of extremely compact, encapsulated three phase

controlled bridge rectifiers offering efficient and reliable

operation. They are intended for use in general purpose

and heavy duty applications.

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53-93-113MT..KB Series

Bulletin I27503 08/97

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

IO Maximum DC output current 55 90 110 A 120° Rect conduction angle

@ Case temperature 85 85 85 °C

ITSM Maximum peak, one-cycle 390 950 1130 A t = 10ms No voltage

forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied

on state surge current 330 800 950 t = 10ms 100% VRRM

345 840 1000 t = 8.3ms reapplied Initial

I2t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.

700 4130 5830 t = 8.3ms reapplied

540 3200 4510 t = 10ms 100% VRRM

500 2920 4120 t = 8.3ms reapplied

I2√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied

VT(TO)1 Low level value of threshold 1.17 1.09 1.04 V (16.7% x π x IT(AV) < I < π x I T(AV)), @ TJ max.

voltage

VT(TO)2 High level value of threshold 1.45 1.27 1.27 (I > π x IT(AV)), @ TJ max.

voltage

rt1 Low level value on-state 12.40 4.10 3.93 mΩ (16.7% x π x I T(AV) < I < π x IT(AV)), @ TJ max.

slope resistance

rt2 High level value on-state 11.04 3.59 3.37 (I > π x IT(AV)), @ TJ max.

slope resistance

VTM Maximum on-state voltage drop 2.68 1.65 1.57 V Ipk = 150A, TJ = 25°C

tp = 400µs single junction

di/dt Max. non-repetitive rate 150 A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x I T(AV),

of rise of turned on current Ig = 500mA, tr < 0.5 µs, tp > 6 µs

IH Max. holding current 200 TJ = 25oC, anode supply = 6V,

mA resistive load, gate open circuit

IL Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

Forward Conduction

Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM/IDRM max.

Type number Code repetitive peak non-repetitive peak peak off-state voltage @ TJ = 125°C

reverse voltage reverse voltage gate open circuit

V V V mA

80 800 900 800

100 1000 1100 1000

53/52/51MT..KB 120 1200 1300 1200 10

140 1400 1500 1400

160 1600 1700 1600

80 800 900 800

93/92/91MT..KB 100 1000 1100 1000

113/112/111MT..KB 120 1200 1300 1200 20

140 1400 1500 1400

160 1600 1700 1600

ELECTRICAL SPECIFICATIONS

Voltage Ratings

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53-93-113MT..KB Series

Bulletin I27503 08/97

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

VINS RMS isolation voltage 4000 V TJ = 25oC all terminal shorted

f = 50Hz, t = 1s

dv/dt Max. critical rate of rise 500 V/µs TJ = TJ max., linear to 0.67 VDRM,

of off-state voltage (*) gate open circuit

Blocking

(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.

Triggering

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

PGM Max. peak gate power 10 W TJ = TJ max.

PG(AV) Max. average gate power 2.5

IGM Max. peak gate current 2.5 A

-VGT Max. peak negative 10 V

gate voltage

VGT Max. required DC gate 4.0 V TJ = - 40°C

voltage to trigger 2.5 TJ = 25°C Anode supply = 6V, resistive load

1.7 TJ = 125°C

IGT Max. required DC gate 270 TJ = - 40°C

current to trigger 150 mA TJ = 25°C Anode supply = 6V, resistive load

80 TJ = 125°C

VGD Max. gate voltage 0.25 V @ TJ = TJ max., rated VDRM

applied

that will not trigger

IGD Max. gate current 6 mA

that will not trigger

Thermal and Mechanical Specifications

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

TJ Max. junction operating -40 to 125 °C

temperature range

Tstg Max. storage temperature -40 to 125 °C

range

RthJC Max. thermal resistance, 0.18 0.14 0.12 K/W DC operation per module

junction to case 1.07 0.86 0.70 DC operation per junction

0.19 0.15 0.12 120° Rect condunction angle per module

1.17 0.91 0.74 120° Rect condunction angle per junction

RthCS Max. thermal resistance, 0.03 K/W Per module

case to heatsink Mounting surface smooth, flat an greased

T Mounting to heatsink 4 to 6 Nm

torque ± 10% to terminal 3 to 4

wt Approximate weight 225 g

A mounting compound is recommended and the

torque should be rechecked after a period of 3

hours to allow for the spread of the compound.

Lubricated threads.

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53-93-113MT..KB Series

Bulletin I27503 08/97

1 2 3

1 - Current rating code: 5 = 55 A (Avg)

9= 90 A (Avg)

11 = 110 A (Avg)

2 - Circuit configuration code: 3 = Full-controlled bridge

2= Positive half-controlled bridge

1= Negative half-controlled bridge

3 - Essential part number

4 - Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)

5 - Generation II

6 - Critical dv/dt: None = 500V/µs (Standard value)

S90 = 1000V/µs (Special selection)

Device Code

Ordering Information Table

5 6

11 3 MT 160 K B S90

Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.

Devices Units

180o 120o 90o 60o 30o 180o 120o 90o 60o 30o

53/52/51MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 K/W

93/92/91MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100

113/112/111MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at di fferent conduction angles than DC)

NOTE: To order the Optional Hardware see Bulletin I27900

negative half-controlled bridge

(51, 91, 111MT..KB)

positive half-controlled bridge

(52, 92, 112MT..KB)

full-controlled bridge

(53, 93, 113MT..KB)

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53-93-113MT..KB Series

Bulletin I27503 08/97

Outline Table (with optional barriers)

All dimensions in millimeters (inches)

Outline Table (without optional barriers)

All dimensions in millimeters (inches)

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 2 - Forward Voltage Drop Characteristics

Fig. 3 - Total Power Loss Characteristics

Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 1 - Current Ratings Characteristic

100

110

120

130

0 10 20 30 40 50 60

Maximum Allowable Case Temperature (°C)

Total O utpu t Cur r e nt ( A)

120°

(Rect)

53MT..KB Ser ies

100

1000

0 1 2 3 4 5 6 7

T = 25°C

Instantaneous On-stat e C u rrent (A)

Instan tane o u s On-stat e Voltag e ( V)

53MT. .KB S er ies

Per J u nction

T = 125°C

0 25 50 75 100 12 5

Maximum Allowable Ambient Temperature (°C)

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

R = 0.05 K/W - Delta R

thSA

0.12 K/W

0.2 K/W

0.4 K/W

100

120

140

160

180

200

220

0 5 10 15 20 25 30 35 40 45 50 55

Total Output C urrent ( A )

Maximum Total Power Loss (W)

120°

(Rect)

53MT..KB Series

T = 125°C

150

200

250

300

350

1 10 100

Nu mb er Of E qual A mp litude Ha lf Cycle Current Pulses (N )

Peak Half Sine Wave On-state Current (A)

53MT..KB Series

Per Junction

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM J

150

200

250

300

350

400

0. 01 0.1 1

Peak H alf Sine W ave O n-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive S urge Current

Versus P u lse Train Duration. C ontrol

Of Conduction M ay Not Be Maintained.

Initial T = 125°C

No V o ltag e R e app lied

Ra ted V R e app lied

RRM

53MT. .KB S er ies

Per Junction

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Total Power Loss Characteristics

Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current

Fig. 6 - Current Ratings Characteristic

100

110

120

130

0 20 40 60 80 100

Maxim um Allowa ble C ase Tem pe rature (°C)

Total Output Current (A)

120°

(Rect)

93MT..KB Ser ies

100

1000

0. 5 1 1.5 2 2.5 3 3.5 4

T = 25°C

Instantaneous On-state Current (A)

Instan tane o u s On-stat e Volta g e ( V)

93MT..KB Series

Per Junction

T = 125°C

0 25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

R = 0.05 K/W - Delta R

thSA

0.2 K/W

0.12 K/W

0.4 K/W

100

150

200

250

300

0 10 20 30 40 50 60 70 80 90

Total Output Current (A)

Ma xim um Tot al Powe r Los s (W )

120°

(Rect)

93MT. .KB S e ries

T = 125 °C

400

450

500

550

600

650

700

750

800

850

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Cu rre nt (A)

93MT. .KB S er ies

Per Junction

At A ny Rated Loa d Co ndition A nd Wi th

Rated V Applied Following Surge.

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

300

400

500

600

700

800

900

1000

0.0 1 0.1 1

Peak H alf Sine W ave O n-state Current (A)

Pulse Train Duration (s)

Versus Pulse Tra in Duration. C ont rol

Of Conduction May Not Be Maintained.

93MT. .KB S er ies

Per Junction

Initial T = 125°C

No V o ltag e R e app lied

Ra ted V R e app lied

Maxim um Non Repetitive Surge Current

RRM

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 12 - Forward Voltage Drop Characteristics

Fig. 13 - Total Power Loss Characteristics

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

Fig. 11 - Current Ratings Characteristic

100

110

120

130

0 20 40 60 80 100 120

Maximum Allowable Case Temperature (°C)

Total Output Current (A)

120°

(Rect)

11 3MT ..KB S eri es

100

1000

0.5 1 1. 5 2 2.5 3 3. 5 4

T = 25°C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

11 3MT..K B S erie s

Per Junction

T = 125°C

0 25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

R = 0.05 K/W - Delta R

thSA

0.12 K/W

0.4 K/W

0.2 K/W

100

150

200

250

300

350

0 10 20 30 40 50 60 70 80 90 100110

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

113MT..KB Series

T = 125°C

400

500

600

700

800

900

1000

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And With

Rate d V A pp lie d Fo llow in g Sur ge.

RRM

Peak Half Sine Wave On-state Current (A)

11 3MT..K B S erie s

Per Junction

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

400

500

600

700

800

900

1000

1100

1200

0.01 0.1 1

Peak H alf Sine W ave O n-state Current (A)

Pulse Train Duration (s)

Versus P u lse T rain D uration. Contr ol

Of Conduction May Not Be Maintained.

11 3MT..K B Ser ies

Per Junction

Initial T = 125°C

No Voltage Reapplied

Ra ted V R e app lied

Maximum Non Repetitive Su rge Cur rent

RRM

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 16 - Thermal Impedance ZthJC Characteristics

Fig. 17 - Gate Characteristics

0.1

100

0.001 0.0 1 0. 1 1 10 100 1000

(b) (a)

Rectangular gate pulse

(4) (3) (2) (1)

(1) PG M = 100 W, tp = 500 µs

(2) PG M = 50 W, tp = 1 m s

(3) PG M = 20 W , tp = 25 ms

(4) PG M = 10 W, tp = 5 m s

Instantaneous Ga te C ur rent (A)

Inst a ntan eous Gate Voltage (V)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

VGD IGD Frequency Limited by PG(AV)

rated di/dt: 20 V, 30 ohms

tr = 0 .5 µs, tp >= 6 µs

<= 30% rated di/dt: 20 V, 65 ohms

tr = 1 µ s, tp >= 6 µs

a) Recomm ended loa d line for

b) Recomm ended load line for

53 / 93/ 1 13MT . .K B Ser ies

0.001

0.01

0.1

0.0 01 0.01 0. 1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

Per Junction

53MT. .KB S er ies

113 M T .. K B S eries

93 M T .. K B S eries

Steady State Value

R = 1.07 K/W

R = 0.86 K/W

R = 0.70 K/W

(DC O peration)

thJC

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