LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 202
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
v02.0208
General Description
Features
Functional Diagram
Output IP3: +39 dBm
P1dB: +30.5 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
Electrical Speci cations[1], TA = +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA [2]
Typical Applications
This HMC-APH518 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
The HMC-APH518 is a two stage GaAs HEMT MMIC
1 Watt Power Ampli er which operates between
21 and 24 GHz. The HMC-APH518 provides 17 dB
of gain, and an output power of +30.5 dBm at 1 dB
compression from a +5V supply voltage. All bond
pads and the die backside are Ti/Au metallized and
the ampli er device is fully passivated for reliable
operation. The HMC-APH518 GaAs HEMT MMIC 1
Watt Power Ampli er is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
HMC-APH518
Parameter Min. Typ. Max. Units
Frequency Range 21 - 24 GHz
Gain 16 17 dB
Input Return Loss 15 dB
Output Return Loss 8dB
Output power for 1dB Compression (P1dB) 28 30.5 dBm
Output Third Order Intercept (IP3) 37 39 dBm
Supply Current (Idd1+Idd2) 950 mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 203
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Fixtured Pout vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
-30
-25
-20
-15
-10
-5
0
21 21.5 22 22.5 23 23.5 24
RETURN LOSS (dB)
FREQUENCY (GHz)
-14
-12
-10
-8
-6
-4
-2
0
21 21.5 22 22.5 23 23.5 24
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
21 21.5 22 22.5 23 23.5 24
GAIN (dB)
FREQUENCY (GHz)
28
30
32
34
36
38
40
42
21 22 23 24 25 26
P1dB
IP3 @ 18dBm/tone
POUT (dBm), IP3 (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 204
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Drain Bias Voltage +5.5 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
RF Input Power 15 dBm
Thermal Resistance
(Channel to die bottom) 23.9 °C/W
Channel Temperature 180 °C
Storage Temperature -65 °C to +150 °C
Drain Bias Current (Idd1) 600 mA
Drain Bias Current (Idd2) 670 mA
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 205
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled and matched to
50 Ohms.
2RFOUT This pad is AC coupled and matched to
50 Ohms.
3, 5 Vdd1, Vdd2 Power Supply Voltage for the ampli er. See assembly for
required external components.
4, 6 Vgg1, Vgg2
Gate control for ampli er. Please follow “MMIC Ampli er Bias-
ing Procedure” application note. See assembly for required
external components.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 206
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
Assembly Diagram
HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 207
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin  lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin  lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D