IRFL4310
HEXFET® Power MOSFET
PD - 91368B
S
D
G
VDSS = 100V
RDS(on) = 0.20W
ID = 1.6A
5/11/99
Description
lSurface Mount
lDynamic dv/dt Rating
lFast Switching
lEase of Paralleling
lAdvanced Process Technology
lUltra Low On-Resistance
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Absolute Maximum Ratings
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Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Parameter Typ. Max. Units
RqJA Junction-to-Amb. (PCB Mount, steady state)* 93 120
RqJA Junction-to-Amb. (PCB Mount, steady state)** 48 60
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.2
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.3
IDM Pulsed Drain Current 13
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy47 mJ
IAR Avalanche Current 1.6 A
EAR Repetitive Avalanche Energy* 0.10 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,
TSTG Junction and Storage Temperature Range -55 to + 150 °C
A
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, ID = 1mA
0.20 WVGS = 10V, ID = 1.6A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 1.5 S VDS = 50V, ID = 0.80 A
25 µA VDS = 100V, VGS = 0V
250 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage 100 nA VGS = 20V
Gate-to-Source Reverse Leakage -100 VGS = -20V
QgTotal Gate Charge 17 25 ID = 1.6A
Qgs Gate-to-Source Charge 2.1 3.1 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge 7.8 12 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 7.8 VDD = 50V
trRise Time 18 ns ID = 1.6A
td(off) Turn-Off Delay Time 34 RG = 6.2 W
tf Fall Time 20 RD = 31 W, See Fig. 10
Ciss Input Capacitance 330 VGS = 0V
Coss Output Capacitance 92 pF VDS = 25V
Crss Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD £ 1.6A, di/dt £ 340A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 9.2 mH
RG = 25W, IAS = 3.2A. (See Figure 12) Pulse width £ 300µs; duty cycle £ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 1.6A, VGS = 0V
trr Reverse Recovery Time 72 110 ns TJ = 25°C, IF = 1.6A
Qrr Reverse RecoveryCharge 210 320 nC di/dt = 100A/µs
13
0.91
A
Source-Drain Ratings and Characteristics
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Package Outline
SOT-223 (TO-261AA) Outline
SOT-223
Part Marking Information
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK BOTTOM
PART NUMBER
TOP
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THIS IS AN IRFL014
WAFER
LOT CODE
XXXXXX
314
FL014
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SOT-223 Outline
Tape & Reel Information
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
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http://www.irf.com/ Data and specifications subject to change without notice. 5/99
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