PHOTODIODE Si PIN photodiode S5971, S5972, S5973 series High-speed photodiodes (S5973 series: 1.5 GHz) S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. S5973 series includes a mini-lens type (S5973-01) that can be efficiently coupled to an optical fiber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection. Features Applications l High-speed response l Optical fiber communications l High-speed photometry l Violet laser detection (S5973-02) S5971 : 100 MHz (VR=10 V) S5972 : 500 MHz (VR=10 V) S5973 series: 1.5 GHz (VR=10 V) l Low price l High sensitivity S5973-02: 0.3 A/W, QE=91 % (=410 nm) l High reliability General ratings / Absolute maximum ratings Type No. S5971 S5972 S5973 S5973-01 S5973-02 Dimensional outline/ Window material *1 Package Active area size Effective active area (mm) f1.2 f0.8 (mm2) 1.1 0.5 f0.4 0.12 (mm) /K TO-18 20 /L /K Electrical and optical characteristics Type No. S5971 S5972 S5973 S5973-01 S5973-02 Spectral Peak response sensitivity range wavelength l lp (nm) 320 to 1060 320 to 1000 (nm) Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mW) (C) (C) 50 -40 to +100 -55 to +125 Terminal Temp. Short Dark Cut-off coefficient circuit current capacitance frequency Ct of current I, fc V4=10 V V4=10 V I, Isc V4=10 V 830 100 lx T+1, (nA) f=1 MHz nm (A) Typ. Max. (times/C) (GHz) (pF) (W/Hz1/2) 0.6 1.0 0.07 1 7.4 x 10-15 0.55 0.42 0.09 0.42 0.06 0.01 0.5 0.002 0.1 Photo sensitivity S (A/W) lp 660 nm 780 nm 900 0.64 800 0.57 0.44 760 Reverse voltage V4 Max. (V) 0.52 0.55 0.51 0.47 2 0.45 0.3 * 0.42 0.37 0.1 1.15 0.5 1.5 3 1.5 NEP V4=10 V 3.1 x 10-15 1.5 x 10-15 1.6 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: l=410 nm 1 Si PIN photodiode Spectral response Photo sensitivity temperature characteristics (Typ. Ta=25 C) 0.7 TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 S5973-02 S5972 0.3 S5973/-01 0.2 0.1 400 600 800 (Typ.) +1.5 S5971 0 200 S5971, S5972, S5973 series S5971 +1.0 S5972 S5973 SERIES +0.5 0 -0.5 200 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KPINB0158EA KPINB0157EA Frequency response +10 Cut-off frequency vs. reverse voltage (Typ. Ta=25 C, =830 nm, RL=50 , VR=10 V) (Typ. Ta=25 C, =830 nm, RL=50 ) 10 GHz CUT-OFF FREQUENCY RELATIVE OUTPUT (dB) S5973 SERIES S5973 SERIES 0 -3 S5971 -10 S5971 10 MHz 10 MHz 100 MHz 1 GHz 10 GHz 1 10 100 REVERSE VOLTAGE (V) FREQUENCY KPINB0159EA 2 S5972 100 MHz S5972 -20 1 MHz 1 GHz KPINB0160EA Si PIN photodiode Dark current vs. reverse voltage S5971, S5972, S5973 series Terminal capacitance vs. reverse voltage (Typ. Ta=25 C) (Typ. Ta=25 C, f=1 MHz) 100 pA TERMINAL CAPACITANCE 100 pF DARK CURRENT S5971 10 pA S5972 1 pA S5973 SERIES S5971 10 pF S5972 S5973 SERIES 100 fA 0.1 10 1 1 pF 0.1 100 1 REVERSE VOLTAGE (V) 10 100 REVERSE VOLTAGE (V) KPINB0162EA KPINB0161EA Fiber coupling characteristics (S5973-01) X, Y direction (Typ. Ta=25 C, =780 nm, NA=0.2) 0.5 0.4 0.3 0.2 OPTICAL FIBER (CORE DIAMETER: 50 m) Y X Z 0.1 0 -0.8 LIGHT SOURCE=780 nm LD Z=0.5 mm -0.4 0 +0.4 (Typ. Ta=25 C, =780 nm, NA=0.2) 0.6 FIBER-COUPLED SENSITIVITY (A/W) 0.6 FIBER-COUPLED SENSITIVITY (A/W) Z direction +0.8 SHIFT FROM LENS CENTER X, Y (mm) 0.5 0.4 OPTICAL FIBER (CORE DIAMETER: 50 m) 0.3 Y 0.2 X Z LIGHT SOURCE =780 nm LD X, Y= 0 mm 0.1 0 0.2 0.5 1 2 5 10 20 DISTANCE BETWEEN LENS AND FIBER END Z (mm) KPINB0088EA KPINB0089EA 3 Si PIN photodiode S5971, S5972, S5973 series Dimensional outlines (unit: mm) 4.6 0.1 13.5 0.45 LEAD 13 0.45 LEAD 2.8 PHOTOSENSITIVE SURFACE 2.8 PHOTOSENSITIVE SURFACE 5.4 0.2 WINDOW 1.5 LENS 4.7 0.1 3.75 0.2 5.4 0.2 3.6 0.2 WINDOW 3.0 0.2 S5973-01 0.65 0.15 S5971, S5972, S5973 2.54 0.2 2.54 0.2 CASE CASE KPINA0022EB KPINA0023EA S5973-02 0.45 LEAD 4.0 0.2 4.6 0.1 13 PHOTOSENSITIVE SURFACE 5.4 0.2 2.8 WINDOW 2.0 MIN. 2.54 0.2 CASE KPINA0061EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KPIN1025E03 Mar. 2003 DN