D44H8 - ON Semiconductor - Product.Network

October, 2011 − Rev. 11

1Publication Order Number:

D44H/D

D44H Series (NPN),

D45H Series (PNP)

Complementary Silicon

Power Transistors

These series of plastic, silicon NPN and PNP power transistors can

be used as general purpose power amplification and switching such as

output or driver stages in applications such as switching regulators,

converters and power amplifiers.

Features

•Low Collector−Emitter Saturation Voltage

VCE(sat) = 1.0 V (Max) @ 8.0 A

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

D44H8, D45H8

D44H11, D45H11

VCEO

Vdc

Emitter Base Voltage VEB 5.0 Vdc

Collector Current

− Continuous

− Peak (Note 1)

Adc

Total Power Dissipation

@ TC = 25°C

@ TA = 25°C

2.0

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.8 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

TL275 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

D44H8 TO−220

TO−220AB

CASE 221A−09

STYLE 1

50 Units/Rail

10 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS 60, 80 VOLTS

MARKING

DIAGRAM

D4xHyyG

AYWW

http://onsemi.com

D45H8G TO−220

(Pb−Free)

50 Units/Rail

ORDERING INFORMATION

D44H11 TO−220 50 Units/Rail

D45H8 TO−220 50 Units/Rail

D45H11 TO−220 50 Units/Rail

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

D4xHyy = Device Code

x = 4 or 5

yy = 8 or 11

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

D45H11G TO−220

(Pb−Free)

50 Units/Rail

D44H11G TO−220

(Pb−Free)

50 Units/Rail

D44H8G TO−220

(Pb−Free)

50 Units/Rail

D44H Series (NPN),

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage D44H8, D45H8

(IC = 30 mAdc, IB = 0 Adc) D44H11, D45H11

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 5.0 Vdc)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(VCE = 1.0 Vdc, IC = 2.0 Adc)

(VCE = 1.0 Vdc, IC = 4.0 Adc)

ÎÎÎÎ

hFE

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.4 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Capacitance

(VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series

D45H Series

ÎÎÎÎ

Ccb

ÎÎÎÎ

−

ÎÎÎÎ

160

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series

D45H Series

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING TIMES

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Delay and Rise Times

(IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series

D45H Series

ÎÎÎÎ

td + tr

ÎÎÎÎ

−

ÎÎÎÎ

300

135

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series

D45H Series

ÎÎÎÎ

−

ÎÎÎÎ

500

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series

D45H Series

ÎÎÎÎ

−

ÎÎÎÎ

140

100

ÎÎÎÎ

−

ÎÎÎ

D44H Series (NPN),

http://onsemi.com

Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.10.01

100

1000

1010.10.01

100

1000

hFE, DC CURRENT GAIN

VCE = 1 V

125°C

hFE, DC CURRENT GAIN

Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.10.01

100

1000

1010.10.01

100

1000

hFE, DC CURRENT GAIN

VCE = 5 V

hFE, DC CURRENT GAIN

Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.1

0.05

0.40

1010.1

0.1

0.3

0.6

SATURATION VOLTAGE (VOLTS)

VCE(sat) @ IC/IB = 10

SATURATION VOLTAGE (VOLTS)

−40°C

25°C

VCE = 1 V

125°C

−40°C

25°C

125°C

−40°C

25°C

VCE = 5 V

125°C

−40°C

25°C

125°C

−40°C

25°C

0.10

0.15

0.20

0.25

0.30

0.35

0.2

0.5

0.4

VCE(sat) @ IC/IB = 10

125°C

−40°C

25°C

D44H Series (NPN),

http://onsemi.com

Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.1

0.2

1.2

1010.1

0.2

0.6

1.4

SATURATION VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

SATURATION VOLTAGE (VOLTS)

125°C

−40°C

25°C

0.4

0.6

0.8

1.0

0.4

1.0

0.8

VBE(sat) @ IC/IB = 10

125°C

−40°C

25°C

1.2

100

1.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0 10

TC ≤ 70° C

DUTY CYCLE ≤ 50%

2.0 3.0 20 30 50 100

1.0

7.0

D44H/45H8

D44H/45H10,11

Figure 9. Maximum Rated Forward Bias

Safe Operating Area

1.0 ms

0.1

0.2

0.3

0.5

2.0

3.0

5.0

10 ms

100 ms

1.0 ms

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Power Derating

T, TEMPERATURE (°C)

40 60 100 120 160

2.0

1.0

3.0

80 140

PD, POWER DISSIPATION (WATTS)

t, TIME (ms)

0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k

0.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

ZqJC(t) = r(t) RqJC

RqJC = 1.56°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 11. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.02 100 200

0.1

0.02

0.01

D44H Series (NPN),

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

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D44H/D

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