2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 900 900 2.6 10.4 30 2.6 EAS 349.1 9.0 40 5 90 1.67 +150 EAR dV DS /dt dV/dt PD Tch Tstg -55 to +150 Unit V V A A V A Remarks VGS=-30V Note *1 Equivalent circuit schematic mJ Note *2 mJ kV/s kV/s W W C C Note *3 VDS < = 900V Note *4 Tc=25C Ta=25C Drain(D) Gate(G) Source(S) Note *1 Tch< =150C Note *2 Starting Tch=25C, IAS=1.1A, L=524mH, VCC=100V, RG=50 EAS limited by maximum channel temperrature and avalanche current. See to `Avalanche Energy' graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to `Transient Thermal impedance' graph. Note *4 IF < = 150C = BVDSS, Tch < = -ID, -di/dt=50A/s, Vcc < Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V VDS=720V VGS=0V VGS=30V VDS=0V ID=1.3A VGS=10V Typ. 900 3.0 Tch=25C Tch=125C ID=1.3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=1.3A VGS=10V 1.3 RGS=10 VCC =450V ID=2.6A VGS=10V IF=2.6A VGS=0V Tch=25C IF=2.6A VGS=0V -di/dt=100A/s Tch=25C Max. 5.0 25 250 100 6.4 Units V V A nA S pF 4.8 2.6 330 44 2.5 10.5 6.5 28 20 13 4.5 4.3 1.00 1.5 4.0 495 66 5.0 15.8 9.8 42 30 19.5 6.5 6.8 1.50 Typ. Max. Units 1.39 75.0 C/W C/W ns nC V s C Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. 1 2SK3983-01L,S,SJ(900V/2.6A/6.4) FUJI POWER MOSFET Characteristics http://store.iiic.cc/ 2 2SK3983-01L,S,SJ(900V/2.6A/6.4) http://store.iiic.cc/ FUJI POWER MOSFET 3 2SK3983-01L,S,SJ(900V/2.6A/6.4) FUJI POWER MOSFET Outline Drawings [mm] T-pack(L) T-pack(S) T-pack(SJ)/D2-pack http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4