Jan./1999 (Preliminary | Mitsubishi Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric DESCRIPTION The MGF1001P is a MMIC designed for use in dual frequency oscilltor. FEATURES * Phase Noise : -90.0dBe/Hz (typ.) * Oscillation Output power : 5.00dBm (typ) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1001P Dual Oscilltor MMIC Outline Drawing i sa Unit : mm APPLICATION 2] Dual Frequency Oscilltor oo QUALITY GRADE TH iH i ___ * General Grade (GG) 3 4 5 = | 0.95 1.GND 0.6MAX 2.L01 RECOMMENDED BIAS CONDITIONS 3.GND VDD= 4V 4.VDD/OUT LO1= OV,-1.5V 5.GND LO2= -1.5V,0V GD-25 6.LO2 Keep safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS _ra=25C) MITSUBISHI ELECTRIC Corporation puts the Symbol Parameter Ratings Unit maximum effort into making semiconductor products ; better and more reliable , but there is always the VDD DC Bias Voltage T.B.D. Vv possibility that trouble may occur with them. Trouble . with semiconductors may lead to personal injury , VLO DC Switch Voltage TBD. Vv fire or property damage. Remember to give due Tstg Storage Temperature T.B.D. Cc consideration to safety when making your circuit . designed , with appropriate measure such as (i) Top Operating Temperature TBD. x placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction mishap. ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol Parameter Test Conditions Limits Unit Min. Typ. Max IDD DC Bias Current VDD=4V - 25 - mA fosc1 Oscillation Frequency Range Vi01=0V 9.75 -- 10.6 GHz Posc1 Oscillaion Output Power Vio2=-1.5V - 5 - dBm 1 Phase Noise 10KHz offset - -90 . dBe/Hz IDD DC Bias Current VDD=4V 25 - mA fosc2 Oscillation Frequency Range Vio1=-1.5V 9.75 - 10.6 GHz Posce Oscillaion Output Power Vio2=0V - 5 dBm D2 Phase Noise 10KHz offset ~ -90 dBe/Hz MITSUBISHI ELECTRIC (1/72) Jan./1999 ( Preliminary } MITSUBISHI! SEMICONDUCTOR <GaAs FET> MGF1001P . soe . Dual Oscilltor MMIC Mitsubishi Proprietary Not to be reproduced or disclosed i without permission by Mitsubishi Electric Evaluation Result (Ta=25C) ATTEN S05 ZNMER -63. BSBd35ca5 RL 20. OdRm LOdkR/ tO. OKHe | 9.75GHz -- VDD=4V - Vio1=0V.Vio2=-1.5V i Phase Noise=-93.3dBe/Hz (10kHz offset) Pose!=7dBm ZMK R LO. DP IKkHeaz ODO) _s3| 33 |as S Ane ANA, Aacaut yo nA pea Ad at-adak VN NY TW CENTER S&S. 7S0G482G6H2z SPAN 1O0. OlkHaz REBwW 1. OkH-e ae \/ EB Ww BOW sz SWre SB. 42AOs ec: ATTEN S3O0OcB LOMIAK FR -OGHl. BSSseqdkB Ri 20. Odem LoOodRT Lod. Cohe Net f10.6GHz - Vop=4V - Viei=-1.5V,Vie2=0V i Phase Noise=91.8dBe/Hz (10kHz offset) Posc2=6dBm aoMiK rR 10. Pp KHe 3 -Gil}, Ss Job S Alta ajyndwoacyltt HANNA A Ate at rrr uf ye me ey CENTER 1O. GOOS45 2Gltz SPAR 1OO. OK; =z RRBW 1. KHz eV RW ROS Swe 3. 4 Oscer MITSUBISHI ELECTRIC (272)