Non Magnetic SMQ MELF PIN Diode
Rev. V3
MA4P7452F-1072T
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Features
Non-Magnetic Package Suitable for MRI
Applications
Rectangular MELF SMQ Ceramic Package
Hermetically Sealed
Low Rs for Low Series Loss
Long L for Lower Intermodulation Distortion
Low Cj for High Series Isolation
High Average Incident Power Handling
RoHS Compliant
Description
The MA4P7452F-1072T is a surface mountable
PIN diode in a non-magnetic, Metal Electrode
Leadless Faced (MELF) package. The device in-
corporates M/A-COM Technology Solutions time
proven HIPAX technology to produce a low induc-
tance ceramic package with no ribbons or whisker
wires. Incorporated in the package is a hard glass
passivated, CERMACHIP™ PIN chip that is full
face bonded on both the cathode and anode to
maximize surface area for the lowest electrical and
thermal resistance. The package utilizes a non-
magnetic plating process that provides for a pack-
age with extremely low permeability. The
MA4P7452F-1072T has been comprehensively
characterized both electrically and mechanically to
ensure repeatable and predictable performance.
The non-magnetic MA4P7452F-1072T is the elec-
trical equivalent of its magnetic counterpart the
MA4P7002F-1072T.
Applications
This diode is well suited for use in low loss, low
distortion, high power switching circuits and can
be used in high magnetic field environments at HF
through UHF frequencies. The low thermal resis-
tance of this device provides excellent perform-
ance at high RF power incident levels, up to 100
watts CW. This device is designed to meet the
most demanding electrical and mechanical MRI
environments.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high
volume tape and reel assembly. The rectangular
package design provides for highly efficient
automatic pick and place assembly techniques. The
parallel flat surfaces are suitable for key jaw or
vacuum pickup. All solderable surfaces are tin plated
and compatible with reflow and vapor phase solder-
ing methods.
Parameter Absolute Maximum
Operating Temperature -65 °C to +125°C
Storage Temperature -65 °C to +150°C
Diode Junction Temperature +175 °C Continuous
Diode Mounting Temperature +235°C for 10 seconds
RF C.W. Incident Power + 50 dBm C.W.
Forward D.C. Current + 250 mA
Reverse D.C. Voltage @ -10uA l - 150 V l
Absolute Maximum Ratings1 @ 25°C
1. Exceeding these limits may cause permanent damage.
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