19-4177; Rev 0; 7/08 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer The MAX19996 single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.6dB noise figure for 2000MHz to 3000MHz WCS, LTE, WiMAXTM, and MMDS wireless infrastructure applications. With an 1800MHz to 2550MHz LO frequency range, this particular mixer is ideal for low-side LO injection receiver architectures. High-side LO injection is supported by the MAX19996A, which is pin-for-pin and functionally compatible with the MAX19996. In addition to offering excellent linearity and noise performance, the MAX19996 also yields a high level of component integration. This device includes a double-balanced passive mixer core, an IF amplifier, and an LO buffer. On-chip baluns are also integrated to allow for singleended RF and LO inputs. The MAX19996 requires a nominal LO drive of 0dBm, and supply current is typically 230mA at VCC = +5.0V or 149.5mA at VCC = +3.3V. The MAX19996 is pin compatible with the MAX19996A 2300MHz to 3900MHz mixer. The device is also pin similar with the MAX9984/MAX9986 400MHz to 1000MHz mixers and the MAX9993/MAX9994/MAX9996 1700MHz to 2200MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used for multiple frequency bands. The MAX19996 is available in a compact 5mm x 5mm, 20-pin thin QFN lead-free package with an exposed pad. Electrical performance is guaranteed over the extended -40C to +85C temperature range. Features o 2000MHz to 3000MHz RF Frequency Range o 1800MHz to 2550MHz LO Frequency Range o 50MHz to 500MHz IF Frequency Range o 8.7dB Typical Conversion Gain o 9.6dB Typical Noise Figure o +24.5dBm Typical Input IP3 o +11dBm Typical Input 1dB Compression Point o 69dBc Typical 2RF-2LO Spurious Rejection at PRF = -10dBm o Integrated LO Buffer o Integrated RF and LO Baluns for Single-Ended Inputs o Low -3dBm to +3dBm LO Drive o Pin Compatible with the MAX19996A 2300MHz to 3900MHz Mixer o Pin Similar with the MAX9993/MAX9994/ MAX9996 1700MHz to 2200MHz Mixers and MAX9984/MAX9986 400MHz to 1000MHz Mixers o Single +5.0V or +3.3V Supply o External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode Applications 2.3GHz WCS Base Stations 2.5GHz WiMAX and LTE Base Stations 2.7GHz MMDS Base Stations Fixed Broadband Wireless Access Wireless Local Loop Ordering Information PART MAX19996ETP+ TEMP RANGE PIN-PACKAGE -40C to +85C 20 Thin QFN-EP* MAX19996ETP+T -40C to +85C 20 Thin QFN-EP* +Denotes a lead-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel. Private Mobile Radios Military Systems WiMAX is a trademark of WiMAX Forum. Pin Configuration appears at end of data sheet. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. 1 MAX19996 General Description MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer ABSOLUTE MAXIMUM RATINGS VCC to GND ...........................................................-0.3V to +5.5V IF+, IF-, LOBIAS, LO, IFBIAS, LEXT to GND ..........................................-0.3V to (VCC + 0.3V) RF, LO Input Power ........................................................+12dBm RF, LO Current (RF and LO is DC shorted to GND through a balun) ......50mA Continuous Power Dissipation (Note 1) ..............................5.0W JA (Notes 2, 3)..............................................................+38C/W JC (Notes 1, 3)................................................................13C/W Operating Case Temperature Range (Note 4)........................................TC = -40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C Note 1: Based on junction temperature TJ = TC + (JC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: Junction temperature TJ = TA + (JA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. +5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, no input AC signals. TC = -40C to +85C, unless otherwise noted. Typical values are at VCC = +5.0V, TC = +25C, all parameters are production tested.) (Note 6) PARAMETER SYMBOL Supply Voltage VCC Supply Current ICC CONDITIONS MIN TYP MAX UNITS 4.75 5 5.25 V 230 245 mA +3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +3.0V to +3.6V, no input AC signals. TC = -40C to +85C, unless otherwise noted. Typical values are at VCC = +3.3V, TC = +25C, parameters are guaranteed by design and not production tested, unless otherwise noted.) PARAMETER SYMBOL Supply Voltage VCC Supply Current ICC CONDITIONS MIN TYP MAX UNITS 3.0 3.3 3.6 V Total supply current, VCC = +3.3V 149.5 mA RECOMMENDED AC OPERATING CONDITIONS MAX UNITS RF Frequency PARAMETER fRF (Note 7) 2000 3000 MHz LO Frequency fLO (Note 7) 1800 2550 MHz Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 7) 100 500 Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Note 7) 50 250 -3 +3 IF Frequency LO Drive Level 2 SYMBOL fIF PLO CONDITIONS MIN TYP MHz _______________________________________________________________________________________ dBm SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 2300MHz to 2800MHz, fLO = 2000MHz to 2500MHz, fIF = 300MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 2500MHz, fLO = 2200MHz, fIF = 300MHz, TC = +25C, all parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6) PARAMETER Conversion Power Gain SYMBOL GC CONDITIONS TC = +25C (Note 5) Conversion Power Gain Variation vs. Frequency GC fRF = 2300MHz to 2800MHz for any 100MHz band Conversion Power Gain Temperature Coefficient TCG TC = -40C to +85C Input 1dB Compression Point IP1dB Third-Order Input Intercept Point IIP3 Third-Order Input Intercept Point Variation Over Temperature Noise Figure NFSSB Noise Figure Temperature Coefficient Noise Figure Under Blocking Condition 2RF-2LO Spur Rejection 3RF-3LO Spur Rejection TC = +25C (Note 8) TYP MAX UNITS 8.1 8.7 9.3 dB 0.1 dB -0.012 dB/C 10 11 dBm 10.4 11 dBm 22 24.5 dBm fRF = 2300MHz to 2800MHz, fIF = 300MHz, fRF1 - fRF2 = 1MHz, PRF1 = PRF2 = -5dBm, TC = -40C to +85C 0.5 dB fRF = 2300MHz to 2700MHz, fIF = 300MHz, single sideband, no blockers present (Note 9) 9.6 fRF = 2500MHz, fIF = 300MHz, PLO = 0dBm, VCC = +5.0V, TC = +25C, single sideband, no blockers present (Note 9) 9.6 fRF = 2500MHz, TC = +25C (Note 8) fRF1 - fRF2 = 1MHz, PRF1 = PRF2 = -5dBm, TC = +25C (Note 5) TCNF fRF = 2000MHz to 3000MHz, single sideband, no blockers present, TC = -40C to +85C (Note 9) NFB +8dBm blocker tone applied to RF port, fRF = 2300MHz, fLO = 2110MHz, fBLOCKER = 2400MHz, PLO = -3dBm, VCC = +5.0V, TC = +25C (Note 9) 2x2 fRF = 2300MHz to 2700MHz, fLO = 2000MHz to 2400MHz, fSPUR = fLO + 150MHz 3x3 MIN fRF = 2300MHz to 2700MHz, fLO = 2000MHz to 2400MHz, fSPUR = fLO + 100MHz 12 dB 10.5 0.0183 20.8 PRF = -10dBm 60 69 PRF = -5dBm (Note 5) 55 64 PRF = -10dBm 70 78 PRF = -5dBm (Note 5) 60 68 dB/C 25 dB dBc dBc RF Input Return Loss LO on and IF terminated into a matched impedance 18 dB LO Input Return Loss RF and IF terminated into a matched impedance 20 dB _______________________________________________________________________________________ 3 MAX19996 +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 2300MHz to 2800MHz, fLO = 2000MHz to 2500MHz, fIF = 300MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 2500MHz, fLO = 2200MHz, fIF = 300MHz, TC = +25C, all parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6) PARAMETER IF Output Impedance SYMBOL ZIF CONDITIONS MIN Nominal differential impedance at the IC's IF outputs RF terminated into 50, LO driven by 50 source, IF transformed to 50 using external components shown in the Typical Application Circuit. See the IF Port Return Loss vs. IF Frequency graph in the Typical Operating Characteristics for performance vs. inductor values TYP MAX UNITS 200 fIF = 450MHz, L1 = L2 = 120nH 25 fIF = 350MHz, L1 = L2 = 270nH 25 fIF = 300MHz, L1 = L2 = 470nH 25 Minimum RF-to-IF Isolation fRF = 2300MHz to 2700MHz, PLO = +3dBm (Note 5) 34 Maximum LO Leakage at RF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -22.7 dBm Maximum 2LO Leakage at RF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -21 dBm Maximum LO Leakage at IF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm (Note 5) -27.5 dBm IF Output Return Loss dB dB +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, RF and LO ports are driven from 50 sources, Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 2500MHz, fLO = 2200MHz, fIF = 300MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER Conversion Power Gain SYMBOL CONDITIONS GC Conversion Power Gain Variation vs. Frequency GC fRF = 2300MHz to 2800MHz for any 100MHz band Gain Variation Over Temperature TCG TC = -40C to +85C Input 1dB Compression Point IP1dB Third-Order Input Intercept Point IIP3 Third-Order Input Intercept Variation Over Temperature Noise Figure MIN TYP MAX UNITS 8.6 dB 0.1 dB -0.012 dB/C (Note 8) 7.5 dBm fRF1 = 2500MHz, fRF2 = 2501MHz, fLO = 2200MHz, PRF1 = PRF2 = -5dBm 19.8 dBm fRF1 = 2500MHz, fRF2 = 2501MHz, fLO = 2200MHz, PRF1 = PRF2 = -5dBm, TC = +25C 0.5 dB NFSSB Single sideband, no blockers present (Note 9) 9.6 dB Noise Figure Temperature Coefficient TCNF Single sideband, no blockers present, TC = -40C to +85C (Note 9) 0.017 dB/C 2RF-2LO Spur Rejection 2x2 PRF = -10dBm 65.9 PRF = -5dBm 60.9 4 _______________________________________________________________________________________ dBc SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer (Typical Application Circuit, RF and LO ports are driven from 50 sources, Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 2500MHz, fLO = 2200MHz, fIF = 300MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER 3RF-3LO Spur Rejection SYMBOL 3x3 CONDITIONS PRF = -5dBm 57.9 LO on and IF terminated into a matched impedance LO Input Return Loss ZIF TYP 67.9 RF Input Return Loss IF Output Impedance MIN PRF = -10dBm MAX UNITS dBc 16 dB RF and IF terminated into a matched impedance 16.7 dB Nominal differential impedance at the IC's IF outputs 200 RF terminated into 50, LO driven by 50 source, IF transformed to 50 using external components shown in the Typical Application Circuit. See the IF Port Return Loss vs. IF Frequency graph in the Typical Operating Characteristics for performance vs. inductor values. fIF = 450MHz, L1 = L2 = 120nH 23 fIF = 350MHz, L1 = L2 = 270nH 23 fIF = 300MHz, L1 = L2 = 470nH 23 fRF = 2300MHz to 2700MHz, PLO = +3dBm 33 dB Maximum LO Leakage at RF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -26.6 dBm Maximum 2LO Leakage at RF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -28.8 dBm Maximum LO Leakage at IF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -21.9 dBm IF Output Return Loss Minimum RF-to-IF Isolation Note 5: Note 6: Note 7: Note 8: Note 9: dB 100% production tested for functional performance. All limits reflect losses of external components, including a 0.8dB loss at fIF = 300MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics. Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 source. Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers. _______________________________________________________________________________________ 5 MAX19996 +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) Typical Operating Characteristics (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) 9 8 TC = +85C 7 9 PLO = -3dBm, 0dBm, +3dBm 8 3000 2000 INPUT IP3 vs. RF FREQUENCY TC = +25C PRF = -5dBm/TONE 27 INPUT IP3 (dBm) 25 24 TC = -40C 23 26 PRF = -5dBm/TONE 27 PLO = -3dBm, 0dBm, +3dBm 25 24 3000 10 9 TC = +25C 8 VCC = 4.75V, 5.0V, 5.25V 25 24 2400 2600 2800 RF FREQUENCY (MHz) 2000 3000 2400 2600 2800 RF FREQUENCY (MHz) 12 MAX19996 toc08 11 2200 3000 NOISE FIGURE vs. RF FREQUENCY NOISE FIGURE vs. RF FREQUENCY NOISE FIGURE (dB) 11 2200 12 MAX19996 toc07 TC = +85C 26 22 2000 NOISE FIGURE vs. RF FREQUENCY 12 3000 23 11 NOISE FIGURE (dB) 2400 2600 2800 RF FREQUENCY (MHz) 2400 2600 2800 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY 22 2200 2200 28 23 22 2000 MAX19996 toc03 2000 3000 10 9 PLO = -3dBm, 0dBm, +3dBm MAX19996 toc09 TC = +85C 28 MAX19996 toc04 PRF = -5dBm/TONE 26 2400 2600 2800 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY 28 27 2200 INPUT IP3 (dBm) 2400 2600 2800 RF FREQUENCY (MHz) MAX19996 toc05 2200 VCC = 4.75V, 5.0V, 5.25V 8 6 6 2000 9 7 7 6 INPUT IP3 (dBm) 10 CONVERSION GAIN (dB) 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) TC = +25C 11 MAX19996 toc02 MAX19996 toc01 TC = -40C 10 CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY 11 MAX19996 toc06 CONVERSION GAIN vs. RF FREQUENCY 11 NOISE FIGURE (dB) MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer 10 9 VCC = 4.75V, 5.0V, 5.25V 8 8 TC = -40C 7 6 7 7 1800 2000 2200 2400 2600 RF FREQUENCY (MHz) 2800 3000 1800 2000 2200 2400 2600 RF FREQUENCY (MHz) 2800 3000 1800 2000 2200 2400 2600 RF FREQUENCY (MHz) _______________________________________________________________________________________ 2800 3000 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer 65 TC = +25C TC = -40C 45 65 PLO = -3dBm 55 3000 3RF-3LO RESPONSE vs. RF FREQUENCY TC = -40C 75 70 65 TC = +25C 2400 2600 2800 RF FREQUENCY (MHz) TC = +85C 80 2000 75 70 65 PLO = -3dBm, 0dBm, +3dBm 3000 2400 2600 2800 RF FREQUENCY (MHz) 14 13 INPUT P1dB (dBm) TC = +25C 9 8 2400 2600 2800 RF FREQUENCY (MHz) 2200 2400 2600 2800 RF FREQUENCY (MHz) MAX19996 toc12 3000 INPUT P1dB vs. RF FREQUENCY 12 11 10 PLO = -3dBm, 0dBm, +3dBm 14 13 3000 12 11 VCC = 5.0V 10 VCC = 4.75V 9 8 8 2200 2000 3000 9 2000 VCC = 4.75V, 5.0V, 5.25V VCC = 5.25V 11 TC = -40C 65 INPUT P1dB vs. RF FREQUENCY 12 10 2200 MAX19996 toc17 TC = +85C 70 55 2000 MAX19996 toc16 13 75 60 INPUT P1dB vs. RF FREQUENCY 14 3000 PRF = -5dBm 80 INPUT P1dB (dBm) 2400 2600 2800 RF FREQUENCY (MHz) 2400 2600 2800 RF FREQUENCY (MHz) 3RF-3LO RESPONSE vs. RF FREQUENCY 55 2200 2200 85 60 55 VCC = 4.75V, 5.0V, 5.25V 55 3000 PRF = -5dBm 60 2000 65 3RF-3LO RESPONSE vs. RF FREQUENCY 3RF-3LO RESPONSE (dBc) 80 2200 85 MAX19996 toc13 PRF = -5dBm 75 45 2000 3RF-3LO RESPONSE (dBc) 2400 2600 2800 RF FREQUENCY (MHz) MAX19996 toc14 2200 85 INPUT P1dB (dBm) PLO = 0dBm 45 2000 3RF-3LO RESPONSE (dBc) PLO = +3dBm PRF = -5dBm MAX19996 toc18 55 75 MAX19996 toc11 MAX19996 toc10 TC = +85C 85 2RF-2LO RESPONSE (dBc) 75 PRF = -5dBm 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) PRF = -5dBm 2RF-2LO RESPONSE vs. RF FREQUENCY 2RF-2LO RESPONSE vs. RF FREQUENCY 85 MAX19996 toc15 2RF-2LO RESPONSE vs. RF FREQUENCY 85 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) _______________________________________________________________________________________ 3000 7 MAX19996 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) LO LEAKAGE AT IF PORT vs. LO FREQUENCY -20 TC = +85C -30 -20 -30 -40 -40 2100 2300 2500 LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY 50 TC = +85C 40 30 TC = +25C TC = -40C 50 PLO = -3dBm, 0dBm, +3dBm 40 30 3000 70 2400 2600 2800 RF FREQUENCY (MHz) -25 -30 -35 40 30 VCC = 4.75V 2000 -15 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 LO LEAKAGE AT RF PORT vs. LO FREQUENCY -20 PLO = -3dBm, 0dBm, +3dBm -25 -30 -35 -10 -15 -20 VCC = 5.0V, 5.25V -25 -30 VCC = 4.75V -35 -40 -40 -40 VCC = 5.25V 50 3000 LO LEAKAGE AT RF PORT (dBm) TC = -40C, +25C, +85C 2700 10 2200 -10 LO LEAKAGE AT RF PORT (dBm) -15 VCC = 5.0V 60 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19996 toc25 -10 2100 2300 2500 LO FREQUENCY (MHz) 20 2000 LO LEAKAGE AT RF PORT vs. LO FREQUENCY 1900 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19996 toc26 2400 2600 2800 RF FREQUENCY (MHz) MAX19996 toc21 1700 10 2200 -30 2700 20 10 8 2100 2300 2500 LO FREQUENCY (MHz) 60 20 2000 -20 RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION (dB) RF-TO-IF ISOLATION (dB) 60 1900 70 MAX19996 toc22 70 VCC = 4.75V, 5.0V, 5.25V -40 1700 2700 RF-TO-IF ISOLATION (dB) 1900 MAX19996 toc23 1700 -20 MAX19996 toc20 PLO = -3dBm, 0dBm, +3dBm -10 MAX19996 toc24 TC = -40C TC = +25C -10 0 MAX19996 toc27 -10 0 LO LEAKAGE AT IF PORT (dBm) MAX19996 toc19 LO LEAKAGE AT IF PORT (dBm) 0 LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT (dBm) LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT (dBm) MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) _______________________________________________________________________________________ SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer RF PORT RETURN LOSS vs. RF FREQUENCY PLO = -3dBm, 0dBm, +3dBm 30 15 20 L1, L2 = 270nH 25 MAX9996 toc30 MAX19996 toc29 L1, L2 = 120nH 10 0 LO SELECTED RETURN LOSS (dB) 20 VCC = 4.75V, 5.0V, 5.25V fLO = 2400MHz 5 IF PORT RETURN LOSS (dB) 10 LO SELECTED RETURN LOSS vs. LO FREQUENCY 0 MAX19996 toc28 RF PORT RETURN LOSS (dB) 0 IF PORT RETURN LOSS vs. IF FREQUENCY 10 PLO = +3dBm PLO = 0dBm 20 30 PLO = -3dBm L1, L2 = 470nH 40 30 2400 2600 2800 RF FREQUENCY (MHz) 3000 40 50 500 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) VCC = 5.0V 230 220 VCC = 4.75V 210 RF-TO-IF ISOLATION vs. RF FREQUENCY 70 MAX19996 toc32 MAX19996 toc31 VCC = 5.25V 0 LO LEAKAGE AT IF PORT (dBm) SUPPLY CURRENT (mA) 240 230 320 410 IF FREQUENCY (MHz) LO LEAKAGE AT IF PORT vs. LO FREQUENCY SUPPLY CURRENT vs. TEMPERATURE (TC) 250 140 -10 L3 = 0 -20 L3 = 4.7nH -30 MAX19996 toc33 2200 60 RF-TO-IF ISOLATION (dB) 2000 50 L3 = 4.7nH 40 30 L3 = 0 20 -40 200 -40 -15 10 35 TEMPERATURE (C) 60 85 10 1700 1900 2100 2300 2500 LO FREQUENCY (MHz) 2700 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) _______________________________________________________________________________________ 3000 9 MAX19996 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) 9 8 7 9 8 10 PLO = -3dBm, 0dBm, +3dBm 2400 2600 2800 RF FREQUENCY (MHz) 3000 2000 PRF = -5dBm/TONE 21 2000 3000 19 18 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 INPUT IP3 vs. RF FREQUENCY VCC = 3.3V PLO = -3dBm, 0dBm, +3dBm 22 20 PRF = -5dBm/TONE 21 INPUT IP3 (dBm) INPUT IP3 (dBm) TC = +25C 20 2400 2600 2800 RF FREQUENCY (MHz) 22 MAX19996 toc37 VCC = 3.3V TC = +85C 21 VCC = 3.0V, 3.3V, 3.6V INPUT IP3 vs. RF FREQUENCY INPUT IP3 vs. RF FREQUENCY 22 PRF = -5dBm/TONE 2200 MAX19996 toc38 2200 8 6 6 2000 9 7 7 TC = +85C 6 INPUT IP3 (dBm) 11 MAX19996 toc36 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) TC = +25C VCC = 3.3V 19 18 MAX19996 toc39 TC = -40C 11 CONVERSION GAIN (dB) VCC = 3.3V MAX19996 toc34 11 10 CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY MAX19996 toc35 CONVERSION GAIN vs. RF FREQUENCY 20 19 VCC = 3.0V, 3.3V, 3.6V 18 TC = -40C 17 17 17 16 16 16 2000 3000 NOISE FIGURE vs. RF FREQUENCY 11 TC = +25C 9 8 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 NOISE FIGURE vs. RF FREQUENCY VCC = 3.3V NOISE FIGURE (dB) 10 2000 3000 12 MAX19996 toc40 VCC = 3.3V 11 2400 2600 2800 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 12 TC = +85C 2200 12 PLO = -3dBm, 0dBm, +3dBm 10 9 8 MAX19996 toc42 2400 2600 2800 RF FREQUENCY (MHz) 11 NOISE FIGURE (dB) 2200 MAX19996 toc41 2000 NOISE FIGURE (dB) MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer VCC = 3.0V, 3.3V, 3.6V 10 9 8 TC = -40C 7 7 1800 10 2000 2200 2400 2600 RF FREQUENCY (MHz) 2800 3000 7 1800 2000 2200 2400 2600 RF FREQUENCY (MHz) 2800 3000 1800 2000 2200 2400 2600 RF FREQUENCY (MHz) ______________________________________________________________________________________ 2800 3000 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer 2RF-2LO RESPONSE vs. RF FREQUENCY 55 PLO = +3dBm 65 55 55 TC = -40C PRF = -5dBm VCC = 3.3V 65 45 65 55 PLO = -3dBm, 0dBm, +3dBm 3000 2400 2600 2800 RF FREQUENCY (MHz) 7 9 7 PLO = -3dBm, 0dBm, +3dBm 6 TC = -40C 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 2400 2600 2800 RF FREQUENCY (MHz) 10 9 VCC = 3.6V 3000 8 7 VCC = 3.3V VCC = 3.0V 6 5 5 2200 INPUT P1dB vs. RF FREQUENCY 8 TC = +25C 2000 VCC = 3.0V, 3.3V, 3.6V 2000 3000 VCC = 3.3V INPUT P1dB (dBm) 8 6 2200 10 MAX19996 toc49 VCC = 3.3V TC = +85C 50 INPUT P1dB vs. RF FREQUENCY INPUT P1dB vs. RF FREQUENCY 10 9 55 40 2000 INPUT P1dB (dBm) 2400 2600 2800 RF FREQUENCY (MHz) 60 45 MAX19996 toc50 2200 3000 PRF = -5dBm 40 2000 2400 2600 2800 RF FREQUENCY (MHz) 3RF-3LO RESPONSE vs. RF FREQUENCY 60 50 2200 70 45 40 INPUT P1dB (dBm) 2000 3RF-3LO RESPONSE (dBc) 60 50 3000 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19996 toc46 TC = +85C 2400 2600 2800 RF FREQUENCY (MHz) 70 3RF-3LO RESPONSE (dBc) 3RF-3LO RESPONSE (dBc) PRF = -5dBm VCC = 3.3V 2200 MAX19996 toc48 3RF-3LO RESPONSE vs. RF FREQUENCY TC = +25C 55 45 2000 3000 MAX19996 toc47 2400 2600 2800 RF FREQUENCY (MHz) 70 65 65 PLO = 0dBm 45 2200 VCC = 3.0V, 3.3V, 3.6V PLO = -3dBm TC = -40C 45 2000 75 MAX19996 toc51 TC = +25C 75 PRF = -5dBm 2RF-2LO RESPONSE (dBc) 65 2RF-2LO RESPONSE vs. RF FREQUENCY 85 MAX19996 toc45 MAX19996 toc43 TC = +85C PRF = -5dBm VCC = 3.3V 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) PRF = -5dBm VCC = 3.3V 75 85 MAX19996 toc44 2RF-2LO RESPONSE vs. RF FREQUENCY 85 5 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) ______________________________________________________________________________________ 3000 11 MAX19996 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY TC = -40C TC = +25C -20 -30 VCC = 3.3V -10 PLO = -3dBm, 0dBm, +3dBm -20 -30 0 MAX19996 toc54 0 LO LEAKAGE AT IF PORT (dBm) -10 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX19996 toc53 LO LEAKAGE AT IF PORT (dBm) VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) MAX19996 toc52 0 -10 VCC = 3.0V, 3.3V, 3.6V -20 -30 TC = +85C -40 -40 1700 2700 RF-TO-IF ISOLATION vs. RF FREQUENCY TC = +85C TC = +25C 40 VCC = 3.3V TC = -40C 20 50 40 30 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 TC = -40C, +25C, +85C 2200 2400 2600 2800 RF FREQUENCY (MHz) 40 30 2000 -30 -35 VCC = 3.3V -40 -25 -30 -35 -40 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 LO LEAKAGE AT RF PORT vs. LO FREQUENCY PLO = -3dBm, 0dBm, +3dBm 12 VCC = 3.0V, 3.3V, 3.6V 3000 -20 LO LEAKAGE AT RF PORT (dBm) VCC = 3.3V 2700 50 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19996 toc58 -20 2100 2300 2500 LO FREQUENCY (MHz) 20 2000 LO LEAKAGE AT RF PORT vs. LO FREQUENCY -25 PLO = -3dBm, 0dBm, +3dBm 20 2000 1900 60 -20 VCC = 3.6V LO LEAKAGE AT RF PORT (dBm) 30 1700 RF-TO-IF ISOLATION vs. RF FREQUENCY MAX19996 toc59 50 2700 RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION (dB) RF-TO-IF ISOLATION (dB) VCC = 3.3V 2100 2300 2500 LO FREQUENCY (MHz) 60 MAX19996 toc55 60 1900 MAX19996 toc57 2100 2300 2500 LO FREQUENCY (MHz) RF-TO-IF ISOLATION (dB) 1900 MAX19996 toc56 1700 VCC = 3.3V -25 MAX19996 toc60 -40 LO LEAKAGE AT RF PORT (dBm) MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer -30 -35 VCC = 3.0V -40 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) ______________________________________________________________________________________ SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer 5 20 PLO = -3dBm, 0dBm, +3dBm 0 L1, L2 = 120nH VCC = 3.3V PLO = +3dBm LO RETURN LOSS (dB) 15 VCC = 3.0V, 3.3V, 3.6V fLO = 2400MHz MAX19996 toc62 RF PORT RETURN LOSS (dB) 10 25 0 IF PORT RETURN LOSS (dB) VCC = 3.3V MAX19996 toc61 0 5 LO RETURN LOSS vs. LO FREQUENCY IF PORT RETURN LOSS vs. IF FREQUENCY 10 15 20 10 PLO = 0dBm 20 30 PLO = -3dBm L1, L2 = 270nH 25 MAX19996 toc63 RF PORT RETURN LOSS vs. RF FREQUENCY L1, L2 = 470nH 40 30 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 50 140 SUPPLY CURRENT vs. TEMPERATURE (TC) VCC = 3.3V 11 VCC = 3.3V 10 CONVERSION GAIN (dB) SUPPLY CURRENT (mA) 155 150 145 140 INPUT IP3 vs. RF FREQUENCY 9 8 135 -15 10 35 TEMPERATURE (C) 60 85 VCC = 3.3V 20 19 18 17 16 6 -40 PRF = -5dBm/TONE 21 L3 = 4.7nH L3 = 0, 4.7nH 7 VCC = 3.0V 22 INPUT IP3 (dBm) VCC = 3.6V 1600 1800 2000 2200 2400 2600 2800 3000 LO FREQUENCY (MHz) 500 CONVERSION GAIN vs. RF FREQUENCY MAX19996 toc64 160 230 320 410 IF FREQUENCY (MHz) MAX19996 toc65 2000 MAX19996 toc66 30 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) 3000 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) ______________________________________________________________________________________ 3000 13 MAX19996 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 300MHz IF, TC = +25C, unless otherwise noted.) 60 L3 = 4.7nH PRF = -5dBm VCC = 3.3V 70 L3 = 0 65 60 55 L3 = 4.7nH 50 50 45 45 2000 2200 2400 2600 2800 RF FREQUENCY (MHz) 2000 3000 LO LEAKAGE AT IF PORT vs. LO FREQUENCY 2400 2600 2800 RF FREQUENCY (MHz) 3000 RF-TO-IF ISOLATION vs. RF FREQUENCY VCC = 3.3V 60 MAX19996 toc69 0 VCC = 3.3V 50 RF-TO-IF ISOLATION (dB) L3 = 0 -10 2200 -20 -30 MAX19996 toc70 2RF-2LO RESPONSE (dBc) 65 55 75 3RF-3LO RESPONSE (dBc) L3 = 0 70 PRF = -5dBm VCC = 3.3V MAX19996 toc67 75 MAX19996 toc68 3RF-3LO RESPONSE vs. RF FREQUENCY 2RF-2LO RESPONSE vs. RF FREQUENCY LO LEAKAGE AT IF PORT (dBm) MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer L3 = 4.7nH 40 30 20 L3 = 0 L3 = 4.7nH -40 10 1700 14 1900 2100 2300 2500 LO FREQUENCY (MHz) 2700 2000 2200 2400 2600 2800 RF FREQENCY (MHz) ______________________________________________________________________________________ 3000 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer PIN NAME 1, 6, 8, 14 VCC FUNCTION 2 RF 3, 4, 5, 10, 12, 13, 17 GND 7 LOBIAS 9, 15 N.C. 11 LO 16 LEXT 18, 19 IF-, IF+ Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). 20 IFBIAS IF Amplifier Bias Control. IF bias resistor connection for the IF amplifier. Connect a 698 1% resistor (230mA bias condition) from IFBIAS to GND. -- EP Exposed Pad. Internally connected to GND. Connect to a large ground plane using multiple vias to maximize thermal and RF performance. Power Supply. Bypass to GND with 0.01F capacitors as close as possible to the pin. Single-Ended 50 RF Input. Internally matched and DC shorted to GND through a balun. Requires an input DC-blocking capacitor. Ground. Internally connected to the exposed pad. Connect all ground pins and the exposed pad (EP) together. LO Amplifier Bias Control. Output bias resistor for the LO buffer. Connect a 604 1% resistor (230mA bias condition) from LOBIAS to ground. Not internally connected. Pins can be grounded. Local Oscillator Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. External Inductor Connection. Connect an inductor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (see the Typical Operating Characteristics for typical performance vs. inductor value). ______________________________________________________________________________________ 15 MAX19996 Pin Description MAX19996 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer Detailed Description The MAX19996 high-linearity downconversion mixer provides 8.7dB of conversion gain and +24.5dBm of IIP3, with a typical 9.6dB noise figure. The integrated baluns and matching circuitry allow for 50 singleended interfaces to the RF and the LO port. The integrated LO buffer provides a high drive level to the mixer core, reducing the LO drive required at the MAX19996's input to a -3dBm to +3dBm range. The IF port incorporates a differential output, which is ideal for providing enhanced 2RF-2LO performance. Specifications are guaranteed over broad frequency ranges to allow for use in WCS, LTE, WiMAX, and MMDS base stations. The MAX19996 is specified to operate over an RF input range of 2000MHz to 3000MHz, an LO range of 1800MHz to 2550MHz, and an IF range of 50MHz to 500MHz. The external IF components set the lower frequency range (see the Typical Operating Characteristics for details). Operation beyond these ranges is possible (see the Typical Operating Characteristics for additional information). Although this device is optimized for low-side LO injection applications, it can operate in high-side LO injection modes as well. However, performance degrades as fLO continues to increase. For increased high-side LO performance, refer to the MAX19996A data sheet. RF Port and Balun The MAX19996 RF input provides a 50 match when combined with a series 8.2pF DC-blocking capacitor. This DC-blocking capacitor is required as the input is internally DC shorted to ground through the on-chip balun. The RF port input return loss is typically 15dB over the RF frequency range of 2300MHz to 2800MHz. LO Inputs, Buffer, and Balun The MAX19996 is optimized for low-side LO injection applications with an 1800MHz to 2550MHz LO frequency range. The LO input is internally matched to 50, requiring only a 2pF DC-blocking capacitor. A twostage internal LO buffer allows for a -3dBm to +3dBm LO input power range. The on-chip low-loss balun, along with an LO buffer, drives the double-balanced mixer. All interfacing and matching components from the LO inputs to the IF outputs are integrated on-chip. High-Linearity Mixer The core of the MAX19996 is a double-balanced, highperformance passive mixer. Exceptional linearity is provided by the large LO swing from the on-chip LO buffer. When combined with the integrated IF amplifiers, the performance of IIP3, 2RF-2LO rejection, and noise-figure is typically +24.5dBm, 69dBc, and 9.6dB, respectively. 16 Differential IF Output Amplifier The MAX19996 has an IF frequency range of 50MHz to 500MHz, where the low-end frequency depends on the frequency response of the external IF components. The MAX19996 mixer is tuned for a 450MHz IF using 120nH external pullup bias inductors. Lower IFs of 350MHz and 300MHz require higher inductor values of 270nH and 470nH, respectively. The differential, open-collector IF output ports require these inductors to be connected to VCC. Note that these differential ports are ideal for providing enhanced 2RF-2LO performance. Single-ended IF applications require a 4:1 (impedance ratio) balun to transform the 200 differential IF impedance to a 50 single-ended system. Use the TC4-1W-17 4:1 transformer for IF frequencies above 200MHz and the TC4-1W-7A 4:1 transformer for frequencies below 200MHz. The user can use a differential IF amplifier or SAW filter on the mixer IF port, but a DC block is required on both IF+/IF- ports to keep external DC from entering the IF ports of the mixer. Applications Information Input and Output Matching The RF and LO ports are designed to operate in a 50 system. Use DC blocks at the RF and LO inputs to isolate the ports from external DC while providing some reactive tuning. The IF output impedance is 200 (differential). For evaluation, an external low-loss 4:1 (impedance-ratio) balun transforms this impedance down to a 50 single-ended output (see the Typical Application Circuit). Externally Adjustable Bias Bias currents for the LO buffer and the IF amplifier are optimized by fine-tuning resistors R1 and R2. The values for R1 and R2, as listed in Table 1, represent the nominal values which yield the highest level of linearity performance. Larger value resistors can be used to reduce power dissipation at the expense of some performance loss. Contact the factory for details concerning recommended power reduction vs. performance tradeoffs. If 1% resistors are not readily available, 5% resistors can be substituted. Significant reductions in power consumption can also be realized by operating the mixer with an optional supply voltage of +3.3V. Doing so reduces the overall power consumption by up to 57%. See the +3.3V Supply AC Electrical Characteristics table and the relevant +3.3V curves in the Typical Operating Characteristics section to evaluate the power vs. performance tradeoffs. ______________________________________________________________________________________ SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer MAX19996 Table 1. Component Values DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER C1 1 8.2pF microwave capacitor (0402) Murata Electronics North America, Inc. C2, C6, C8, C11 4 0.01F microwave capacitors (0402) Murata Electronics North America, Inc. C3, C9 0 Not installed, capacitors -- C10 1 2pF microwave capacitor (0402) Murata Electronics North America, Inc. C13, C14 2 1000pF microwave capacitors (0402) Murata Electronics North America, Inc. C15 1 82pF microwave capacitor (0402) Murata Electronics North America, Inc. L1, L2 2 120nH wire-wound high-Q inductors* (0805) (see the Typical Operating Characteristics) Coilcraft, Inc. L3 1 4.7nH wire-wound high-Q inductor (0603) Coilcraft, Inc. R1 1 R2 1 698 1% resistor (0402). Use for VCC = +5.0V applications. 1.1k 1% resistor (0402). Use for VCC = +3.3V applications. 604 1% resistor (0402). Use for VCC = +5.0V applications. 845 1% resistor (0402). Use for VCC = +3.3V applications. Digi-Key Corp. Digi-Key Corp. R3 1 0 resistor (1206) Digi-Key Corp. T1 1 4:1 IF balun TC4-1W-17* Mini-Circuits U1 1 MAX19996 IC (20 TQFN) Maxim Integrated Products, Inc. *Use 470nH inductors and TC4-1W-7A 4:1 balun for IF frequencies below 200MHz. LEXT Inductor Short LEXT to ground using a 0 resistor. For applications requiring improved RF-to-IF and LO-to-IF isolation, a 4.7nH low-ESR inductor can be connected from LEXT to GND. However, the load impedance presented to the mixer must be such that any capacitances from IF- and IF+ to ground do not exceed several picofarads to ensure stable operating conditions. Since approximately 120mA flows through LEXT, it is important to use a low-DCR wire-wound inductor. to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19996 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Power-Supply Bypassing Layout Considerations Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin with the capacitors shown in the Typical Application Circuit and see Table 1. A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. The load impedance presented to the mixer must be such that any capacitance from both IF- and IF+ to ground does not exceed several picofarads. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad The exposed pad (EP) of the MAX19996's 20-pin thin QFN package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19996 is mounted be designed to conduct heat from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes. Exposed Pad RF/Thermal Considerations ______________________________________________________________________________________ 17 SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer MAX19996 Typical Application Circuit C13 C15 L1 3 6 IF OUTPUT T1 2 L2 R3 1 4 C14 4:1 R1 20 C3 C2 VCC C1 RF INPUT RF 19 LEXT GND IF- +5.0V IF+ IFBIAS L3 18 17 16 15 1 MAX19996 2 14 N.C. VCC +5.0V C11 GND GND 3 13 4 12 GND GND EP C10 11 5 +5.0V C6 9 LO INPUT 10 R2 NOTE: PINS 3, 4, 5, 10, 12, 13, AND 17 ARE ALL INTERNALLY CONNECTED TO THE EXPOSED GROUND PAD. CONNECT THESE PINS TO GROUND TO IMPROVE ISOLATION. C8 +5.0V C9 18 LO GND 8 N.C. 7 LOBIAS VCC 6 VCC GND PINS 9 AND 15 HAVE NO INTERNAL CONNECTION BUT CAN BE EXTERNALLY GROUNDED TO IMPROVE ISOLATION. ______________________________________________________________________________________ SiGe High-Linearity, 2000MHz to 3000MHz Downconversion Mixer with LO Buffer Chip Information VCC 1 RF 2 GND 3 GND 4 IFBIAS IF+ IF- GND LEXT PROCESS: SiGe BiCMOS TOP VIEW 20 19 18 17 16 MAX19996 Package Information 15 N.C. 14 VCC 13 GND 12 GND 11 LO For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 20 Thin QFN-EP T2055+3 21-0140 EP 6 7 8 9 10 LOBIAS VCC N.C. GND 5 VCC GND Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19 (c) 2008 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc. MAX19996 Pin Configuration