4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.9 GHz). The power amplifier IC features easy board-level usage along with highspeed power-up/down control and is offered in a 16-contact WQFN package Features * High gain * High temperature stability * High linear output power: * Low shut-down current (~2 A) - Meets 802.11a OFDM Spectrum Mask requirements up to 24 dBm over the entire band - Added EVM <3% up to 20 dBm for 54 Mbps 802.11a signal - Meets 802.11n HT40 Spectrum Mask requirements typically up to 20 dBm * High power-added efficiency/Low operating current for 6 Mbps 802.11a applications - ~17% @ POUT = 23 dBm for 6 Mbps * Built-in Ultra-low IREF power-up/down control - IREF <3 mA * Low idle current * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 16-contact WQFN (3mm x 3mm) - Non-Pb (lead-free) packages available Applications * WLAN (IEEE 802.11a/n) - ~150 mA ICQ * Japan WLAN * High speed power up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns (c)2012 Silicon Storage Technology, Inc. * On-chip power detection * HyperLAN2 * Multimedia www.microchip.com DS75047A 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Product Description SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.9 GHz). The SST11LP12 has excellent linearity, typically <3% added EVM at 20 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 24 dBm. SST11LP12 also has widerange (>20 dB), temperature-stable (~1 dB over 85C), single-ended/differential power detectors which lower users' cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF <3 mA) makes the SST11LP12 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11LP12 is offered in 16-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2012 Silicon Storage Technology, Inc. DS75047A 2 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet VCC1 VCC2 VCC3 NC Functional Blocks 16 15 14 13 NC 1 12 NC RFIN 2 11 RFOUT RFIN 3 10 RFOUT VCCb 4 Bias Circuit 5 6 7 8 NC VREF VREF Det_ref 9 Det 1278 B1.1 Figure 1: Functional Block Diagram (c)2012 Silicon Storage Technology, Inc. DS75047A 3 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet NC VCC1 VCC2 VCC3 NC Pin Assignments 16 15 14 13 12 NC 1 Top View VCCb 11 RFOUT 10 RFOUT RF and DC GND 0 4 5 6 7 8 Det_ref 3 VREF RFIN (contacts facing down) VREF 2 NC RFIN 9 Det 1278 16-wqfn P1.0 Figure 2: Pin Assignments for 16-contact WQFN Pin Descriptions Table 1: Pin Description Symbol Pin No. Pin Name Type1 Function GND 0 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. NC 1 No Connection Unconnected pin RFIN 2 I RF input, DC decoupled RFIN 3 I RF input, DC decoupled VCCb 4 Power Supply NC 5 No Connection VREF 6 PWR Current Control VREF 7 PWR Current Control Det_ref 8 O On-chip power detector reference Det 9 O On-chip power detector RFOUT 10 O RF output RFOUT 11 O RF output NC 12 No Connection Unconnected pin NC 13 No Connection Unconnected pin VCC3 14 Power Supply PWR Power supply, 3rd stage VCC2 15 Power Supply PWR Power supply, 2nd stage VCC1 16 Power Supply PWR Power supply, 1st stage PWR Supply voltage for bias circuit Unconnected pin T1.1 75047 1. I=Input, O=Output (c)2012 Silicon Storage Technology, Inc. DS75047A 4 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 3 through 8 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 14, 15, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Table 2: Operating Range Range Ambient Temp VCC Industrial -40C to +85C 2.7V to 4.2V T2.1 75047 Table 3: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 4, 14, 15, 16 ICC Supply Current @ POUT = 23 dBm at VCC = 3.3V Min. Typ 2.7 3.3 Max. Unit 4.2 V 400 mA ICQ VCC quiescent current 150 mA IOFF Shut down current <1. 0 A VREG Reference Voltage for recommended application 2.95 3.1 Test Conditions V T3.0 75047 (c)2012 Silicon Storage Technology, Inc. DS75047A 5 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Table 4: AC Electrical Characteristics for Configuration1,2 Symbol Parameter Min FL-U Frequency range 4.9 Linearity Typ Max Unit 5.9 GHz Output power with <3% EVM at 54 Mbps OFDM signal when operating at 3.3V VCC 20 dBm Output power level with 802.11a mask compliance across 4.9-5.8 GHz 23 dBm Output power level with 802.11n, HT40 mask compliance across 4.9-5.8 GHz 20 dBm Gain over band (4.9-5.1 MHz) 33 dB G Gain over band (5.3-5.5 MHz) 31 dB Det Power detector output voltage range 0.5 Det_ref Power detector output reference 0.5 2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors Gain over band (5.7-5.8 MHz) 27 dB 2.0 V 0.6 V -50 dBc T4.1 75047 1. Performance is only valid using the recommended schematic. VCC = 3.3V, VREG = 2.95, Temperature = 25C 2. EVM is measured with Equalizer Channel Estimation set to "sequence only." (c)2012 Silicon Storage Technology, Inc. DS75047A 6 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25C, VREG1,2 = 2.95V unless otherwise noted S12 versus Frequency 0 0 -5 -10 -10 -20 -15 -30 S12 (dB) S11 (dB) S11 versus Frequency -20 -25 -40 -50 -30 -60 -35 -70 -40 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) Frequency (GHz) S22 versus Frequency 40 0 30 -5 20 -10 10 -15 S22 (dB) S21 (dB) S21 versus Frequency 0 -10 -20 -25 -20 -30 -30 -35 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 1278 S-Parms.0.1 Figure 3: S-Parameters (c)2012 Silicon Storage Technology, Inc. DS75047A 7 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25C, VREG = 2.95V unless otherwise specified EVM for 54 Mbps operation EVM versus Output Power 10 EVM ( ) 9 8 4.920 GHz 7 5.180 GHz 6 5.500 GHz 5.850 GHz 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Output Power (dBm) 20 21 22 23 24 1278 F4.2 Figure 4: EVM versus Output Power, measured with Equalizer Channel Estimation set to "sequence only" Supply Current (mA) Supply Current versus Output Power 400 390 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 4.920 GHz 5.180 GHz 5.500 GHz 5.850 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1278 F5.3 Figure 5: Power Supply Current versus Output Power (c)2012 Silicon Storage Technology, Inc. DS75047A 8 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Detector Voltage versus Output Power Detector Voltage (V) 1.80 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 4.920 GHz 5.500 GHz 5.500 GHz 5.850 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1278 F6.3 Figure 6: Detector Voltage versus Output Power Power Gain (dB) Power Gain versus Output Power 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 4.920 GHz 5.180 GHz 5.500 GHz 5.850 GHz 10 11 12 13 14 15 16 17 18 Output Power (dBm) 19 20 21 22 23 24 1278 F7.3 Figure 7: Power Gain versus Output Power (c)2012 Silicon Storage Technology, Inc. DS75047A 9 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet PAE versus Output Power 12 11 PAE ( ) 10 9 4.920 GHz 8 5.180 GHz 7 5.500 GHz 6 5.500 GHz 5 4 3 2 1 0 8 9 10 11 12 13 14 15 16 17 18 19 Output Power (dBm) 20 21 22 1278 F9.1 Figure 8: PAE versus Output Power Table 5: 802.11a 6Mbps OFDM Mask Compliance Power Frequency (GHz) 802.11a 6Mbps OFDM Mask Compliance Power (dBm) 4.920 24 5.180 23.8 5.500 23.5 5.805 23 T5.0 75047 (c)2012 Silicon Storage Technology, Inc. DS75047A 10 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet VCC 25 10 F 3.3 pF 0-0.5mm (0-20 mil) 0.1 F 0.1 F 1.8 pF 16 50 15 14 13 1 12 2 11 2.03mm x 1.52 mm (80 mil x 60 mil) 50 RFOUT RFin 10 3 0.3 pF* 0.5 pF ** Bias Circuit 9 4 0.1 F 5 Test Conditions 6 7 10 pF 8 VREG = 2.95V VCC=3.3V 0 * Distance from the edge of the package to the edge of the 0.3 pF capacitor = 0.89 mm (35 mil) 10 pF 100 pF Det_ref **Capacitor is centered on the edge of the output patch Det 1278 Schematic.0.7 VREF Figure 9: Recommended Schematic for High-Power 802.11a Application (c)2012 Silicon Storage Technology, Inc. DS75047A 11 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Product Ordering Information SST 11 LP XX XX 12 XX - QCF XXX Environmental Attribute F1 = non-Pb / non-Sn contact (lead) finish: Nickel plating with Gold top (outer) layer Package Modifier C = 16 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 1 = 4.9-5.8 GHz Product Line 1 = RF Products 1. Environmental suffix "F" denotes non-Pb/ non-Sn solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant". Valid combinations for SST11LP12 SST11LP12-QCF SST11LP12 Evaluation Kits SST11LP12-QCF-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2012 Silicon Storage Technology, Inc. DS75047A 12 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 0.2 Pin 1 Pin 1 1.7 3.00 0.075 1.7 0.5 BSC 0.075 0.45 0.35 0.05 Max 3.00 0.075 0.80 0.70 0.30 0.18 1mm 16-wqfn-3x3-QC-0.3 Note: 1. Complies with JEDEC JEP95 MO-220J, variant WEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). Figure 10:16-contact Very-thin Quad Flat No-lead (WQFN) SST Package Code: QC (c)2012 Silicon Storage Technology, Inc. DS75047A 13 01/12 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet Table 6:Revision History Revision 00 01 Description * * * 02 * * * * * 03 * 04 * * A * * * * * Date S71278: SST conversion of data sheet GP1112 Corrected the spectrum mask value in "Product Description" on page 2 to read 802.11a Corrected the solder reflow temperature under "Absolute Maximum Stress Ratings" on page 5 Updated sales and marketing contact information Changed VQFN to WQFN Updated Product Ordering information Updated Table 4 on page 6. Updated document status from Preliminary Specifications to Data Sheet Revised gain values in "Features" and "Product Description" on page 2 and in Table 4 on page 6 Updated Contact Information Updated Features, Table 3, Table 4, Table 5, and Figures 4-9 to indicate improved RF performance. Updated data plots to reflect EVM measurements with Equalizer Channel Estimation set to "sequence only" Updated Table 2 on page 5 and Table 4 on page 6 Applied new document format Released document under letter revision system Updated Spec number from S71278 to DS75047 Jan 2005 Jan 2006 Mar 2008 Feb 2009 Dec 2010 Jan 2012 ISBN:978-1-61341-948-9 (c) 2012 Silicon Storage Technology, Inc-a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com (c)2012 Silicon Storage Technology, Inc. DS75047A 14 01/12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microchip: LAN7500I-ABZJ-TR LAN7500-ABZJ-TR