LT5519
1
5519f
■
Wide RF Frequency Range: 0.7GHz to 1.4GHz
■
17.1dBm Typical Input IP3 at 1GHz
■
On-Chip RF Output Transformer
■
On-Chip 50Ω Matched LO and RF Ports
■
Single-Ended LO and RF Operation
■
Integrated LO Buffer: –5dBm Drive Level
■
Low LO to RF Leakage: – 44dBm Typical
■
Noise Figure: 13.6dB
■
Wide IF Frequency Range: 1MHz to 400MHz
■
Enable Function with Low Off-State Leakage Current
■
Single 5V Supply
■
Small 16-Lead QFN Plastic Package
0.7GHz to 1.4GHz
High Linearity
Upconverting Mixer
The LT
®
5519 mixer is designed to meet the high linearity
requirements of wireless and cable infrastructure trans-
mission systems. A high speed, internally 50Ω matched,
LO amplifier drives a double-balanced mixer core, allow-
ing the use of a low power, single-ended LO source. An RF
output transformer is integrated, thus eliminating the
need for external matching components at the RF output,
while reducing system cost, component count, board area
and system-level variations. The IF port can be easily
matched to a broad range of frequencies for use in many
different applications.
The LT5519 mixer delivers +17.1dBm typical input 3rd
order intercept point at 1GHz with IF input signal levels of
–10dBm. The input 1dB compression point is typically
+5.5dBm. The IC requires only a single 5V supply.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter
RF Output Power, IM3 and IM2
vs IF Input Power (Two Input Tones)
IF
+
IF
–
LO
–
LO
+
RF
+
RF
–
PA
LO INPUT
–5dBm
BIAS
EN V
CC1
V
CC2
V
CC3
10pF
5pF5pF 85Ω
5V
DC
5519 F01a
BPF
BPF
GND
4:1 220pF
220pF
33pF
100Ω
100Ω
(OPTIONAL)
LT5519
1µF 1000pF
39nH
■
Wireless Infrastructure
■
Cable Downlink Infrastructure
■
Point-to-Point and Point-to-Multipoint Data
Communications
■
High Linearity Frequency Conversion
FEATURES
DESCRIPTIO
U
APPLICATIO S
U
TYPICAL APPLICATIO
U
IF INPUT POWER (dBm/TONE)
–16
POUT, IM3, IM2 (dBm/TONE)
–30
–10
10
0
5519 F01b
–50
–70
–40
–20
0
–60
–80
–90 –12 –8 –4 4
POUT
IM3
IM2
fRF = 1000MHz
PLO = –5dBm
fLO = 1140MHz
fIF1 = 140MHz
fIF2 = 141MHz
TA = 25°C
LT5519
2
5519f
Supply Voltage ....................................................... 5.5V
Enable Voltage ............................. –0.3V to (V
CC
+ 0.3V)
LO Input Power (Differential)............................ +10dBm
LO
+
to LO
–
Differential DC Voltage .......................... ±1V
LO
+
and LO
–
DC Common Mode Voltage...... –1V to V
CC
IF Input Power (Differential) ............................. +10dBm
IF
+
and IF
–
DC Currents ........................................ 25mA
RF
+
to RF
–
Differential DC Voltage...................... ±0.13V
RF
+
and RF
–
DC Common Mode Voltage...... –1V to V
CC
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range ................. –65°C to 125°C
Junction Temperature (T
J
)....................................125°C
ORDER PART
NUMBER
UF PART
MARKING
T
JMAX
= 125°C, θ
JA
= 37°C/W
EXPOSED PAD (PIN 17) IS GND
MUST BE SOLDERED TO PCB
5519
LT5519EUF
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
(Note 1)
ELECTRICAL CHARACTERISTICS
Consult LTC Marketing for parts specified with wider operating temperature ranges.
16 15 14 13
5 6 7 8
TOP VIEW
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
9
10
11
12
4
3
2
1
EN
V
CC1
V
CC2
V
CC3
GND
IF
+
IF
–
GND
GND
RF
+
RF
–
GND
GND
LO
–
LO
+
GND
17
PARAMETER CONDITIONS MIN TYP MAX UNITS
IF Input Frequency Range 1 to 400 MHz
LO Input Frequency Range 300 to 1800 MHz
RF Output Frequency Range 700 to 1400 MHz
1GHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured
at 1GHz, unless otherwise noted. (Test circuit shown in Figure 2) (Notes 2, 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
IF Input Return Loss Z
O
= 50Ω, with External Matching 20 dB
LO Input Return Loss Z
O
= 50Ω17 dB
RF Output Return Loss Z
O
= 50Ω20 dB
LO Input Power –10 to 0 dBm
Conversion Gain –0.6 dB
Input 3rd Order Intercept –10dBm/Tone, ∆f = 1MHz 17.1 dBm
Input 2nd Order Intercept –10dBm, Single Tone 48 dBm
LO to RF Leakage –44 dBm
LO to IF Leakage –40 dBm
Input 1dB Compression 5.5 dBm
IF Common Mode Voltage Internally Biased 1.77 V
DC
Noise Figure Single-Side Band 13.6 dB
LT5519
3
5519f
(Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High, TA = 25°C, unless otherwise noted. (Note 3)
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: External components on the final test circuit are optimized for
operation at f
RF
= 1GHz, f
LO
= 1.14GHz and f
IF
= 140MHz.
Note 3: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 4: Turn-On and Turn-Off times are based on the rise and fall times of
the RF output envelope from –40dBm to full power with an IF input power
of –10dBm.
DC ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
Enable (EN) Low = OFF, High = ON
Turn-On Time (Note 4) 2µs
Turn-Off Time (Note 4) 6µs
Input Current V
ENABLE
= 5V
DC
110 µA
Enable = High (ON) 3V
DC
Enable = Low (OFF) 0.5 V
DC
Power Supply Requirements (V
CC
)
Supply Voltage 4.5 to 5.25 V
DC
Supply Current V
CC
= 5V
DC
60 70 mA
Shutdown Current EN = Low 1 100 µA
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Supply Current vs Supply Voltage Shutdown Current
vs Supply Voltage
(Test Circuit Shown in Figure 2)
SUPPLY VOLTAGE (V)
4
SUPPLY CURRENT (mA)
56
58
60
4.75 5.25
5519 G01
54
52
50 4.25 4.5 5
62
64
66
5.5
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
SUPPLY VOLTAGE (V)
4
0
SHUTDOWN CURRENT (µA)
0.2
0.4
0.6
0.8
1.2
4.25 4.5 4.75 5
5519 G02
5.25 5.5
1.0
TA = 85°C
TA = 25°C
TA = –40°C
LT5519
4
5519f
Conversion Gain and SSB Noise
Figure vs LO Input Power IIP3 and IIP2 vs
LO Input Power LO-RF Leakage
vs LO Input Power
IIP3 and IIP2 vs
LO Input Power RF Output Power and Output IM3 vs
IF Input Power (Two Input Tones)
TYPICAL PERFOR A CE CHARACTERISTICS
UW
RF Output Power and Output IM2 vs
IF Input Power (Two Input Tones)
Conversion Gain and SSB Noise
Figure vs RF Output Frequency IIP3 and IIP2
vs RF Output Frequency LO-RF Leakage
vs RF Output Frequency
VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz,
unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.)
RF OUTPUT FREQUENCY (MHz)
500
GAIN, NF (dB)
6
10
14
18
1300
5519 G03
2
–2
4
8
12
16
0
–4
–6 700 900 1100 1500
HIGH SIDE LO
LOW SIDE LO
LOW SIDE AND HIGH SIDE LO
NF
GAIN
RF OUTPUT FREQUENCY (MHz)
500
13
IIP3 (dBm)
IIP2 (dBm)
15
17
19
IIP3
IIP2
21
23
25
0
10
20
30
40
50
60
700 900 1100 1300
5519 G04
1500
LOW SIDE LO
LOW SIDE LO
HIGH SIDE LO
HIGH SIDE LO
RF OUTPUT FREQUENCY (MHz)
500
LO LEAKAGE (dBm)
–30
–20
–10
1300
5519 G05
–40
–50
–60 700 900 1100 1500
LOW SIDE LO
HIGH SIDE LO
LO INPUT POWER (dBm)
–16
GAIN (dB)
NF (dB)
8
12
16
–4
5519 G06
4
0
6
10
14
2
–2
–4
12
16
20
NF
GAIN 8
4
10
14
18
6
2
0
–12 –8 –6 –2
T
A
= 85°C
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
T
A
= –40°C
T
A
= 25°C
LO INPUT POWER (dBm)
–16
15
IIP3 (dBm)
IIP2 (dBm)
16
17
18
19
20
IIP2
IIP3
21
0
10
20
30
40
50
60
–12 –8 –4 0
5519 G07
4
TA = 85°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = –40°C
TA = –40°C
LO INPUT POWER (dBm)
–16
–60
LO LEAKAGE (dBm)
–50
–40
–30
–20
–10
0
–12 –8 –4 0
5519 G08
4
T
A
= 85°C
T
A
= 25°CT
A
= –40°C
LO INPUT POWER (dBm)
–16
15
IIP3 (dBm)
IIP2 (dBm)
16
17
18
19
20
21
0
10
20
30
40
IIP3
IIP2 50
60
–12 –8 –4 0
5519 G09
4
LOW SIDE LO
LOW SIDE LO
HIGH SIDE LO
HIGH SIDE LO
IF INPUT POWER (dBm/TONE)
–16
P
OUT
, IM3 (dBm/TONE)
–30
P
OUT
IM3
–10
10
0
5519 G10
–50
–70
–40
–20
0
–60
–80
–90 –12 –8 –4 4
T
A
= 85°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= –40°C
T
A
= –40°C
IF INPUT POWER (dBm/TONE)
–16
P
OUT
, IM2 (dBm/TONE)
–30
P
OUT
IM2
–10
10
0
5519 G11
–50
–70
–40
–20
0
–60
–80
–90 –12 –8 –4 4
T
A
= 85°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= –40°C
T
A
= –40°C
LT5519
5
5519f
Conversion Gain vs IF Input
Power (One Input Tone) Conversion Gain, IIP3 and IIP2
vs Supply Voltage
IF, LO and RF Port Return Loss
vs Frequency
TYPICAL PERFOR A CE CHARACTERISTICS
UW
VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz,
unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.)
IF INPUT POWER (dBm)
–16
GAIN (dB)
0
2
4
0
5519 G12
–2
–4
–1
1
3
–3
–5
–6 –12 –8 –4 4
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
FREQUENCY (MHz)
0
–30
RETURN LOSS (dB)
–25
–20
–15
–10
–5
0
500 1000 1500 2000
5519 G13
IF PORT RF PORT
LO PORT
SUPPLY VOLTAGE (V)
4
–2
GAIN (dB)
IIP3, IIP2 (dBm)
0
2IIP3
IIP2
4
6
10
4.25 4.5 4.75 5
5519 G14
5.25 5.5
8
0
10
GAIN
20
30
40
60
50
LOW SIDE LO
LOW SIDE LO
LOW SIDE AND HIGH SIDE LO
HIGH SIDE LO
HIGH SIDE LO
UU
U
PI FU CTIO S
GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These
pins are used to improve isolation and are not intended as
DC or RF grounds for the IC. Connect these pins to low
impedance grounds on the PCB for best performance.
IF
+
, IF
–
(Pins 2, 3): Differential IF Signal Inputs. A differ-
ential signal must be applied to these pins through DC
blocking capacitors. The pins must be connected to ground
with 100Ω resistors (the grounds must each be capable of
sinking about 18mA). For best LO leakage performance,
these pins should be DC isolated from each other. An
impedance transformation is required to match the IF in-
put to the desired source impedance (typically 50Ω or 75Ω).
EN (Pin 5): Enable Pin. When the applied voltage is greater
than 3V, the IC is enabled. When the applied voltage is less
than 0.5V, the IC is disabled and the DC current drops to
about 1µA.
V
CC1
(Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is about 2mA. This pin
should be externally connected to V
CC
and have appropri-
ate RF bypass capacitors.
V
CC2
(Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is about 22mA. This pin
should have appropriate RF bypass capacitors as shown
in Figure␣ 2. The 1000pF capacitor should be located as
close to the pins as possible.
V
CC3
(Pin 8): Power Supply Pin for the Internal Mixer.
Typical current consumption is about 36mA. This pin
should be externally connected to V
CC
through an induc-
tor. A 39nH inductor is shown in Figure 2, though the value
is not critical.
RF
–
, RF
+
(Pins 10, 11): Differential RF Outputs. One pin
may be DC connected to a low impedance ground to realize
a 50Ω single-ended output. No external matching compo-
nents are required. A DC voltage should not be applied
across these pins, as they are internally connected through
a transformer winding.
LO
+
, LO
–
(Pins 14, 15): Differential Local Oscillator In-
puts. The LT5519 works well with a single-ended source
driving the LO
+
pin and the LO
–
pin connected to a low
impedance ground. No external 50Ω matching compo-
nents are required. An internal resistor is connected
across these pins; therefore, a DC voltage should not be
applied across the inputs.
Exposed Pad (Pin 17): DC and RF ground return for the
entire IC. This must be soldered to the printed circuit board
low impedance ground plane.
LT5519
6
5519f
BLOCK DIAGRA
W
IF
+
IF
–
LO
–
LO
+
85Ω
RF
+
RF
–
BIAS
EN
V
CC1
V
CC2
V
CC3
10pF
5519 BD
15
16
13
8
6
5
17 12 11 10 9
71234
14
GND
GND GND
GND
5pF
5pF
GND
GND
DOUBLE-
BALANCED
MIXER
HIGH SPEED
LO BUFFER
EXPOSED
PAD
TEST CIRCUIT
Figure 2. Test Schematic for the LT5519
REF DES VALUE SIZE PART NUMBER
C1, C2 220pF 0402 AVX 04023C221KAT2A
C3 33pF 0402 AVX 04023A330KAT2A
C4 1000pF 0402 AVX 04023A102KAT2A
C5 1µF 0603 Taiyo Yuden LMK107BJ105MA
L1 39nH 0402 Toko LL1005-FH39NJ
R1, R2 100Ω, 0.1% 0603 IRC PFC-W0603R-03-10R1-B
T1 4:1 SM-22 M/A-COM ETC4-1-2
R2
R1
C1
C2 C3
EN
C4C5
V
CC
RF
OUT
1000MHz
LO
IN
1140MHz
IF
IN
140MHz T1
16 15 14 13
12
11
10
9
17
8765
3
2
1
4
5
4
3
2
1
5519 F02
ER = 4.4 RF
GND
DC
GND
0.018"
0.018"
0.062"
L1
EN
IF
+
IF
–
LO
–
LO
+
RF
+
RF
–
V
CC1
V
CC2
V
CC3
GND
GND
GND
GND
GND
GND
LT5519
LT5519
7
5519f
APPLICATIO S I FOR ATIO
WUUU
The LT5519 consists of a double-balanced mixer, a high
performance LO buffer and bias/enable circuits. The RF
and LO ports may be driven differentially; however, they
are intended to be used in single-ended mode by connect-
ing one input of each pair to ground. The IF input ports
must be DC-isolated from the source and driven differen-
tially. The IF input should be impedance-matched for the
desired input frequency. The LO input has an internal
broadband 50Ω match with return loss better than 10dB
at frequencies up to 1800MHz. The RF output band ranges
from 700MHz to 1400MHz, with an internal RF trans-
former providing a 50Ω impedance match across the
band. Low side or high side LO injection can be used.
IF Input Port
The IF inputs are connected to the emitters of the double-
balanced mixer transistors, as shown in Figure 3. These
pins are internally biased and an external resistor must be
connected from each IF pin to ground to set the current
through the mixer core. The circuit has been optimized to
work with 100Ω resistors, which will result in approxi-
mately 18mA of DC current per side. For best LO leakage
performance, the resistors should be well matched; thus
resistors with 0.1% tolerance are recommended. If LO
leakage is not a concern, then lesser tolerance resistors
can be used. The symmetry of the layout is also important
for achieving optimum LO isolation.
The capacitors shown in Figure 3, C1 and C2, serve two
purposes. They provide DC isolation between the IF
+
and
IF
–
ports, thus preventing DC interactions that could
cause unpredictable variations in LO leakage. They also
improve the impedance match by canceling excess induc-
tance in the package and transformer. The input capacitor
value required to realize an impedance match at desired
frequency, f, can be estimated as follows:
CC fL L
IN EXT
12 2
1
2
==
π+()( )
where; f is in units of Hz, L
IN
and L
EXT
are in Henry, and C1,
C2 are in Farad. L
IN
is the differential input inductance of
the LT5519, and is approximately 1.67nH. L
EXT
represents
the combined inductances of differential external compo-
nents and transmission lines. For the evaluation board
shown in Figure 10, L
EXT
= 4.21nH. Thus, for f = 140MHz,
the above formula gives C1 = C2 = 220pF.
Table 1 lists the differential IF input impedance and reflec-
tion coefficient for several frequencies. A 4:1 balun can be
used to transform the impedance up to about 50Ω.
Table 1. IF Input Differential Impedance
FREQUENCY DIFFERENTIAL DIFFERENTIAL S11
(MHz) INPUT IMPEDANCE MAG ANGLE
10 10.1 + j0.117 0.663 180
44 10.1 + j0.476 0.663 179
70 10.1 + j0.751 0.663 178
140 10.2 + j1.47 0.663 177
170 10.2 + j1.78 0.663 176
240 10.2 + j2.53 0.663 174
360 10.2 + j3.81 0.663 171
500 10.2 + j5.31 0.663 167
LO Input Port
The simplified circuit for the LO buffer input is shown in
Figure 4. The LO buffer amplifier consists of high speed
limiting differential amplifiers, optimized to drive the mixer
quad for high linearity. The LO
+
and LO
–
ports can be
driven differentially; however, they are intended to be
driven by a single-ended source. An internal resistor
connected across the LO
+
and LO
–
inputs provides a
broadband 50Ω impedance match. Because of the resis-
tive match, a DC voltage at the LO input is not recom-
mended. If the LO signal source output is not AC coupled,
then a DC blocking capacitor should be used at the LO
input.
Figure 3. IF Input with External Matching
C1
C2
C3
IF
IN
50Ω
T1
4:1 2
3
100Ω
0.1%
100Ω
0.1%
V
CC
LT5519
IF
+
IF
–
18mA
18mA
5519 F03
LT5519
8
5519f
APPLICATIO S I FOR ATIO
WUUU
Though the LO input is internally matched to 50Ω, there
may be some cases, particularly at higher frequencies or
with different source impedances, where a further opti-
mized match is desired. Table 2 includes the single-ended
input impedance and reflection coefficient vs frequency
for the LO input for use in such cases.
Table 2. Single-Ended LO Input Impedance
FREQUENCY INPUT S11
(MHz) IMPEDANCE MAG ANGLE
200 72.3 – j16.1 0.223 –28.4
400 63.3 – j11.3 0.153 –34.7
600 61.6 – j7.5 0.124 –29.2
800 61.9 – j6.0 0.119 –23.6
1000 62.7 – j6.1 0.125 –22.7
1200 63.2 – j7.4 0.134 –25.5
1400 63.3 – j9.5 0.144 –30.8
1600 62.8 – j12.0 0.155 –37.1
1800 61.6 – j14.2 0.163 –43.4
RF Output Port
An internal RF transformer, shown in Figure 5, reduces the
mixer-core impedance to provide an impedance of 50Ω
across the RF
+
and RF
–
pins. The LT5519 is designed and
tested with the outputs configured for single-ended opera-
tion, as shown in the Figure 5; however, the outputs can be
used differentially as well. A center tap in the transformer
provides the DC connection to the mixer core and the
transformer provides DC isolation at the RF output. The
RF
+
and RF
–
pins are connected together through the
secondary windings of the transformer; thus a DC voltage
should not be applied across these pins.
The impedance data for the RF output, listed in Table 3, can
be used to develop matching networks for different load
impedances.
Table 3. Single-Ended RF Output Impedance
FREQUENCY OUTPUT S11
(MHz) IMPEDANCE MAG ANGLE
700 27.6 + j32.0 0.465 103
800 39.7 + j32.1 0.354 88.1
900 50.9 + j23.5 0.227 74.7
1000 53.5 + j10.3 0.105 65.5
1100 48.3 + j1.3 0.022 143
1200 42.0 – j3.1 0.093 –157
1300 36.6 – j3.4 0.159 –164
1400 33.0 – j2.0 0.207 –172
Operation at Different Input Frequencies
On the evaluation board shown in Figure 10, the input of
the LT5519 can be easily matched for different frequencies
by changing the capacitors, C1, C2 and C3. Capacitors C1
and C2 set the input matching frequency while C3 im-
proves the LO to RF leakage performance. Decreasing the
value of C3 at higher input frequencies reduces its impact
on conversion gain. Table 4 lists some actual values used
at selected frequencies.
Figure 4. LO Input Circuit
LO
IN
50Ω14
15
V
CC
5519 F04
85Ω
LO
–
LO
+
LT5519 5pF
5pF
220Ω
220Ω
Figure 5. RF Output Circuit
RFOUT
50Ω
11
10
VCC
10pF
LT5519
VCC3
5519 F05
RF–
RF+
8
LT5519
9
5519f
Table 4. Input Capacitor Values vs Frequency
FREQUENCY CAPACITANCE (C1, C2) CAPACITANCE (C3)
(MHz) (pF) (pF)
44 2200 33
70 820 33
140 220 33
240 68 15
300 39 6.8
350 27 6.8
440 18 6.8
The performance was evaluated with the input tuned for
each of these frequencies and the results are summarized
in Figures 6-8. The same IF input balun transformer was
used for all measurements. In each case, the LO input
frequency was adjusted to maintain an RF output fre-
quency of 1000MHz.
Low Frequency Matching of the RF Output Port
Without any external components on the RF output, the
internal transformer of the LT5519 provides a good 50Ω
impedance match for RF frequencies above approximately
850MHz. Below this frequency, the return loss drops
below 10dB and degrades the conversion gain. The addi-
tion of a single 10pF capacitor in series with the RF output
improves the match at lower RF frequencies, shifting the
10dB return loss point to about 700MHz, as demonstrated
in Figure 9. This change also results in an improvement of
the conversion gain.
RF OUTPUT FREQUENCY (MHz)
700
–3
–2
0
1000 1200
5519 F09
–4
–5
800 900 1100 1300 1400
–6
–7
–1
–15
–10
0
–20
–25
–30
–35
–5
GAIN
GAIN (dB)
RETURN LOSS (dB)
NO COUT
NO COUT
COUT = 10pF
COUT = 10pF RETURN LOSS
Figure 9. Conversion Gain and Return Loss vs Output Frequency
APPLICATIO S I FOR ATIO
WUUU
Figure 8. LO to RF Leakage vs Tuned IF Input Frequency
Figure 7. IIP3 and IIP2 vs Tuned IF Input Frequency
Figure 6. Conversion Gain and Single Sideband Noise Figure
vs Tuned IF Input Frequency
INPUT FREQUENCY (MHz)
0
GAIN (dB)
NF (dB)
2
4
6
400
5519 F06
0
–2
1
3
5
–1
–3
–4
12
16
20
8
4
10
14
18
6
2
0
100 200 300 500
HIGH SIDE LO
INPUT TUNED FOR EACH TEST FREQUENCY
HIGH SIDE LO
LOW SIDE
LOW SIDE
SSB NF
GAIN
V
CC
= 5V
P
LO
= –5dBm
T
A
= 25°C
INPUT FREQUENCY (MHz)
0
23
25
27
400
5519 F07
21
19
100 200 300 500
17
15
13
50
60
70
40
30
20
10
0
IIP3 (dBm)
IIP2 (dBm)
INPUT TUNED FOR EACH TEST FREQUENCY
LOW SIDE
LOW SIDE
IIP2
IIP3
HIGH SIDE
HIGH SIDE LO
V
CC
= 5V, T
A
= 25°C
P
LO
= –5dBm
INPUT FREQUENCY (MHz)
1
–60
LEAKAGE (dBm)
–50
–40
–30
–20
–10
0
100 200 300 400
5519 F08
500
LOW SIDE LO
HIGH SIDE LO
INPUT TUNED FOR EACH TEST FREQUENCY
VCC = 5V
PLO = –5dBm
TA = 25°C
LT5519
10
5519f
Figure 10. Evaluation Board Layout
(10a) Top Layer Silkscreen
(10b) Top Layer Metal
TYPICAL APPLICATIO S
U
LT5519
11
5519f
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
4.00 ± 0.10
(4 SIDES)
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
PIN 1
TOP MARK
0.55 ± 0.20
1615
1
2
BOTTOM VIEW—EXPOSED PAD
2.15 ± 0.10
(4-SIDES)
0.75 ± 0.05 R = 0.115
TYP
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
(UF) QFN 0503
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.72 ±0.05
0.30 ±0.05
0.65 BSC
2.15 ± 0.05
(4 SIDES)
2.90 ± 0.05
4.35 ± 0.05
PACKAGE OUTLINE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LT5519
12
5519f
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
www.linear.com
LINEAR TECHNOLOGY CORPORATION 2004
LT/TP 0104 1K • PRINTED IN USA
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