VS-ST180C Series
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Phase Control Thyristors
(Hockey PUK Version), 350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 350 A
VDRM/VRRM 400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
VTM 1.96 V
IGT 90 mA
TJ-40 °C to +125 °C
Package A-PUK (TO-200AB)
Circuit configuration Single SCR
A-PUK (TO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
350 A
Ths 55 °C
IT(RMS)
660 A
Ths 25 °C
ITSM
50 Hz 5000 A
60 Hz 5230
I2t50 Hz 125 kA2s
60 Hz 114
VDRM/VRRM 400 to 2000 V
tqTypical 100 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST180C..C
04 400 500
30
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
VS-ST180C Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
350 (140) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 660
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5000
t = 8.3 ms 5230
t = 10 ms 100 % VRRM
reapplied
4200
t = 8.3 ms 4400
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
125
kA2s
t = 8.3 ms 114
t = 10 ms 100 % VRRM
reapplied
88
t = 8.3 ms 81
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.08 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.14
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.14
Maximum on-state voltage VTM Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Maximum (typical) latching current IL1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tqITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
VS-ST180C Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNIT
S
typ. max.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
180 -
mATJ = 25 °C 90 150
TJ = 125 °C 40 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.9 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.2 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT
S
Maximum operating junction
temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance,
case to heatsink RthC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 % 4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.015 0.015 0.011 0.011
TJ = TJ maximum K/W
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
VS-ST180C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
110
100
50
60
70
80
90
40
130
0
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50
120
100 150 200 250
ST180C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction angle
60°
30°
90° 120°
180°
0200 400
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
300100
110
100
40
50
60
70
80
90
20
130
120
30
ST180C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
30°
60°
90°
120°
180°
Ø
Conduction period
DC
0
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50 100 150 200 250 300 350 400 450
Ø
Conduction angle
60°
30°
90° 120°
180°
ST180C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.17 K/W
110
100
40
50
60
70
80
90
20
130
120
30
0200 400 500 600 700
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
300100
110
100
40
50
60
70
80
90
20
130
120
30
ST180C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
30°
60°
90°
120°
180°
Ø
Conduction period
DC
700
600
100
200
300
400
500
0
900
1000
0
Maximum Average
On-State Power Loss (W)
Average On-State Current (A)
50
800
100 150 200 250 300 350 400 450
180°
120°
90°
60°
30° RMS limit
Ø
Conduction angle
ST180C..C Series
TJ = 125 °C
700
600
100
200
300
400
500
0
900
1000
1100
1200
1300
0
Maximum Average
On-State Power Loss (W)
Average On-State Current (A)
800
100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30° RMS limit
ST180C..C Series
TJ = 125 °C
Ø
Conduction period
VS-ST180C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
2000
1 10 100
2500
3500
4000
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
4500
3000
At any rated load condition and with
rated VRRM applied following surge
ST180C..C Series
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3500
4000
4500
5000
3000
No Voltage Reapplied
Rated VRRM Reapplied
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
ST180C..C Series
100
123456
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
TJ = 25 °C
TJ = 125 °C
ST180C..C Series
0.001
0.01
0.1
1
0.001
Square Wave Pulse Duration (s)
ZthJ-hs - Transient
Thermal Impedance (K/W)
0.01 0.1 1 10
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
ST180C..C Series
VS-ST180C Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
TJ = 25 °C
TJ = 40 °C
TJ = 125 °C
(b)
(1) (2) (3) (4)
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
Frequency limited by PG(AV)
VGD
IGD
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r ≤ 1 µs
Device: ST180C..C Series
(a)
- Thyristor
1-Vishay Semiconductors product
2
-Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
9
8
- Critical dV/dt:
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- C = PUK case A-PUK (TO-200AB)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
Device code
51 32 4 6 7 8 9
STVS-180C20C1-
Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX. 0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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