SST34HF3284-70-4E-L1P - Silicon Storage Technology, Inc.

S71282-00-000 8/05

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation.

CSF and ComboMemory are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Advance Information

FEATURES:

• Flash Organizati on : 2M x16 or 4M x8

• Dual-Bank Architecture for Concurrent

Read/Write Operation

– 32 Mbit Top Sector Prot ection

– SST34HF32x4x: 8 Mbit + 24Mbit

– SST34HF32x2x: 4 Mbit + 28 Mbit

• (P)SRAM Organization:

– 4 Mbit: 256K x16

– 8 Mbit: 512K x16

• Single 2.7-3.3V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Ret ention

• Low Power Consumption:

– Active Current: 25 mA (typic al)

– Standby Current: 20 µA (typical)

• Hardware Sector Protection (WP#)

– Protects 8 KWord in the smaller bank by holding

WP# low and unpr otects by holding WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading

data array

• Byte Selection for Flash (CIOF pin)

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Flash Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Read Access Time

– Flash: 70 ns

– (P)SRAM: 70 ns

• Security ID Feature

– SST: 128 bits

– User: 256 bits

• Latched Address and Data

• Fast Erase and Pro gram (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Gener ation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Packages Available

– 56-ball LFBGA (8mm x 10mm)

– 62-ball LFBGA (8mm x 10mm)

• All non-Pb (lead-free) de vices are RoHS compliant

PRODUCT DESCRIPTION

The SST34HF32x2xC/32x4x ComboMemo ry devices inte-

grat e either a 2 M x16 or 4M x8 CMOS flash memory bank

with either a 256K x16 or 512K x16 CMOS SRAM or

pseudo SRAM (PSRAM) memory bank in a multi-chip

pac kage (MCP). These devices are f abricated using SST’s

proprietar y, high-perfor mance CMOS SuperFlash technol-

ogy incor porating the split-gate cell design and thick-oxide

tunneling injector to attain better reliability and manufactur-

ability compared with alternate approaches. The

SST34HF32x2xC/32x4x devices are ideal for applications

such as cellular phones, GPS devices, PDAs, and other

por table electronic devices in a low power and small form

f actor system.

The SST34HF32x2xC/32x4x feature dual flash memory

bank architecture allowing for concurrent operations

between the two flash memory banks and the (P)SRAM.

The de vices can read data from either bank while an Erase

or Program operation is in progress in the opposite bank.

The two flash memory banks are par titioned into 4 Mbit +

28 Mbit or 8 Mbit + 24 Mbit with top sector protection

options for storing boot code, program code, configuration/

parameter dat a and user data.

The SuperFlash technology provides fixed Erase and Pro-

gram ti mes, independent of the number of Erase/Program

cycles that have occurred. Therefore, the system software

or hardw are does no t ha v e t o be modified or de-r ated as is

necessary with alternative flash technologies , whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles. The SST34HF32x2xC/32x4x devices offer a

guaranteed endurance of 10,000 cycles. Data retention is

rated at greater than 100 years. With high-performance

Program operations, the flash memory banks provide a

typical Program time of 7 µsec. The entire flash memory

bank can be er ased and progr ammed word-b y-word in typ-

ically 4 seconds for the SST34HF32x2xC/32x4x, when

using interface features such as Toggle Bit, Data# Polling,

32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

SST34HF32x4x 32Mb CSF + 4/8/16 Mb SRAM (x16) MCP ComboMemory

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

or R Y/BY# to indicate the completion of Program operation.

To protect against inadvertent flash write, the

SST34HF32x2xC/32x4x de vices contain on-chip har dware

and softwar e data protect ion schemes.

The flash and (P)SRAM oper ate as two independent mem-

ory banks with respective bank enable signals. The mem-

ory bank selection is done by tw o bank enable signals. The

(P)SRAM bank enable signals, BES1# and BES2, select

the (P)SRAM bank. Th e flash memory bank enable signal,

BEF#, has to be used with So ftware Data Protection (SDP)

command sequence when controlling the Erase and Pro-

gram operations in the flash memory bank. The memory

banks are superimposed in the same memory address

space where the y share common address lines , data lines ,

WE# and OE# which minimize power consumption and

area.

Designed, man uf actured, and tested f or applications requir-

ing low pow er and small f orm factor, the SST34HF32x2xC/

32x4x are offered in both commercial and extended tem-

peratures and a small footprint package to meet board

space constraint requirements. See Figure 1 for pin assign-

ments.

Device Operation

The SST34HF32x2xC/32x4x uses BES1#, BES2 and

BEF# to control operation of either the flash or the

(P)SRAM memory bank. When BEF# is low , th e flash bank

is activated for Read, Program or Erase operation. When

BES1# is low, and BES2 is high the (P)SRAM is activated

f or Read and Write operation. BEF# and BES1# cann ot be

at low level, and BES2 cannot be at high level at the same

time. If all bank enable signals are asserted, bus con-

tention will result and the device ma y suffer permanent

damage. All address, data, and control lines ar e shared by

flash and (P)SRAM memory banks which minimizes po wer

consumption and loading. The device goes into standby

when BEF# and BES1# bank enables are raised to VIHC

(Logic High) or when BEF# is high and BES2 is low.

Concurrent Read/Write Operation

Dual bank architecture of SST34HF3 2x2xC/32x4x devices

allows the Concurrent Read/Write operation whereby the

user can read from one bank while programming or eras-

ing in the other bank. This ope ration can be used wh en the

user needs to read system code in one bank while updat-

ing data in the other ba nk. See Table 3 f or du al-bank mem-

ory organization.

Note: For the purposes of this table, write means to perform

Block-/Sector-Erase or Program operations

as applicable to the appropriate bank.

Flash Read Operation

The Read oper ation of t he SST34HF32x2xC/32x4x is con-

trolled by BEF# and OE#, both have to be low for the sys-

tem to obtain data from the outputs. BEF# is used for

device selection. When BEF# is high, the chip is dese-

lected and only standby power is consumed. OE# is the

output control and is used to gate data from the output pins .

The data b us is in high impedance state when eith er BEF#

or OE# is high. Refer to the Read cycle timing diagram for

further details (Figure 6).

CONCURRENT READ/WRITE STATES

Flash

(P)SRAMBank 1 Bank 2

Read Write No Operation

Write Read No Operation

Write No Operation Read

No Operation Write Read

Write No Operation Write

No Operation Write Write

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Flash Program Operation

These devices are programmed on a word-by-word or

byt e-by-byte basis depen ding on the stat e of the CI OF pin.

Before programming, one must ensure that the sector

being prog rammed is fully er ased.

The Progr am operat ion is accomplished in t hree steps:

1. Software Data Protection is initiated using the

three-byte load sequence.

2. Address and data are loaded.

During the Program operation, the addresses are

latched on the falling edge of either BEF# or WE#,

whichever occurs last. The data is latched on the

rising edge of either BEF# or WE#, whichever

occurs first.

3. The internal Program operation is initiated after

the rising edge of the fourth WE# or BEF#, which-

ever occurs first. The Program operation, once ini-

tiated, will be completed typically within 7 µs.

See Figures 7 and 8 for WE# and BEF# controlled Pro-

gram operation timing diagrams and Figure 21 for flow-

char ts. During the Program operation, the only valid reads

are Data# Polling and Toggle Bit. During the internal Pro-

gram o peration, the host is free to perform additional tasks.

Any commands issued during an internal Program opera-

tion are ignored.

Flash Sector- /Block-Erase Operation

These devices offer both Sector-Erase and Block-Erase

operatio ns. These operations allo w the system to erase th e

devices on a sector-by-sector (or block-by-block) basis.

The sector architectu re is based on a uniform sector siz e of

2 KWord. The Block-Erase mode is based on a uniform

bl ock siz e of 32 KW ord. The Sector-Erase oper ation is initi-

ated by executing a six-byte command sequence with a

Sector-Erase command (50H) and sector address (SA) in

the last b us cycle . The Bloc k-Er ase oper ation is init iated b y

executing a six-byte command sequence with Block-Erase

command (30H) and block address (BA) in the last bus

cycle. The sector or block address is latched on the falling

edge of the sixth WE# pu lse, while the command (30H or

50H) is latched on the rising edge of the sixth WE# pulse.

The internal Erase operation begins after the sixth WE#

pulse. Any commands issued dur ing the Block- or Sector-

Erase operation are ignored except Erase-Suspend and

Erase-Resume. See Figures 12 and 13 for timing wave-

forms.

Flash Chip-Erase Operation

The SST34HF32x2xC/32x4x provide a Chip-Erase opera-

tion, which allows the user to erase all flash sectors/blocks

to the “1” state. This is useful when the device must be

quickly er ased.

The Chip-Erase operation is initiated by executing a six-

byte command sequence with Chip-Er ase command (10H)

at address 555H in the last byte sequence. The Erase

operation begins with the rising edge of the sixth WE# or

BEF#, whichever occurs first. Dur ing the Erase operation,

the only valid read is Toggle Bits or Data# Polling. See

Table 6 for the command sequence, Figure 11 for timing

diagram, and Figure 25 for the flowchart. Any commands

issued during the Chip-Erase oper at ion are ignored. When

WP# is low, any attempt to Chip-Erase will be ignored.

Flash Erase-Suspend/-Resume Operations

The Erase-Suspend operation temporarily suspends a

Sector- or Block-Erase operation thus allowing data to be

read from any memor y location, or program data into any

sector/block that is not suspended for an Erase operation.

The operat ion is ex ecuted by issuing a one-b yte comman d

sequence with Erase-Suspend command (B0H). The

de vice automatically enters read mode no more than 10 µs

after the Erase-Suspend command had been issued. (TES

maximum latency equals 10 µs.) Valid data can be read

from any sector or block that is not suspended from an

Erase opera tion. Reading at address locatio n within erase -

suspended sectors/blocks will output DQ2 toggling and

DQ6 at “1”. While in Erase-Suspend mode, a Program

operation is allowed except for the sector or block selected

for Erase-Suspend. To resume Sector-Erase or Block-

Erase operation which has been suspended, the system

must issue an Erase-Resume command. The operat ion is

executed by issuing a one-byte command sequence with

Erase Resume command (30H) at any address in the one-

byt e sequence.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Flash Write Operation Status Detection

The SST34HF32x2xC/32x4x provide one hardware and

two software means to detect the completion of a Write

(Program or Er ase) cycle, in order to optimize the system

Write cycle time. The hardware detection uses the

Ready/Busy# (RY/BY#) pin. The software detection

includes two status bits: Data# Polling (DQ7) and To ggle

Bit (DQ6). The End-of-Write detection mode is enabled

after the rising edge of WE#, which initiates the internal

Program or Erase operation.

The actual completion of the nonvolatile wr ite is asynchro-

nous with th e system; theref ore, either a Ready/ Busy# (R Y/

BY#), Data# P olling (DQ7) or Toggle Bit (DQ6) read ma y be

simultaneous with the completion of the Write cycle. If this

occurs, the system may possibly get an erroneous result,

i.e., valid data may appear to conflict with either DQ7 or

DQ6. In order to p revent spurious rejection, if a n erroneous

result occurs, the software routine should include a loop to

read the accessed location an additional two (2) times. If

both reads are valid, then the device has completed the

Write cycle, otherwise the rejection is valid.

Ready/Busy# (RY/BY#)

The SST34HF32x2xC/32x4x include a Ready/Busy# (RY/

BY#) output signal. R Y/BY# is an open drain output pin that

indicates whether an Erase or Program operation is in

progress. Since RY/BY# is an open drain output, it allows

several devices to be tied in parallel to VDD via an exter nal

pull-up resistor. After the rising edge of the final WE# pulse

in the command sequence, the RY/BY# status is valid.

When RY/BY# is actively pulled low, it indicates that an

Erase or Program operation is in progress. When RY/BY#

is high (Ready), the devices may be read or left in standby

mode.

Byte/Word (CIOF)

The device includes a CIOF pin to control whether the

de vice data I/O pins ope rate x8 or x1 6. If the CIOF pin is at

logic “1” (VIH) the device is in x16 data configuration: all

data I/0 pins DQ0-DQ15 are active and controlled by BEF#

and OE#.

If the CIOF pin is at logic “0” , the device is in x8 data config-

uration: only data I/O pins DQ0-DQ7 are active and con-

trolled by BEF# and OE#. The remaining data pins DQ8-

DQ14 are at Hi-Z, while pin DQ15 is used as the address

input A-1 f or the Least Significant Bit of the address b us.

Flash Data# Polling (DQ7)

When the de vices are in an internal Program oper ation, any

attempt to read DQ7 will produce the complement of the

true data. Once the Program operation is completed, DQ7

will produce true data. During internal Erase operation, any

attempt to read DQ7 will produce a ‘0’. Once the internal

Erase operation is completed, DQ7 will produce a ‘1’. The

Data# P olling is valid after the rising edge of fourth WE# (or

BEF#) pulse for Program operation. For Sector-, Block-, or

Chip-Erase, the Data# Polling is valid after the rising e dge

of sixth WE# (or BEF#) pulse. See Figure 9 for Data# Poll-

ing (DQ7) timing di agram and Figure 22 f or a flowcha rt.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Toggle Bits (DQ6 and DQ2)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ6 will produce alternating “1”s

and “0”s, i.e., toggling between 1 and 0. When the internal

Program or Erase operation is completed, the DQ6 bit will

stop toggling. The device is then ready for the next opera-

tion. The toggle bit is v alid after the rising edge of the f ourth

WE# (or BEF#) pulse for Program operations. For Sector-,

Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the

rising edge of sixth WE# (or BEF#) pulse. DQ6 will be set to

“1” if a Read operation is attempted on an Erase-sus-

pended Sector/Block. If Program operation is initiated in a

sector/b lock not selected in Erase-Suspend mode, DQ6 will

toggle.

An additional Toggle Bit is available on DQ2, which can be

used in conjunction with DQ6 to check whether a pa rticular

sector is being activ ely erased or erase-suspended. Table 1

shows detailed stat us bit information. The Toggle Bit (DQ2)

is valid after the rising edge of the last WE# (or BEF#)

pulse of a Write opera tion. See Figure 10 f or Toggle Bit tim-

ing diagram and Figure 22 for a flowchart.

Note: DQ7, DQ6, and DQ2 require a valid address when reading

status information. The address must be in the bank where

the operation is in progress in order to read the oper ation sta-

tus. If the address is pointing to a different bank (not busy),

the device will output array data.

Data Protection

The SST34HF32x2xC/32x4x provide both hardware and

software features to protect nonvolatile data from inadvert-

ent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or BEF# pulse of less than

5 ns will not initiate a Write cycle.

VDD Power Up/Down Detection: The Write operation is

inhibited when VDD is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, BEF# high, or WE#

high will inhibit the Wr ite operation. This prevents inadvert-

ent writes during power-up or po wer-do wn.

Hardware Block Protection

The SST34HF32x2xC/32x4x provide a hardware block

protection which prot ects the outermost 8 KWord/ 16 KByte

in Bank 1. The block is protected when WP# is held low.

When WP# is held low and a Block-Erase command is

issued to the protected block, the data in the outer most 8

KWord/16 KByte section will be protected. The rest of the

block will be erased. See Table 3 f or Block-Protection loca-

tion.

A user can disable block protection by driving WP# high

thus allowing erase or program of data into the protected

sectors. WP# must be held high prior to issuing the write

command and remain stable until after the entire Write

operation has completed. If WP# is left floating, it is inter-

nally held high via a pull-up resistor, and the Boot Block is

unprotected, enabling Program and Erase operations on

that b loc k.

Hardware Reset (RST#)

The RST# pin provides a hardw are method of resetting the

device to read array data. When the RST# pin is held low

f or at least TRP, any in-progress oper ation will terminate and

return to Read mode (see Figure 18). When no internal

Progra m/Er ase oper atio n is in prog ress, a minimum period

of TRHR is required aft er RST# is driven high befor e a valid

Read can tak e place (see Figur e 17).

The Erase oper ation that has been interrupted needs to be

reinitiated after the de vice resumes normal operation mode

to ensure data integrity. See Figures 17 and 18 for timing

diagrams.

TABLE 1: WRITE OPERATION STATUS

Status DQ7DQ6DQ2RY/BY#

Normal

Operation Standard

Program DQ7# Toggle No Toggle 0

Standard

Erase 0 Toggle Toggle 0

Erase-

Suspend

Mode

Read From

Erase

Suspended

Sector/Block

1 1 Toggle 1

Read From

Non-Erase

Suspended

Sector/Block

Data Data Data 1

Program DQ7# Toggle No Toggle 0

T1.1 1282

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Software Data Protection (SDP)

The SST34HF32x2xC/32x4x pro v ide the JEDEC standar d

Software Data Protection scheme for all data alteration

operations, i.e., Program and Erase. Any Program opera-

tion requires the inclusion of the three-byte sequence. The

three-byte load sequence is used to initiate the Program

operation, providing optimal protection from inadvertent

Write operations, e.g., during the system power-up or

pow e r-d o w n. Any Erase operation r equir es t he in clusion of

six-byte sequence. The SST34HF32x2xC/32x4x are

shipped with the Software Data Protection permanently

enabled. See Table 6 for the specific software command

codes. During SDP command sequence, invalid com-

mands will abort the device to Read mode within TRC. The

contents of DQ15-DQ8 are “Don’t Care” during any SDP

command sequence .

Common Flash Memory Interface (CFI)

These devices also contain the CFI information to

describe the characteristics of the devices. In order to

enter the CFI Query mode, the system must write the

three-byte sequence, same as the Software ID Entry com-

mand with 98H (CFI Query command) to address

BKX555H in the last byte sequence. In order to enter the

CFI Query mode, the system can also use the one-byte

sequence with BKX55H on Address and 98H on Data Bus.

See Figure 15 for CFI Entry and Read timing diagram.

Once the device enters the CFI Quer y mode, the system

can read CFI data at the addresses given in Tables 7

through 9. The system must write the CFI Exit command

to return to Read mode from the CFI Query mode.

Security ID

The SST34HF32x2xC/32x4x devices offer a 136-bit Secu-

rity ID space. The Secure ID space is divided into tw o seg-

ments—one 128-bit f actory programmed segment and one

128-word (256-byte) user-programmed segment. The first

segment is programmed and loc ked at SST with a unique,

128-bit number. The user segment is left un-programmed

f or the customer to progra m as desired.

To program the user segment of the Secur ity ID, the user

must use the Security ID Progr am command. End-of-Write

status is checked by reading the toggle bits. Data# Polling

is not used for Security ID End-of-Write detection. Once

programming is complete, the Sec ID should be locked

using the User-Sec-ID-Program-Lock-Out. This disables

any future corr uption of this space. Note that regardless of

whether or not the Sec ID is locked, neither Sec ID seg-

ment can be erased . The Secure ID space can be queried

by ex ecuting a three-b yte command sequen ce with Query-

Sec-ID command (88H) at address 555H in the last byte

sequence. To exit this mode, the Exit-Sec-ID command

should be e x ecuted. Ref er to Table 6 f or more details .

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Product Identification

The Product Identification mode identifies the device as

either SST34HF32x2x or SST34HF32x4x and manufac-

turer as SST. This mode may be accessed by software

operations only. The hardware device ID Read operation,

which is typically used b y progr ammers cannot be used o n

this device because of the shared lines between flash and

(P)SRAM in the multi-chip package. Therefore, application

of high voltage to pin A9 may damage this device. Users

may use the software Product Identification operation to

identify the part (i.e., using the de vice ID) when using multi-

ple manufacturers in the same socket. For details, see

Tables 5 and 6 for software operation, Figure 14 for the

Software ID Entry and Read timing diagram and Figure 23

f or the ID Entry command sequence flowchart.

Note: BK = Bank Address (A20-A18)

Product Identification Mode Exit/

CFI Mode Exit

In order to return to the standard Read mode , the Softw are

Product Identification mode must be exited. Exit is accom-

plished by issuing the Software ID Exit command

sequence, which returns the device to the Read mode.

This command ma y also be used to reset the de vice to the

Read mode after any inadvertent transient condition that

apparently causes the device to behave abnormally, e.g.,

not read correctly. Please note that the Software ID Exit

command is ignored during an internal Program or Erase

operation. See Table 6 for software command codes, Fig-

ure 16 f or t iming wa v ef orm and Figure 23 f o r a flo wchart.

(P)SRAM Operation

With BES1# low, BES2 and BEF# high, the

SST34HF32x2xC/32x4x operate as either 256K x16 or

512K x16 CMOS (P)SRAM, with fully static operation

requiring no external clocks or timing strobes. The

SST34HF32x2xC/32x4x (P)SRAM is mapped into the first

512 KWord address space. When BES1#, BEF# are high

and BES2 is lo w , all memory banks are deselected and the

device enters standby. Read and Write cycle times are

equal. The control signals UBS# and LBS# pro vide access

to the upper data b yte and lo w er data b yte . See Tab le 5 f o r

x16 (P)SRAM Read and Write data byte control modes of

operation.

(P)SRAM Read

The (P)SRAM Read operation of the SST34HF32x2xC/

32x4x is controlled by OE# and BES1#, both have to be

low with WE# and BES2 hi gh f or th e system to obtain dat a

from the output s. BES1# an d BES2 are use d f or ( P)SRAM

bank selection. OE# is the output control and is used to

gate data from the output pins. The data bus is in high

impedance state when OE# is high. Refer to the Read

cycle timing diagram, Figure 3, for further details.

(P)SRAM Write

The (P)SRAM Write operation of the SST34HF32x2xC/

32x4x is controlled by WE# and BES1#, both have to be

low, BES2 must be high for the system to write to the

(P)SRAM. During the W ord-Write operation, the addresses

and data are ref erenced to t he rising edge of either BES1#,

WE#, or the falling edge of BES2 whichever occurs first.

The write time is measured from the last falling edge of

BES#1 or WE# or the rising edge of BES2 to the first rising

edge of BES1#, or WE# or the falling edge of BES2. Ref er

to the Write cycle t iming d iag r ams , Figur es 4 and 5, for fur-

ther details .

TABLE 2: PRODUCT IDENTIFICATION

ADDRESS DATA

Manufacturer’s ID BK0000H 00BFH

Device ID

SST34HF3242C/3282 BK0001H 7351H

SST34HF3244C/3284 BK0001H 7353H

T2.0 1282

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

1282 B1.2

SuperFlash Memory

(Bank 1)

I/O Buffers

SuperFlash Memory

(Bank 2)

4 / 8 Mbit

SRAM or PSRAM

20- A0

DQ15/A-1 - DQ

Control

Logic

RST#

BEF#

WP#

LBS#

UBS#

BES1#

BES21

OE#2

WE#2

RY/BY#

Address

Buffers

Address

Buffers

Notes: 1. BES2 applies only to the SST34HF32x2x/32x4x devices

2. For LS package only: WE# = WEF# and/or WES#

OE# = OEF# and/or OES#

FUNCTIONAL BLOCK DIAGRAM

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 3: DUAL-BANK MEMORY ORGANIZATION (1 OF 2)

SST34HF3242C/3282 SST34HF3244C/3284 Block Block Size Address Range x8 Address Range x16

Bank 1

BA63 8 KW / 16 KB 3FC000H–3FFFFFH 1FE000H–1FFFFFH

24 KW / 48 KB 3F0000H–3FBFFFH 1F8000H–1FDFFFH

BA62 32 KW / 64 KB 3E 0000H–3EFFFFH 1F0000H–1F7FFFH

BA61 32 KW / 64 KB 3D0000H–3DFFFFH 1E8000H–1EFFFFH

BA60 32 KW / 64 KB 3C0000H–3CFFFFH 1E0000H–1E7FFFH

BA59 32 KW / 64 KB 3B0000H–3BFFFFH 1D8000H–1DFFFFH

BA58 32 KW / 64 KB 3A0000H–3AFFFFH 1D0000H–1D7FFFH

BA57 32 KW / 64 KB 390000H–39FFFFH 1C8000H–1CFFFFH

BA56 32 KW / 64 KB 380000H–38FFFFH 1C0000H–1C7FFFH

Bank 2

BA55 32 KW / 64 KB 370000H–37FFFFH 1B8000H–1BFFFFH

BA54 32 KW / 64 KB 360000H–36FFFFH 1B0000H–1B7FFFH

BA53 32 KW / 64 KB 350000H–35FFFFH 1A8000H–1AFFFFH

BA52 32 KW / 64 KB 340000H–34FFFFH 1A0000H–1A7FFFH

BA51 32 KW / 64 KB 330000H–33FFFFH 198000H–19FFFFH

BA50 32 KW / 64 KB 320000H–32FFFFH 190000H–197FFFH

BA49 32 KW / 64 KB 310000H–31FFFFH 188000H–18FFFFH

BA48 32 KW / 64 KB 300000H–30FFFFH 180000H–187FFFH

Bank 2

BA47 32 KW / 64 KB 2F0000H–2FFFFFH 178000H–17FFFFH

BA46 32 KW / 64 KB 2E0000H–2EFFFFH 170000H–177FFFH

BA45 32 KW / 64 KB 2D0000H–2DFFFFH 168000H–16FFFFH

BA44 32 KW / 64 KB 2C0000H–2CFFFFH 160000H–167FFFH

BA43 32 KW / 64 KB 2B0000H–2BFFFFH 158000H–15FFFFH

BA42 32 KW / 64 KB 2A0000H—2AFFFFH 150000H–157FFFH

BA41 32 KW / 64 KB 290000H—29FFFFH 148000H–14FFFFH

BA40 32 KW / 64 KB 280000H—28FFFFH 140000H–147FFFH

BA39 32 KW / 64 KB 270000H—27FFFFH 138000H–13FFFFH

BA38 32 KW / 64 KB 260000H—26FFFFH 130000H–137FFFH

BA37 32 KW / 64 KB 250000H—25FFFFH 128000H–12FFFFH

BA36 32 KW / 64 KB 240000H—24FFFFH 120000H–127FFFH

BA35 32 KW / 64 KB 230000H—23FFFFH 118000H–11FFFFH

BA34 32 KW / 64 KB 220000H—22FFFFH 110000H–117FFFH

BA33 32 KW / 64 KB 210000H—21FFFFH 108000H–10FFFFH

BA32 32 KW / 64 KB 200000H—20FFFFH 100000H–107FFFH

BA31 32 KW / 64 KB 1F0000H—1FFFFFH 0F8000H–0FFFFFH

BA30 32 KW / 64 KB 1E0000H—1EFFFFH 0F0000H–0F7FFFH

BA29 32 KW / 64 KB 1D0000H—1DFFFFH 0E8000H–0EFFFFH

BA28 32 KW / 64 KB 1C0000H—1CFFFFH 0E0000H–0E7FFFH

BA27 32 KW / 64 KB 1B0000H—1BFFFFH 0D8000H–0DFFFFH

BA26 32 KW / 64 KB 1A0000H—1AFFFFH 0D0000H–0D7FFFH

BA25 32 KW / 64 KB 190000H—19FFFFH 0C8000H–0CFFFFH

BA24 32 KW / 64 KB 180000H—18FFFFH 0C0000H–0C7FFFH

BA23 32 KW / 64 KB 170000H—17FFFFH 0B8000H–0BFFFFH

BA22 32 KW / 64 KB 160000H—16FFFFH 0B0000H–0B7FFFH

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Bank 2 Bank 2

BA21 32 KW / 64 KB 150000H—15FFFFH 0A8000H–0AFFFFH

BA20 32 KW / 64 KB 140000H—14FFFFH 0A0000H–0A7FFFH

BA19 32 KW / 64 KB 130000H—13FFFFH 098000H–09FFFFH

BA18 32 KW / 64 KB 120000H—12FFFFH 090000H–097FFFH

BA17 32 KW / 64 KB 110000H—11FFFFH 088000H–08FFFFH

BA16 32 KW / 64 KB 100000H—10FFFFH 080000H–087FFFH

BA15 32 KW / 64 KB 0F0000H—0FFFFFH 078000H–07FFFFH

BA14 32 KW / 64 KB 0E0000H—0EFFFFH 070000H–077FFFH

BA13 32 KW / 64 KB 0D0000H—0DFFFFH 068000H–06FFFFH

BA12 32 KW / 64 KB 0C0000H—0CFFFFH 060000H–067FFFH

BA11 32 KW / 64 KB 0B0000H—0BFFFFH 058000H–05FFFFH

BA10 32 KW / 64 KB 0A0000H—0AFFFFH 050000H–057FFFH

BA9 32 KW / 64 KB 090000H—09FFFFH 048000H–04FFFFH

BA8 32 KW / 64 KB 080000H—08FFFFH 040000H–047FFFH

BA7 32 KW / 64 KB 070000H—07FFFFH 038000H–03FFFFH

BA6 32 KW / 64 KB 060000H—06FFFFH 030000H–037FFFH

BA5 32 KW / 64 KB 050000H–05FFFFH 028000H–02FFFFH

BA4 32 KW / 64 KB 040000H–04FFFFH 020000H–027FFFH

BA3 32 KW / 64 KB 030000H–03FFFFH 018000H–01FFFFH

BA2 32 KW / 64 KB 020000H–02FFFFH 010000H–017FFFH

BA1 32 KW / 64 KB 010000H–01FFFFH 008000H–00FFFFH

BA0 32 KW / 64 KB 000000H–00FFFFH 000000H–007FFFH

T3.0 1282

TABLE 3: DUAL-BANK MEMORY ORGANIZATION (CONTINUED) (2 OF 2)

SST34HF3242C/3282 SST34HF3244C/3284 Block Block Size Address Range x8 Address Range x16

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

PIN DESCRIPTION

FIGURE 1: PIN ASSIGNMENTS FOR 56-BALL LFBGA (8MM X 10MM)

FIGURE 2: PIN ASSIGNMENTS FOR 62-BALL LFBGA (8MM X 10MM)

1282 56-lfbga P1.1

A11

WE#

WP#

LBS#

A15

A12

A19

BES2

RST#

UBS#

A13

A20

RY/BY#

A18

A14

A10

A17

A16

DQ6

DQ1

VSS

CIOF

Note*

DQ13

DQ4

DQ3

DQ9

OE#

BEF#

VSS

DQ7

DQ12

VDDS

VDDF

DQ10

DQ0

BES1#

DQ14

DQ5

DQ11

DQ2

DQ8

A B C D E F G H

TOP VIEW (balls facing down)

Note: F7 = DQ15/A-1

1282 62-lfbga P2.1

A20

A16

WEF#

VSSS

WP#

LBS#

A18

A11

RY/BY#

RST#

UBS#

A17

A15

A10

A19

OES#

A14

DQ11

A13

DQ15

DQ13

DQ12

DQ9

BEF#

A12

WES#

DQ6

BES2

DQ10

DQ8

VSSF

DQ14

DQ4

VDDS

DQ2

DQ0

OEF#

DQ7

DQ5

VDDF

DQ3

DQ1

BES1#

A B C D E F G H J K

TOP VIEW (balls facing down)

Note: LSE for SST34HF3244C/3284

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 4: PIN DESCRIPTION

Symbol Pin Name Functions

AMS1 to A0Address Inputs To pr ovide flash address, A20-A0.

To pr ovide (P)SRAM address, AMSS-A0

DQ14-DQ0Data Inputs/Outputs To output data during Read cycles and receive input data during Write cycles.

Data is internally latched during a flash Erase/Program cycle. The outputs are in

tri-state when OE# is high or BES1# is high or BES2 is low and BEF# is high.

DQ15/A-1 Data Input/Output

and LBS Address DQ15 is used as data I/O pin when in x16 mode (CIOF = “1”)

A-1 is used as the LBS address pin when in x8 mode (CIOF = “0”)

BEF# Fl a sh Memory Bank Enab l e To activate the Fla s h me mo ry bank when BEF# is low

BES1# (P)SRAM Memory Bank Enable To activate the (P)SRAM memory bank when BES1# is low

BES2 (P)SRAM Memory Bank Enable To activate the (P)SRAM memory bank when BES2 is high

OEF#2Output Enable To gate the data output buffers for Flash2 only

OES#2Output Enable To gate the data output buffers for SRAM2 only

WEF#2Write Enable To control the Write operations for Flash2 only

WES#2Write Enable To control the Write operations for SRAM2 only

OE# Output Enable To gate the data output buffers

WE# Write En able To control the Write operations

CIOF Byte Selection for Flash When low, select Byte mode. When high, select Word mode.

UBS# Upper Byte Control ((P)SRAM) To enable DQ15-DQ8

LBS# Lower Byte Control ((P)SRAM) To enable DQ7-DQ0

WP# Write Protect To protect and unprotect the bottom 8 KW ord (4 sectors) from Erase or Progr am

operation

RST# Reset To Reset and return the de vice to Read mode

RY/BY# Ready/Busy# To output the status of a Program or Erase Operation

R Y/BY# is a open dr ain output, so a 10KΩ - 100KΩ pull-up resistor is required to

allow RY /BY# to transition high indicating the device is ready to read.

VSSF2Ground Flash2 only

VSSS2Ground SRAM2 only

VSS Ground

VDDFPower Supply (Flash) 2.7-3.3V Power Supply to Flash only

VDDSPower Supply ((P)SRAM) 2.7-3.3V Power Supply to (P)SRAM only

NC No Connection Unconnected pins

T4.0 1282

1. AMSS = Most Significant Address

AMSS = A17 for SST34HF324xC and A18 for SST34HF328x

2. LSE package only

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 5: OPERATIONAL MODES SELECTION FOR X16 (P)SRAM

Mode BEF#1BES1#1,2 BES21,2 OE#2,3 WE#2,3 LBS#2UBS#2

DQ15-8

DQ7-0 CIOF = VIH CIOF = VIL

Full Standby VIH VIH X X X X X HIGH-Z HIGH-Z HIGH-Z

IL XXXX

Output Disable VIH VIL VIH VIH VIH X X HIGH-Z HIGH-Z HIGH-Z

VIL VIH XXV

IH VIH

VIL VIH XV

IH VIH X X HIGH-Z HIGH-Z HIGH-Z

Flash Rea d VIL VIH XV

IL VIH XXD

OUT DOUT DQ14-8 = HIGH-Z

DQ15 = A-1

Flash Write VIL VIH X VIH VIL XXD

IN DIN DQ14-8 = HIGH-Z

DQ15 = A-1

Flash Eras e VIL VIH XV

IH VIL XX X X X

(P)SRAM Read VIH V

IL VIH VIL VIH VIL V

IL DOUT DOUT DOUT

VIH VIL HIGH-Z DOUT DOUT

VIL VIH DOUT HIGH-Z HIGH-Z

(P)SRAM Write VIH VIL VIH XV

IL VIL VIL DIN DIN DIN

VIH VIL HIGH-Z DIN DIN

VIL VIH DIN HIGH-Z HIGH-Z

Product

Identification4VIL VIH V

IL V

IL VIH X X Manufacturer’s ID5

Device ID5

T5.1 1282

1. Do not apply BEF# = VIL, BES1# = VIL and BES2 = VIH at the same time

2. X can be VIL or VIH, but no other value.

3. OE# = OEF# and OES#

WE# = WEF# and WES# for LSE package only

4. Software mode only

5. With A19-A18 = VIL;SST Manufacturer’s ID = BFH, is read with A0=0,

SST34HF32x2x Device ID = 7351H, is read with A0=1

SST34HF32x4x Device ID = 7353H, is read with A0=1

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32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 6: SOFTWARE COMMAND SEQUENCE

Command

Sequence 1st Bus

Write Cycle 2nd Bus

Write Cycle 3rd Bus

Write Cycle 4th Bus

Write Cycle 5th Bus

Write Cycle 6th Bus

Write Cycle

Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2

Word-Program 555H AAH 2AAH 55H 555H A0H WA3Data

Sector-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SAX450H

Block-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H BAX430H

Chip-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H

Erase-Suspend XXXXH B0H

Erase-Resume XXXXH 30H

Query Sec ID5555H AAH 2AAH 55H 555H 88H

User-Security-ID-

Program 555H AAH 2AAH 55H 555H A5H SIWA6Data

User-Security-ID-

Program-Lock-out7555H AAH 2AAH 55H 555H 85H XXH 0000H

Software ID Entry8555H AAH 2AAH 55H BKX9

555H 90H

CFI Query Entry 555H AAH 2AAH 55H BKX4

555H 98H

CFI Query Entry BKX4

55H 98H

Software ID Exit/

CFI Exit/

Sec ID Exit10,11

555H AAH 2AAH 55H 555H F0H

Software ID Exit/

CFI Exit/

Sec ID Exit10,11

XXH F0H

T6.1 1282

1. Address format A10-A0 (He x), Addresses A20-A11 can be VIL or VIH, but no other value , f or the command sequence when in x16 mode.

When in x8 mode, Addresses A20-A12, Address A-1 and DQ14-DQ8 can be VIL or VIH, but no other value, for the command sequence.

2. DQ15-DQ8 can be VIL or VIH, but no other value, for the command sequence

3. WA = Program Word/Byte address

4. SAX for Sector-Erase; uses A20-A11 address lines

BAX for Block-Erase; uses A20-A15 address lines

5. For SST34HF32x2xC/32x4x the Security ID Address Range is:

(x16 mode) = 000000H to 000087H, (x8 mode) = 000000H to 00010FH

SST ID is read at Address Range (x16 mode) = 000000H to 000007H (x8 mode) = 000000H to 00000FH

User ID is read at Address Range (x16 mode) = 000008H to 000087H (x8 mode) = 000010H to 00010FH

Lock Status is read at Address 0000FFH (x16) or 0001FFH (x8). Unlocked: DQ3 = 1 / Locked: DQ3 = 0.

6. SIWA = User Security ID Program Word/Byte address

For SST34HF32x2xC/32x4x, valid Address Range is

(x16 mode) = 000008H-000087H (x8 mode) = 000010H-00010FH.

All 4 cycles of User Security ID Program and Program Lock-out must be completed before going back to Read-Array mode.

7. The User-Security-ID-Program-Lock-out command must be executed in x16 mode. (CIOF = VIH)

8. The device does not remain in Software Product Identification mode if powered down.

9. A19 and A18 = VIL

10. Both Software ID Exit operations are equivalent

11. IIf users never lock after programming, User Sec ID can be programmed over the previously unprogrammed bits (data=1) using the

User Sec ID mode again (the programmed “0” bits cannot be reversed to “1”).

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 7: CFI QUERY IDENTIFICATION STRING1

Address

x16 Mode Address

x8 Mode Data2Description

10H 20H 0051H Query Uniq ue ASCII string “QRY”

11H 22H 0052H

12H 24H 0059H

13H 26H 0002H Primary OEM command set

14H 28H 0000H

15H 2AH 0000H Address for Primary Extended Table

16H 2CH 0000H

17H 2EH 0000H Alternate OEM command set (00H = none exists)

18H 30H 0000H

19H 32H 0000H Address for Alternate OEM extended Table (00H = none exits)

1AH 34H 0000H T7.1 1282

1. Refer to CFI publication 100 for more details.

2. In x8 mode, only the lower byte of data is output.

TABLE 8: SYSTEM INTERFACE INFORMATION

Address

x16 Mode Address

x8 Mode Data1

1. In x8 mode, only the lower byte of data is output.

Description

1BH 36H 0027H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH 38H 0036H VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH 3AH 0000H VPP min (00H = no VPP pin)

1EH 3CH 0000H VPP max (00H = no VPP pin)

1FH 3EH 0004H Ty pical time out for Program 2N µs (24 = 16 µs)

20H 40H 0000H Typical time out for min size buffer program 2N µs (00H = not supported)

21H 42H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)

22H 44H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms)

23H 46H 0001H Maximum time out for Program 2N times typical (21 x 24 = 32 µs)

24H 48H 0000H Maximum time out for b uffer program 2N times typical

25H 4AH 0001H Maximum time out for individual Sector-/Block-Erase 2N times typical (21 x 24 = 32 ms)

26H 4CH 0001H Maximum time out f or Chip-Erase 2N times typical (21 x 26 = 128 ms)

T8.0 1282

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 9: DEVICE GEOMETRY INFORMATION

Address

x16 Mode Address

x8 Mode Data1Description

27H 4EH 0016H Device size = 2N Bytes (16H = 22; 222 = 4 MByte)

28H 50H 0002H Flash Device Interface description; 0002H = x8/x16 asynchronous interface

29H 52H 0000H

2AH 54H 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported)

2BH 56H 0000H

2CH 58H 0002H Number of Erase Sector/Block sizes supp orted by device

2DH 5AH 003FH Block Information (y + 1 = Numb er of blocks; z x 256B = block size)

2EH 5CH 0000H y = 63 + 1 = 64 blocks (003FH = 63)

2FH 5EH 0000H

30H 60H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 25 6)

31H 62H 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size)

32H 64H 0003H y = 1023 + 1 = 1024 sectors (03FFH = 1023)

33H 66H 0010H

34H 68H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) T9.2 1282

1. In x8 mode, only the lower byte of data is output.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD1+0.3V

Transient Voltage (<20 ns) on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD1+1.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C f o r 10 seconds

Output Short Circuit Current3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

1. VDD = VDDF and VDDS

2. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.

Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.

3. Outputs shorted for no more than one second. No more than one output shorted at a time.

OPERATING RANGE

Range Ambient Temp VDD

Commercial 0°C to +70°C 2.7-3.3V

Extended -20°C to +85°C 2.7-3.3V

AC CONDITIONS OF TEST

Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF

See Figures 19 and 20

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 10: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)

Symbol Parameter

Limits

Test ConditionsMin Max Units

IDD1Active VDD Current Address input = VILT/VIHT, at f= 5 MHz,

VDD=VDD Max, all DQs open

Read OE#=VIL, WE#=VIH

Flash 35 mA BEF#=VIL, BES1#=VIH, or BES2=VIL

(P)SRAM 30 mA BEF#=VIH, BES1#=VIL , BES2=VIH

Concurrent Operation 60 mA BEF#=VIH, BES1#=VIL , BES2=VIH

Write2WE#=VIL

Flash 40 mA BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH

(P)SRAM 30 mA BEF#=VIH, BES1#=VIL , BES2=VIH

ISB Standby VDD Current SRAM

PSRAM 30

85 µA

µA VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC

IRT Reset VDD Current 30 µA RST#=GND

ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max

ILIW Input Leakage Current

on WP# pin and RST# pin 10 µA WP#=GND to VDD, VDD=VDD Max

RST#=GND to VDD, VDD=VDD Max

ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.8 V VDD=VDD Min

VILC Input Low Voltag e (CMOS) 0.3 V VDD=VDD Max

VIH Input High Voltage 0.7 VDD VV

DD=VDD Max

VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max

VOLF Flash Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min

VOHF Flash Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min

VOLS (P)SRAM Output Low Voltage 0.4 V IOL =1 mA, VDD=VDD Min

VOHS (P)SRAM Output High Voltage 2.2 V IOH =-500 µA, VDD=VDD Min

T10.0 1282

1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 19)

2. IDD active while Erase or Program is in progress.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 11: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol Parameter Minimum Units

TPU-READ1Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Write Operation 100 µs

T11.0 1282

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 12: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance VI/O = 0V 20 pF

CIN1Input Capacitance VIN = 0V 16 pF

T12.0 1282

TABLE 13: FLASH RELIABILITY CHARACTERISTICS

Symbol Parameter Minimum Specification Units Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T13.0 1282

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

AC CHARACTERISTICS

TABLE 14: (P)SRAM READ CYCLE TIMING PARAMETERS

Min Max Units

TRCS Read Cycle Time 70 ns

TAAS Address Access Time 70 ns

TBES Bank Enable Access Time 70 ns

TOES Output Enable Access Time 35 ns

TBYES UBS#, LBS# Access Time 70 ns

TBLZS1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

BES# to Active Output 0 ns

TOLZS1Output Enable to Active Output 0 ns

TBYLZS1UBS#, LBS# to Active Output 0 ns

TBHZS1BES# to High-Z Output 25 ns

TOHZS1Output Disable to High-Z Output 25 ns

TBYHZS1UBS#, LBS# to High-Z Output 35 ns

TOHS Output Hold from Address Change 10 ns

T14.0 1282

TABLE 15: (P)SRAM WRITE CYCLE TIMING PARAMETERS

Symbol Parameter Min Max Units

TWCS Write Cycle Time 70 ns

TBWS Bank Enable to End-of-Write 60 ns

TAWS Address Valid to End-of-Write 60 ns

TASTS Address Set-up Time 0 ns

TWPS Write Pulse Width 60 ns

TWRS Write Recovery Time 0 ns

TBYWS UBS#, LBS# to End-of-Write 60 ns

TODWS Output Disable from WE# Low 30 ns

TOEWS Output Enable from WE# High 0 ns

TDSS Data Set-up Time 30 ns

TDHS Data Hold from Write Time 0 n s

T15.0 1282

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

TABLE 16: FLASH READ CYCLE TIMING PARAMETERS VDD = 2.7-3.3V

Symbol Parameter Min Max Units

TRC Read Cycle Time 70 ns

TCE Chip Enable Access Time 70 ns

TAA Address Access Time 70 ns

TOE Output Enable Access Time 35 ns

TCLZ1BEF# Low to Active Output 0 ns

TOLZ1OE# Low to Active Output 0 ns

TCHZ1BEF# High to High-Z Output 16 ns

TOHZ1OE# High to High-Z Output 16 ns

TOH1Output Hol d from Address Change 0 ns

TRP1RST# Pulse Width 500 ns

TRHR1RST# High Before Read 50 ns

TRY1,2 RST# Pin Low to Read 20 µs

T16.0 1282

1. This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.

2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-Erase.

TABLE 17: FLASH PROGRAM/ERASE CYCLE TIMING PARAMETERS

Symbol Parameter Min Max Units

TBP Progra m Time 10 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 40 ns

TCS WE# and BEF# Setup Time 0 ns

TCH WE# and BEF# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP BEF# Pulse Width 40 ns

TWP WE# Pulse Width 40 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High 30 ns

TCPH1 BEF# Pulse Width High 30 ns

TDS Data Setup Time 30 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TES Erase-Suspend Latency 10 µs

TBY1,2

2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.

This parameter does not apply to Chip-Erase operations.

RY/BY# Delay Time 90 ns

TBR1Bus Recovery Time 1µs

TSE Sector-Erase 25 ms

TBE Block-Erase 25 ms

TSCE Chip-Erase 50 ms

T17.1 1282

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 3: (P)SRAM READ CYCLE TIMING DIAGRAM

FIGURE 4: (P)SRAM WRITE CYCLE TIMING D IAGRAM (WE# CONTROLLED)1

DDRESSES

AMSS-0

DQ15-0

UBS#, LBS#

OE#

BES1#

BES2

TRCS

TAAS

TBES

TOES

TBLZS

TOLZS

TBYES

TBYLZS TBYHZS

D ATA V ALID

TOHZS

TBHZS

TOHS

1282 F01.

TBES

Note: AMSS = Most Significant Address

AMSS = A17 for SST34HF324xC and A18 for SST34HF328x

TAWS

ADDRESSES

AMSS3-0

BES1#

BES2

WE#

UBS#, LBS#

TWPS TWRS

TWCS

TASTS

TBWS

TBYWS

TODWS TOEWS

TDSS TDHS

1282 F02.

NOTE 2

Q15-8, DQ7-0 VALID DATA IN

Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.

2. If BES1# goes Low or BES2 goes high coincident with or after WE# goes Low, the output will remain at high impedance.

If BES1# goes High or BES2 goes low coincident with or before WE# goes High, the output will remain at high impedance.

Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.

3. AMSS = Most Significant SRAM Address

AMSS = A17 for SST34HF324xC and A18 for SST34HF328x

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 5: (P)SRAM WRITE CYCLE TIMING D IAGRAM (UBS#, LBS# CONTROLLED)1

ADDRESSES

AMSS3-0

WE#

BES1#

BES2

TBWS

TAWS

WCS

TWPS TWRS

TASTS TBYWS

Q15-8, DQ7-0 VALID DATA IN

TDSS TDHS

UBS#, LBS#

1282 F03

NOTE 2 NOTE 2

Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.

2. Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.

3. AMSS = Most Significant SRAM Address

AMSS = A17 for SST34HF324xC and A18 for SST34HF328x

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 6: FLASH READ CYCLE TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = ADDRESS INPUT)

FIGURE 7: FLASH WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = ADDRESS INPUT)

1282 F04.0

DDRESS A20-0

DQ15-0

WE#

OE#

BEF# TCE

TRC TAA

TOE

TOLZ

VIH

HIGH-Z TCLZ TOH TCHZ

HIGH-Z

D ATA V ALIDD ATA V ALID

TOHZ

1282 F05.0

DDRESS A20-0

DQ15-0 TDH

WPH

TDS

TWP

TAH

TAS

TCH

TCS TBY

BEF#

RY/BY#

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

WORD

(ADDR/DATA)

OE#

WE#

TBR

TBP

Note: X can be VIL or VIH, but no other value.

VALID

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 8: FLASH BEF# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = ADDRESS INPUT)

FIGURE 9: FLASH DATA# POLLING TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = ADDRESS INPUT)

VALID

1282 F06.0

DDRESS A20-0

DQ15-0

TDH

CPH

TDS

TCP

TAH

TAS

TCH

TCS

WE#

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

WORD

(ADDR/DATA)

OE#

BEF#

TBP

TBY

RY/BY#

TBR

Note: X can be VIL or VIH, but no other value.

1282 F07

DDRESS A20-0

DQ7DATA DATA# DATA# DATA

WE#

OE#

BEF#

TOEH

TOE

TCE

TOES

RY/BY#

TBY

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 10: FLASH TOGGLE BIT TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = DON’T CARE)

FIGURE 11: FLASH WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = DON’T CARE)

1282 F08.0

DDRESS A20-0

DQ6

WE#

OE#

BEF#

TOE

TOEH

TCE

TWO READ CYCLES

WITH SAME OUTPUTS

VALID DATA

TBR

VALID

TBR

1282 F09.0

DDRESS

A20-0

DQ15-0

WE#

555 2AA 2AA555 555

XX55 XX10XX55XXAA XX80 XXAA

555

OE#

BEF#

SIX-BYTE CODE FOR CHIP-ERASE

TSCE

TWP

TBY

RY/BY#

Note: This device also supports BEF# controlled Chip-Erase operation.

The WE# and BEF# signals are interchangeable as long as minimum timings are met. (See Table 17.)

X can be VIL or VIH, but no other value.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 12: FLASH WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = DON’T CARE)

FIGURE 13: FLASH WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM FOR WORD MODE

(FOR BYTE MODE A-1 = DON’T CARE)

1282 F10.0

DDRESS

A20-0

DQ15-0

WE#

555 2AA 2AA555 555

XX55 XX30XX55XXAA XX80 XXAA

BAX

OE#

BEF#

SIX-BYTE CODE FOR BLOCK-ERASE

TWP

TBY

RY/BY#

VALID

TBR

TBE

Note: This device also supports BEF# controlled Block-Erase operation.

The WE# and BEF# signals are interchangeable as long as minimum timings are met. (See Table 17.)

BAX = Block Address

X can be VIL or VIH, but no other value.

1282 F11.0

DDRESS

A20-0

DQ15-0

WE#

555 2AA 2AA555 555

XX55 XX50XX55XXAA XX80 XXAA

SAX

OE#

BEF#

SIX-BYTE CODE FOR SECTOR-ERASE

TWP

TBY

RY/BY#

VALID

TBR

TSE

Note: This device also supports BEF# controlled Sector-Erase operation.

The WE# and BEF# signals are interchangeable as long as minimum timings are met. (See Table 17.)

SAX = Sector Address

X can be VIL or VIH, but no other value.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 14: FLASH SOFTWARE ID ENTRY AND READ (FOR BYTE MODE A-1 = 0)

FIGURE 15: CFI ENTRY AND READ

1282 F12.0

DDRESS A20-0

TIDA

DQ15-0

WE#

555 2AA 555 0000 0001

OE#

BEF#

Three-Byte Sequence For Software ID Entry

TWP

TWPH TAA

00BF Device ID

XX55XXAA XX90

Note: X can be VIL or VIH, but no other value.

Device ID = 7351H for SST34HF3242C/3282 or 7353H for SST34HF3244C/3284

1282 F22.0

DDRESSES

TIDA

DQ15-0

WE#

555 2AA 555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX98

Note: X can be VIL or VIH, but no other value.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 16: SOFTWARE ID EXIT/CFI EXIT

1282 F23.0

DDRESSES

DQ15-0

TIDA

TWP

TWPH

WE#

555 2AA 555

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

OE#

CE#

XXAA XX55 XXF0

Note: X can be VIL or VIH, but no other value.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 17: RST# TIMING (WHEN NO INTERNAL OPERATION IS IN PROGRESS)

FIGURE 18: RST# TIMING (DURING SECTOR- OR BLOCK-ERASE OPERATION)

1282 F13.0

RY/BY#

RST#

EF#/OE#

TRP

TRHR

1282 F14

Y/BY#

BEF#

OE#

TRP

TRY

TBR

RST#

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 19: AC INPUT/OUTPUT REFERENCE WAVEFORMS

FIGURE 20: A TEST LOAD EXAMPLE

1282 F15.0

REFERENCE POINTS OUTPUTINPUT VIT

IHT

ILT

VOT

A C test inputs are driv en at VIHT (0. 9 VDD) f or a logic “1” and VILT (0.1 VDD) f or a logic “0 ”. Measurement reference points

f or inputs and outputs are VIT (0.5 VDD) and V OT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.

Note: VIT - VINPUT Test

VOT - VOUTPUT Test

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1282 F16.0

T O TESTER

O DUT

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 21: PROGRAM ALGORITHM

1282 F17.0

Start

Load data: XXAAH

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XXA0H

Address: 555H

Load

Address/Data

Wait for end of

Program (TBP,

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

ote: X can be VIL or VIH, but no other valu

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 22: WAIT OPTIONS

1282 F18.0

W ait TBP,

TSCE, TSE

or TBE

Program/Erase

Initiated

Internal Timer Toggle Bit

Yes

Program/Erase

Completed

Does DQ6

match?

Read same

byte/word

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read

byte/word

Is DQ7 =

true data?

Read DQ7

Program/Erase

Initiated

Program/Erase

Initiated

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 23: SOFTWARE PRODUCT ID COMMAND F LOWCHARTS

1282 F19.1

Load data: XXAAH

Address: 555H

oftware Product ID Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX90H

Address: 555H

W ait TIDA

Read Software ID

Load data: XXAAH

Address: 555H

Software ID Exit/

CFI Exit

Command Sequenc

Load data: XX55H

Address: 2AAH

Load data: XXF0H

Address: 555H

W ait TIDA

Return to normal

operation

Note: X can be VIL or VIH, but no other value.

Load data: XXAAH

Address: 555H

CFI Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX98H

Address: 555H

W ait TIDA

Read CFI data

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 24: SOFTWARE SEC ID COMMAND FLOWCHARTS

1282 F20

Sec ID Exit

Command Sequence

Load data: XXF0H

Address: XXH

Return to normal

operation

Wait TIDA

X can be VIL or VIH, but no other value

Load data: XXAAH

Address: 555H

Sec ID Query Entry

ommand Sequence

Load data: XX55H

Address: 2AAH

Load data: XX88H

Address: 555H

W ait TIDA

Read Sec ID

Load data: XXAAH

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XXF0H

Address: 555H

Wait TIDA

Return to normal

operation

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

FIGURE 25: ERASE COMMAND SEQUENCE

1282 F21.0

Load data: XXAAH

Address: 555H

Chip-Erase

ommand Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX10H

Address: 555H

Load data: XXAAH

Address: 555H

W ait TSCE

Chip erased

to FFFFH

Load data: XXAAH

Address: 555H

Sector-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX50H

Address: SAX

Load data: XXAAH

Address: 555H

W ait TSE

Sector erased

to FFFFH

Load data: XXAAH

Address: 555H

Block-Erase

Command Sequenc

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX30H

Address: BAX

Load data: XXAAH

Address: 555H

W ait TBE

Block erased

to FFFFH

Note: X can be VIL or VIH, but no other value.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

PRODUCT ORDERING INFORMATION

Environmental Attribut e

E1 = non-Pb

Package Modifier

P = 56 balls

S = 62 balls

Package Type

L1 = LFBGA (8mm x 10mm x 1.4mm, 0.45mm ba ll size )

L = LFBGA (8mm x 10mm x 1.4mm, 0.40mm ball siz e)

Temperature Range

E = Extended = -20°C to +85°C

Minimum Endurance

4 =10,000 cycles

Read Access Speed

70 = 70 ns

Version

C = x16 Mbit SRAM

blank = x16 PSRAM

Bank Split and Top Boot Block Protection

2 = 4 Mbit + 28 Mbit

4 = 8 Mbit + 24 Mbit

(P)SRAM Dens it y

4 = 4 Mbit

8 = 8 Mbit

Flash Density

32 = 32 Mbit

Voltage

H = 2.7-3.3V

Product Series

34 = Concurrent SuperFlash + (P )SRAM ComboMemory

1. Environmental suffix “E” denotes non-Pb solder.

SST non-Pb solder devices are “RoHS Compliant”.

Device Speed Suffix1 Suffix2

SST34HF32x4X- XXX -XX-XXXX

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

Valid combinations for SST34HF3242C

SST34HF3242C-70-4E-L1P

SST34HF3242C-70-4E-L1PE

Valid combinations for SST34HF3244C

SST34HF3244C-70-4E-L1P

SST34HF3244C-70-4E-L1PE SST34HF3244C-70-4E-LSE

Valid combinations for SST34HF3282

SST34HF3282-70-4E-L1P

SST34HF3282-70-4E-L1PE

Valid combinations for SST34HF3284

SST34HF3284-70-4E-L1P

SST34HF3284-70-4E-L1PE SST34HF3284-70-4E-LSE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations and to determine avai lability of new combinations.

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

PACKAGING DIAGRAMS

56-BALL L OW-PROFILE, FINE-PITCH B ALL GRID ARRAY (LFBGA) 8MM X 10MM

SST PACKAGE C ODE: L1P

H G F E D C B A

A B C D E F G H

SIDE VIEW

SEATING PLANE 0.35 ± 0.05

1.30 ± 0.10

0.12

0.45 ± 0.0

(56X)

0.80

5.60

0.80

5.60

56-lfbga-L1P-8x10-450mic

-4

ote: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.38 mm (± 0.05 mm)

1mm

A1 CORNER

BOTTOM VIEWTOP VIEW

8.00 ± 0.20

A1 CORNER

10.00 ± 0.20

Advance Information

32 Mbit Concurrent SuperFlash + 4/8 Mbit SRAM ComboMemory

SST34HF3242C / SST34HF3244C

SST34HF3282 / SST34HF3284

62-BALL L OW-PROFILE, FINE-PITCH B ALL GRID ARRAY (LFBGA) 8MM X 10MM

SST PACKAGE C ODE: LS

TABLE 18: REVISION HISTORY

Number Description Date

00 •Initial Release Aug 2005

A1 CORNER

K J H G F E D C B A

A B C D E F G H J K

BOTTOM VIEWTOP VIEW

8.00 ± 0.20

0.40 ± 0.0

(62X)

A1 CORNER

10.00 ± 0.20

0.80

5.60

0.80

7.20

62-lfbga-LS-8x10-400mic-

ote: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.32 mm (± 0.05 mm)

1mm

SIDE VIEW

SEATING PLANE 0.32 ± 0.05

1.30 ± 0.10

0.12

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036