Data Sheet 1 of 11 Rev. 03, 2005-06-10
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA211801E
PTFA211801F
Description
The PTFA211801E and PTFA211801F are thermally-enhanced,
180-watt, internally matched GOLDMOS FETs intended for WCDMA
applications. They are characaterized for single- and two-carrier
WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA211801E
Package 30260
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ
= 1.2 A, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average
f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 14.5 15.5 —dB
Drain Efficiency ηD26 27.5 —%
Intermodulation Distortion IMD —–36 –34 dBc
PTFA211801F
Package 31260
Features
•Broadband internal matching
•Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
•Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 180 W
- Efficiency = 52%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
PTFA211801E
PTFA211801F
Data Sheet 2 of 11 Rev. 03, 2005-06-10
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 150 W average, f = 2170 MHz
Characteristic Symbol Min Typ Max Unit
Gain Compression Gcomp —0.5 1.0 dB
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, f = 2140 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —15.5 —dB
Drain Efficiency ηD—38.5 —%
Intermodulation Distortion IMD —–28 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.05 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD565 W
Above 25°C derate by 3.23 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.31 °C/W
PTFA211801E
PTFA211801F
Data Sheet 3 of 11 Rev. 03, 2005-06-10
Two-carrier WCDMA at Various Biases
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46 48
Output Power, Avg. (dBm)
3rd Order IMD (dBc)
1.2 A
1.4 A
1.1 A
1.3 A
VDD = 28 V, f = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
Broadband Performance
VDD = 28 V, IDQ = 1.2 A, POUT = 45.0 dBm CW
5
10
15
20
25
30
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Gain (dB), Efficiency (%)
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return
Loss
Ordering Information
Type Package Outline Package Description Marking
PTFA211801E 30260 Thermally-enhanced slotted flange, single-ended PTFA211801E
PTFA211801F 31260 Thermally-enhanced earless flange, single-ended PTFA211801F
Typical Performance (data taken in a production test fixture)
PTFA211801E
PTFA211801F
Data Sheet 4 of 11 Rev. 03, 2005-06-10
2-Tone Drive-up
VDD = 28 V, IDQ = 1.2 A,
f = 2140 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
38 42 46 50 54
Output Power, PEP (dBm)
0
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
Intermodulation Distortion (dBc)
IM5
IM7
IM3
Efficiency
Typical Performance (cont.)
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V IDQ = 1.2 A, f = 2140 MHz,
POUT = 51 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd Order
5th
7th
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 1.2 A, f = 2170 MHz
13
14
15
16
17
0 20 40 60 80 100 120 140 160 180
Output Power (W)
Gain (dB)
8
21
34
47
60
Drain Efficiency (%)
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1.2 A, f = 2170 MHz
12
13
14
15
16
17
18
0 20 40 60 80 100 120 140 160 180
Output Power (W)
Gain (dB)
0
10
20
30
40
50
60
Gain
Efficiency
PTFA211801E
PTFA211801F
Data Sheet 5 of 11 Rev. 03, 2005-06-10
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1.2 A, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-50
-45
-40
-35
-30
34 36 38 40 42 44 46 48
Average Output Power (dBm)
0
5
10
15
20
25
30
35
Drain Efficiency (%), Gain (dB)
Adjacent Channel Power Ratio (dB)
Efficiency
Gain
ACPR Low
Typical Performance (cont.)
Voltage Sweep
-45
-40
-35
-30
-25
-20
-15
-10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
3rd Order Intermodulation Distortion (dBc)
10
15
20
25
30
35
40
45
IDQ = 1.2 A, f = 2140 MHz, POUT
= 51 dBm PEP,
tone spacing = 1 MHz
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.3 A
0.9 A
1.5 A
2.3 A
4.5 A
6.8 A
9.0 A
11.3 A
13.5 A
PTFA211801E
PTFA211801F
Data Sheet 6 of 11 Rev. 03, 2005-06-10
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2070 7.2 –0.5 1.5 2.3
2110 7.8 –0.2 1.4 2.6
2140 8.4 –0.0 1.4 2.8
2170 9.1 0.0 1.4 3.0
2210 10.0 –0.2 1.3 3.4
See next page for Reference Circuit information
0.1
0.3
0.2
0.1
0
.
0.1
N
E
R
A
T
O
R
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
2210 MHz
2210 MHz
2070 MHz
2070 MHz
Z0 = 50 Ω
Broadband Circuit Impedance
PTFA211801E
PTFA211801F
Data Sheet 7 of 11 Rev. 03, 2005-06-10
A211801ef_sch
8.2pF
1µF
0.5pF
9.1pF 0.02µF 22µF1µF
l1l3l4l6
l8
l9
l10
DUT
C12 C13 C14 C15
C9
C19C18
C17
C16
l11
50V
l7
l2
0.1µF
C6
0.1µF
C5
R6
10µF
35V
C4 5.1KV
R7 .01µF
C7 9.1pF
C8
C10
5.1K V
l5
C11
R8
5.1K V
10
R9
V
1.5pF
C21
8.2pF
l14l12
C20
0.3pF
l13
R5
10V
0.02µF 22µF
50V
9.1pF
R3
2K VR4
2K V
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3KVR1
1.2K V
LM7805
C1
0.001µF
QQ1
Q1 VDD
VDD
RF_OUT
RF_IN
Reference Circuit
Reference Circuit Schematic for f = 2140 MHz
Circuit Assembly Information
DUT PTFA211801E or PTFA211801F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 2140 MHz* Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.097 λ, 50.0 Ω7.37 x 1.40 0.290 x 0.055
l20.267 λ, 50.0 Ω19.86 x 1.40 0.782 x 0.055
l30.136 λ, 42.0 Ω10.24 x 1.85 0.403 x 0.073
l40.087 λ, 42.0 Ω6.50 x 1.85 0.256 x 0.073
l50.018 λ, 11.4 Ω1.24 x 10.24 0.049 x 0.403
l60.077 λ, 6.9 Ω5.23 x 17.78 0.206 x 0.700
l70.207 λ, 48.0 Ω15.70 x 1.50 0.618 x 0.059
l8, l90.256 λ, 45.0 Ω19.30 x 1.65 0.760 x 0.065
l10 0.087 λ, 5.0 Ω5.84 x 25.40 0.230 x 1.000
l11 (taper) 0.073 λ, 5.0 Ω / 40.0 Ω5.59 x 25.40 / 1.98 0.220 x 1.000 / 0.078
l12 0.019 λ, 40.0 Ω1.45 x 1.98 0.057 x 0.078
l13 0.087 λ, 50.0 Ω6.65 x 1.40 0.262 x 0.055
l14 0.403 λ, 50.0 Ω30.73 x 1.40 1.210 x 0.055
*Electrical characteristics are rounded.
PTFA211801E
PTFA211801F
Data Sheet 8 of 11 Rev. 03, 2005-06-10
Reference Circuit (cont.)
Reference Circuit1 (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C6 Capacitor, 0.1 µF Digi-Key PCC104BCT
C7 Capacitor, 0.01 µF ATC 200B103
C8, C12, C16 Ceramic capacitor, 9.1 pF ATC 100B 9R1
C9 Ceramic capacitor, 0.5 pF ATC 100B 0R5
C10, C21 Ceramic capacitor, 8.2 pF ATC 100B 8R2
C11 Ceramic capacitor, 1.5 pF ATC 100B 1R5
C13, C17 Ceramic capacitor, 0.02 µF ATC 200B 203
C14, C18 Ceramic capacitor, 1 µF ATC 920C105
C15, C19 Electrolytic capacitor, 22 µF, 50 VDigi-Key PCE3374CT-ND
C20 Ceramic capacitor, 0.3 pF ATC 100B 0R3
Q1 Transistor Infineon BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R9 Chip resistor, 10 ohms Digi-Key P10ECT-ND
R6, R7, R8 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND
1Gerber Files for this circuit available on request
A211801ef_assy
10
35V
+
LM
RF_IN RF_OUT
PTFA211801E
PTFA211801F
Data Sheet 9 of 11 Rev. 03, 2005-06-10
Package Outline Specifications
Package 30260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
260-cases_30260
0.038 [.0015] -A-
22.35±0.23
[.880±.009]
(2X 4.83±0.50
[.190±.020])
2X 12.70
[.500]
23.37±0.51
[.920±.020]
4X R 1.52
[.060]
2X 3.25
[.128]
1.02
[.040]
27.94
[1.100]
34.04
[1.340]
D
S
G
13.72
[.540]
45° X (2.03
[.080])
SPH 1.57
[.062]
2X 1.63
[.064] R
4.11±0.38
[.162±.015]
[.520 ]
+.004
–.006
LID 13.21+0.10
–0.15
PTFA211801E
PTFA211801F
Data Sheet 10 of 11 Rev. 03, 2005-06-10
Package Outline Specifications (cont.)
Package 31260
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
260-cases_31260
SPH 1.57
[.062]
1.02
[.040]
23.37±0.51
[.920±.020]
2X 12.70
[.500]
45° X 2.031
[.080]
D
G
S
-A-
4.11±0.38
[.162±.015]
22.35±0.23
[.880±.009]
23.11
[.910]
13.72
[.540]
2x 4.83±0.50
[.190±.020]
[.520 +.004 ]
–.006 .
LID 13.21 +0.10
–0.15
0.038 [.0015]
Data Sheet 11 of 11 Rev. 03, 2005-06-10
PTFA211801E/F
Confidential, Limited Internal
Revision History: 2005-06-10, Rev. 03 Data Sheet
Previous Version: 2005-05-02, Data Sheet
Page Subjects (major changes since last revision)
4Add Power Sweep graph for 30 V
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2005-06-10
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International