12TTS08SPbF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A DESCRIPTION/FEATURES 2 Anode The 12TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. 3 Gate Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. VT at 8 A < 1.2 V ITSM 140 A This product has been designed and qualified for industrial level. VRRM 800 V D2PAK 1 Cathode PRODUCT SUMMARY Compliant to RoHS directive 2002/95/EC. Halogen-free according to IEC 61249-2-21 definition. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 13.5 17 A Capacitive input filter TA = 55 C, TJ = 125 C, common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 8 A IT(RMS) 12.5 VRRM/VDRM 800 V 140 A 1.2 V dV/dt 150 V/s dI/dt 100 A/s - 40 to 125 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 C mA 800 800 1.0 ITSM VT TJ 8 A, TJ = 25 C Range VOLTAGE RATINGS PART NUMBER 12TTS08SPbF Document Number: 94499 Revision: 17-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 12TTS08SPbF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t TEST CONDITIONS VALUES 8 TC = 108 C, 180 conduction, half sine wave 12.5 A 10 ms sine pulse, rated VRRM applied, TJ = 125 C 120 10 ms sine pulse, no voltage reapplied, TJ = 125 C 140 10 ms sine pulse, rated VRRM applied, TJ = 125 C 72 10 ms sine pulse, no voltage reapplied, TJ = 125 C 100 1000 A2s 1.2 V 16.2 m 0.87 V Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 C Maximum on-state voltage drop VTM 8 A, TJ = 25 C On-state slope resistance rt Threshold voltage VT(TO) Maximum reverse and direct leakage current IRM/IDM TJ = 125 C TJ = 25 C TJ = 125 C 1.0 mA IH Anode supply = 6 V, resistive load, initial IT = 1 A 30 Maximum latching current IL Anode supply = 6 V, resistive load 50 Maximum rate of rise of off-state voltage dV/dt dI/dt A2s 0.05 VR = Rated VRRM/VDRM Typical holding current Maximum rate of rise of turned-on current UNITS TJ = 25 C 150 V/s 100 A/s VALUES UNITS TRIGGERING PARAMETER SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger IGT VGT VGD IGD W Anode supply = 6 V, resistive load, TJ = - 65 C 20 Anode supply = 6 V, resistive load, TJ = 25 C 15 Anode supply = 6 V, resistive load, TJ = 125 C 10 Anode supply = 6 V, resistive load, TJ = - 65 C 1.2 Anode supply = 6 V, resistive load, TJ = 25 C 1 Anode supply = 6 V, resistive load, TJ = 125 C 0.7 mA V 0.2 TJ = 125 C, VDRM = Rated value 0.1 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time www.vishay.com 2 tq TEST CONDITIONS TJ = 25 C 0.8 3 TJ = 125 C For technical questions, contact: diodestech@vishay.com s 100 Document Number: 94499 Revision: 17-Sep-09 12TTS08SPbF High Voltage Series Phase Control SCR, 8 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation VALUES UNITS - 40 to 125 C 1.5 62 Mounting surface, smooth and greased C/W 0.5 2 g 0.07 oz. 6 (5) kgf cm (lbf in) Approximate weight minimum Mounting torque maximum Marking device Document Number: 94499 Revision: 17-Sep-09 12 (10) Case style D2PAK (SMD-220) For technical questions, contact: diodestech@vishay.com 12TTS08S www.vishay.com 3 12TTS08SPbF High Voltage Series 12TTS08 R thJC (DC) = 1.5 K/ W 120 115 Conduc tion Angle 110 30 60 105 90 120 180 100 0 2 4 6 8 10 Maximum Average On-state Power Loss (W) 125 DC 180 120 90 60 30 12 10 8 RMS Limit 6 4 Conduction Period 2 12TTS08 TJ = 125C 0 0 2 6 8 10 12 14 Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics 125 12TTS08 R thJC(DC) = 1.5 K/ W 120 115 Conduction Period 110 30 60 90 120 105 180 DC 100 0 2 4 6 8 10 12 14 180 120 90 60 30 8 7 6 RMSLimit 5 4 Conduction Angle 3 2 12TTS08 TJ= 125C 1 0 0 1 2 3 4 5 6 7 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 120 Initial TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 110 100 90 80 70 12TTS08 60 1 10 100 8 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) 10 9 130 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics 9 150 140 130 120 110 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated VRRM Reapplied 100 90 80 70 60 12TTS08 50 0.01 Fig. 3 - On-State Power Loss Characteristics 0.1 1 Pulse Train Duration (s) Average On-state Current (A) www.vishay.com 4 4 Average On-state Current (A) Average On-state Current (A) Maximum Average On-state Power Loss (W) 14 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Vishay High Power Products Phase Control SCR, 8 A Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: diodestech@vishay.com Document Number: 94499 Revision: 17-Sep-09 12TTS08SPbF High Voltage Series Phase Control SCR, 8 A Vishay High Power Products Instantaneous On-state Current (A) 1000 12TTS08 100 TJ= 25C 10 TJ= 125C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 12TTS08 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94499 Revision: 17-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 12TTS08SPbF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A ORDERING INFORMATION TABLE Device code 12 T T S 08 S 1 2 3 4 5 6 1 - Current rating (12.5 A) 2 - Circuit configuration: 3 - TRL PbF 7 8 T = Single thyristor Package: T = TO-220AC 4 - Type of silicon: S = Standard recovery rectifier 5 - Voltage rating (08 = 800 V) 6 - S = TO-220 D2PAK (SMD-220) version 7 - None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94499 Revision: 17-Sep-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1