BZV55B2V4 - BZV55B75
Taiwan Semiconductor
1 Version: F1804
500mW, 2% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 75V
● VZ tolerance selection of ± 2%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: Mini-MELF
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 0.03g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ 2.4-75 V
Test current IZT 5 mA
PD 500 mW
VF at IF=100mA 1 V
TJ Max. 175 °C
Package Mini-MELF
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ IF=100mA VF 1 V
Power dissipation PD 500 mW
Junction temperature range TJ -65 to +175 °C
Storage temperature range TSTG -65 to +175 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 300 °C/W
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
2 Version: F1804
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART NUMBER
ZENER VOLTAGE TEST
CURRENT
REGULAR
IMPEDANCE
TEST
CURRENT
LEAKAGE CURRENT
VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
V mA Ω Ω mA µA V
Min. Nom. Max. Max. Max. Max.
BZV55B2V4 2.35 2.4 2.45 5 85 600 1.0 50 1.0
BZV55B2V7 2.65 2.7 2.75 5 85 600 1.0 10 1.0
BZV55B3V0 2.94 3.0 3.06 5 85 600 1.0 4 1.0
BZV55B3V3 3.23 3.3 3.37 5 85 600 1.0 2 1.0
BZV55B3V6 3.53 3.6 3.67 5 85 600 1.0 2 1.0
BZV55B3V9 3.82 3.9 3.98 5 85 600 1.0 2 1.0
BZV55B4V3 4.21 4.3 4.39 5 75 600 1.0 1 1.0
BZV55B4V7 4.61 4.7 4.79 5 60 600 1.0 0.5 1.0
BZV55B5V1 5.00 5.1 5.20 5 35 550 1.0 0.1 1.0
BZV55B5V6 5.49 5.6 5.71 5 25 450 1.0 0.1 1.0
BZV55B6V2 6.08 6.2 6.32 5 10 200 1.0 0.1 2.0
BZV55B6V8 6.66 6.8 6.94 5 8 150 1.0 0.1 3.0
BZV55B7V5 7.35 7.5 7.65 5 7 50 1.0 0.1 5.0
BZV55B8V2 8.04 8.2 8.36 5 7 50 1.0 0.1 6.2
BZV55B9V1 8.92 9.1 9.28 5 10 50 1.0 0.1 6.8
BZV55B10 9.80 10 10.20 5 15 70 1.0 0.1 7.5
BZV55B11 10.78 11 11.22 5 20 70 1.0 0.1 8.2
BZV55B12 11.76 12 12.24 5 20 90 1.0 0.1 9.1
BZV55B13 12.74 13 13.26 5 26 110 1.0 0.1 10
BZV55B15 14.70 15 15.30 5 30 110 1.0 0.1 11
BZV55B16 15.68 16 16.32 5 40 170 1.0 0.1 12
BZV55B18 17.64 18 18.36 5 50 170 1.0 0.1 13
BZV55B20 19.60 20 20.40 5 55 220 1.0 0.1 15
BZV55B22 21.56 22 22.44 5 55 220 1.0 0.1 16
BZV55B24 23.52 24 24.48 5 80 220 1.0 0.1 18
BZV55B27 26.46 27 27.54 5 80 220 1.0 0.1 20
BZV55B30 29.40 30 30.60 5 80 220 1.0 0.1 22
BZV55B33 32.34 33 33.66 5 80 220 1.0 0.1 24
BZV55B36 35.28 36 36.72 5 80 220 1.0 0.1 27
BZV55B39 38.22 39 39.78 2.5 90 500 0.5 0.1 28
BZV55B43 42.14 43 43.86 2.5 90 600 0.5 0.1 32
BZV55B47 46.06 47 47.94 2.5 110 700 0.5 0.1 35
BZV55B51 49.98 51 52.02 2.5 125 700 0.5 0.1 38
BZV55B56 54.88 56 57.12 2.5 135 1000 0.5 0.1 42
BZV55B62 60.76 62 63.24 2.5 150 1000 0.5 0.1 47
BZV55B68 66.64 68 69.36 2.5 160 1000 0.5 0.1 51
BZV55B75 73.50 75 76.50 2.5 170 1000 0.5 0.1 56
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
3 Version: F1804
Notes:
1. The zener voltage (VZ) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK.
PART NO.
(Note 1) PACKAGE PACKING
BZV55Bxxx L0 MINI MELF 10K / 13" Reel
BZV55Bxxx L0G MINI MELF 10K / 13" Reel
BZV55Bxxx L1 MINI MELF 2.5K / 7" Reel
BZV55Bxxx L1G MINI MELF 2.5K / 7" Reel
Notes:
1. "xxx" defines voltage from 2.4V (BZV55B2V4) to 75V (BZV55B75)
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
4 Version: F1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Power Dissipation VS. Ambient
Temperature
Fig. 2 Total Capacitance
Fig. 3 Differential Impedance VS. Zener
Voltage
Fig. 4 Forward Current VS. Forward Voltage
0
100
200
300
400
500
600
0 40 80 120 160 200
1
10
100
1000
0 20 40 60 80
f=1MHz
TA=25oC
VR=2V
V
R
=5V
V
R
=20V
VR=25V
VR=0
0
1
10
100
1000
1 10 100
IZ=1mA
IZ=2mA
IZ=5mA
IZ=10mA
TA=25oC
0.1
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Total Capacitance (pF)
Temperature (
o
C)
VZ - Reverse Voltage (V)
Forward Current (mA)
VF - Forward Voltage (mV)
VZ - Reverse Voltage (V)
PD-Power DIssipation (mW)
Differential Zener Impedance(Ohm)
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
5 Version: F1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
Mini-MELF
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 3.30 3.70 0.130 0.146
B 1.40 1.60 0.055 0.063
C 0.20 0.50 0.008 0.020
DIM. Unit (mm) Unit (inch)
Typ. Typ.
A 1.25 0.049
B 2.00 0.079
C 2.50 0.098
D 5.00 0.197
C
B
A
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
6 Version: F1804
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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