3 V GaAs SPDT Switch
DC - 2 GHz
Rev. V4
MASWSS0179
2
2
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DC-0008093
2
Absolute Maximum Ratings4,5
Parameter Absolute Maximum
Input Power 33 dBm
Operating Voltage 8.5 Volts
Storage Temperature -65°C to +150°C
Operating Temperature -40°C to +85°C
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near these
survivability limits.
Electrical Specifications: TA = +25°C, VC = 0 V / -3 V, Z0 = 50 Ω3
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss DC - 1.0 GHz
1.0 - 2.0 GHz dB — 0.5
0.6
0.7
0.8
Isolation DC - 1.0 GHz
1.0 - 2.0 GHz dB 25
19
28
22 —
VSWR DC - 2.0 GHz Ratio — 1.3:1 —
1 dB Compression
0.5 GHz, Input Power (3 V Control)
0.5 GHz, Input Power (5 V Control)
0.05 GHz, Input Power (3 V Control)
0.05 GHz, Input Power (5 V Control)
dBm —
26
30
16
16
—
TRISE, TFALL 10% to 90% RF, 90% to 10% RF ns — 3 —
TON, TOFF 50% Control to 90% RF, 50% Control to 10% RF ns — 5 —
Transients In-Band mV — 15 —
Input IP2
2-Tone, 5 MHz spacing, 3 V Control, 10 dBm each
0.05 GHz
0.5 GHz
dBm
—
69
80
—
Input IP3
2-Tone, 5 MHz spacing, 3 V Control, 10 dBm each
0.05 GHz
0.5 GHz
dBm
—
48
52
—
Control Current |VC| = 3 V µA — 1 10
3. For positive voltage control, external DC blocking capacitors are required on all RF ports.
Control A Control B RFC to RF1 RFC to RF2
0 1 Off On
1 0 On Off
Truth Table6,7,8
6. For positive voltage control, external DC blocking capacitors
are required on all RF ports.
7. 0 = -8 V to 0 V, 1 = 0 V to +8 V.
8. Differential voltage, V (state 1) - V (state 0), must be +2.8 V
minimum and must not exceed +8 V.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.