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FEATURES
Converts CMOS SRAM into nonvolatile
memory
Unconditionally write-protects SRAM when
VCC is out of tolerance
Automatically switches to battery backup
supply when VCC power failure occurs
Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
Signals low-battery condition on active low
Battery Warning output signal
Automatic VCC power-fail detection for 3.0V
or 3.3V power supplies
Space-saving 8-pin DIP and SOIC packages
Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
Industrial temperature range of -40°C to
+85°C
PIN ASSIGNMENT
PIN DESCRIPTION
VCCI - Power Supply Input
VCCO - SRAM Power Supply Output
VBAT - Backup Battery Input
CEI - Chip Enable Input
CEO - Chip Enable Output
TOL - VCC Tolerance Select
BW - Battery Warning Output
(Open Drain)
RST - Reset Output (Open Drain)
GND - Ground
NC - No Connection
DESCRIPTION
The DS1314 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
DS1314
3V Nonvolatile Controller w ith Li thium
Battery Monitor
www.dalsemi.com
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20
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NC
VCCI
RST
NC
NC
BW
NC
CEO
NC
CEI
NC
VCCO
NC
VBAT
NC
NC
TOL
NC
NC
GND
DS1314E 20-Pin TSSOP
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GND
TOL
VBAT
VCCO VCCI
BW
CEO
CEI
DS1314S-2 8-Pin SOIC
(150-mil)
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GND
TOL
VBAT
VCCO VCCI
BW
CEO
CEI
DS1314 8-Pin DIP
(300-mil)
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VCCO
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VBAT
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TOL
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GND
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VCCI
RST
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BW
CEO
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CEI
DS1314S 16-Pin SOIC
(300-mil)
DS1314
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In addition to battery-backup support, the DS1314 performs the important function of monitoring the
remaining capacity of the lithium battery and providing a warning before the battery reaches end-of-life.
Because the open-circuit voltage of a lithium backup battery remains relatively constant over the majority
of its life, accurate battery monitoring requires loaded-battery voltage measurement. The DS1314
performs such measurement by periodically comparing the voltage of the battery as it supports an internal
resistive load with a carefully selected reference voltage. If the battery voltage falls below the reference
voltage under such conditions, the battery will soon reach end-of-life. As a result, the Battery Warning
pin is activated to signal the need for battery replacement.
MEMO RY BACKUP
The DS1314 performs all the circuit functions required to provide battery-backup for an SRAM. First, the
device provides a switch to direct power from the battery or the system power supply (VCCI). Whenever
VCCI is less than the switch point VSW and VCCI is less than the battery voltage VBAT, the battery is
switched in to provide backup power to the SRAM. This switch has voltage drop of less than 0.2 volts.
Second, the DS1314 handles power failure detection and SRAM write protection. VCCI is constantly
monitored, and when the supply goes out of tolerance, a precision comparator detects power failure and
inhibits chip enable output ( CEO ) in order to write-protect the SRAM. This is accomplished by holding
CEO to within 0.2 volts of VCCO when VCCI is out of tolerance. If CEI is (active) low at the time that
power failure is detected, the CEO signal is kept low until CEI is brought high again. Once CEI is
brought high, CEO is taken high and held high until after VCCI has returned to its nominal voltage level. If
CEI is not brought high by 1.5 µs after power failure is detected, CEO is forced high at that time. This
specific scheme for delaying write protection for up to 1.5 µs guarantees that any memory access in
progress when power failure occurs will complete properly. Power failure detection occurs at 3.0V
nominal (3.3V supply) when the TOL pin is wired to GND or at 2.7V nominal (3.0V supply) when TOL
is connected to VCCO.
BATTERY VOLTAGE MONITORING
The DS1314 automatically performs periodic battery voltage monitoring at a factory-programmed time
interval of 24 hours. Such monitoring begins within tREC after VCCI rises above VCCTP, and is suspended
when power failure occurs.
After each 24-hour period (tBTCN) has elapsed, the DS1314 connects VBAT to an internal 1.2 MΩ=test
resistor (RINT) for one second (tBTPW). During this one second, if VBAT falls below the factory-
programmed battery voltage trip point (VBTP), the battery warning output BW is asserted. While BW is
active battery testing will be performed with period tBTCW to detect battery removal and replacement.
Once asserted, BW remains active until the battery is physically removed and replaced by a fresh cell.
The battery is still re-tested after each VCC power-up, however, even if BW was active on power-down. If
the battery is found to be higher than VBTP during such testing, BW is deasserted and regular 24-hour
testing resumes. BW has an open-drain output driver.
Battery replacement following BW activation is normally done with VCCI nominal so that SRAM data is
not lost. During battery replacement, the minimum time duration between old battery detachment and
new battery attachment (tBDBA) must be met or BW will not deactivate following attachment of the new
battery. Should BW not deactivate for this reason, the new battery can be detached for tBDBA and then re-
attached to clear BW .
DS1314
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NOTE: The DS1314 cannot constantly monitor an attached battery because such monitoring would
drastically reduce the life of the battery. As a result, the DS1314 only tests the battery for one second out
of every 24 hours and does not monitor the battery in any way between tests. If a good battery (one that
has not been previously flagged with BW ) is removed between battery tests, the DS1314 may not
immediately sense the removal and may not activate BW until the next scheduled battery test. If a battery
is then reattached to the DS1314, the battery may not be tested until the next scheduled test.
NOTE: Battery monitoring is only a useful technique when testing can be done regularly over the entire
life of a lithium battery. Because the DS1314 only performs battery monitoring when VCC is nominal,
systems which are powered-down for excessively long periods can completely drain their lithium cells
without receiving any advanced warning. To prevent such an occurrence, systems using the DS1314
battery monitoring feature should be powered-up periodically (at least once every few months) in order to
perform battery testing. Furthermore, anytime BW is activated on the first battery test after a power-up,
data integrity should be checked via checksum or other technique.
POWER MONITORING
DS1314S and DS1314E varieties have an additional reset pin. These varieties detect out-of-tolerance
power supply conditions and warn a processor-based system of impending power failure. When VCCI falls
below the trip point level defined by the TOL pin (VCCTP), the VCCI comparator activates the reset signal
RST . Reset occurs at 3.0V nominal (3.3V supply) when the TOL pin is connected to GND or at 2.7V
nominal (3.0V supply) when TOL is connected to VCCO.
RST also serves as a power-on reset during power-up. After VCCI exceeds VCCTP, RST will be held active
for 200 ms nominal (tRPU). This reset period is sufficiently long to prevent system operation during
power-on transients and to allow tREC to expire. RST has an open-drain output driver.
FRESHNESS SEAL MODE
When the battery is first attached to the DS1314 without VCC power applied, the device does not
immediately provide battery-backup power on VCCO. Only after VCCI exceeds VCCTP and later falls below
both VSW and VBAT will the DS1314 leave Freshness Seal Mode and provide battery-backup power. This
mode allows a battery to be attached during manufacturing but not used until after the system has been
activated for the first time. As a result, no battery energy is drained during storage and shipping.
DS1314
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FUNCTIONAL BLOCK DIAGRAM Figure 1
DS1314
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ABSOLUTE MAXIMUM RA TINGS*
Voltage on Any Pin Relative to Ground -0.5V to +7.0V
Operating Temperature -40°C to +85°C
Storage Temperature -55°C to +125°C
Soldering Temperature 260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (-40°C to +85°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Supply Voltage TOL=GND VCCI 3.0 3.3 3.6 V 1
Supply Voltage TOL=VCCO VCCI 2.7 3.0 3.3 V 1
Battery Supply Voltage VBAT 2.0 6.0 V 1
Logic 1 Input VIH 2.0 VCCI+0.3 V 1, 12
Logic 0 Input VIL -0.3 +0.8 V 1, 12
DC ELECTRICAL CHARACTERISTI CS (-40°C to +85°C; VCCI = ≥VCCTP)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Operating Current (TTL inputs) ICC1 50 200 µA 2
Operating Current (CMOS inputs) ICC2 30 100 µA 2, 5
RAM Supply Current
(VCCO ≥ VCCI -0.2V)
VCC1 80 mA 3
RAM Supply Current
(VCCO ≥ VCCI -0.3V)
ICCO1 140 mA 4
VCC Trip Point (TOL=GND) VCCTP 2.8 2.9 3.0 V 1
VCC Trip Point (TOL=VCCO)V
CCTP 2.5 2.6 2.7 V 1
VBAT Trip Point VBTP 2.5 2.6 2.7 V 1
VCC/VBAT Switch Point
(TOL=GND)
VSW 2.6 2.7 2.8 V 1
VCC/VBAT Switch Point
(TOL= VCCO)
VSW 2.4 2.5 2.6 V 1
Output Current @ 2.2V IOH -1 mA 7, 10
Output Current @ 0.4V IOL 4 mA 7, 10
Input Leakage IIL -1.0 +1.0 µA
Output Leakage ILO -1.0 +1.0 µA
Battery Monitoring Test Load RINT 0.8 1.2 1.5 MΩ
DC ELECTRICAL CHARACTERISTI CS (-40°C to +85°C; VCCI < VBAT; VCCI < VSW)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Battery Current IBAT 100 nA 2
Battery-Backup Current ICCO2 500 µA 6
Supply Voltage VCCO VBAT-0.2 V1
CEO Output VOHL VBAT-0.2 V 1, 8
DS1314
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CAPACITANCE (tA =25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance ( CEI , TOL) CIN 7pF
Output Capacitance
(CEO ,BW ,RST )
COUT 7pF
AC EL ECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI ≥ VCCTP)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
CEI to CEO Propagation Delay tPD 12 20 ns
CE Pulse Width tCE 1.5 µs 11
VCC Valid to End of
Write Protection
tREC 12 125 ms 9
VCC Valid to CEI Inactive tPU 2ms
VCC Valid to RST Inactive tRPU 150 200 350 ms 10
VCC Valid to BW Valid tBPU 1s10
AC EL ECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VCCTP)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
VCC Slew Rate tF150 µs
VCC Fail Detect to RST Active tRPD 515µs10
VCC Slew Rate tR150 µs
AC EL ECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI ≥ VCCTP)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Battery Test to BW Active tBW 1s10
Battery Test Cycle-Normal tBTCN 24 hr
Battery Test Cycle-Warning tBTCW 5s
Battery Test Pulse Width tBTPW 1s
Battery Detach to Battery Attach tBDBA 7s
Battery Attach to BW Inactive tBABW 1s10
DS1314
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TIMING DI AGRAM: POWER-UP
NOTE:
If VBAT < VSW, VCCO will begin to slew with VCCI when VCCI = VBAT.
DS1314
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TIMING DI AGRAM: POWER-DOWN
NOTE:
If VBAT < VSW, VCCO will slew down with VCCI until VCCI = VBAT.
DS1314
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TIMING DI AGRAM: BATTERY WARNING DETECTION
NOTE:
tBW is measured from the expiration of the internal timer to the activation of the battery warning output
BW .
TIMING DIAGRAM: BATTERY REPLACEMENT
DS1314
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NOTES:
1. All voltages referenced to ground.
2. Measured with outputs open circuited.
3. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥
VCCI -0.2V.
4. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥
VCCI -0.3V.
5. All inputs within 0.3V of ground or VCCI.
6. ICCO2 is the maximum average load current which the DS1314 can supply to the memories in the
battery-backup mode.
7. Measured with a load as shown in Figure 2.
8. Chip Enable Output CEO can only sustain leakage current in the battery-backup mode.
9. CEO will be held high for a time equal to tREC after VCCI crosses VCCTP on power-up.
10. BW and RST are open drain outputs and as such cannot source current. External pull-up resistors
should be connected to these pins for proper operation. Both BW and RST can sink 10 mA.
11. tCE maximum must be met to ensure data integrity on power-down.
12. In battery-backup mode, inputs must never be below ground or above VCCO.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: See below
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
OUTPUT LOAD Figure 2
* INCLUDING SCOPE AND JIG CAPACITANCE
DS1314
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DATA SHEET REVISION SUMMARY
The following represent the key differences between 12/16/96 and 06/12/97 version of the DS1314 data
sheet. Please review this summary carefully.
1. Changed VBAT max to 6V.
2. Changed VCCTP values to 2.8 - 3.0V (TOL = GND) and 2.5 - 2.7V (TOL = VCC).
3. Changed tBABW from 7s to 1s max.
4. Changed block diagram to show U L compliance.
The following represent the key differences between 06/12/97 and 08/29/97 version of the DS1314 data
sheet. Please review this summary carefully.
1. Changed AC test conditions.
2. Changed tPD to 20 max & 12 typ.
The following represent the key differences between 08/29/97 and 12/16/97 version of the DS1314 data
sheet. Please review this summary carefully.
1. Changed VCCI mins from 3.05V to 3.0V (TOL=GND) and from 275V to 2.7V (TOL=VCCD) (this
should have been done on 06/12/97 revision but was overlooked).
2. Specified Input Capacitance as being only for CEI , TOL and Output Capacitance as being only for
CEO , BW and RST . This is not a change but rather clarification.
3. Removed “preliminary” from title bar.
