V
RRM
= 400 V - 1800 V
I
F
=165 A
Features
• High Surge Capability DO-8 Package
• Types up to 1800 V V
RRM
• Equivalent to SKR130 Series
• Not ESD Sensitive
GKR
Parameter Symbol GKR130/04 GKR130/08 GKR130/16GKR130/1
Unit
Re
etitive
eak reverse volta
eV
RRM
400 800 1600 1800 V
Conditions
GKR130/04 thru GKR130/18
GKR130/14
1200
GKR130/12
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GKN has leads reversed)
Silicon Standard
Recover
Diode
1400
1
2
2
1
DC blocking voltage V
DC
400 800 1600 1800 V
Continuous forward current I
F
165 165 165 165 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbo
GKR130/04 GKR130/08 GKR130/16GKR130/1
Unit
Diode forward voltage 1.5 1.5 1.5 1.5
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.35 0.35 0.35 0.35 K/W
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
2500
V
F
2500 2500
-55 to 150
A2500
1.5
GKR130/14GKR130/12
1.5
T
C
= 25 °C, t
p
= 10 m
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
2500 2500
-55 to 150
165 165
-55 to 150 -55 to 150
14001200
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
22 22 mA22
0.35 0.35
Reverse current I
R
R
= V
RRM
, T
j
= 180 °
22 22 22
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1