MCMA140P1800TA
3 1 2
6 57 4
Phase leg
Thyristor Module
Part number
MCMA140P1800TA
Backside: isolated
TAV
T
V V1.28
RRM
140
1800
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191111dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCMA140P1800TA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.29
R0.22 K/W
min.
140
VV
100T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
520 WT = 25°C
C
150
1800
forward voltage drop
total power dissipation
Conditions
1.63
T = 25°C
VJ
140
V
T0
V0.85T = °C
VJ
140
r
T
2.8 mΩ
V1.28T = °C
VJ
I = A
T
V
150
1.70
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1800T = 25°C
VJ
IA220
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
140
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
119
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
2.40
2.59
20.8
20.2
kA
kA
kA
kA
2.04
2.21
28.8
27.9
1800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
450 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
200 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
185 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 150 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 150 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.2
IXYS reserves the right to change limits, conditions and dimensions. 20191111dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCMA140P1800TA
Ratings
C
M
M
A
140
P
1800
TA
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
TO-240AA-1B
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C140
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
125-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCMA140P1800TA 512880Box 36MCMA140P1800TAStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
1.6
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
140
IXYS reserves the right to change limits, conditions and dimensions. 20191111dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCMA140P1800TA
3 1 2
6 57 4
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20191111dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCMA140P1800TA
0 40 80 120 160
0
40
80
120
160
200
0.01 0.1 1
800
1200
1600
20
0
0
0.5 1.0 1.5 2.0
0
50
100
150
200
250
3
00
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
0.20
0.24
I
T
[
A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
3
10
4
10
5
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
= 0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at
case temperature
Fig. 8 Transient thermal impedance junction to case
Fig. 5 Gate controlled delay time t
gd
0 40 80 120 160
0
50
100
150
200
250
I
T(AV)
[A]
P
tot
[
W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 40 80 120 160
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 140°C
T
VJ
= 140°C
i R
thi
(K/W) t
i
(s)
1 0.0073 0.0001
2 0.0128 0.0031
3 0.1329 0.084
4 0.067 0.42
T
VJ
= 125°C
140°C
R
thHA
0.1
0.2
0.4
0.6
0.8
1.0
I
G
[mA]
1 10 100 1000 10000
0.1
1
10
V
G
[V]
1: I
GT
, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 140°C
3
4
2
1
56
10 100 1000
1
10
100
1000
I
G
[mA]
T
VJ
= 25°C
t
gd
[µs]
typ. Limit
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191111dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved