FUJITSU MICROELECTRONICS
DATA SHEET
Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.12
ASSP
Spread Spectrum Clock Generator
MB88182
DESCRIPTION
MB88182 is the multi-output clock generator for EMI (Electro Magnetic Interference) reduction. The peak of
unnecessary radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate
periodically with the internal modulator.
It is possible to set the frequency in the built-in register using the I2C bus that can vary depending on the application.
FEATURES
Built-in PLL : 3
Without spread-spectrum function : 1 (PLL)
With spread-spectrum function : 2 (SSCG1, SSCG2)
Clock output pins : 5 pins
CLK1 : Clock output when setting to CLK1 (PLL).
CLK2 : Clock output when setting to CLK2 (SSCG1) .
CLK3 : Clock output when setting to CLK3 (SSCG2) .
CLK4 : Clock output when setting to CLK4 (SSCG2) .
Note: It is not possible to output CLK3 and CLK4 at the same time.
CKREF : Buffered output for CKIN clock.
Power down pin s : 5 pins
XPD1 : Control the stop state of PLL and the CLK1 output.
XPD2 : Control the stop state of SSCG1 and the CLK2 output.
XPD3 : Control the stop state of the CLK3 output.
XPD4 : Control the stop state of the CLK4 output.
Note: Halting both CLK3 and CLK4 stops o perating the SSCG2.
XPDREF: Control the stop state of the CKREF output. (Continued)
DS04-29138-3E
MB88182
2DS04-29138-3E
(Continued)
Modulation enable pins : ENS
Switch on and off for the modulation (For SSCG1, SSCG2)
Function to set the output cloc k frequency
This has the slave transfer function fo r the I2C bus, and can set the output frequency of CLK1 (when setting
to CLK1), CLK2 (when setting to CLK2), CLK3 (when setting to CLK3) and CLK4 (when setting to CLK4) from
the outside.
Also, it is possible to set the output drive ability of CLK1, CLK2, CLK3 and CLK4.
Output frequency* : 8 MHz to 100 MHz, internal oscillation frequency : 16 MHz to 168 MHz
*: When VDP is 1.8 V ± 0.15 V, the frequency range to output is 8 MHz to 50 MHz.
Programmable of the parameter of N divider, M divider, K divider
Setting to CLK1 : N divider : 5-bit, M divider : 6-bit, K divider : 5-bit
Setting to CLK2, 3, 4 : N divider : 11-bit, M divider : 12-bit, K divider : 5-bit
Modulation rate : Selectable from no modulation, ± 0.25%, ± 0.5%, ± 0.75%, ± 1.0%, ± 1.25%, ± 1.5% and ± 1.75%.
Input clock 10 MHz to 30 MHz
Power supply voltage: 1.8 V ± 0.15 V (VDD), 2.6 V ± 0.1 V (VDDE), 1.65 V to 2.7 V (VDP)
Operating temperature: 40 °C to + 85 °C
Power consumption: At operation 18 mW (Power supply voltage:1.8 V (VDD),
2.6 V (VDDE, VDP) normal temperature, no load,
CKREF(19.2 MHz), CLK1 (48 MHz, 1.8 V), CLK2 (27 MHz),
CLK3 (37 MHz) during the clock output)
During the power down state for all outputs
0.01 mW (Power supply voltage: 1.8 V (VDD) ,
2.6 V (VDDE, VDP), normal temperature)
Cycle-Cycle Jitter : Less than 100 ps-rms
Package : BCC20 (3.50 mm × 3. 50 mm, Lead pitch 0. 50 mm, Mounting height 0.60 mm)
QFN24 (2.50 mm × 3.50 mm, Lead pitch 0.40 mm, Mounting height 0.80 mm)
PRODUCT LINEUP
MB88182 has the following lineups corresponding to the different voltages of CLK1 pin and I2C addresses.
Part number CLK1 CLK2 CLK3/CLK4/CKREF I2C address
BCC20 package QFN24 package
MB881821APVA1 MB881821AWQN 1.8 V
2.6 V VDP level
(1.8 V / 2.6 V)
1001111B
MB881822APVA1 MB881822AWQN 2.6 V
MB881821BPVA1 MB881821BWQN 1.8 V 1011111B
MB881822BPVA1 MB881822BWQN 2.6 V
MB88182
DS04-29138-3E 3
PIN ASSIGNMENT
BCC20
(TOP VIEW)
(LCC-20P-M06)
4
3
2
5
6
16
9
810
1920 18
14
15
13
12
VDP
CKREF
CKIN
VSS
VDD
CLK1
XPDREF
XPD1
SDA
SCL
ENS
VDDE
VSS
CLK2
XPD4
XPD3
XPD2
CLK3
CLK4
VSS
1
7
17
11
MB88182
4DS04-29138-3E
•QFN24
(TOP VIEW)
(LCC-24P-M61)
1
2
3
4
5
6
789 101112
24 2322 21 20
19
18
17
16
15
14
13
XPDREF
SCL
SDA
XPD1
XPD2
VDP
VSS
CLK4
VSS
CLK3
VSS
XPD3
XPD4
CLK2
VSS
VDDE
ENS
VSS
CLK1
VDD
VSS
CKIN
CKREF
NC
MB88182
DS04-29138-3E 5
PIN DESCRIPTION
Pin name I/O Pin no. Description
BCC20 QFN24
VDP 1 12 Power supply pin (2.6 V / 1.8 V)
NC ⎯⎯ 13 NC pin
CKREF O 2 14 Reference clock output pin
CKIN I 3 15 Clock input pin (19.2 MHz)
VSS 416GND pin
VDD 5 17 Power supply pin (1.8 V)
CLK1 O 6 18 Clock output pin 1
VSS ⎯⎯ 19 GND pin
XPDREF I 7 20 CKREF Power down pin
SCL I 8 21 I2C bus clock input pin
SDA I/O 9 22 I2C bus data I/O pin
XPD1 I 10 23 CLK1 Power down pin
XPD2 I 11 24 CLK2 Po wer down pin
VSS ⎯⎯ 1GND pin
XPD3 I 12 2 CLK3 Power down pin
XPD4 I 13 3 CLK4 Power down pin
CLK2 O 14 4 Clock output pin 2
VSS 15 5 GND pin
VDDE 16 6 Power supply pin (2.6 V)
ENS I 17 7 Modulation enable pin
CLK3 O 18 8 Clock output pin 3
VSS ⎯⎯ 9GND pin
CLK4 O 19 10 Clock output pin 4
VSS 20 11 GND pin
MB88182
6DS04-29138-3E
I/O CIRCUIT TYPE
(Continued)
Pin Circuit type Remarks
XPDREF
XPD1
XPD2
XPD3
XPD4
CMOS hysteresis input
With pull-up resistor (20 kΩ)
The pull-up resistor is cut off during
the “L” input.
ENS CMOS hysteresis input
SCL CMOS hysteresis input
SDA CMOS hysteresis input
N-ch open drain output
•I
OL = 4 mA
2.6 V
2.6 V
MB88182
DS04-29138-3E 7
(Continued)
Pin Circuit type Remarks
CKIN Feedback resistors 1 MΩ
Possible to input clock via the cou-
pling capacity
CLK1 CMOS output
•I
OH = 2 mA or 4 mA
•I
OL = 2 mA or 4 mA
(Switchable by the output drive
ability setting bit)
Operates at 1.8 v or 2.6 v depending
on the part number.
CLK2 CMOS output
•I
OH = 2 mA or 4 mA
•I
OL = 2 mA or 4 mA
(Switchable by the output drive
ability setting bit)
CLK3
CLK4 CMOS output
•At VDP = 2.6 V ± 0.1 V
IOH = 2 mA or 4 mA
IOL = 2 mA or 4 mA
(Switchable by the output drive
ability setting bit)
•At VDP = 1.8 V ± 0.15 V
IOH = 1 mA or 2 mA
IOL = 1 mA or 2 mA
1.8 V 1 MΩ
1.8 V
or
2.6 V
2.6 V
VDP
MB88182
8DS04-29138-3E
(Continued)
Pin Circuit type Remarks
CKREF CMOS output
•At VDP = 2.6 V ± 0.1 V
IOH = 2 mA
IOL = 2 mA
•At VDP = 1.8 V ± 0.15 V
IOH = 1 mA
IOL = 1 mA
VDP
MB88182
DS04-29138-3E 9
HANDLING DEVICES
(1) Preventing lat ch-u p
A latch-up may occur in a CMOS IC if a voltage greater than power supply voltage or a voltage less than GND
is applied to an input or out put pin, or if an above-rating voltage is applied between power supply and GND.
A latch-up, if it occurs, significantly in creases the power-supply curre nt and may cause therm al destruction of
an element. When you use a CMOS IC, be very careful not to exceed the absolute maximum rating.
(2) Handling control input pins
The input pins (ENS, XPD1, XPD2, XPD3, XPD4, and XPDREF) of this device should be high or low level
pre ve nting the pins from being undefin ed by connecting a pull-down or pull-up resist or , or perf orming lev el input
by control signals.
The wait time for clock stabilization is needed after turning the power on or when changing the setting of ENS
pin or po wer down con trol pins (XPD1, XPD2, XPD3, XPD4, and XPDREF ). Please use the cloc k after the loc k-
up time has passed. (The loc k-up time varies depending on the setting value to the respective register. Please
confirm the recommended value with the Fujitsu Microelectronics support tool.)
(3) Power supply pins
Ensure that the impedance of the connection from the power supply source to the power supply pins on the
device is as low as possible.
We recommen d co nnec ting t he e lectr olytic ca pac itor ( abo ut 10 μF ) and the ceram ic capacitor (about 0. 01 μF)
in parallel between power supply and GND near the device, as a bypass capacit or.
We also recommend inserting a low pass filter less than 3.4 kHz of a cutoff frequency to the power-supply line
of MB88182 for not being affected by the power-supply noise on the customer's system.
The supply v oltage to MB88182 is decr eased when a resist or is inserted; theref ore , please use the resisto r less
than 10 Ω in case of inserting a resistor. (An example of recommended combina tion is 4.7 μF f o r a capacitance
and 10 Ω for a resisto r.)
Example of recommended circuit of low pass filter to remove power-supply noise
MB88182
VCC
4.7 μF
10 Ω
0.1 μF
(Power supply line)
(Bypass capacitor)
MB88182
10 DS04-29138-3E
BLOCK DIAGRAM
SSCG2
XPD4
XPD3
SSCG1
XPD2
SCL
SDA
CLK4
CLK3
CLK2
PLL
XPD1 CLK1
CKIN
XPDREF
CKREF
ENS
Power down control
Setting to CLK4
Setting to CLK3
Setting to CLK2
Setting to CLK1
Oscillates when setting to the
enable side
I2C circuit
MB88182
DS04-29138-3E 11
PIN SETTING
ENS Modulation enable setting
When setting “0” to the ENS pin, the spectrum will not spread.
The setting is for CLK2 (SSCG1) and CLK3, and CLK4 (SSCG2).
XPD Power down setting
The pin in XPDREF, XPD1, XPD2, XPD3 and XPD4 is connected to t he pull-up resistor.
However, the pull-up resistor is cut off during “0” input.
When both XPD3 and XPD4 are “0”, SSCG2 is in the power do wn state.
ENS Modulation
0 No modulation
1 (2.6 V) Modulation
XPDREF 0 CKREF is fixed to the output “L” .
1 (2.6 V) CKREF is the clock output.
XPD1 0PLL1 is in the power down state.
CLK1 is fixed to the output “L”.
1 (2.6 V) PLL1 and CLK1 are in operation.
XPD2 0SSCG1 is in the power down state.
CLK2 is fixed to the output “L”.
1 (2.6 V) SSCG1 and CLK2 are in operation.
XPD3 0 CLK3 is fixed to the output “L”.
1 (2.6 V) SSCG2 and CLK3 are in operation.
XPD4 0 CLK4 is fixed to the output “L”.
1 (2.6 V) SSCG2 and CLK4 are in operation.
MB88182
12 DS04-29138-3E
SETTING REGISTER
<Memory map >
Setting regist er for CLK2, CLK3, CLK4 (All registers have the same configurations.)
CLK1 setting register
Note: The bit's initial value in a register is undefined. Therefore, if the power down of clock output is released before
the register setting, the clock is output with settings unintended. The power down of the clock output for
CLK1, CLK2, CLK3 and CLK4 should be released after setting to registers.
Address Function Remarks
bit0 to 11 M divider setting (12-bit ) Selectable in the range of 100 to 3600
bit12 to 22 N divider setting (11-bit) Selectable in the range of 3 to 2047
bit23 to 27 K divider setting (5-bit) Selectable in the range of 1 to 32
bit28 to 30 L divider setting (3-bit) Modulation freq uency setting (selectable in the range of 1 to 8)
bit31 to 34 Charge Pump setting (4-bit) Charge pump current setting due to internal oscillation frequency
and M divider sett ing
bit35 to 40 VCO Gain setting (6-bit) Gain setting due to internal oscillation frequency
bit41 to 43 Modulation rate setting
(3-bit) modulation off, ± 0.25%, ± 0.50%, ± 0.75%, ± 1.00%,
± 1.25%, ± 1.50%, ± 1.75% are selectable
bit44 Output drive setting 0 : Ability small, 1 : Ability large
bit45 Slewing rate se tting 0 : Slewing rate low, 1 : Slewing rate high
bit46, 47 Invalid bit When in writing : The written data is ignored.
When in readin g : Und ef ine d
Address Function Remarks
bit0 to 5 M divider setting (6-bit) Selectable in the range of 3 to 52
bit6 to 10 N divider setting (5-bit) Selectable in the range of 3 to 31
bit11 to 15 K divider setting (5-bit) Selectable in the range of 1 to 32
bit16 to 19 Charge Pump setting ( 4-bit) Charge pump current setting due to internal oscillation frequency
and M divider settin g
bit20 to 25 VCO Gain setting (6-bit) Gain setting due to internal os cillation frequency
bit26 Output drive setting 0 : Ability small, 1 : Ability large
bit27 Slewing rate setting 0 : Slewing rate low, 1 : Slewing rate high
bit28 to 31 Invalid bit When in writing : The written data is ignored.
When in reading : Undefined
MB88182
DS04-29138-3E 13
<Frequency se tting>
When setting each divider parameter of the oscillator to a register, the output frequency can be set.
Internal oscillation frequency and output frequency can be calculated with fo llowing formula:
Internal oscillation frequency (fvco*) = Input frequency (fin) × M/N
* : Please set the fvco range from 16 MHz to 168 MHz.
Output frequency (fout*) = fvco/K
* : Please set th e fout range from 8 MHz to 100 MHz.
Set the output frequency to 8 MHz to 50 MHz for CLK3 and CLK4 setting registers when VDP is 1.8 V ± 0.15 V.
(Setting example)
fin : 19.2 MHz, fout : 29.6 MHz
M divider par ameter : 22 2 ( = 0DEH) , N divider par a meter : 1 44 ( = 090H) , K divider parameter : 1 ( = 01H)
(19.2 × 222 / 144) / 1 = 29.6 (MHz) (fvco : 19.2 × 222 / 144 = 29.6 (MH z) )
Note: The recommended setting value of the VCO gain and the M divider depends on the internal oscillation
frequency.
Also, the recommended setting value of the Charge Pump depends o n the setting values of the VCO gain
and the M divider. Please confirm the recommended value with the Fujitsu Microelectronics support tool.
Contact the sales representatives for details on the support tools.
<Modulation frequency setting>
Modulation frequency can be set by writing L divider parameter to the register.
The average of modulation frequen cy can be calculated with following formula:
(Setting example) fin : 19.2 MHz, average of modulation freq. 19.2 / (266 × 6) × 1000 = Approximately 12.0 (kHz)
Input frequency
266 × L (L = 1, 2, 3, 4, 5, 6, 7, 8)
bit30 bit29 bit28 L divider parameter
000 8
001 1
010 2
011 3
100 4
101 5
110 6
(Recommended value)
111 7
MB88182
14 DS04-29138-3E
<Modulation rate setting>
Modulation r ate can be selectable fr om no modulation, ± 0.25%, ± 0.50%, ± 0.75%, ± 1.00%, ± 1.25%, ± 1.50%,
± 1.75%.
<Charge Pump setting, VCO gain setting>
Please refer and confirm the recommended value by our support tool. Contact the sales representatives for
details on the support tools.
<Output drive ability setting>
Output drive ability of clock output pin can be selected.
<Slew rate setting>
Slew rate of clock output pin can be selected.
bit43 bit42 bit41 Modulation rate setting
0 0 0 No modulation
001 ± 0.25%
010 ± 0.50%
011 ± 0.75%
100 ± 1.00%
101 ± 1.25%
110 ± 1.50%
111 ± 1.75%
bit44 Output drive ability
0Small
1 Large
bit45 Slew rate
0Low
1 High
MB88182
DS04-29138-3E 15
I2C
This de vice contains the I2C macro an d enables the sla v e transf er operation . The I2C is set to the corresponding
registers via the I2C bus.
<Bus specification>
The transfer rate should be in either standard mode or the f ast mode (The high speed mode is not supported) .
7-bit address specified (The general call and th e 10-bit address specifications are not supported).
<Bus format when writing register>
: Transmit from master device : Transmit from this device (slave)
S : START condition A : Acknowledge P : STOP condition
<Slave address>
When receiving the slave address, the address is compared with the a ddr ess in the following table. If the slave
address matches the address in the table only, I2C judges to access to this device.
<Select R/W>
“0” : Write to sla ve device
“1” : Read from slave device
first S6 S0 R/W C7 C0 D7 D0 Last
SSlave address
(7 bit) 0ACommand
(8 bit) ARegister setting
(8 bit) AA
P
Slave address (7-bit)
S6 S5 S4 S3 S2 S1 S0 Part number
1001111 MB881821APVA1/MB881822APVA1
1011111 MB881821BPVA1/MB881822BPVA1
Register setting
MB88182
16 DS04-29138-3E
<Command>
Set for the CLK2, CLK3 and CLK4 sett ing registers with either individual or successive settings. Settings other
than those in the following table are prohibited.
<Register setting for writing data>
Transfer data from the upper address. When writing successively to the se tting registers of multiple clocks, the
data will be written from the setting registers CLK1, CLK2, CLK3 and to CLK4 in order.
<Bus format for reading register>
: Transmit from master de vice : Transmit from this device (slave)
S : START condition A : Acknowledge P : STOP condition
When reading data, the data will be output from the upper address of the CLK1 setting register, then CLK2
setting register, CLK3 setting register, CLK4 setting register, in order. The data will be output 22 bytes in total.
Note: When all output s in this de vice are po we red do wn, the I2C f unction also st ops. Theref o re, se tting b y the I2C
should be performed when the CKREF clock is being outpu t.
Command (8-bit)
C7 C6 C5 C4 C3 C2 C1 C0 Transfer
bytes
00000001 4 Set to CLK1 setting register
00000010 6 Set to CLK2 setting register
00000100 6 Set to CLK3 setting register
00001000 6 Set to CLK4 setting register
00001111 22 Successive set to all registers
0000Other than “0000” or
those abo ve 10 to 18 Successive set to the register
corresponding to the bit which is set “1”.
first S6 S0 R/W D7 D0 D7 D0 Last
SSlave address
(7 bit) 1A
CLK1 setting register
bit31-24 output ACLK1 setting register
bit23-16 output Aoutput register
values A P
MB88182
DS04-29138-3E 17
ABSOLUTE MAXIMUM RATINGS
*1 : The parameter is based on VSS = 0.0 V.
*2 : Part number: MB881821A/MB881821B
*3 : Part number: MB881822A/MB881822B
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Parameter Symbol Pin Rating Unit
Min Max
Power supply voltage*1
VDD VDD 0.5 + 2.5 V
VDDE VDDE 0.5 + 4.0 V
VDP VDP 0.5 + 4.0 V
Input voltage*1VI
CKIN VSS 0.5 VDD + 0.5 V
XPDREF,
XPD1, XPD2,
XPD3, XPD4,
SCL, SDA
VSS 0.5 VDDE + 0.5 V
Output voltage*1VO
CLK1 VSS 0.5 VDD + 0.5*2
VDDE + 0.5*3V
CLK2, SDA VSS 0.5 VDDE + 0.5 V
CLK3, CLK4,
CKREF VSS 0.5 VDP + 0.5 V
Storage temperature TST ⎯− 55 + 125 °C
Operation junction
temperature TJ⎯− 40 + 125 °C
Output current IO⎯− 13 + 13 mA
Overshoot VIOVER XPDREF,
XPD1, XPD2,
XPD3, XPD4,
SCL, SDA
VDDE + 1.0
(tOVER 50 ns) V
Undershoot VIUNDER VSS 1.0
(tUNDER 50 ns) V
V
DDE
V
SS
Overshoot / Undershoot
Input pin
tunder50 ns
VIOVERVDDE + 1.0 V
tOVER50 ns VIUNDERVSS 1.0 V
MB88182
18 DS04-29138-3E
RECOMMENDED OPERATING CONDITIONS
* : Capacity value when clock signal is input to the CKIN pin via coupling capacity.
WARNING: The recommended operating conditions are req uired in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommen ded operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sh eet. Users consider ing application outside th e listed conditio ns are advised to contact
their representatives beforehand.
Parameter Symbol Pin Condition Value Unit
Min Typ Max
Power supply voltage
VDD VDD 1.65 1.8 1.95
V
VDDE VDDE 2.5 2.6 2.7
VDP VDP 1.65 1.8 1.95
2.5 2.6 2.7
“H” level input voltage
VIH1 CKIN VDD × 0.8 VDD + 0.3
VVIH2
ENS, XPDREF,
XPD1,
XPD2,XPD3,
XPD4
VDDE × 0.8 VDDE + 0.3
VIH3 SDA, SCL VDDE × 0.7 VDDE + 0.3
“L” level input voltage
VIL1 CKIN Vss 0.3 VDD × 0.2
VVIL2 ENS, XPDREF,
XPD1, XPD2,
XPD3, XPD4 Vss 0.3 VDDE × 0.2
VIL3 SDA, SCL Vss 0.3 VDDE × 0.3
Input clock amplitude
level VIC CKIN During clock
input of
capacitive
coupling
0.45 VDD V p-p
Input coupling capa city CC *20 ⎯⎯pF
Input clock duty cycle tDCI CKIN 19.2
[MHz] 40 50 60 %
Operating temperature Ta⎯⎯ 40 + 85 °C
VDD/2
t
P
t
h
CKIN
Input clock duty cycle (tDCI = th/tp)
MB88182
DS04-29138-3E 19
ELECTRICAL CHARACTERISTICS
DC Characteristics
(Ta = 40 °C to + 85 °C, VDD = 1.8 V ± 0.15 V, VDDE = 2.6 V ± 0.1 V, VDP = 2.6 V ± 0.1 V)
(Continued)
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Power
supply
current
ICC VDD*1CKREF = 19.2 MHz,
CLK1 = 48 MHz*2,
CLK2 = 27 MHz,
CLK3 = 37 MHz,
CLK4 output stop ,
output no load,
CKIN direct input
711
mA
ICCE VDDE 0.5
ICCP VDP 0.9
ICCH VDD When all clock output
disable
250
μAICCEH VDDE 15
ICCPH VDP 15
Output
voltage
VOH1
CLK1*3,
CLK2,
CLK3,
CLK4
Driving ability small setting
“H” level output
IOH = 2 mA
VDDE 0.2
VDP 0.2 VDDE
VDP
V
VOL1 Driving ability small setting
“L” level output
IOL = 2 mA VSS 0.2
VOH2 Driving ability large setting
“H” level output
IOH = 4 mA
VDDE 0.2
VDP 0.2 VDDE
VDP
VOL2 Driving ability large setting
“L” level output
IOL = 4 mA VSS 0.2
VOH1 CKREF
“H” level output
IOL = 2 mA VDP 0.2 VDP V
VOL1 “L” leve l ou tpu t
IOL = 2 mA VSS 0.2
VOH3
CLK1*2
Driving ability small setting
“H” level output
IOH = 2 mA VDD 0.2 VDD
V
VOL3 Driving ability small setting
“L” level output
IOL = 2 mA VSS 0.2
VOH4 Driving ability large setting
“H” level output
IOH = 4 mA VDD 0.2 VDD
VOL4 Driving ability large setting
“L” level output
IOL = 4 mA VSS 0.2
MB88182
20 DS04-29138-3E
(Continued) (Ta = 40 °C to + 85 °C, VDD = 1.8 V ± 0.15 V, VDDE = 2.6 V ± 0.1 V, VDP = 2.6 V ± 0.1 V)
*1 : Excluding power supply current in the CLK1 output
*2 : Part number: MB881821APVA1/MB881821BPVA1
*3 : Part number: MB881822APVA1/MB881822BPVA1
*4 : The pull up resistor for each pin is cut off when the pin input is in “L” level.
(Ta = 40 °C to + 85 °C, VDP = 1.8 V ± 0.15 V)
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Output voltage VOL2 SDA “L” level output
IOL = 4 mA VSS 0.2 V
Pull-up resistance
value*4RPU XPDREF,
XPD1, XPD2,
XPD3, XPD4 VIH = VDDE × 0.8 10 20 3 0 kΩ
Input capacitance CIN
CKIN, ENS,
XPDREF,
XPD1, XPD2,
XPD3, XPD4,
SDA, SCL
Ta = + 25 °C
VDD = VDDE = VI = 0 V
f = 1 MHz ⎯⎯10 pF
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Output voltage
VOH5
CLK3,
CLK4
Driving ability small
setting
“H” level output
IOH = 1 mA
VDP 0.2 VDP
V
VOL5
Driving ability small
setting
“L” level output
IOL = 1 mA
VSS 0.2
VOH6
Driving ability large
setting
“H” level output
IOH = 2 mA
VDP 0.2 VDP
VOL6
Driving ability large
setting
“L” level output
IOL = 2 mA
VSS 0.2
VOH5 CKREF
“H” level output
IOL = 1 mA VDP 0.2 VDP V
VOL5 “L” level output
IOL = 1 mA VSS 0.2
MB88182
DS04-29138-3E 21
AC characteristics 1
(Ta = 40 °C to + 85 °C, VDD = 1.8 V ± 0.15 V, VDDE = 2.6 V ± 0.1 V, VDP = 2.6 V ± 0.1 V)
(Continued)
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Input frequency fIN CKIN 10 19.2 30 MHz
Output
frequency fOUT
CKREF Load capacitance
15 pF or less 10 19.2 30
MHz
CLK1*1Load capacitance
15 pF or less 8100
CLK1*2,
CLK2,
CLK3,
CLK4
Load capacitance
15 pF or less 890
Load capacitance
10 pF or less 8100
Output slewing
rate SR CLK1*1
Slewing rate low,
Driving ability small setting
15 pF load capacitance
8 MHz to 70 MHz
0.32 ⎯⎯
V/ns
Slewing rate high,
Driving ability small setting
15 pF load capacitance
8 MHz to 70 MHz
0.33 ⎯⎯
Slewing rate low,
Driving ability large setting
15 pF load capacitance
8 MHz to 80 MHz
0.37 ⎯⎯
Slewing rate high,
Driving ability large setting
15 pF load capacitance
8 MHz to 100 MHz
0.43 ⎯⎯
MB88182
22 DS04-29138-3E
(Ta = 40 °C to + 85 °C, VDD = 1.8 V ± 0.15 V, VDDE = 2.6 V ± 0.1 V, VDP = 2.6 V ± 0.1 V)
(Continued)
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Output
slewing rate SR
CLK1*2,
CLK2,
CLK3,
CLK4
Slewing rate low,
Driving ability small setting
15 pF load capacitance
8 MHz to 50 MHz
0.31 ⎯⎯
V/ns
Slewing rate high,
Driving ability small setting
15 pF load capacitance
8 MHz to 60 MHz
0.33 ⎯⎯
Slewing rate low,
Driving ability large setting
15 pF load capacitance
8 MHz to 60 MHz
0.46 ⎯⎯
Slewing rate high,
Driving ability large setting
15 pF load capacitance
8 MHz to 90 MHz
0.50 ⎯⎯
Slewing rate high,
Driving ability large setting
10 pF load capacitance
90 MHz to 100 MHz
0.63 ⎯⎯
CKREF 15 pF load capacitance 0.33 ⎯⎯
Output
impedance ZO
CLK1*1Driving ability small setting 40
Ω
Driving ability large setting 28
CLK1*2Driving ability small setting 60
Driving ability large setting 30
CLK2,
CLK3,
CLK4
Driving ability small setting 60
Driving ability large setting 30
CKREF ⎯⎯60
MB88182
DS04-29138-3E 23
(Continued) (Ta = 40 °C to + 85 °C, VDD = 1.8 V ± 0.15 V, VDDE = 2.6 V ± 0.1 V, VDP = 2.6 V ± 0.1 V)
*1: Part number: MB881821APVA1/MB881821BPVA1
*2: Part number: MB881822APVA1/MB881822BPVA1
*3 : When K divider parameter = 1 and output frequency is above 50 MHz.
*4 : When K divider parameter 1, or K divider parameter = 1 and output frequency is 50 MHz or less.
*5 : Duty cycle of the CKREF output depends on the tDCI, input clock duty cycle.
*6 : The wait time f or cloc k stabilization is needed after turning the power on or when changing the setting of ENS/
power down pins. The lock-up time varies depending on the setting value to the respective register. Please
confirm the recommended value with the Fujitsu Microelectronics support tool. Contact the sales representa-
tives for details on the supp ort tools.
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Output clock
duty cycle tDCC
CLK1*1VDD / 2*340 60
%
VDD / 2*445 55
CLK1*2VDDE / 2*340 60
VDDE / 2*445 55
CLK2,
CLK3,
CLK4
VDDE / 2, VDP / 2*340 60
VDDE / 2, VDP / 2*445 55
CKREF VDP / 2tDCI 5*5 tDCI + 5*5
Modulation
frequency FMOD CLK2,
CLK3,
CLK4 fin/ (224 × L)
( 224 × L ) fin/ (266 × L)
( 266 × L ) fin/ (308 × L)
( 308 × L ) kHz
(clks)
Lock-up time*6tLK
CLK1 ⎯⎯0.3 ms
CLK2,
CLK3,
CLK4 ⎯⎯16 ms
Cycle-cycle
jitter tJC
CLK1,
CLK2,
CLK3,
CLK4
No load
capacitance ⎯⎯100 ps-rms
CKREF
Power down tRPD CKREF ⎯⎯tP × 2 + 2ns
CKREF
Power down
release tROE CKREF ⎯⎯tP × 2 + 2ns
MB88182
24 DS04-29138-3E
(Ta = 40 °C to + 85 °C, VDP = 1.8 V ± 0.15 V)
* : Duty cycle of the CKREF output depends on the tDCI, input clock duty cycle.
Parameter Symbol Pin Conditions Value Unit
Min Typ Max
Output
frequency fOUT CLK3,
CLK4
Load capacitance
10 pF or less 850 MHz
Load capacitance
15 pF or less 840
Output slewing
rate SR CLK3,
CLK4
Slewing rate low,
Driving ability small setting
15 pF load capacitance
8 MHz to 25 MHz
0.13 ⎯⎯
V/ns
Slewing rate high,
Driving ability small setting
15 pF load capacitance
8 MHz to 30 MHz
0.14 ⎯⎯
Slewing rate low,
Driving ability large setting
15 pF load capacitance
8 MHz to 30 MHz
0.19 ⎯⎯
Slewing rate high,
Driving ability large setting
15 pF load capacitance
8 MHz to 40 MHz
0.22 ⎯⎯
Slewing rate high,
Driving ability large setting
10 pF load capacitance
8 MHz to 50 MHz
0.29 ⎯⎯
CKREF 15 pF load capacitance 0.14 ⎯⎯
Output
impedance ZO
CLK3,
CLK4 Driving ability small setting 80
ΩDriving ability large setting 40
CKREF ⎯⎯80
Output clock
duty cycle tDCC
CLK3,
CLK4 VDP / 24555 %
CKREF VDP / 2tDCI 5* tDCI + 5*
CKREF
Power down tRPD CKREF ⎯⎯tP × 2 + 2ns
CKREF
Power down
release tROE CKREF ⎯⎯tP × 2 + 2ns
MB88182
DS04-29138-3E 25
<Definition of modulation frequency and number of input clocks per modulation>
This product contains the modulation period to realize the efficient EMI reduction.
The modulation period FMOD dep ends on the inpu t frequ ency and chan ges bet ween FMOD (Min) and FMOD (Max).
Furthermore, the typical value of the electrical characteristics is equivalent to the average value of the modulation
period FMOD.
<Output slew rate (SR) >
<Cycle-cycl e jit te r (tJC = |tn tn + 1|)>
t
F
MOD
(Min) F
MOD
(Max)
t
V
Modulation waveform
Input clock
Clock count
NMOD (Max) Clock count
NMOD (Min)
f (Output frequency)
(VDD 0.2) V*,(VDP 0.2) V*,
(VDDE 0.2) V*
0.2 V
CLK1
CLK2
CLK3
CLK4 t
r
t
f
* : The value is differ depending on the power supply pin.
CLK1 : (VDD 0.2)V or (VDDE 0.2)V (depending on models)
CLK2 : (VDDE 0.2)V
CLK3 : CLK4: (VDP 0.2)V
Note: SR = (power supply voltage 0.4) / tr, SR = (power supply voltage 0.4) / tf
t
n
t
n+1
CLK1
CLK2
CLK3
CLK4
MB88182
26 DS04-29138-3E
<Output timing with XPDREF control>
<Lock-up time>
If the power down control is perf ormed on pins XPD1, XPD2, XPD3 and XPD4, the desired clock frequency will
be obtained once the power down pin becomes at the “H” level and after the lock-up time tLK has passed at
maximum.
If the ENS pin setting changes during the normal operation, setting clocks CLK2, CLK3 and CLK4 will be output
once the ENS pin level is decided and after lock-up time tLK has passed at maximum.
Note: When the ENS pin setting is changed, the stabilization wait time is needed f or the output cloc k from CLK2,
CLK3 and CLK4 pins. During the stabilization wait time, the output frequency, output clock duty cycle,
modulation fr equency, and cycle-cycle jitter cannot be guaranteed. It is therefore advisable to perform pro-
cessing such as cancelling a reset of the device at the succeeding stage after the lock-up time.
XPDREF
CKREF
XPDREF
CKREF
VIL
VIH
tPtRPD
tROE
CLK1, CLK2,
CLK3, CLK4
CKIN
XPD1, XPD2,
XPD3, XPD4
V
IH
V
IL
tLK (lock-up time)
CLK2,
CLK3,CLK4
CKIN
ENSV
IH
V
IL
tLK
(lock-up time)
tLK
(lock-up time)
MB88182
DS04-29138-3E 27
AC characterist ics 2 (Serial t iming) (Ta = 40 °C to + 85 °C, VDD = 1.8 V ± 0.15 V, VDDE = 2. 6 V ± 0.1 V)
Parameter Symbol Pin Conditions Value Unit
Min Max
SCL clock frequency fSCL SCL 0 400 kHz
During data input
set up time tISU SDA 100 ns
During data input
hold time tIH SDA 0ns
Noise removal width tNC SDA
SCL 100 160 ns
Input hysteresis VHYS SDA
SCL 0.3 V
(Repeat) START co ndition
hold time tSTAH SDA
SCL 0.5 ⎯μs
Repeat START condition
setup time tSTASU SDA
SCL 0.5 ⎯μs
SCL clock “L” width tCL SCL 1⎯μs
SCL clock “H” width tCH SCL 0.5 ⎯μs
STOP condition setup time tSTOSU SDA
SCL 0.5 ⎯μs
Bus free time between stop
condition and start condition tBUF SDA
SCL 1⎯μs
During bus drive
set up time tOSU SDA
Bus load: under 400 pF,
Resistor value for bus
pull-up: at least 750 Ω
1⎯μs
During bus drive
hold time tOH SDA 0 0.6 μs
During bus drive
fall time tOF SDA 300 ns
MB88182
28 DS04-29138-3E
t
ISU
,
t
OSU
VDDE 0.3
SCL
VDDE 0.7
SDA
t
IH
,
t
OH
t
NC
t
NC
+
+
During data input/b us drive
Noise cancel operation
External SCL
signal
Internal SCL signal
after noise removal
The pulse in the tNC range is
removed.
(Repeat) Start operation, Stop operation
MB88182
DS04-29138-3E 29
RECOMMENDED CIRCUIT
2.6 V to 1.8 V
+
C
3
C
6
CKIN
CKREF R
5
1.8 V
R
1
CLK1
XPDREF +
C
1
C
4
SDA
R
7
R
6
SCL
+
C
2
C
5
XPD1
XPD4
XPD3
XPD2
CLK2
R
2
2.6 V
ENS
R
4
CLK4
R
3
CLK3
1
2
3
4
5
6
7
17
16
15
14
13
12
11
8
20
9
19
10
18
MB88182
C1, C2, C3 : Capacitor of 10 μF or higher
C4, C5, C6 : Capacitor of about 0.01 μF (connect a capacitor of good high frequency
property (ex. laminated cerami c capacitor) to close to this device)
R1, R2, R3, R4, R5 : Impedance matching resistor for board pattern
R6, R7 : I2C bus Pull-up resistor
MB88182
30 DS04-29138-3E
CLOCK INPUT VIA COUPLING CAPACITY
It is possib le to input clocks to the CKIN pin via the coupling capacity as shown in the f ollowing figure. The de vice
input part contains the CMOS inverter and the feedback resistor (1 MΩ). The clock input via the coupling capacity
operates near the threshold level of the CMOS inverter, therefore the current for the capacity connection clock
input increases compared to the normal input.
C
C
V
IC
R
f
(1 MΩ)
Input clock
LSI external LSI intern al
CKIN pin
Input via
coupling capacity
Clock after the coupling
capacity passes by
MB88182
DS04-29138-3E 31
ORDERING INFORMATION
Part number Package
MB881821APVA1-GE1
MB881821APVA1-G-ERE1
MB881821APVA1-G-EFE1
MB881821BPVA1-GE1
MB881821BPVA1-G-ERE1
MB881821BPVA1-G-EFE1
MB881822APVA1-GE1
MB881822APVA1-G-ERE1
MB881822APVA1-G-EFE1
MB881822BPVA1-GE1
MB881822BPVA1-G-ERE1
MB881822BPVA1-G-EFE1
20-pin plastic BCC
(LCC-20P-M06)
MB881821AWQN-G-JNE1
MB881821AWQN-G-JN-ERE1
MB881821AWQN-G-JN-EFE1
MB881821BWQN-G-JNE1
MB881821BWQN-G-JN-ERE1
MB881821BWQN-G-JN-EFE1
MB881822AWQN-G-JNE1
MB881822AWQN-G-JN-ERE1
MB881822AWQN-G-JN-EFE1
MB881822BWQN-G-JNE1
MB881822BWQN-G-JN-ERE1
MB881822BWQN-G-JN-EFE1
24-pin plastic QFN
(LCC-24P-M61)
MB88182
32 DS04-29138-3E
PACKAGE DIMENSION
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/ (Continued)
20-pin plastic BCC Lead pitch 0.50 mm
Package width ×
package length 3.50 mm × 3.50 mm
Sealing method Plastic mold
Mounting height 0. 60 mm MAX
Weight 0.01 g
20-pin plastic BCC
(LCC-20P-M06)
(LCC-20P-M06)
C
2004 FUJITSU LIMITED C20057S-c-1-1
0.50±0.10
(.020±.004)
0.50(.020)
TYP.
3.50±0.10
(.138±.004) 0.55±0.050
(.022±.0020)
0.075±0.025
(.003±.001)
(Stand off)
0.05(.002)
7
17
1.00(.004)
REF.
"B"
Details of "B" part
(.012±.002)
0.30±0.06
0.20(.008)
INDEX AREA
(.138±.004)
3.50±0.10
(.012±.002)
0.30±0.06
(.016±.002)
0.40±0.06
Details of "A" part
3.00(.118)REF.
0.50(.020)
TYP
11
0.14(.006)
MIN
17 11
17
Mount height
1
"A"
1PIN INDEX
1.55(.061)
0.95
(.037)
2.90(.114)
TYP.
TYP.
2.90(.114)
0.20(.008)
0.40±0.06
(.016±.002)
1PIN INDEX
©2004-2008 FUJITSU MICROELECTRONICS LIMITED C20057S-c-1-2 Dimensions in mm (inches).
Note: The values in parentheses are reference values.
MB88182
DS04-29138-3E 33
(Continued)
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
24-pin plastic QFN Lead pitch 0.40 mm
Package width ×
package length 2.50 mm × 3.50 mm
Sealing method Plastic mold
Mounting height 0.80 mm MAX
Weight 0.02 g
24-pin plastic QFN
(LCC-24P-M61)
(LCC-24P-M61)
(.001 )
+0.03
0.02
.001
+.001
0.02
C
2009 FUJITSU MICROELECTRONICSLIMITED C24061S
-
c
-
1
-
1
(.138±.004)
3.50±0.10
2.50±0.10
(.098±.004)
2.60±0.10
0.40(.016)
0.15±0.05
(.030±.002)
0.75±0.05
(0.20(.008))
(.102±.004)
1.60±0.10
(.063±.004)
INDEX AREA
(.009±.002)
0.24±0.05
1PIN CORNER
(C0.50(C.020))
TYP
(.006±.002)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
MB88182
34 DS04-29138-3E
MEMO
MB88182
DS04-29138-3E 35
MEMO
MB88182
FUJITSU MICROELECTRONICS LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yok ohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-8508, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fml/en/
F or further information please contact:
Nort h and South America
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
Europe
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
Korea
FUJITSU MICROELECTRONICS K OREA LTD.
206 K osmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-36 88 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The informatio n, such as desc riptions of function and application circuit examples, in this document a re present ed solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of functio n and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectu al proper ty right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and househo ld use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to
the public, and could lead directly to death, personal injury, severe p hysical damage or other loss (i.e., nuclear reaction control in nuclear
facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon
system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial sate llite).
Please note that FUJITSU MICROELECTR ONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redund ancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department