APTM120UM70F-AlN
APTM120UM70F
–
AlN Rev 0 July, 2004
APT website
–
http:/
/
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6
D
GDK
S
SK
D
S
DK
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
S
ymbol Parameter Ma
x
ratings Unit
VDSS Drain - Source Breakdown Voltage 1200 V
Tc = 25°C 171
ID Continuous Drain Current Tc = 80°C 126
IDM Pulsed Drain current 684
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 70 mΩ
PD Maximum Power Dissipation Tc = 25°C 5000 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3200 mJ
VDSS = 1200V
RDSon = 70mΩ max @ Tj = 25°C
ID = 171A @ Tc = 25°C
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstandi ng performance at hi gh frequenc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Single switch
MOSFET Power Module
APTM120UM70F-AlN
APTM120UM70F
–
AlN Rev 0 July, 2004
APT website
–
http:/
/
www.advancedpower.com 2
–
6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1.5mA 1200 V
VGS = 0V, VDS = 1200V Tj = 25°C 1.5
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 1000V Tj = 125°C 6
mA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 85.5A 70
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 30mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 43.5
Coss Output Capacitance 6.6
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 1.2
nF
Qg Total gate Charge 1650
Qgs Gate – Source Charge 192
Qgd Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 171A 1074
nC
Td(on) Tur n-o n Delay Ti me 20
Tr Rise Time 17
Td(off) Turn-off Delay Time 245
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 171A
RG =0.8Ω 62
ns
Eon Turn-on Switchi ng Energy X 7.6
Eoff Turn-off Switching Energy Y
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 171A, RG = 0.8Ω 6.9
mJ
Eon Turn-on Switchi ng Energy X 13.8
Eoff Turn-off Switching Energy Y
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 171A, RG = 0.8Ω 8.5
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 171 IS Continuous Source current
(Body diode)
Tc = 80°C 126 A
VSD Diode Forward Voltage VGS = 0V, IS = - 171A 1.3 V
dv/dt Peak Diode Recovery Z 18 V/ns
Tj = 25°C 375
trr Reverse Recovery Time
IS = - 171A
VR = 600V
diS/dt = 600A/µs Tj = 125°C 860 ns
Tj = 25°C 12
Qrr Reverse Recovery Charge
IS = - 171A
VR = 600V
diS/dt = 600A/µs Tj = 125°C 54
µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 171A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APTM120UM70F-AlN
APTM120UM70F
–
AlN Rev 0 July, 2004
APT website
–
http:/
/
www.advancedpower.com 3
–
6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Transistor 0.025 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
Package outline
APTM120UM70F-AlN
APTM120UM70F
–
AlN Rev 0 July, 2004
APT website
–
http:/
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4.5V
5V
5.5V
6V
7V
0
60
120
180
240
300
360
420
0 5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15, 10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
420
480
01234567
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0 60 120 180 240 300 360
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 85.5A
0
45
90
135
180
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM120UM70F-AlN
APTM120UM70F
–
AlN Rev 0 July, 2004
APT website
–
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/
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0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID=85.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDS on
Single pulse
TJ=150°C
1200
Ciss
Crss
Coss
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
14
0 420 840 1260 1680 2100
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=171A
TJ=25°C
APTM120UM70F-AlN
APTM120UM70F
–
AlN Rev 0 July, 2004
APT website
–
http:/
/
www.advancedpower.com 6
–
6
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
60 90 120 150 180 210 240 270
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
60 90 120 150 180 210 240 270
ID, Drain Current (A)
tr and tf (ns)
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
20
24
60 90 120 150 180 210 240 270
ID, Drain Current (A)
Switching Energy (mJ)
VDS =800V
RG=0.8Ω
TJ=125°C
L=100µH
Eon
Eoff
6
12
18
24
30
36
0123456
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=800V
ID=171A
TJ=125°C
L=100µH
Hard
switching ZCS
ZVS
0
25
50
75
100
125
150
175
40 60 80 100 120 140 160
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
APT re s e rves the rig ht to cha nge , wit ho ut notice, the s pe cificatio ns and info rmatio n co nta i ne d here in
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