Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 9.0
IC @ TC = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current 18 A
ILM Clamped Inductive Load Current 18
IF @ TC = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
IRG4RC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Short Circuit Rated
UltraFast IGBT
2/20/04
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
Benefits
W
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
D-PAK
TO-252AA
Absolute Maximum Ratings
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
Thermal Resistance
°C/W
Parameter Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– 3.3
RθJC Junction-to-Case - Diode ––– 7.0
RθJA Junction-to-Ambient (PCB mount)* ––– 50
Wt Weight 0.3 (0.01) ––– g (oz)
PD - 95035
www.irf.com 1
• Lead-Free
IRG4RC10KDPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 19 29 IC = 5.0A
Qge Gate - Emitter Charge (turn-on) — 2.9 4.3 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 9.8 15 VGE = 15V
td(on) Turn-On Delay Time — 49 —
trRise Time — 28 — TJ = 25°C
td(off) Turn-Off Delay Time — 97 150 IC = 5.0A, VCC = 480V
tfFall Time — 140 210 VGE = 15V, RG = 100Ω
Eon Turn-On Switching Loss — 0.25 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.14 — mJ and diode reverse recovery
Ets Total Switching Loss — 0.39 0.48 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 100Ω , VCPK < 500V
td(on) Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 10,11,14
trRise Time — 32 — IC = 5.0A, VCC = 480V
td(off) Turn-Off Delay Time — 100 — VGE = 15V, RG = 100Ω
tfFall Time — 310 — Energy losses include "tail"
Ets Total Switching Loss — 0.56 — mJ and diode reverse recovery
LEInternal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 220 — VGE = 0V
Coes Output Capacitance — 29 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 7.5 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.
—3857 T
J = 125°C 14 IF = 4.0A
Irr Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.
— 70 105 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.
During tb— 235 — TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 0.58 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.39 2.62 IC = 5.0A VGE = 15V
— 3.25 — V IC = 9.0A See Fig. 2, 5
— 2.63 — IC = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 1.2 1.8 — S VCE = 50V, IC = 5.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13
— 1.4 1.7 IC = 4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
IRG4RC10KDPbF
www.irf.com 3
0.1 1 10 100
0.0
0.4
0.8
1.2
1.6
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specified
sink
J
Power Dissipation = W
60% of rated
voltage
I
Ideal diodes
Square wave:
1.4
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1.0 2.0 3.0 4.0 5.0 6.0 7.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
J°
T = 150 C
J°
1
10
100
510 15 20
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
J°
T = 150 C
J°
55
IRG4RC10KDPbF
4www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A10
C
I = A5
C
I = A2.5
C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
2
4
6
8
10
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
IRG4RC10KDPbF
www.irf.com 5
-60 -40 -20 020 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
10
C
I = A
5
C
I = A
2.5
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
50Ω
020 40 60 80 100
0.30
0.32
0.34
0.36
0.38
0.40
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 5.0A
CC
GE
J
C
°
( Ω )
1 10 100
0
100
200
300
400
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
0 4 8 12 16 20
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 5.0A
CC
C
IRG4RC10KDPbF
6www.irf.com
0 2 4 6 8 10
0.0
0.5
1.0
1.5
2.0
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
50Ω
0.1
1
10
100
0.0 1.0 2.0 3.0 4.0 5.0 6.0
FM
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
IRG4RC10KDPbF
www.irf.com 7
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
di (rec) M/dt- (A /µs)
Qrr- (nC)
Irr- ( A)
trr- (nC)
20
25
30
35
40
45
50
100 1000
f
di /dt - (A/µs)
I = 8.0A
I = 4.0A
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
2
4
6
8
10
12
14
100 1000
f
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
di /dt - (A/µs)
F
F
0
40
80
120
160
200
100 1000
f
di /dt - (A/µs)
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
100
1000
100 1000
f
di /dt - (A/µs)
A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
IRG4RC10KDPbF
8www.irf.com
Same type
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec =
t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
t=5µs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
ts on off
E = (E +E )
V
V
ge
IRG4RC10KDPbF
www.irf.com 9
Vg GATE SIGNAL
DEVICE UNDER TES
T
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
RL=480V
4 X IC @25°C
0 - 480V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4RC10KDPbF
10 www.irf.com
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010 ) M A M B
4.57 (.180)
2.28 (.090)
2X 1.14 (.045)
0.76 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
D-Pak (TO-252AA) Part Marking Information (Lead-Free)
INTERNATIONAL
LOGO
RECTIFIER
3412
IRFR120
916A
LOT CODE
ASSEMBLY
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFR120
YEAR 9 = 1999
DAT E CODE
LINE A
WEEK 16
IN THE ASSEMBLY LINE "A"
AS S EMBLED ON WW 16, 1999
LOT CODE 1234
PART NUMBER
Note: "P" in as sembly line
pos iti on indi cates "L ead-F ree"
OR
P916A
IRF R 120
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO
12
PART NUMBER
WEEK 16
A = ASSEMBLY SITE CODE
DAT E CODE
YEAR 9 = 1999
34
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
IRG4RC10KDPbF
www.irf.com 11
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
