Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
1SS400
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High speed switching
Features
1)Ultra small mold type. (UMD2)
2)High reliability
Construction
Silicon epitaxial planar Structure
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge mA
Tj C
Tstg C
Electrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 1.2 V IF=100mA
Reverse current IR- - 0.1 μAVR=80V
Ct - - 3 pF VR=0.5V , f=1MHz
trr - - 4 ns VR=6V , IF=10mA , RL=100Ω
Reverse recovery time
Taping dimensions (Unit : mm)
Parameter
Capacitance between terminals
Junction temperature 125
Storage temperature 55 to 125
Average rectified forward current 100
Surge current(t=1s) 500
Reverse voltage (DC) 80
Forward voltage(repetitive peak) 225
Parameter Limits
Reverse voltage (repetitive) 90
EMD2
0.8
1.7
0.6
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
Empty pocket
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
1/2 2011.06 - Rev.D
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA I
F
=10mA
300us
time
Mounted on epoxy board
0.1
1
10
100
0.1 1 10 100
t
Ifsm
0.1
1
10
100
1 10 100
8.3m
Ifsm
1cyc
8.3m
0
1
2
3
4
5
0
5
10
15
20
8.3ms
Ifsm 1cyc
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
20
40
60
80
100
900
910
920
930
940
950
0.1
1
10
0 5 10 15
0.1
1
10
100
1000
10000
100000
0 20 40 60 80 100 120
Ta=125℃
Ta=25℃
Ta=25℃
Ta=75℃
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Ta=25℃
Ta=125℃
Ta=75℃
Ta=25℃
FORWARD VOLTAGE : V
F
(V)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE : V
F
(mV)
REVERSE CURRENT : I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
f=1MHz
AVE:930.3mV
Ta=25℃
I
F
=100mA
n=30pcs
Ta=25℃
V
R
=80V
n=30pcs
AVE:12.47nA
AVE:0.698pF
Ta=25℃
V
R
=0.5V
f=1MHz
n=10pcs
AVE:4.05A AVE:1.20ns
Ta=25℃
V
R
=6V
I
F
=10mA
RL=100Ω
Irr=0.1*I
R
n=10pcs
AVE:6.43kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
AVE:1.58kV
2/2 2011.06 - Rev.D
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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