IRF7484 - International Rectifier

HEXFET® Power MOSFET

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional

features of this HEXFET power MOSFET are a 150°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These benefits

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

Absolute Maximum Ratings

Description

11/27/06

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lAdvanced Process Technology

lUltra Low On-Resistance

lFast Switching

lRepetitive Avalanche Allowed up to Tjmax

Benefits

Typical Applications

lRelay replacement

lAnti-lock Braking System

lAir Bag

PD - 94446C

IRF7484

VDSS RDS(on) max (mW) ID

40V 10@VGS = 7.0V 14A

SO-8

Top View

Symbol Parameter Typ. Max. Units

RθJL Junction-to-Drain Lead ––– 20

RθJA Junction-to-Ambient ––– 50 °C/W

Thermal Resistance

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A

IDM Pulsed Drain Current 110

PD @TA = 25°C Power Dissipation2.5 W

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 8.0 V

EAS Single Pulse Avalanche Energy230 mJ

IAR Avalanche CurrentSee Fig.16c, 16d, 19, 20 A

EAR Repetitive Avalanche EnergymJ

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.3A, VGS = 0V 

trr Reverse Recovery Time ––– 59 89 ns TJ = 25°C, IF = 2.3A

Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs 

Source-Drain Ratings and Characteristics

110



 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 Surface mounted on 1 in square Cu board.

 Starting TJ = 25°C, L = 2.3mH, RG = 25Ω,

IAS = 14A. (See Figure 12).

Notes:

ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C.

 Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive

avalanche performance.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.040 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 10 mΩVGS = 7.0V, ID = 14A 

VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 40 ––– ––– S VDS = 10V, ID = 14A

––– ––– 20 VDS = 40V, VGS = 0V

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 8.0V

Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -8.0V

QgTotal Gate Charge ––– 69 100 ID = 14A

Qgs Gate-to-Source Charge ––– 9.0 ––– nC VDS = 32V

Qgd Gate-to-Drain ("Miller") Charge ––– 16 ––– VGS = 7.0V

td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 20V 

trRise Time ––– 5.0 ––– ID = 1.0A

td(off) Turn-Off Delay Time ––– 180 ––– RG = 6.2Ω

tfFall Time ––– 58 ––– VGS = 7.0V

Ciss Input Capacitance ––– 3520 ––– VGS = 0V

Coss Output Capacitance ––– 660 ––– pF VDS = 25V

Crss Reverse Transfer Capacitance ––– 76 ––– ƒ = 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

IDSS Drain-to-Source Leakage Current

2.3

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Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

14A

Fig 4. Normalized On-Resistance

Vs. Temperature

1.0 2.0 3.0 4.0

VGS, Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 150°C

VDS = 15V

20µs PULSE WIDTH

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

1000

10000

100000

ID, Drain-to-Source Current (A)

1.8V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 7.5V

7.0V

4.5V

3.0V

2.5V

2.3V

2.0V

BOTTOM 1.8V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

10000

ID, Drain-to-Source Current (A)

1.8V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP 7.5V

7.0V

4.5V

3.0V

2.5V

2.3V

2.0V

BOTTOM 1.8V

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Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

010 20 30 40 50 60 70 80

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D14A

V = 8V

V = 20V

V = 32V

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS

= 0V, f = 1 MHZ

Ciss

= C

gs + C

gd, C

ds SHORTED

Crss

= C

Coss

= C

+ C

0 1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-to-Drain Voltage (V)

0.10

100

1000

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 150°C

VGS = 0V

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Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

T , Case Temperature ( C)

I , Drain Current (A)

0.1

100

0.0001 0.001 0.01 0.1 1 10 100 10

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

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Fig 13. Typical On-Resistance Vs. Drain

Current

Fig 12. Typical On-Resistance Vs. Gate

Voltage

Fig 14. Typical Threshold Voltage Vs.

Junction Temperature

Fig 15. Typical Power Vs. Time

0 20 40 60 80 100 120

ID , Drain Current (A)

8.60

8.70

8.80

8.90

9.00

9.10

9.20

9.30

9.40

RDS (on) , Drain-to-Source On Resistance (mΩ)

VGS = 7.0V

-75 -50 -25 025 50 75 100 125 150 175 200

TJ , Temperature ( °C )

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

VGS(th) Gate threshold Voltage (V)

ID = 250µA

1.00 10.00 100.00 1000.00

Time (sec)

Power (W)

2.0 3.0 4.0 5.0 6.0 7.0 8.0

VGS, Gate -to -Source Voltage (V)

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

RDS(on), Drain-to -Source On Resistance (mΩ)

ID = 14A

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25 50 75 100 125 150

104

208

312

416

520

Starting Tj, Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

6.3A

11A

14A

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 17. Gate Charge Test Circuit Fig 18. Basic Gate Charge Waveform

Fig 16a. Maximum Avalanche Energy

Vs. Drain Current

Fig 16d. Unclamped Inductive Waveforms

Fig 16c. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

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Fig 19. Typical Avalanche Current Vs.Pulsewidth

Fig 20. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 19, 20:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 16c, 16d.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 19, 20).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

tav (sec)

0.01

0.1

100

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.01

125 130 135 140 145 150

Starting TJ , Junction Temperature (°C)

100

120

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 1% Duty Cycle

ID = 1.0A

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SO-8 Package Details

SO-8 Part Marking

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MIL L IME T E R SINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

e1 A

8X b

0.10 [.004]

4312

F OOT P R I NT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.

NOT E S :

1. DIME NS IONING & T OLERANCING PER AS ME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ].

5 DIME NS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .

6 DIME NS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .

MOLD PROT RUSIONS NOT TO EXCEED 0.25 [.010].

7 DIME NS ION IS T HE LE NGT H OF LEAD F OR S OLDERING T O

A S U B S T R AT E .

MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAS T DIGIT OF T HE YEAR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: T HIS IS AN IRF 7101 (MOS FET )

P = DE S I GNAT E S L E AD- F R E E

PRODUCT (OPTIONAL)

A = ASSEMBLY SITE CODE

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 11/06

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

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